VNP14NV04-1 [STMICROELECTRONICS]

TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,12A I(D),TO-251AA;
VNP14NV04-1
型号: VNP14NV04-1
厂家: ST    ST
描述:

TRANSISTOR,MOSFET,N-CHANNEL,40V V(BR)DSS,12A I(D),TO-251AA

文件: 总17页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
VNS14NV04 / VND14NV04  
/ VND14NV04-1 / VNP14NV04  
“OMNIFET II”:  
FULLY AUTOPROTECTED POWER MOSFET  
PRELIMINARY DATA  
TYPE  
RDS(on)  
Ilim  
Vclamp  
VNS14NV04  
VND14NV04  
VND14NV04-1  
VNP14NV04  
3
35 mΩ  
12 A  
40 V  
1
SO-8  
TO252 (DPAK)  
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
3
2
3
2
1
1
TO220  
TO251 (IPAK)  
ORDER CODES:  
SO-8  
VNS14NV04  
VND14NV04  
VNP14NV04  
VND14NV04-1  
TO-252 (DPAK)  
TO-220  
TO-251 (IPAK)  
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
intended for replacement of standard Power  
MOSFETS from DC up to 50KHz  
applications.Built in thermal shutdown, linear  
current limitation |and overvoltage clamp protect  
the chip in harsh environments.  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
DESCRIPTION  
The VNS14NV04, VND14NV04, VNP14NV04,  
VNP14NV04-1, are monolithic devices designed  
in STMicroelectronics VIPower M0-3 Technology,  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
BLOCK DIAGRAM  
DRAIN  
2
Overvoltage  
Clamp  
INPUT  
Gate  
Control  
1
Linear  
Current  
Limiter  
Over  
Temperature  
3
SOURCE  
October 2000  
1/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
ABSOLUTE MAXIMUM RATING  
Value  
DPAK TO-220  
Symbol  
Parameter  
Unit  
SO-8  
IPAK  
VDS  
VIN  
Drain-source Voltage (VIN=0V)  
Input Voltage  
Internally Clamped  
V
V
Internally Clamped  
IIN  
Input Current  
+/-20  
mA  
RIN MIN  
ID  
Minimum Input Series Impedance  
Drain Current  
10  
Internally Limited  
-15  
A
IR  
Reverse DC Output Current  
Electrostatic Discharge (R=1.5K, C=100pF)  
A
VESD1  
4000  
V
Electrostatic Discharge on output pin only  
(R=330, C=150pF)  
VESD2  
16500  
V
Ptot  
Tj  
Total Dissipation at Tc=25°C  
Operating Junction Temperature  
Case Operating Temperature  
Storage Temperature  
8.3  
50  
70  
50  
W
°C  
°C  
°C  
Internally limited  
Internally limited  
-55 to 150  
Tc  
Tstg  
CONNECTION DIAGRAM (TOP VIEW)  
SO-8 Package (*)  
1
DRAIN  
DRAIN  
DRAIN  
DRAIN  
SOURCE  
SOURCE  
SOURCE  
INPUT  
8
4
5
(*) For the pins configurationrelated toDPAK, IPAK, TO-220 see outlines at page 1.  
CURRENT AND VOLTAGE CONVENTIONS  
I
D
V
DS  
DRAIN  
R
I
IN  
IN  
INPUT  
SOURCE  
V
IN  
2/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
THERMAL DATA  
Symbol  
Value  
Parameter  
Unit  
SO-8  
DPAK  
TO-220  
IPAK  
Rthj-case  
Rthj-lead  
Rthj-amb  
Thermal Resistance Junction-case  
Thermal Resistance Junction-lead  
Thermal Resistance Junction-ambient  
MAX  
MAX  
MAX  
2.5  
1.8  
2.5  
°C/W  
°C/W  
°C/W  
15  
65(*)  
52.5(*)  
50  
100  
2
(*) When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 µm thick) connected to all DRAIN pins.  
ELECTRICAL CHARACTERISTICS (-40°C < T < 150°C, unless otherwise specified)  
j
OFF  
Symbol  
Parameter  
Drain-source Clamp  
Voltage  
Test Conditions  
VIN=0V; ID=7A  
Min  
Typ  
Max  
Unit  
VCLAMP  
40  
45  
55  
V
Drain-source Clamp  
Threshold Voltage  
VCLTH  
VINTH  
IISS  
VIN=0V; ID=2mA  
VDS=VIN; ID=1mA  
36  
V
V
Input Threshold Voltage  
0.5  
2.5  
Supply Current from Input  
Pin  
VDS=0V; VIN=5V  
100  
6.8  
150  
µA  
Input-Source Clamp  
Voltage  
IIN=1mA  
6
8
VINCL  
IDSS  
V
IIN=-1mA  
-1.0  
-0.3  
30  
VDS=13V; VIN=0V; Tj=25°C  
VDS=25V; VIN=0V  
Zero Input Voltage Drain  
Current (VIN=0V)  
µA  
75  
ON  
Symbol  
Parameter  
Test Conditions  
VIN=5V; ID=7A; Tj=25°C  
VIN=5V; ID=7A  
Min  
Typ  
Max  
35  
Unit  
Static Drain-source On  
Resistance  
RDS(on)  
mΩ  
70  
3/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
ELECTRICAL CHARACTERISTICS (continued) (T =25°C, unless otherwise specified)  
j
DYNAMIC  
Symbol  
gfs (*)  
Parameter  
Forward  
Test Conditions  
VDD=13V; ID=7A  
Min  
Typ  
19  
Max  
Unit  
S
Transconductance  
Output Capacitance  
COSS  
VDS=13V; f=1MHz; VIN=0V  
400  
pF  
SWITCHING  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
50  
Max  
150  
750  
1000  
600  
3.6  
Unit  
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
Turn-on Delay Time  
Rise Time  
V
DD=15V; ID=7A  
250  
320  
200  
1.2  
7.5  
13  
Vgen=5V; Rgen=RIN MIN=10Ω  
Turn-off Delay Time  
Fall Time  
(see figure 1)  
Turn-on Delay Time  
Rise Time  
VDD=15V; ID=7A  
Vgen=5V; Rgen=2.2KΩ  
(see figure 1)  
22.5  
40  
Turn-off Delay Time  
Fall Time  
10  
30  
VDD=15V; ID=7A  
(di/dt)on  
Qi  
Turn-on Current Slope  
Total Input Charge  
25  
20  
A/µs  
Vgen=5V; Rgen=RIN MIN=10Ω  
VDD=12V; ID =7A; VIN=5V; Igen=2.13mA  
(see figure 5)  
nC  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
-0.8  
300  
0.8  
5
Max  
Unit  
V
V
SD (*)  
trr  
Forward On Voltage  
ISD =7A; V =0V  
IN  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
ISD=7A; di/dt=40A/µs  
VDD=30V; L=200µH  
(see test circuit, figure 2)  
ns  
µC  
A
Qrr  
IRRM  
PROTECTIONS (-40°C < T < 150°C, unless otherwise specified)  
j
Symbol  
Parameter  
Test Conditions  
VIN=6V; VDS=13V  
VIN=6V; VDS = 13V  
Min  
Typ  
Max  
Unit  
Ilim  
Drain Current Limit  
12  
18  
24  
A
Step Response Current  
Limit  
tdlim  
Tjsh  
40  
µs  
°C  
Overtemperature  
Shutdown  
150  
175  
Tjrs  
Igf  
Overtemperature Reset  
Fault Sink Current  
135  
10  
°C  
VIN=5V; VDS=13V; T=Tjsh  
15  
20  
mA  
j
starting Tj=25°C; VDD =24V  
VIN= 5V; Rgen=RIN MIN=10; L=24mH  
(see figures 3 & 4)  
Single Pulse  
Eas  
400  
mJ  
Avalanche Energy  
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%  
4/17  
2
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
PROTECTION FEATURES  
- OVERTEMPERATURE AND SHORT CIRCUIT  
PROTECTION:  
During normal operation, the INPUT pin is  
electrically connected to the gate of the internal  
power MOSFET through a low impedance path.  
these are based on sensing the chip temperature  
and are not dependent on the input voltage. The  
location of the sensing element on the chip in the  
power stage area ensures fast, accurate detection  
of the junction temperature. Overtemperature  
cutout occurs in the range 150 to 190 °C, a typical  
value being 170 °C. The device is automatically  
restarted when the chip temperature falls of about  
15°C below shut-down temperature.  
The device then behaves like a standard power  
MOSFET and can be used as a switch from DC up  
to 50KHz. The only difference from the user’s  
standpoint is that a small DC current I  
(typ.  
ISS  
100µA) flows into the INPUT pin in order to supply  
the internal circuitry.  
The device integrates:  
- STATUS FEEDBACK:  
- OVERVOLTAGE CLAMP PROTECTION:  
in the case of an overtemperature fault condition  
internally set at 45V, along with the rugged  
avalanche characteristics of the Power MOSFET  
stage give this device unrivalled ruggedness and  
energy handling capability. This feature is mainly  
important when driving inductive loads.  
(T > T ), the device tries to sink a diagnostic  
j
jsh  
current I through the INPUT pin in order to  
gf  
indicate fault condition. If driven from a low  
impedance source, this current may be used in  
order to warn the control circuit of a device  
shutdown. If the drive impedance is high enough  
so that the INPUT pin driver is not able to supply  
- LINEAR CURRENT LIMITER CIRCUIT:  
limits the drain current I to I  
whatever the  
D
lim  
the current I , the INPUT pin will fall to 0V. This  
gf  
INPUT pin voltages. When the current limiter is  
active, the device operates in the linear region, so  
power dissipation may exceed the capability of the  
heatsink. Both case and junction temperatures  
increase, and if this phase lasts long enough,  
will not however affect the device operation:  
no requirement is put on the current capability  
of the INPUT pin driver except to be able to  
supply the normal operation drive current I  
.
ISS  
Additional features of this device are ESD  
protection according to the Human Body model  
and the ability to be driven from a TTL Logic  
circuit.  
junction  
temperature  
may  
reach  
the  
overtemperature threshold T  
.
jsh  
5/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
Fig.1: Switching Time Test Circuit for Resistive Load  
VD  
Rgen  
Vgen  
I
D
90%  
10%  
t
t
f
r
t
t
d(on)  
t
d(off)  
V
gen  
t
Fig.2: Test Circuit for Diode Recovery Times  
A
A
B
D
I
FAST  
DIODE  
L=100uH  
OMNIFET  
S
B
25 Ω  
D
S
VDD  
Rgen  
I
OMNIFET  
Vgen  
8.5 Ω  
6/17  
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
Fig. 3: Unclamped Inductive Load Test Circuits  
Fig. 4: Unclamped Inductive Waveforms  
R
GEN  
V
IN  
P
W
Fig. 5: Input Charge Test Circuit  
GEN  
VIN  
ND8003  
7/17  
1
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
Thermal Impedance for DPAK/IPAK  
Thermal Impedance for TO-220  
8/17  
1
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
TO-251 (IPAK) MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
2.2  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.027  
0.025  
0.204  
MAX.  
0.094  
0.043  
0.051  
0.031  
0.212  
0.033  
A
A1  
A3  
B
0.9  
1.1  
0.7  
1.3  
0.64  
5.2  
0.9  
B2  
B3  
B5  
B6  
C
5.4  
0.85  
0.3  
0.012  
0.95  
0.6  
0.6  
6.2  
6.6  
4.6  
16.3  
9.4  
1.2  
1
0.037  
0.023  
0.023  
0.244  
0.260  
0.181  
0.641  
0.370  
0.047  
0.039  
0.45  
0.48  
6
0.017  
0.019  
0.236  
0.252  
0.173  
0.626  
0.354  
0.031  
C2  
D
E
6.4  
4.4  
15.9  
9
G
H
L
L1  
L2  
0.8  
0.8  
0.031  
H
L
D
L2  
L1  
9/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
TO-252 (DPAK) MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
2.2  
TYP  
MAX.  
2.4  
MIN.  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.019  
0.236  
0.252  
0.173  
0.368  
MAX.  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.260  
0.181  
0.397  
A
A1  
A2  
B
0.9  
1.1  
0.03  
0.64  
5.2  
0.23  
0.9  
B2  
C
5.4  
0.45  
0.48  
6
0.6  
C2  
D
0.6  
6.2  
E
6.4  
6.6  
G
4.4  
4.6  
H
9.35  
10.1  
L2  
L4  
R
0.8  
0.031  
0.6  
1
0.023  
0.039  
0.2  
0.008  
V2  
0°  
8°  
0°  
8°  
10/17  
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
TO-220 MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
MAX.  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
MIN.  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
MAX.  
0.181  
0.051  
0.107  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
A
C
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.260  
3.5  
3.93  
0.154  
0.102  
2.6  
DIA.  
3.75  
3.85  
0.147  
0.151  
.
/
#
&
%
.
.
.
.
.
8
C
K
)
*
*
&
)
(
8
(
(
.
11/17  
1
1
1
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
SO-8 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
TYP  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
F
8 (max.)  
12/17  
1
1
1
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
TUBE SHIPMENT (no suffix)  
DPAK FOOTPRINT  
A
6 . 7  
1 .8  
3 .0  
1 .6  
Base Q.ty  
75  
3000  
532  
6
C
Bulk Q.ty  
Tube length (± 0.5)  
2 .3  
2 .3  
6 . 7  
A
B
B
21.3  
0.6  
C (± 0.1)  
All dimensions are in mm.  
TAPE AND REEL SHIPMENT (suffix “13TR”)  
REEL DIMENSIONS  
Base Q.ty  
Bulk Q.ty  
A (max)  
B (min)  
C (± 0.2)  
F
2500  
2500  
330  
1.5  
13  
20.2  
16.4  
60  
G (+ 2 / -0)  
N (min)  
T (max)  
22.4  
TAPE DIMENSIONS  
According to Electronic Industries Association  
(EIA) Standard 481 rev. A, Feb 1986  
Tape width  
W
P0 (± 0.1)  
P
16  
4
Tape Hole Spacing  
Component Spacing  
Hole Diameter  
8
D (± 0.1/-0) 1.5  
Hole Diameter  
D1 (min)  
F (± 0.05)  
K (max)  
1.5  
7.5  
6.5  
2
Hole Position  
Compartment Depth  
Hole Spacing  
P1 (± 0.1)  
All dimensions are in mm.  
End  
Start  
Top  
Nocomponents  
500mm min  
Components  
Nocomponents  
cover  
tape  
Emptycomponents pockets  
saled with cover tape.  
500mm min  
User directionof feed  
13/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
SO-8 TUBE SHIPMENT (no suffix)  
B
Base Q.ty  
Bulk Q.ty  
100  
2000  
532  
3.2  
6
C
A
Tube length (± 0.5)  
A
B
C (± 0.1)  
0.6  
All dimensions are in mm.  
TAPE AND REEL SHIPMENT (suffix “13TR”)  
REEL DIMENSIONS  
Base Q.ty  
Bulk Q.ty  
A (max)  
B (min)  
C (± 0.2)  
F
2500  
2500  
330  
1.5  
13  
20.2  
12.4  
60  
G (+ 2 / -0)  
N (min)  
T (max)  
18.4  
All dimensions are in mm.  
TAPE DIMENSIONS  
According to Electronic Industries Association  
(EIA) Standard 481 rev. A, Feb 1986  
Tape width  
W
P0 (± 0.1)  
P
12  
4
Tape Hole Spacing  
Component Spacing  
Hole Diameter  
8
D (± 0.1/-0) 1.5  
Hole Diameter  
D1 (min)  
F (± 0.05)  
K (max)  
1.5  
5.5  
4.5  
2
Hole Position  
Compartment Depth  
Hole Spacing  
P1 (± 0.1)  
End  
All dimensions are in mm.  
Start  
Top  
Nocomponents  
500mm min  
Components  
No components  
cover  
tape  
Emptycomponents pockets  
saled with cover tape.  
500mm min  
User directionof feed  
14/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
TO-220 TUBE SHIPMENT (no suffix)  
A
Base Q.ty  
Bulk Q.ty  
50  
1000  
532  
5.5  
Tube length (± 0.5)  
A
B
B
31.4  
0.75  
C (± 0.1)  
All dimensions are in mm.  
C
15/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
IPAK TUBE SHIPMENT (no suffix)  
A
C
Base Q.ty  
75  
3000  
532  
6
Bulk Q.ty  
Tube length (± 0.5)  
A
B
B
21.3  
0.6  
C (± 0.1)  
All dimensions are in mm.  
MECHANICAL POLARIZATION  
16/17  
1
VNS14NV04 / VND14NV04 / VND14NV04-1 / VNP14NV04  
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
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相关型号:

VNP20N07

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP20N07-E

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP20N07FI

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
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VNP28N04

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP28N04FI

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP35N07

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP35N07-E

"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR

VNP35N07FI

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
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VNP35N07TR-E

35 A BUF OR INV BASED PRPHL DRVR, SFM3, ROHS COMPLIANT, TO-220, 3 PIN
STMICROELECTR

VNP35NV04

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET
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VNP35NV04-E

OMNIFET II fully autoprotected Power MOSFET
STMICROELECTR

VNP49N04

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMICROELECTR