VND5T100AJ-E [STMICROELECTRONICS]

Double channel high-side driver with analog current sense for 24 V automotive applications; 模拟电流检测的双通道高侧驱动器,用于24 V汽车应用
VND5T100AJ-E
型号: VND5T100AJ-E
厂家: ST    ST
描述:

Double channel high-side driver with analog current sense for 24 V automotive applications
模拟电流检测的双通道高侧驱动器,用于24 V汽车应用

驱动器
文件: 总32页 (文件大小:533K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VND5T100AJ-E  
Double channel high-side driver with analog current sense  
for 24 V automotive applications  
Features  
Max transient supply voltage  
Operating voltage range  
VCC  
58 V  
VCC 8 to 36 V  
Typ on-state resistance (per ch.)  
Current limitation (typ)  
RON 100 mΩ  
PowerSSO-12  
ILIM  
IS  
22 A  
2 µA(1)  
Off-state supply current  
Application  
1. Typical value with all loads connected.  
All types of resistive, inductive and capacitive  
loads  
General  
– Very low standby current  
– 3.0 V CMOS compatible input  
– Optimized electromagnetic emission  
– Very low electromagnetic susceptibility  
– Compliance with European directive  
2002/95/EC  
– Fault reset standby pin (FR_Stby)  
Description  
The VND5T100AJ-E is a monolithic device made  
using STMicroelectronics™ VIPower™  
technology, intended for driving resistive or  
inductive loads with one side connected to  
ground. Active V pin voltage clamp protects the  
CC  
Diagnostic functions  
device against low energy spikes.  
– Proportional load current sense  
This device integrates an analog current sense  
which delivers a current proportional to the load  
current.  
– High current sense precision for wide range  
currents  
– Off-state open-load detection  
Fault conditions such as overload,  
– Output short to V detection  
CC  
overtemperature or short to V are reported via  
CC  
– Overload and short to ground latch-off  
– Thermal shutdown latch-off  
– Very low current sense leakage  
the current sense pin.  
Output current limitation protects the device in  
overload condition. The device latches off in case  
of overload or thermal shutdown.  
Protection  
– Undervoltage shutdown  
– Overvoltage clamp  
– Load current limitation  
The device is reset by a low level pass on the fault  
reset standby pin.  
A permanent low level on the inputs and fault  
reset standby pin disables all outputs and sets the  
device in standby mode.  
– Self limiting of fast thermal transients  
– Protection against loss of ground and loss  
of V  
CC  
– Thermal shutdown  
– Electrostatic discharge protection  
March 2011  
Doc ID 018513 Rev 1  
1/32  
www.st.com  
1
Contents  
VND5T100AJ-E  
Contents  
1
2
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
2.1  
2.2  
2.3  
2.4  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
3
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
3.1  
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 21  
3.1.1  
3.1.2  
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 21  
Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 22  
3.2  
3.3  
3.4  
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
Maximum demagnetization energy (VCC = 24 V) . . . . . . . . . . . . . . . . . . . 23  
4
5
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
4.1  
PowerSSO-12 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
5.1  
5.2  
5.3  
ECOPACK® . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29  
6
7
Order code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
2/32  
Doc ID 018513 Rev 1  
VND5T100AJ-E  
List of tables  
List of tables  
Table 1.  
Table 2.  
Table 3.  
Table 4.  
Table 5.  
Table 6.  
Table 7.  
Table 8.  
Table 9.  
Table 10.  
Table 11.  
Table 12.  
Table 13.  
Table 14.  
Table 15.  
Table 16.  
Table 17.  
Table 18.  
Pin function. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6  
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Current sense (8 V < V < 36 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
CC  
Open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
Electrical transient requirements (part 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Electrical transient requirements (part 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Electrical transient requirements (part 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
PowerSSO-12 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Doc ID 018513 Rev 1  
3/32  
List of figures  
VND5T100AJ-E  
List of figures  
Figure 1.  
Figure 2.  
Figure 3.  
Figure 4.  
Figure 5.  
Figure 6.  
Figure 7.  
Figure 8.  
Figure 9.  
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
T
T
definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
standby  
reset  
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Open-load off-state delay timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Output stuck to V detection delay time at FRSTBY activation . . . . . . . . . . . . . . . . . . . . 15  
CC  
Figure 10. Delay response time between rising edge of output current and rising edge of current  
sense . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Figure 11. Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 12. Device behavior in overload condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16  
Figure 13. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 14. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 15. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 16. Input high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 17. Input low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 18. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
Figure 19. On-state resistance vs T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
case  
Figure 20. On-state resistance vs V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
CC  
Figure 21.  
I
vs T  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
LIMH  
case  
Figure 22. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Figure 23. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Figure 24. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Figure 25. Maximum turn-off current versus inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23  
Figure 26. PowerSSO-12 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Figure 27. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 24  
Figure 28. PowerSSO-12 thermal impedance junction ambient single pulse (one channel ON). . . . . 25  
Figure 29. Thermal fitting model of a double channel HSD in PowerSSO-12 . . . . . . . . . . . . . . . . . . . 25  
Figure 30. PowerSSO-12 package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Figure 31. PowerSSO-12 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29  
Figure 32. PowerSSO-12 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29  
4/32  
Doc ID 018513 Rev 1  
VND5T100AJ-E  
Block diagram and pin description  
1
Block diagram and pin description  
Figure 1.  
Block diagram  
9&&  
6LJQDOꢀ&ODPS  
&RQWUROꢀꢁꢀ'LDJQRVWLFꢀꢂ  
8QGHUYROWDJH  
&RQWUROꢀꢁꢀ'LDJQRVWLFꢀꢃ  
3RZHUꢀ  
&ODPS  
,1ꢃ  
,1ꢂ  
'5,9(5  
&+ꢃꢀꢀ  
921  
/LPLWDWLRQ  
2YHUꢀ  
7HPSHUDWXUH  
&XUUHQWꢀ  
/LPLWDWLRQ  
2))ꢈVWDWHꢀ  
2SHQꢈORDG  
)5B6WE\  
96(16(+  
&6ꢃ  
&6ꢂ  
&XUUHQWꢀ  
6HQVH  
&+ꢂꢀꢀ  
287ꢂ  
287ꢃ  
29(5/2$'ꢀ3527(&7,21ꢀ  
ꢄ$&7,9(ꢀ32:(5ꢀ/,0,7$7,21ꢅ  
/2*,&  
*1'  
*$3*&)7ꢆꢆꢆꢃꢃꢇ  
Table 1.  
Name  
Pin function  
Function  
VCC  
OUTn  
GND  
Battery connection  
Power output  
Ground connection  
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output  
switch state  
INn  
CSn  
Analog current sense pin, delivers a current proportional to the load current  
In case of latch-off for OT/overcurrent condition, a low pulse on the FR_Stby pin is  
needed to reset the channel.  
FR_Stby  
The device enters in standby mode if all inputs and the FR_Stby pin are low.  
Doc ID 018513 Rev 1  
5/32  
 
 
 
Block diagram and pin description  
VND5T100AJ-E  
Figure 2.  
Configuration diagram (top view)  
7$%ꢀ ꢀ9&&  
9&&  
ꢃꢂ  
ꢃꢃ  
ꢃꢆ  
&6ꢃ  
,1ꢃ  
287ꢃ  
287ꢃ  
287ꢂ  
287ꢂ  
9&&  
)5B67%<  
*1'  
,1ꢂ  
&6ꢂ  
3RZHU662ꢈꢃꢂ  
*$3*&)7ꢆꢆꢆꢃꢆꢉ  
Table 2.  
Suggested connections for unused and not connected pins  
Connection / pin Current sense  
N.C.  
Output  
Input  
FR_Stby  
Floating  
Not allowed  
X
X
X
X
Through10 KΩ  
Through  
10 KΩ resistor 10 KΩ resistor  
Through  
To ground  
X
Not allowed  
resistor  
6/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Electrical specifications  
2
Electrical specifications  
Figure 3.  
Current and voltage conventions  
,
6
9&&  
9&&  
9)Q  
,
287Q  
,
)5B6WE\  
287Q  
&6Qꢀꢀ  
)5B6WE\  
,1Q  
9287Q  
9)5B6WE\  
,
6(16(Q  
,
,1Q  
96(16(Q  
,1Q  
*1'  
,
*1'  
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*$3*&)7ꢆꢆꢆꢃꢃꢆ  
2.1  
Absolute maximum ratings  
Stressing the device above the ratings listed in Table 3 may cause permanent damage to  
the device. These are stress ratings only and operation of the device at these or any other  
conditions above those indicated in the operating sections of this specification is not implied.  
Exposure to the conditions reported in this section for extended periods may affect device  
reliability. Refer also to the STMicroelectronics™ SURE program and other relevant quality  
documents.  
Table 3.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
V
VCC  
DC supply voltage  
58  
0.3  
-VCC  
Reverse DC supply voltage  
V
-IGND DC reverse ground pin current  
200  
mA  
A
IOUT  
-IOUT  
IIN  
DC output current  
Internally limited  
20  
Reverse DC output current  
DC input current  
A
-1 to 10  
-1 to 1.5  
200  
mA  
mA  
mA  
IFR_Stby Fault reset standby DC input current  
-ICSENSE DC reverse CS pin current  
VCC - 58 to  
+VCC  
VCSENSE Current sense maximum voltage  
V
Doc ID 018513 Rev 1  
7/32  
 
 
 
 
Electrical specifications  
VND5T100AJ-E  
Table 3.  
Symbol  
Absolute maximum ratings (continued)  
Parameter  
Value  
Unit  
Maximum switching energy  
(L = 1.9 mH; Vbat = 32 V; Tjstart = 150 °C; IOUT = IlimL (Typ))  
EMAX  
70  
mJ  
Electrostatic discharge  
(Human Body Model: R = 1.5 KΩ; C = 100 pF)  
– INPUT  
4000  
2000  
4000  
5000  
5000  
V
V
V
V
V
VESD  
– CURRENT SENSE  
– FR_STBY  
– OUTPUT  
– VCC  
VESD  
Tj  
Charge device model (CDM-AEC-Q100-011)  
Junction operating temperature  
Storage temperature  
750  
V
-40 to 150  
-55 to 150  
°C  
°C  
Tstg  
Maximum stray inductance in short circuit  
LSmax  
40  
µH  
RL = 300 mΩ, Vbat = 32 V, Tjstart = 150 °C, IOUT = IlimHmax  
2.2  
Thermal data  
Table 4.  
Symbol  
Thermal data  
Parameter  
Maximum value  
Unit  
Rthj-case Thermal resistance junction-case (with one channel ON)  
Rthj-amb Thermal resistance junction-ambient  
3
°C/W  
°C/W  
See Figure 27  
8/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Electrical specifications  
2.3  
Electrical characteristics  
8 V < V < 36 V; -40 °C < T < 150 °C, unless otherwise specified.  
CC  
j
.
Table 5.  
Symbol  
Power section  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
VCC  
Operating supply voltage  
8
24  
36  
5
V
V
VUSD Undervoltage shutdown  
3.5  
Undervoltage shutdown  
hysteresis  
VUSDhyst  
0.5  
V
IOUT = 1.5 A; Tj = 25 °C  
IOUT = 1.5 A; Tj = 150 °C  
IS = 20 mA  
100  
RON  
On-state resistance(1)  
mΩ  
200  
70  
Vclamp Clamp voltage  
58  
64  
V
Off-state: VCC = 24 V; Tj = 25 °C;  
VIN = VOUT = VSENSE = 0 V  
2(2)  
5(2)  
µA  
IS  
Supply current  
On-state: VCC = 24 V; VIN = 5 V;  
IOUT = 0 A  
4.2  
6
mA  
VIN = VOUT = 0 V; VCC = 24 V;  
Tj = 25 °C  
0
0
0.01  
3
IL(off)  
Off-state output current  
µA  
V
VIN = VOUT = 0 V; VCC = 24 V;  
Tj = 125 °C  
5
VF  
Output - VCC diode voltage -IOUT = 1.5 A; Tj = 150 °C  
0.7  
1. For each channel.  
2. PowerMos leakage included  
(1)  
Table 6.  
Symbol  
td(on)  
td(off)  
Switching  
Parameter  
Test conditions  
RL = 16 Ω  
Min. Typ. Max. Unit  
Turn-on delay time  
Turn-off delay time  
27  
38  
µs  
µs  
RL = 16 Ω  
RL = 16 Ω  
RL = 16 Ω  
dVOUT/dt(on) Turn-on voltage slope  
dVOUT/dt(off) Turn-off voltage slope  
1
V/µs  
V/µs  
0.65  
Switching energy losses  
during twon  
WON  
RL = 16 Ω  
RL = 16 Ω  
0.23  
0.26  
mJ  
mJ  
Switching energy losses  
during twoff  
WOFF  
1. Operating conditions: VCC = 24 V; Tj = 25 °C  
Doc ID 018513 Rev 1  
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Electrical specifications  
VND5T100AJ-E  
Table 7.  
Symbol  
Logic inputs  
Parameter  
Input low level voltage  
Test conditions  
Min. Typ. Max. Unit  
VIL  
IIL  
0.9  
V
µA  
V
Low level input current VIN = 0.9 V  
Input high level voltage  
1
VIH  
2.1  
IIH  
High level input current VIN = 2.1 V  
Input hysteresis voltage  
10  
7
µA  
V
VI(hyst)  
0.25  
5.5  
I
IN = 1 mA  
V
VICL  
Input clamp voltage  
IIN = -1 mA  
-0.7  
V
Fault_reset_standby  
low level voltage  
VFR_Stby_L  
0.9  
V
µA  
V
Low level  
fault_reset_standby  
current  
IFR_Stby_L  
VFR_Stby = 0.9 V  
1
Fault_reset_standby  
high level voltage  
VFR_Stby_H  
2.1  
High level  
IFR_Stby_H fault_reset_standby  
current  
VFR_Stby = 2.1 V  
10  
µA  
V
Fault_reset_standby  
VFR_Stby (hyst)  
0.25  
11  
hysteresis voltage  
IFR_Stby = 15 mA (t < 10 ms)  
IFR_Stby = -1 mA  
15  
24  
V
V
Fault_reset_standby  
VFR_Stby_CL  
clamp voltage  
-0.7  
Overload latch-off reset  
treset  
time  
See Figure 4  
See Figure 5  
2
µs  
tstby  
Standby delay  
120  
1200 µs  
Figure 4.  
T
definition  
standby  
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10/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Electrical specifications  
Figure 5.  
T
definition  
reset  
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&6  
2YHUORDGꢀ  
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Table 8.  
Protections and diagnostics  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max.  
Unit  
V
CC = 24 V  
16  
22  
30  
30  
A
A
IlimH  
DC short circuit current  
5 V < VCC < 36 V  
Short circuit current  
during thermal cycling  
VCC = 24 V;  
TR < Tj < TTSD  
IlimL  
6
A
TTSD  
TR  
Shutdown temperature  
Reset temperature  
150  
175  
200  
°C  
°C  
°C  
TRS + 1 TRS + 5  
135  
TRS  
Thermal reset of status  
Thermal hysteresis  
(TTSD - TR)  
THYST  
VDEMAG  
VON  
7
°C  
V
Turn-off output voltage  
clamp  
IOUT = 1.5 A; VIN = 0;  
L = 6 mH  
VCC - 58 VCC - 64 VCC - 70  
IOUT = 50 mA;  
Output voltage drop  
limitation  
25  
mV  
Tj = -40 °C...+ 150 °C  
Doc ID 018513 Rev 1  
11/32  
 
 
Electrical specifications  
VND5T100AJ-E  
Table 9.  
Symbol  
Current sense (8 V < V < 36 V)  
CC  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
IOUT = 350 mA; VSENSE = 1 V;  
Tj = -40 °C...150 °C  
K1  
dK1/K1  
K2  
IOUT SENSE  
/I  
930 1547  
1050 1547  
2185  
2020  
Tj = 25 °C...150 °C  
IOUT = 350 mA; VSENSE = 1 V;  
Tj = -40 °C to 150 °C  
Current sense ratio  
drift  
(1)  
(1)  
(1)  
(1)  
-15  
15  
%
%
%
%
IOUT = 0.8 A; VSENSE = 2 V;  
Tj = -40 °C...150 °C  
IOUT SENSE  
/I  
1225 1528 1835  
1310 1528 1745  
Tj = 25 °C...150 °C  
IOUT = 0.8 A; VSENSE = 2 V;  
Tj = -40 °C to 150 °C  
Current sense ratio  
drift  
dK2/K2  
K3  
-12  
12  
IOUT = 1.5 A; VSENSE = 2 V;  
Tj = -40 °C...150 °C  
IOUT SENSE  
/I  
1340 1525 1715  
1405 1525 1655  
Tj = 25 °C...150 °C  
IOUT = 1.5 A; VSENSE = 2 V;  
Tj = -40 °C to 150 °C  
Current sense ratio  
drift  
dK3/K3  
K4  
-8  
8
IOUT = 6 A; VSENSE = 4 V;  
Tj = -40 °C...150 °C  
Tj = 25 °C...150 °C  
IOUT SENSE  
/I  
1450 1522 1600  
1475 1522 1560  
IOUT = 6 A; VSENSE = 4 V;  
Tj = -40 °C to 150 °C  
Current sense ratio  
drift  
dK4/K4  
-5  
5
IOUT = 0 A; VSENSE = 0 V;  
Analog sense  
leakage current  
ISENSE0  
VIN = 0 V; Tj = -40 °C...150 °C  
VIN = 5 V; Tj = -40 °C...150 °C  
0
0
1
2
µA  
µA  
Max analog sense  
output voltage  
VSENSE  
IOUT = 6 A; RSENSE = 3.9 KΩ  
VCC = 24 V; RSENSE = 3.9 KΩ  
5
V
V
Analog sense  
VSENSEH output voltage in  
7.5  
8.5  
9
9.5  
12  
fault condition(2)  
Analog sense  
ISENSEH output current in  
fault condition(2)  
VCC = 24 V; VSENSE = 5 V  
4.9  
mA  
µs  
VSENSE < 4 V, 0.07 A < IOUT < 6 A  
Delay response  
tDSENSE2H time from rising  
edge of INPUT pin  
ISENSE = 90 % of ISENSE max  
100  
200  
(see Figure 6)  
12/32  
Doc ID 018513 Rev 1  
 
VND5T100AJ-E  
Electrical specifications  
Min. Typ. Max. Unit  
Table 9.  
Current sense (8 V < V < 36 V) (continued)  
CC  
Symbol  
Parameter  
Test conditions  
Delay response  
time between rising  
edge of output  
current and rising  
edge of current  
sense  
VSENSE < 4 V,  
ISENSE = 90 % of ISENSEMAX,  
IOUT = 90 % of IOUTMAX  
ΔtDSEN  
150  
20  
µs  
µs  
SE2H  
IOUTMAX = 1.5 A (see Figure 11)  
VSENSE < 4 V, 0.07 A < IOUT < 6 A  
Delay response  
tDSENSE2L time from falling  
edge of INPUT pin  
ISENSE = 10 % of ISENSE max  
5
(see Figure 6)  
1. Parameter guaranteed by design; it is not tested.  
2. Fault condition includes: power limitation, overtemperature and open-load in OFF-state condition.  
Table 10. Open-load detection  
Symbol  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Open-load off-state  
voltage detection  
threshold  
VIN = 0 V; 8 V < VCC < 36 V;  
FR_STBY = 5 V  
VOL  
2
4
1800  
50  
V
Output short circuit to  
tDSTKON VCC detection delay at  
turn off  
See Figure 6;  
FR_STBY = 5 V  
180  
µs  
µs  
µA  
Output short circuit to  
tDFRSTK_ON VCC detection delay at  
FRSTBY activation  
See Figure 9; Input1,2 = low  
VIN = 0 V; VSENSE = 0 V;  
VOUT rising from 0 V to 4 V;  
FR_STBY = 5 V  
Off-state output current  
at VOUT = 4V  
IL(off2)  
-120  
0
VOUT = 4 V; VIN = 0 V  
Delay response from  
output rising edge to  
VSENSE rising edge in  
open-load  
VSENSE = 90 % of VSENSEH  
td_vol  
20  
µs  
RSENSE = 3.9 KΩ;  
FR_STBY = 5 V  
Figure 6.  
Current sense delay characteristics  
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Doc ID 018513 Rev 1  
13/32  
 
 
Electrical specifications  
Figure 7.  
VND5T100AJ-E  
Open-load off-state delay timing  
2XWSXWꢀVWXFNꢀDWꢀ9&&  
9287ꢀ!ꢀ92/  
9,1  
96(16(+  
9&6  
W'67.21  
*$3*&)7ꢆꢆꢆꢃꢃꢌ  
Figure 8.  
Switching characteristics  
9287  
W:RQ  
W:RII  
ꢉꢆꢒ  
ꢇꢆꢒ  
G9287ꢑGWꢄRIIꢅ  
G9287ꢑGWꢄRQꢅ  
ꢃꢆꢒ  
WI  
WU  
W
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7GꢄRIIꢅ  
W
*$3*&)7ꢆꢆꢆꢃꢃꢍ  
14/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Electrical specifications  
Figure 9.  
Output stuck to V detection delay time at FRSTBY activation  
CC  
)567%<  
9VHQVH+  
9&6  
W')567.B21  
,QSXWꢃꢓꢂ /RZ  
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Figure 10. Delay response time between rising edge of output current and rising  
edge of current sense  
9,1  
ǻW'6(16(ꢂ+  
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,
287  
,
2870$;  
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6(16(0$;  
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W
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Doc ID 018513 Rev 1  
15/32  
 
 
Electrical specifications  
VND5T100AJ-E  
Figure 11. Output voltage drop limitation  
9&&ꢀꢈ9287  
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7Mꢀ ꢀꢂꢎꢀƒ&  
7Mꢀ ꢀꢈꢍꢆꢀƒ&  
921  
,
287  
921ꢑ521ꢄ7ꢅ  
$*ꢆꢆꢆꢊꢍ9ꢃ  
Figure 12. Device behavior in overload condition  
WBUHVHW  
WBUHVHW  
)$8/7B5(6(7  
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287387Q  
&6Q  
9VHQVH+  
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ꢎꢏꢀ)$8/7B5(6(7ꢀKLJKꢀĺꢀODWFKꢈRIIꢀUHVHWꢀGLVDEOHG  
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ꢇꢏꢀRYHUORDGꢀODWFKꢈRIIꢀUHVHWꢀE\ꢀ)$8/7B5(6(7  
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16/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Electrical specifications  
Table 11.  
Truth table  
Conditions  
Fault reset standby  
Input  
Output  
Sense  
Standby  
L
L
L
0
X
X
L
L
0
Normal operation  
Overload  
H
H
Nominal  
X
X
L
L
0
H
H
> Nominal  
X
L
L
H
H
L
0
Overtemperature / short to ground  
Undervoltage  
Cycling  
Latched  
VSENSEH  
VSENSEH  
H
X
X
L
0
L
H
X
L
L
H
H
H
0
Short to VBAT  
VSENSEH  
< Nominal  
H
L
H
X
L
L
H
H
H
0
VSENSEH  
0
Open-load off-state (with pull-up)  
Negative output voltage clamp  
H
X
L
Negative  
0
Doc ID 018513 Rev 1  
17/32  
 
Electrical specifications  
VND5T100AJ-E  
Table 12. Electrical transient requirements (part 1)  
ISO 7637-2:  
2004(E)  
Test levels (1)  
Number of  
pulses or test  
times  
Burst cycle/pulse  
repetition time  
Delays and  
impedance  
III  
IV  
Test pulse  
1
2a  
- 450 V  
+ 37 V  
- 150 V  
+ 150 V  
- 12 V  
- 600 V  
+ 50 V  
- 200 V  
+ 200 V  
- 16 V  
5000 pulses  
5000 pulses  
1h  
0.5 s  
0.2 s  
5 s  
1 ms, 50 Ω  
50 µs, 2 Ω  
5 s  
3a  
90 ms  
90 ms  
100 ms  
100 ms  
0.1 µs, 50 Ω  
0.1 µs, 50 Ω  
100 ms, 0.01 Ω  
350 ms, 1 Ω  
3b  
1h  
4
1 pulse  
1 pulse  
5b (2)  
+ 123 V  
+ 174 V  
Table 13. Electrical transient requirements (part 2)  
ISO 7637-2:  
2004(E)  
Test level results  
III  
IV  
Test pulse  
1
2a  
C
C
C
E
C
C
C
C
C
C
E
C
C
C
3a  
3b(1)  
3b(2)  
4
5b (3)  
1. Without capacitor between VCC and GND.  
2. With 10 nF between VCC and GND.  
3. External load dump clamp, 58 V maximum, referred to ground.  
Table 14. Electrical transient requirements (part 3)  
Class  
Contents  
C
All functions of the device are performed as designed after exposure to disturbance.  
One or more functions of the device are not performed as designed after exposure to  
disturbance and cannot be returned to proper operation without replacing the device.  
E
18/32  
Doc ID 018513 Rev 1  
 
 
 
VND5T100AJ-E  
Electrical specifications  
2.4  
Electrical characteristics curves  
Figure 13. Off-state output current  
Figure 14. High level input current  
)LOFF ;U!=  
ꢆꢁꢃꢀ  
)IH ;U!=  
ꢃꢁꢈ  
ꢆꢁꢂꢀ  
ꢆꢁꢀꢀ  
6INꢊ ꢂꢁꢆ6  
ꢋꢁꢈ  
ꢀꢁꢅꢀ  
/FF STATE  
ꢂꢁꢈ  
6## ꢊ ꢂꢃ 6  
6IN ꢊ 6OUT ꢊ ꢀ  
ꢀꢁꢄꢀ  
ꢆꢁꢈ  
ꢀꢁꢃꢀ  
ꢀꢁꢂꢀ  
ꢀꢁꢀꢀ  
ꢀꢁꢈ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
4C ; #=  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
4C ; #=  
'!0'#&4ꢀꢀꢀꢈꢄ  
Figure 15. Input clamp voltage  
Figure 16. Input high level voltage  
6IH ;6=  
6ICL ;6=  
ꢄꢁꢅ  
ꢋꢁꢈ  
)INꢊ ꢆM!  
ꢄꢁꢄ  
ꢄꢁꢃ  
ꢄꢁꢂ  
ꢂꢁꢈ  
ꢈꢁꢅ  
ꢈꢁꢄ  
ꢈꢁꢃ  
ꢈꢁꢂ  
ꢆꢁꢈ  
ꢀꢁꢈ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
4C ; #=  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
4C ; #=  
'!0'#&4ꢀꢀꢀꢈꢅ  
'!0'#&4ꢀꢀꢀꢄꢀ  
Figure 17. Input low level voltage  
Figure 18. Input hysteresis voltage  
6IHYST ;6=  
6IL ;6=  
ꢀꢁꢌ  
ꢀꢁꢅ  
ꢀꢁꢉ  
ꢀꢁꢄ  
ꢀꢁꢈ  
ꢀꢁꢃ  
ꢀꢁꢋ  
ꢀꢁꢂ  
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ꢆꢁꢅ  
ꢆꢁꢄ  
ꢆꢁꢃ  
ꢆꢁꢂ  
ꢀꢁꢅ  
ꢀꢁꢄ  
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ꢀꢁꢂ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
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ꢆꢈꢀ  
ꢆꢉꢈ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
4C ; #=  
4C ; #=  
'!0'#&4ꢀꢀꢀꢈꢌ  
'!0'#&4ꢀꢀꢀꢄꢆ  
Doc ID 018513 Rev 1  
19/32  
 
 
 
 
 
 
 
Electrical specifications  
VND5T100AJ-E  
Figure 19. On-state resistance vs T  
Figure 20. On-state resistance vs V  
CC  
case  
2ON ;M /HM =  
5RQꢈ>P 2KP @  
ꢂꢆꢆ  
ꢂꢀꢀ  
ꢆꢅꢀ  
ꢆꢄꢀ  
ꢆꢃꢀ  
ꢆꢂꢀ  
ꢆꢀꢀ  
ꢅꢀ  
ꢃꢇꢆ  
ꢃꢋꢆ  
ꢃꢍꢆ  
4Cꢊ ꢆꢈꢀ #  
4Cꢊ ꢆꢂꢈ #  
,RXW ꢈꢀꢉꢄ$  
9FF ꢈꢁꢃ9  
ꢃꢂꢆ  
4Cꢊ ꢂꢈ #  
4Cꢊ ꢇꢃꢀ #  
ꢃꢆꢆ  
ꢇꢆ  
ꢋꢆ  
ꢍꢆ  
ꢂꢆ  
ꢄꢀ  
ꢃꢀ  
ꢂꢀ  
ꢈꢁꢀꢀ  
ꢆꢀꢁꢀꢀ ꢆꢈꢁꢀꢀ ꢂꢀꢁꢀꢀ ꢂꢈꢁꢀꢀ ꢋꢀꢁꢀꢀ ꢋꢈꢁꢀꢀ ꢃꢀꢁꢀꢀ  
6CC ;6=  
ꢈꢎꢆ  
ꢈꢂꢎ  
ꢂꢎ  
ꢎꢆ  
ꢊꢎ  
ꢃꢆꢆ  
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7Fꢈ>ƒ&@  
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("1($'5ꢀꢀꢀꢁꢂ  
Figure 21. I  
vs T  
Figure 22. Turn-on voltage slope  
LIMH  
case  
ꢍD6OUTꢎDTꢏ/N ;6ꢎUS=  
)LIMH ;!=  
ꢂꢋ  
ꢆꢁꢅ  
ꢆꢁꢄ  
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ꢂꢂ  
6CCꢊ ꢂꢃ6  
6CCꢊ ꢂꢃ6  
2Lꢊ ꢆꢄȍ  
ꢆꢁꢃ  
ꢆꢁꢂ  
ꢂꢆꢁꢈ  
ꢂꢆ  
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ꢀꢁꢄ  
ꢀꢁꢃ  
ꢀꢁꢂ  
ꢂꢀꢁꢈ  
ꢂꢀ  
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ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
4C ; #=  
4C ; #=  
'!0'#&4ꢀꢀꢀꢄꢈ  
'!0'#&4ꢀꢀꢀꢄꢃ  
Figure 23. Turn-off voltage slope  
ꢍD6OUTꢎDTꢏ/FF ;6ꢎUS=  
ꢆꢁꢃꢀ  
ꢆꢁꢂꢀ  
6CCꢊ ꢂꢃ6  
ꢆꢁꢀꢀ  
ꢀꢁꢅꢀ  
ꢀꢁꢄꢀ  
ꢀꢁꢃꢀ  
ꢀꢁꢂꢀ  
ꢀꢁꢀꢀ  
2Lꢊ ꢆꢄȍ  
ꢇꢈꢀ  
ꢇꢂꢈ  
ꢂꢈ  
ꢈꢀ  
ꢉꢈ  
ꢆꢀꢀ  
ꢆꢂꢈ  
ꢆꢈꢀ  
ꢆꢉꢈ  
4C ; #=  
'!0'#&4ꢀꢀꢀꢄꢄ  
20/32  
Doc ID 018513 Rev 1  
 
 
 
 
 
VND5T100AJ-E  
Application information  
3
Application information  
Figure 24. Application schematic  
ꢖꢎ9  
9&&  
5SURW  
)5B6WE\  
'
OG  
5SURW  
,1  
0&8  
287  
&6  
5SURW  
*1'  
56(16(  
&
H[W  
9*1'  
'
*1'  
*$3*&)7ꢆꢆꢆꢃꢃꢉ  
3.1  
GND protection network against reverse battery  
3.1.1  
Solution 1: resistor in the ground line (R  
only)  
GND  
This solution can be used with any type of load.  
The following is an indication on how to dimension the R  
resistor.  
GND  
1.  
2.  
R
R
600 mV / (I  
).  
S(on)max  
GND  
GND  
≥ (−V ) / (-I  
)
CC  
GND  
where -I  
is the DC reverse ground pin current and can be found in the absolute  
GND  
maximum rating section of the device datasheet.  
Power dissipation in R  
(when V < 0: during reverse battery situations) is:  
CC  
GND  
2
P = (-V ) / R  
D
CC  
GND  
This resistor can be shared amongst several different HSDs. Please note that the value of  
this resistor should be calculated with formula (1) where I  
maximum on-state currents of the different devices.  
becomes the sum of the  
S(on)max  
Please note that if the microprocessor ground is not shared by the device ground then the  
produces a shift (I * R ) in the input thresholds and the status output  
R
GND  
S(on)max  
GND  
values. This shift varies depending on how many devices are ON in the case of several high  
side drivers sharing the same R  
.
GND  
If the calculated power dissipation leads to a large resistor or several devices have to share  
the same resistor then ST suggests Solution 2 is used (see below).  
Doc ID 018513 Rev 1  
21/32  
 
 
 
 
Application information  
VND5T100AJ-E  
3.1.2  
Solution 2: diode (D  
) in the ground line  
GND  
A resistor (R  
inductive load.  
= 4.7 kΩ) should be inserted in parallel to D  
if the device drives an  
GND  
GND  
This small signal diode can be safely shared amongst several different HSDs. Also in this  
case, the presence of the ground network produces a shift (600 mV) in the input threshold  
and in the status output values, if the microprocessor ground is not common to the device  
ground. This shift not varies if more than one HSD shares the same diode/resistor network.  
3.2  
3.3  
Load dump protection  
D is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds to  
ld  
V
max DC rating. The same applies if the device is subject to transients on the V line  
CC  
CC  
that are greater than the ones shown in the ISO T/R 7637/2 table.  
MCU I/Os protection  
If a ground protection network is used and negative transient are present on the V line,  
CC  
the control pins are pulled negative. ST suggests that a resistor (R ) be inserted in line to  
prot  
prevent the microcontroller I/O pins to latch-up.  
The value of these resistors is a compromise between the leakage current of microcontroller  
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of  
microcontroller I/Os.  
-V  
/I  
R  
(V  
-V -V  
) / I  
CCpeak latchup  
prot  
OHμC IH GND IHmax  
Calculation example:  
For V = -600 V and I  
20 mA; V 4.5 V  
OHμC  
CCpeak  
latchup  
30 kΩ ≤ R  
180 kΩ.  
prot  
Recommended R  
value is 60 kΩ.  
prot  
22/32  
Doc ID 018513 Rev 1  
 
 
 
VND5T100AJ-E  
Application information  
3.4  
Maximum demagnetization energy (VCC = 24 V)  
Figure 25. Maximum turn-off current versus inductance  
10  
A
B
C
1
0.1  
L (mH)  
1
10  
100  
1000  
A: T  
= 150°C single pulse  
jstart  
B: T  
C: T  
= 100°C repetitive pulse  
= 125°C repetitive pulse  
jstart  
jstart  
VIN, IL  
Demagnetization  
Demagnetization  
Demagnetization  
t
Note:  
Values are generated with R =0 Ω.  
L
In case of repetitive pulses, T  
(at beginning of each demagnetization) of every pulse must not exceed the temperature  
jstart  
specified above for curves A and B.  
Doc ID 018513 Rev 1  
23/32  
 
 
Package and PCB thermal data  
VND5T100AJ-E  
4
Package and PCB thermal data  
4.1  
PowerSSO-12 thermal data  
Figure 26. PowerSSO-12 PC board  
*$3*&)7ꢆꢆꢆꢃꢂꢆ  
.
Note:  
Layout condition of R and Z measurements (Board finish thickness 1.6 mm +/- 10 %; Board double layer; Board  
th  
th  
dimension 77 mm x 86 mm; Board Material FR4; Cu thickness 0.070 mm (front and back side); Thermal vias separation  
1.2 mm; Thermal via diameter 0.3 mm +/- 0.08 mm; Cu thickness on vias 0.025 mm; Footprint dimension 4.1 mm x 6.5 mm)  
Figure 27.  
R
vs PCB copper area in open box free air condition (one channel ON)  
thj-amb  
RTHjamb  
65  
60  
55  
50  
45  
40  
35  
30  
RTHjamb  
0
2
4
6
8
10  
GAPGCFT000124  
24/32  
Doc ID 018513 Rev 1  
 
 
 
 
VND5T100AJ-E  
Package and PCB thermal data  
Figure 28. PowerSSO-12 thermal impedance junction ambient single pulse (one  
channel ON)  
ZTH (°C/W)  
100  
Cu=8 cm2  
Cu=2 cm2  
Cu=foot print  
10  
1
0.1  
0.0001  
0.001  
0.01  
0.1  
Time (s)  
1
10  
100  
1000  
GAPGCFT000125  
Figure 29. Thermal fitting model of a double channel HSD in PowerSSO-12  
*$3*&)7ꢆꢆꢆꢃꢂꢃ  
Note:  
The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded protections (power  
limitation or thermal cycling during thermal shutdown) are not triggered.  
Equation 1: pulse calculation formula  
ZTHδ = RTH ⋅ δ + ZTHtp(1 δ)  
δ = tp T  
where  
Doc ID 018513 Rev 1  
25/32  
 
 
Package and PCB thermal data  
VND5T100AJ-E  
8
Table 15. Thermal parameters  
Area/island (cm2)  
R1 = R7 (°C/W)  
R2 = R8 (°C/W)  
R3 (°C/W)  
Footprint  
0.8  
2
1.5  
3
R4 (°C/W)  
8
8
7
R5 (°C/W)  
22  
15  
20  
10  
15  
R6 (°C/W)  
26  
C1 = C7 (W.s/°C)  
C2 = C8 (W.s/°C)  
C3 (W.s/°C)  
0.0008  
0.005  
0.05  
0.2  
C4 (W.s/°C)  
0.1  
0.8  
6
0.1  
1
C5 (W.s/°C)  
0.27  
3
C6 (W.s/°C)  
9
26/32  
Doc ID 018513 Rev 1  
 
VND5T100AJ-E  
Package and packing information  
5
Package and packing information  
5.1  
ECOPACK®  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
5.2  
PowerSSO-12 mechanical data  
Figure 30. PowerSSO-12 package dimensions  
*$3*&)7ꢆꢆꢆꢃꢂꢂ  
Doc ID 018513 Rev 1  
27/32  
 
 
 
 
Package and packing information  
VND5T100AJ-E  
Table 16. PowerSSO-12 mechanical data  
Millimeters  
Typ.  
Symbol  
Min.  
Max.  
A
A1  
A2  
B
1.250  
0.000  
1.100  
0.230  
0.190  
4.800  
3.800  
-
-
1.620  
0.100  
1.650  
0.410  
0.250  
5.000  
4.000  
-
-
-
-
C
-
D
-
E
-
e
0.800  
H
5.800  
0.250  
0.400  
0°  
-
-
-
-
-
-
-
6.200  
0.500  
1.270  
8°  
h
L
k
X
2.200  
2.900  
-
2.800  
3.500  
0.100  
Y
ddd  
28/32  
Doc ID 018513 Rev 1  
 
VND5T100AJ-E  
Package and packing information  
5.3  
Packing information  
Figure 31. PowerSSO-12 tube shipment (no suffix)  
All dimensions are in mm.  
B
Base q.ty  
100  
2000  
532  
C
Bulk q.ty  
Tube length ( 0.5)  
A
1.85  
6.75  
0.6  
A
B
C ( 0.1)  
GA P GCFT000123  
Figure 32. PowerSSO-12 tape and reel shipment (suffix “TR”)  
Reel dimensions  
Base q.ty  
Bulk q.ty  
A (max)  
B (min)  
C ( 0.2)  
F
2500  
2500  
330  
1.5  
13  
20.2  
12.4  
60  
G (+ 2 / -0)  
N (min)  
T (max)  
18.4  
Tape dimensions  
According to Electronic Industries Association  
(EIA) Standard 481 rev. A, Feb. 1986  
Tape width  
W
12  
4
Tape hole spacing  
Component spacing  
Hole diameter  
P0 ( 0.1)  
P
8
D ( 0.05)  
D1 (min)  
F ( 0.1)  
K (max)  
P1 ( 0.1)  
1.5  
1.5  
5.5  
4.5  
2
Hole diameter  
Hole position  
Compartment depth  
Hole spacing  
All dimensions are in mm.  
End  
Start  
Top  
No components  
500mm min  
Components  
No components  
500mm min  
cover  
tape  
Empty components pockets  
saled with cover tape.  
User direction of feed  
Doc ID 018513 Rev 1  
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Order code  
VND5T100AJ-E  
6
Order code  
Table 17. Device summary  
Package  
Order codes  
Tube  
Tape and reel  
VND5T100AJTR-E  
PowerSSO-12  
VND5T100AJ-E  
30/32  
Doc ID 018513 Rev 1  
 
 
VND5T100AJ-E  
Revision history  
7
Revision history  
Table 18. Document revision history  
Date  
Revision  
Changes  
08-Mar-2011  
1
Initial release.  
Doc ID 018513 Rev 1  
31/32  
 
 
VND5T100AJ-E  
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time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
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ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
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32/32  
Doc ID 018513 Rev 1  

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