VNS3NV04D [STMICROELECTRONICS]
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET; “ OMNIFET II ” ：全AUTOPROTECTED功率MOSFET
| 型号： | VNS3NV04D |
| 厂家： | 
ST |
| 描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 文件： | 总14页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNS3NV04D
®
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
R
I
V
clamp
DS(on)
lim
VNS3NV04D 120 mΩ (*)
3.5 A (*)
40 V (*)
(*)Per each device
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
SO-8
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
DESCRIPTION
The VNS3NV04D is a device formed by two
monolithic OMNIFET II chips housed in
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
a
BLOCK DIAGRAM
DRAIN2
DRAIN1
OVERVOLTAGE
CLAMP
OVERVOLTAGE
CLAMP
INPUT2
GATE
CONTROL
INPUT1
GATE
CONTROL
LINEAR
LINEAR
CURRENT
CURRENT
OVER
OVER
LIMITER
LIMITER
TEMPERATURE
TEMPERATURE
SOURCE2
SOURCE1
February 2003
1/14
1
VNS3NV04D
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Internally Clamped
Internally Clamped
+/-20
Unit
V
V
Drain-source Voltage (V =0V)
INn
DSn
V
Input Voltage
Input Current
V
INn
INn
I
mA
Ω
R
Minimum Input Series Impedance
Drain Current
220
IN MINn
I
Internally Limited
-5.5
A
Dn
I
Reverse DC Output Current
A
Rn
V
Electrostatic Discharge (R=1.5KΩ, C=100pF)
Electrostatic Discharge on output pins only (R=330Ω, C=150pF)
4000
V
ESD1
ESD2
V
16500
V
P
Total Dissipation at T =25°C
4
W
°C
°C
°C
tot
c
T
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
Internally limited
Internally limited
-55 to 150
j
T
c
T
stg
CONNECTION DIAGRAM (TOP VIEW)
1
DRAIN 1
DRAIN 1
DRAIN 2
DRAIN 2
SOURCE 1
INPUT 1
8
SOURCE 2
INPUT 2
4
5
CURRENT AND VOLTAGE CONVENTIONS
RIN1
I
I
IN1
D1
INPUT 1
INPUT 2
DRAIN 1
I
RIN2
I
IN2
D2
V
V
IN1
DS1
DRAIN 2
V
IN2
V
SOURCE 1
SOURCE 2
DS1
2/14
1
VNS3NV04D
THERMAL DATA
Symbol
Parameter
Value
30
Unit
°C/W
°C/W
R
Thermal Resistance Junction-lead (per channel)
MAX
thj-lead
thj-amb
R
Thermal Resistance Junction-ambient
MAX
80(*)
2
(*) When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 µm thick) connected to all DRAIN pins of the relative
channel.
ELECTRICAL CHARACTERISTICS (-40°C < Tj < 150°C, unless otherwise specified)
(Per each device)
OFF
Symbol
Parameter
Drain-source Clamp
Voltage
Test Conditions
V =0V; I =1.5A
Min
Typ
Max
Unit
V
40
45
55
V
CLAMP
IN
D
Drain-source Clamp
Threshold Voltage
V
V =0V; I =2mA
36
V
V
CLTH
IN
D
V
Input Threshold Voltage
V
=V ; I =1mA
0.5
2.5
INTH
DS
DS
IN
D
Supply Current from Input
Pin
I
V
=0V; V =5V
100
6.8
150
µA
ISS
IN
Input-Source Clamp
Voltage
I =1mA
6
8
IN
V
V
INCL
I =-1mA
-1.0
-0.3
30
IN
V
V
=13V; V =0V; T =25°C
Zero Input Voltage Drain
DS
DS
IN
j
I
µA
DSS
Current (V =0V)
=25V; V =0V
75
IN
IN
ON
Symbol
Parameter
Test Conditions
V =5V; I =1.5A; T=25°C
Min
Typ
Max
120
240
Unit
Static Drain-source On
Resistance
IN
D
j
R
mΩ
DS(on)
V =5V; I =1.5A
IN
D
3/14
1
VNS3NV04D
ELECTRICAL CHARACTERISTICS (continued) (Tj=25°C, unless otherwise specified)
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
=13V; I =1.5A
Min
Typ
5.0
Max
Unit
S
g
(*)
V
V
fs
DD
D
Transconductance
Output Capacitance
C
=13V; f=1MHz; V =0V
150
pF
OSS
DS
IN
SWITCHING
Symbol
Parameter
Test Conditions
Min
Typ
90
Max
300
750
1350
750
1.35
7.5
Unit
ns
t
t
t
t
Turn-on Delay Time
Rise Time
d(on)
V
V
=15V; I =1.5A
D
DD
t
250
450
250
0.45
2.5
ns
r
=5V; R =R =220Ω
IN MINn
gen
gen
Turn-off Delay Time
Fall Time
ns
d(off)
(see figure 1)
t
ns
f
Turn-on Delay Time
Rise Time
µs
µs
µs
µs
d(on)
V
V
=15V; I =1.5A
D
DD
t
r
=5V; R =2.2KΩ
gen
gen
Turn-off Delay Time
Fall Time
3.3
10.0
6.0
d(off)
(see figure 1)
t
2.0
f
V
V
V
=15V; I =1.5A
D
DD
(dI/dt)
Turn-on Current Slope
Total Input Charge
4.7
8.5
A/µs
on
=5V; R =R =220Ω
IN MINn
gen
gen
=12V; I =1.5A; V =5V
DD
D
IN
Q
nC
i
I
=2.13mA (see figure 5)
gen
SOURCE DRAIN DIODE
Symbol
(*)
Parameter
Test Conditions
Min
Typ
0.8
107
37
Max
Unit
V
V
Forward On Voltage
I
=1.5A; V =0V
SD
SD
SD
IN
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
=1.5A; dI/dt=12A/µs
=30V; L=200µH
ns
µC
A
rr
Q
V
rr
DD
I
0.7
(see test circuit, figure 2)
RRM
PROTECTIONS (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
V =5V; V =13V
Min
Typ
Max
Unit
I
Drain Current Limit
3.5
5
7
A
lim
IN
DS
V =5V; V =13V
Step Response Current
Limit
IN
DS
t
10
µs
dlim
Overtemperature
Shutdown
T
150
175
200
°C
jsh
T
Overtemperature Reset
Fault Sink Current
135
10
°C
jrs
I
V =5V; V =13V; T =T
jsh
15
20
mA
gf
IN
DS
j
starting T =25°C; V =24V
j
DD
Single Pulse
E
V =5V; R =R
=220Ω; L=24mH 100
mJ
as
IN
gen
IN MINn
Avalanche Energy
(see figures 3 & 4)
(*) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
4/14
2
VNS3NV04D
PROTECTION FEATURES
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing the
chip temperature and are not dependent on the
input voltage. The location of the sensing element
on the chip in the power stage area ensures fast,
accurate detection of the junction temperature.
Overtemperature cutout occurs in the range 150 to
190 °C, a typical value being 170 °C. The device is
automatically restarted when the chip temperature
falls of about 15°C below shut-down temperature.
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC to
50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
- STATUS FEEDBACK: in the case of an
overtemperature fault condition (Tj > Tjsh), the
device tries to sink a diagnostic current Igf through
the INPUT pin in order to indicate fault condition. If
driven from a low impedance source, this current
may be used in order to warn the control circuit of
a device shutdown. If the drive impedance is high
enough so that the INPUT pin driver is not able to
supply the current Igf, the INPUT pin will fall to 0V.
This will not however affect the device
operation: no requirement is put on the current
capability of the INPUT pin driver except to be
able to supply the normal operation drive
The device integrates:
-
OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current ID to Ilim whatever the INPUT pin
voltage. When the current limiter is active, the
device operates in the linear region, so power
dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
current IISS
.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
junction
temperature
may
reach
the
overtemperature threshold Tjsh
.
5/14
1
VNS3NV04D
Fig.1: Switching Time Test Circuit for Resistive Load
V
D
R
gen
V
gen
ID
90%
tf
tr
10%
t
td(on)
td(off)
Vgen
t
Fig.2: Test Circuit for Diode Recovery Times
A
A
B
D
I
FAST
DIODE
L=100uH
OMNIFET
S
B
220Ω
D
S
V
DD
R
gen
I
OMNIFET
V
gen
8.5 Ω
6/14
1
VNS3NV04D
Fig. 3: Unclamped Inductive Load Test Circuits
Fig. 4: Unclamped Inductive Waveforms
R
GEN
V
IN
P
W
Fig. 5: Input Charge Test Circuit
V
IN
7/14
1
1
VNS3NV04D
Source-Drain Diode Forward Characteristics
Static Drain Source On Resistance
Vsd (mV)
1100
Rds(on) (mohms)
1000
Tj=-40ºC
1050
900
Vin=0V
Vin=2.5V
1000
800
700
600
500
400
300
200
100
0
950
900
850
800
750
700
650
600
Tj=25ºC
Tj=150ºC
0
1
2
3
4
5
6
7
8
9
10 11 12
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55
Id(A)
Id (A)
Static Drain-Source On resistance Vs. Input
Voltage
Derating Curve
Rds(on) (mohms)
300
275
250
225
200
175
150
125
100
75
Tj=150ºC
Id=3.5A
Id=1A
Tj=25ºC
Tj=-40ºC
Id=3.5A
Id=1A
Id=3.5A
Id=1A
50
25
0
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
Static Drain-Source On resistance Vs. Input
Voltage
Transconductance
Gfs (S)
11
Rds(on) (mohms)
250
10
225
Vds=13V
Tj=-40ºC
Tj=25ºC
9
Id=1.5A
200
8
7
6
5
4
3
2
1
0
175
Tj=150ºC
Tj=150ºC
150
125
100
75
Tj=25ºC
50
Tj=-40ºC
25
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
Id (A)
8/14
1
1
VNS3NV04D
Static Drain-Source On Resistance Vs. Id
Transfer Characteristics
Rds(on) (mohms)
250
Idon (A)
6
225
5.5
Vds=13.5V
Vin=5V
5
200
Tj=150ºC
4.5
175
150
125
4
Tj=150ºC
3.5
3
Tj=25ºC
Tj=-40ºC
100
2.5
2
75
1.5
Tj=25ºC
50
Tj= - 40ºC
1
0.5
0
25
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Id (A)
Vin (V)
Turn On Current Slope
Turn On Current Slope
di/dt(A/usec)
1.75
di/dt(A/us)
5
4.5
4
1.5
1.25
1
Vin=5V
Vdd=15V
Id=1.5A
Vin=3.5V
Vdd=15V
Id=1.5A
3.5
3
2.5
2
0.75
0.5
0.25
0
1.5
1
0.5
0
0
250 500 750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
0
500
1000
1500
2000 2500
2250
250
750
1250
1750
Rg(ohm)
Turn off drain source voltage slope
Input Voltage Vs. Input Charge
dv/dt(V/usec)
300
Vin (V)
9
275
250
225
200
175
150
125
100
75
8
Vin=5V
Vdd=15V
Id=1.5A
Vds=1V
Id=1.5A
7
6
5
4
3
2
1
0
50
25
0
0
500
1000
1500
2000
2500
250
750
1250
1750
2250
0
1
2
3
4
5
6
7
8
9
10
11
Rg(ohm)
Qg (nC)
9/14
1
1
VNS3NV04D
Turn Off Drain-Source Voltage Slope
Capacitance Variations
dv/dt(V/usec)
300
C(pF)
350
275
Vin=3.5V
Vdd=15V
Id=1.5A
250
225
200
175
150
125
100
75
300
250
200
150
100
50
f=1MHz
Vin=0V
50
25
0
0
500
1000
1500
2000
2500
250
750
1250
1750
2250
0
5
10
15
20
25
30
35
Rg(ohm)
Vds(V)
Switching Time Resistive Load
Switching Time Resistive Load
t(usec)
4
t(nsec)
900
800
3.5
td(off)
tr
Vdd=15V
Id=1.5A
Rg=220ohm
Vdd=15V
Id=1.5A
Vin=5V
700
600
500
3
2.5
2
tr
tf
400
1.5
1
td(off)
300
tf
200
td(on)
0.5
0
td(on)
100
0
0
500
1000
1500
2000
2500
250
750
1250
1750
2250
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Rg(ohm)
Vin(V)
Normalized On Resistance Vs. Temperature
Output Characteristics
Id (A)
5
Rds(on) (mOhm)
4
Vin=5V
Vin=4V
4.5
4
3.5
Vin=5V
Id=1.5A
3
3.5
3
Vin=3V
2.5
2
2.5
2
1.5
1
1.5
1
0.5
0
0.5
0
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
175
Vds (V)
Tc )ºC)
10/14
1
1
VNS3NV04D
Normalized Input Threshold Voltage Vs.
Temperature
Normalized
Temperature
Current
Limit
Vs.
Junction
Vinth (V)
Ilim (A)
10
2
1.8
9
8
Vds=Vin
Id=1mA
Vin=5V
Vds=13V
1.6
1.4
7
6
5
4
3
2
1
0
1.2
1
0.8
0.6
0.4
0.2
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Tc (ºC)
Step Response Current Limit
Tdlim(usec)
13
12.5
12
Vin=5V
Rg=220ohm
11.5
11
10.5
10
9.5
9
8.5
8
7.5
5
7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
11/14
1
1
VNS3NV04D
SO-8 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
MIN.
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
A
a1
a2
a3
b
0.1
0.003
0.65
0.35
0.19
0.25
0.025
0.013
0.007
0.010
b1
C
c1
D
45 (typ.)
4.8
5.8
5.0
6.2
0.188
0.228
0.196
0.244
E
e
1.27
3.81
0.050
0.150
e3
F
3.8
0.4
4.0
1.27
0.6
0.14
0.157
0.050
0.023
L
0.015
M
F
8 (max.)
12/14
1
VNS3NV04D
SO-8 TUBE SHIPMENT (no suffix)
B
Base Q.ty
100
2000
532
3.2
6
C
A
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
0.6
All dimensions are in mm.
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
2500
2500
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 (± 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D (± 0.1/-0) 1.5
Hole Diameter
D1 (min)
F (± 0.05)
K (max)
1.5
5.5
4.5
2
Hole Position
Compartment Depth
Hole Spacing
P1 (± 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
13/14
1
VNS3NV04D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
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14/14
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CONNOR-WINFIE
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