VNQ660SP [STMICROELECTRONICS]
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY; 四通道高侧固态继电器
| 型号： | VNQ660SP |
| 厂家： | 
ST |
| 描述： | QUAD CHANNEL HIGH SIDE SOLID STATE RELAY |
| 文件： | 总16页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
VNQ660SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
R
I
V
CC
DS(on)
OUT
VNQ660SP
50mΩ (*)
6A
36 V
(*) Per each channel
■OUTPUT CURRENT PER CHANNEL: 6A
■ CMOS COMPATIBLE INPUTS
■ OPEN LOAD DETECTION (OFF STATE)
■ UNDERVOLTAGE & OVERVOLTAGE
SHUT- DOWN
10
1
PowerSO-10™
■ OVERVOLTAGE CLAMP
■ THERMAL SHUT-DOWN
ORDER CODES
TUBE
■ CURRENT LIMITATION
PACKAGE
T&R
■ VERY LOW STAND-BY POWER DISSIPATION
■ PROTECTION AGAINST:
VNQ660SP
VNQ660SP13TR
PowerSO-10™
LOSS OF GROUND & LOSS OF VCC
■ REVERSE BATTERY PROTECTION (**)
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
DESCRIPTION
The VNQ660SP is a monolithic device made by
using|
STMicroelectronics
VIPower
M0-3
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
V
V
Supply voltage (continuous)
Reverse supply voltage (continuous)
41
-0.3
CC
-V
V
CC
I
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Internally limited
-15
A
OUT
I
A
R
I
+/- 10
mA
mA
mA
IN
I
Status current
+/- 10
STAT
I
Ground current at T <25°C (continuous)
-200
GND
C
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
4000
V
V
V
- STATUS
- OUTPUT
ESD
5000
V
- V
5000
V
CC
P
Power dissipation at T =25°C
113.6
W
°C
°C
mJ
tot
C
T
Junction operating temperature
Storage temperature
-40 to 150
-65 to 150
150
j
T
stg
E
Non repetitive clamping energy at T =25°C
C
C
(**) See application schematic at page 8
July 2003
1/16
VNQ660SP
BLOCK DIAGRAM
V
CC
OVERVOLTAGE
UNDERVOLTAGE
DEMAG 1
DRIVER 1
OUTPUT 1
I
LIM1
INPUT 1
INPUT 2
DEMAG 2
DRIVER 2
DRIVER 3
OUTPUT 2
OUTPUT 3
I
LIM2
INPUT 3
INPUT 4
STATUS
LOGIC
DEMAG 3
I
LIM3
STATUS
DEMAG 4
DRIVER 4
OUTPUT 4
OVERTEMP. 1
I
LIM4
OVERTEMP. 2
OVERTEMP. 3
OVERTEMP. 4
OPEN LOAD
OFF-STATE
GND
CURRENT AND VOLTAGE CONVENTIONS
I
S
V
I
CC
IN1
I
OUT1
V
CC
INPUT 1
OUTPUT 1
OUTPUT 2
I
I
V
OUT1
OUT2
IN2
V
IN1
INPUT 2
INPUT 3
V
OUT2
I
I
V
IN3
IN2
OUT3
OUTPUT 3
V
OUT4
OUT3
I
V
IN4
I
IN3
OUTPUT 4
GND
INPUT 4
STATUS
V
V
OUT4
IN4
V
I
STAT
I
STAT
GND
2/16
VNQ660SP
CONNECTION DIAGRAM (TOP VIEW)
GND
5
4
3
2
1
6
7
STATUS
INPUT 4
INPUT 3
INPUT 2
INPUT 1
OUTPUT 4
OUTPUT 3
OUTPUT 2
OUTPUT 1
8
9
10
11
V
CC
THERMAL DATA
Symbol
Parameter
Value
1.1
Unit
°C/W
°C/W
R
Thermal resistance junction-case (MAX) (all channels on)
Thermal resistance junction-ambient (MAX)
thj-case
R
51.1 (*)
thj-amb
(*) When mounted on a standard single-sided FR-4 board with 0.5cm² of Cu (at least 35 µm thick). Horizontal mounting and no artificial air
flow.
ELECTRICAL CHARACTERISTICS (VCC=6V up to 24V; -40°C<Tj<150°C unless otherwise specified)
POWER (per each channel)
Symbol
Parameter
Test Conditions
Min
6
Typ
13
Max
36
6
Unit
V
V
(**)
(**)
Operating supply voltage
Undervoltage shutdown
Undervoltage hysteresis
Overvoltage shutdown
Overvoltage hysteresis
CC
V
3.5
0.2
36
4.6
V
USD
V
(**)
1
V
UVhyst
V
(**)
V
OV
V
(**)
0.25
V
OVhyst
Off state; Input=0V; V =13.5V
12
40
µA
CC
Off state; Input=0V; V =13.5V
CC
I (**)
Supply current
S
T =25°C
12
6
25
12
50
100
130
50
0
µA
mA
mΩ
mΩ
mΩ
µA
j
On state Input=3.25V; 9V<V <18V
CC
I
I
I
=1A; T=25°C; 9V<V <18V
40
85
OUT
OUT
OUT
j
CC
R
On state resistance
=1A, T=150°C; 9V<V <18V
j CC
DS(on)
=1A; V =6V
CC
I
Off state output current
Off State Output Current
Off State Output Current
Off State Output Current
V =V =0V
OUT
0
L(off1)
IN
I
V =0V; V
=3.5V
-75
µA
L(off2)
IN
OUT
I
V =V
=0V; V =13V; T =125°C
5
µA
L(off3)
IN
OUT
OUT
CC
j
I
V
=V
=0V; V =13V; T =25°C
3
µA
L(off4)
IN
CC
j
(**) Per device.
3/16
VNQ660SP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (VCC=13V)
Symbol
Parameter
Turn-on delay time
Turn-on delay time
Test Conditions
R =13Ω channels 1,2,3,4
Min
Typ
40
Max
Unit
µs
t
70
d(on)
L
t
R =13Ω channels 1,2,3,4
40
140
µs
d(off)
L
See
dV
dV
/dt
Turn-on voltage slope
Turn-off voltage slope
R =13Ω channels 1,2,3,4
relative
diagram
V/µs
V/µs
OUT (on)
L
See
relative
diagram
/dt
R =13Ω channels 1,2,3,4
OUT (off)
L
PROTECTIONS (per each channel)
Symbol
Parameter
Shutdown temperature
Reset temperature
Thermal hysteresis
Test Conditions
Min
150
135
7
Typ
Max
Unit
°C
°C
°C
A
T
170
200
TSD
T
R
T
15
10
25
18
18
hyst
9V<V <36V
6
CC
I
DC Short circuit current
lim
6V<V <36V
A
CC
Turn-off output voltage
clamp
V
I
=2A; V =0V; L=6mH
V
-41 V -48 V -55
V
demag
OUT
IN
CC
CC
CC
Status low output
voltage
V
I
=1.6mA
0.5
10
25
8
V
STAT
STAT
I
Status leakage current
Normal operation; V
Normal operation; V
=5V
=5V
µA
pF
LSTAT
STAT
Status pin input
capacitance
C
STAT
STAT
I
=1mA
6
6.8
V
V
STAT
V
Status clamp voltage
SCL
I
=-1mA
-0.7
STAT
LOGIC INPUT (per each channel)
Symbol
Parameter
Input Low Level Voltage
Input High Level Voltage
Input Hysteresis Voltage
Input high level voltage
Input Current
Test Conditions
Min
Typ
Max
Unit
V
V
1.25
IL
V
3.25
0.5
V
IH
V
V
HYST
I
V =3.25V
10
µA
µA
pF
V
IH
IN
I
V
=1.25V
IN
1
6
IL
C
Input Capacitance
40
8
IN
Input Clamp Voltage
I =1mA
6.8
IN
V
ICL
I =-1mA
-0.7
V
IN
OPENLOAD DETECTION (off state) per each channel
Symbol
Parameter
Status Delay
Test Conditions
Min
Typ
Max
Unit
t
(*)
20
µs
SDL
Openload Voltage
Detection Threshold
V
V =0V
1.5
2.5
3.5
V
OL
IN
Openload Detection Delay
at Turn Off
T
V
=18V (*)
300
µs
DOL
(*) See Figure 1
CC
4/16
VNQ660SP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
TEST LEVELS
III
I
II
IV
Delays and
Test Pulse
Impedance
1
2
-25 V
+25 V
-25 V
+25 V
-4 V
-50 V
+50 V
-50 V
+50 V
-5 V
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
3a
3b
4
ISO T/R
Test Levels Result
7637/1
I
II
C
C
C
C
C
E
III
C
C
C
C
C
E
IV
C
C
C
C
C
E
Test Pulse
1
2
C
C
C
C
C
C
3a
3b
4
5
Class
C
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
E
SWITCHING CHARACTERISTICS
V
LOAD
90%
80%
dV
/dt
OUT (off)
dV
/dt
OUT (on)
10%
t
V
IN
t
d(on)
t
r
t
d(off)
t
5/16
1
VNQ660SP
TRUTH TABLE (per each channel)
CONDITIONS
INPUT
OUTPUT
STATUS
L
H
L
H
H
H
Normal Operation
L
H
H
L
X
X
H
) H
) L
Current Limitation
(T < T
j
TSD
(T > T
j
TSD
L
H
L
L
H
L
Overtemperature
Undervoltage
Overvoltage
L
H
L
L
X
X
L
H
L
L
H
H
L
H
H
H
L
H
Output Voltage > V
OL
OL
L
H
L
H
H
L
Output Current < I
Figure 1: Status timing waveforms
OPENLOAD STATUS TIMING
OVERTEMP STATUS TIMING
V
IN
V
V
IN
V
STAT
STAT
t
t
SDL
t
t
SDL
SDL
DOL
6/16
2
VNQ660SP
Figure 2: Waveforms
NORMAL OPERATION
UNDERVOLTAGE
INPUT
n
LOAD VOLTAGE
n
STATUS
V
V
USDhyst
CC
V
USD
INPUT
n
LOAD VOLTAGE
n
STATUS
n
undefined
OVERVOLTAGE
V
<V
OV
V
>V
OV
CC
CC
V
CC
INPUT
n
LOAD VOLTAGE
n
STATUS
n
OPENLOAD with external pull-up
INPUT
n
LOAD VOLTAGE
n
V
OL
STATUS
n
t
DOL
t
DOL
OVERTEMPERATURE
T
T
TSD
R
T
j
INPUT
n
LOAD CURRENT
n
STATUS
n
7/16
VNQ660SP
APPLICATION SCHEMATIC
+5V
+5V
V
CC1,2
R
prot
STATUS
INPUT1
D
ld
R
prot
OUTPUT1
OUTPUT2
µC
R
prot
INPUT2
R
prot
INPUT3
INPUT4
OUTPUT3
OUTPUT4
R
prot
GND
R
GND
D
V
GND
GND
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
GND PROTECTION NETWORK AGAINST
REVERSE BATTERY
common with the device ground then the R
will
Solution 1: Resistor in the ground line (R
can be used with any type of load.
only). This
GND
GND
produce a shift (I
* R
) in the input thresholds
S(on)max
GND
and the status output values. This shift will vary
depending on how many devices are ON in the case of
The following is an indication on how to dimension the
R
resistor.
GND
1) R
several high side drivers sharing the same R
.
GND
≤ 600mV / (I
).
S(on)max
GND
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
2) R
≥ (−V ) / (-I
)
GND
GND
CC
where -I
is the DC reverse ground pin current and can
GND
be found in the absolute maximum rating section of the
Solution 2: A diode (D
) in the ground line.
GND
device’s datasheet.
A resistor (R
GND
=1kΩ) should be inserted in parallel to
GND
Power Dissipation in R
(when V <0: during reverse
CC
GND
D
if the device will be driving an inductive load.
battery situations) is:
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift ( 600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
2
P = (-V ) /R
D
CC
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
becomes the
S(on)max
8/16
1
VNQ660SP
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
LOAD DUMP PROTECTION
-V
/I
≤ R
≤ (V
-V -V
) / I
CCpeak latchup
prot
OHµC IH GND
IHmax
D
is necessary (Voltage Transient Suppressor) if the
ld
Calculation example:
load dump peak voltage exceeds V max DC rating. The
CC
For V
= - 100V and I
≥ 20mA; V
≥ 4.5V
CCpeak
latchup
OHµC
same applies if the device will be subject to transients on
5kΩ ≤ R
≤ 65kΩ.
the V line that are greater than the ones shown in the
prot
CC
ISO T/R 7637/1 table.
Recommended R
value is 10kΩ.
prot
µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the V line, the control pins will
CC
be pulled negative. ST suggests to insert a resistor (R
)
prot
in line to prevent the µC I/Os pins to latch-up.
9/16
VNQ660SP
High Level Input Current
Off State Output Current
IL(off1) (µA)
Iih (µA)
10
7
9
6
Off state
8
7
6
5
4
3
2
1
0
Vcc=24V
Vout=0V
Vin=3.25V
5
4
3
2
1
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
100
100
125
125
125
150
150
150
175
175
175
Tc (ºC)
Tc (ºC)
Input Clamp Voltage
Input High Level
Vicl (V)
Vih (V)
8
3.6
7.8
3.4
3.2
3
Iin=1mA
7.6
7.4
7.2
7
2.8
2.6
2.4
2.2
2
6.8
6.6
6.4
6.2
6
-50
-25
0
25
50
75
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Tc (ºC)
Input Low Level
Input Hysteresis Voltage
Vil (V)
Vhyst (V)
2.8
2
1.8
1.6
1.4
1.2
1
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
Tc (ºC)
Tc (ºC)
10/16
1
VNQ660SP
ILIM Vs Tcase
Overvoltage Shutdown
Vov (V)
Ilim (A)
54
20
52
50
48
46
44
42
40
38
36
34
17.5
15
12.5
10
7.5
5
2.5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150
175
Tc (ºC)
Tc (ºC)
Turn-on Voltage Slope
Turn-off Voltage Slope
dVout/dt(on) (V/ms)
dVout/dt(off) (V/ms)
500
700
450
600
Vcc=13V
Rl=13Ohm
Vcc=13V
Rl=13Ohm
400
500
350
300
250
200
150
100
50
400
300
200
100
0
0
-50
-25
0
25
50
75
100 125
150
175
-50
-25
0
25
50
75
100 125
150
175
Tc (ºC)
Tc (ºC)
On State Resistance Vs Tcase
On State Resistance Vs VCC
RDS(on) (mOhm)
RDS(on) (mOhm)
100
100
90
90
Iout=1A
Tc=150ºC
Iout=1A
80
80
Vcc=9V; 13V; 18V
70
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
Tc=25ºC
Tc= - 40ºC
-50
-25
0
25
50
75
100 125
150
175
8
9
10 11 12 13 14 15 16 17 18 19 20
Vcc (V)
Tc (ºC)
11/16
1
VNQ660SP
Status Leakage Current
Status Clamp Voltage
Vscl (V)
Ilstat (µA)
8
0.05
7.8
0.045
Istat=1mA
Vstat=5V
7.6
0.04
7.4
7.2
7
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
6.8
6.6
6.4
6.2
6
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150 175
Tc (ºC)
Tc (ºC)
Status Low Output Voltage
Open Load Off State Voltage Detection Threshold
Vstat (V)
Vol (V)
0.6
5
4.5
0.525
Vin=0V
Istat=1.6mA
4
0.45
3.5
3
0.375
0.3
2.5
2
0.225
0.15
0.075
0
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100 125 150 175
Tc (ºC)
Tc (ºC)
12/16
1
VNQ660SP
PowerSO-10™ THERMAL DATA
PowerSO-10™ PC Board
Layout condition of R and Z measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm,
th
th
2
Cu thickness=35µm, Copper areas: from minimum pad lay-out to 8cm ).
Rthj-amb Vs. PCB copper area in open box free air condition
RTHj_amb (°C/W)
55
Tj-Tamb=50°C
50
45
40
35
30
0
2
4
6
8
10
PCB Cu heatsink area (cm^2)
13/16
VNQ660SP
PowerSO-10™ MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
A (*)
A1
B
B (*)
C
C (*)
D
D1
E
E2
E2 (*)
E4
E4 (*)
e
F
F (*)
H
3.35
3.4
3.65
3.6
0.132
0.134
0.000
0.016
0.014
0.013
0.009
0.370
0.291
0.366
0.283
0.287
0.232
0.232
0.144
0.142
0.004
0.024
0.021
0.022
0.0126
0.378
0.300
0.374
300
0.00
0.40
0.37
0.35
0.23
9.40
7.40
9.30
7.20
7.30
5.90
5.90
0.10
0.60
0.53
0.55
0.32
9.60
7.60
9.50
7.60
7.50
6.10
6.30
0.295
0.240
0.248
1.27
0.50
0.050
0.002
1.25
1.20
13.80
13.85
1.35
1.40
14.40
14.35
0.049
0.047
0.543
0.545
0.053
0.055
0.567
0.565
H (*)
h
L
L (*)
α
1.20
0.80
0º
1.80
1.10
8º
0.047
0.031
0º
0.070
0.043
8º
α (*)
2º
8º
2º
8º
(*) Muar only POA P013P
B
0.10
E
A B
10
H
E
E2
E4
1
SEATING
PLANE
DETAIL "A"
e
B
A
C
0.25
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL "A"
α
P095A
14/16
1
1
VNQ660SP
PowerSO-10™ SUGGESTED PAD LAYOUT
TUBE SHIPMENT (no suffix)
14.6 - 14.9
CASABLANCA
MUAR
B
10.8- 11
6.30
C
A
C
A
0.67 - 0.73
B
1
2
3
10
9
0.54 - 0.6
All dimensions are in mm.
Base Q.ty Bulk Q.ty Tube length (± 0.5)
8
9.5
7
4
5
1.27
A
B
C (± 0.1)
0.8
6
Casablanca
Muar
50
50
1000
1000
532
532
10.4 16.4
4.9 17.2
0.8
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
600
600
330
1.5
13
20.2
24.4
60
G (+ 2 / -0)
N (min)
T (max)
30.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
W
P0 (± 0.1)
P
24
4
Tape Hole Spacing
Component Spacing
Hole Diameter
24
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
11.5
6.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
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1
VNQ660SP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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