W18NB40 [STMICROELECTRONICS]

N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET; N沟道400V - 0.19ohm - 18.4A TO- 247 / ISOWATT218的PowerMESH MOSFET


型号：	W18NB40
厂家：	ST
描述：	N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET N沟道400V - 0.19ohm - 18.4A TO- 247 / ISOWATT218的PowerMESH MOSFET
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STW18NB40

STH18NB40FI

N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218

PowerMesh™ MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STW18NB40

STH18NB40FI

400 V

< 0.26 Ω

18.4 A

12.4 A

■

TYPICAL R (on) = 0.19 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

ISOWATT218

TO-247

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

INTERNAL SCHEMATIC DIAGRAM

nation structure, gives the lowest R

per area,

DS(on)

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STW18NB40

STH18NB40FI

Drain-source Voltage (V = 0)

400

±30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

18.4

11.6

73.6

190

1.52

4.5

12.4

7.8

Drain Current (continuos) at T = 100°C

( )

Drain Current (pulsed)

73.6

Total Dissipation at T = 25°C

TOT

Derating Factor

0.64

4.5

W/°C

V/ns

dv/dt (1)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ISO

2000

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I <18.4A, di/dt<200A/µ, V <V

,TJ<T

(BR)DSS JMAX

June 2002

1/7

STW18NB40/STH18NB40FI

THERMAL DATA

TO-247

ISOWATT218

Rthj-case

Rthj-amb

Rthc-sink

Thermal Resistance Junction-case Max

0.66

1.56

°C/W

°C

Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

0.1

300

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

18.4

(pulse width limited by T max)

Single Pulse Avalanche Energy

450

(starting T = 25 °C, I = I , V = 50 V)

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 250 µA, V = 0

400

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

µA

DSS

Drain Current (V = 0)

= Max Rating, T = 125 °C

Gate-body Leakage

= ±30V

±100

GSS

Current (V = 0)

ON (1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

GS(th)

= V , I = 250 µA

Gate Threshold Voltage

Static Drain-source On

Resistance

= 10V, I = 6.2 A

0.19

0.26

Ω

DS(on)

On State Drain Current

> I

= 10V

x R

DS(on)max,

18.4

D(on)

DYNAMIC

Symbol

Parameter

Test Conditions

x R

DS(on)max,

Min.

Typ.

Max.

Unit

(1)

Forward Transconductance

> I

9.3

D(on)

= 9.2 A

V = 25V, f = 1 MHz, V = 0

DS GS

Input Capacitance

Output Capacitance

2480

435

iss

oss

Reverse Transfer

Capacitance

rss

2/7

STW18NB40/STH18NB40FI

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Turn-on Delay Time

= 200 V, I = 9.2 A

d(on)

= 4.7Ω V = 10 V

Rise Time

(see test circuit, Figure 3)

= 320V, I = 18.4 A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

28.3

SWITCHING OFF

Symbol

Parameter

Off-voltage Rise Time

Fall Time

Test Conditions

Min.

Typ.

Max.

Unit

= 320V, I = 18.4 A,

r(Voff)

= 4.7Ω, V = 10V

(see test circuit, Figure 5)

Cross-over Time

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

18.4

73.6

1.6

Unit

Source-drain Current

(2)

(1)

Source-drain Current (pulsed)

Forward On Voltage

SDM

= 18.4 A, V = 0

= 18.4 A, di/dt = 100A/µs,

= 100V, T = 150°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

480

5.5

µC

RRM

(see test circuit, Figure 5)

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/7

STW18NB40/STH18NB40FI

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/7

STW18NB40/STH18NB40FI

TO-247 MECHANICAL DATA

mm.

inch

DIM.

MIN.

4.85

2.20

0.40

TYP

MAX.

5.15

2.60

0.80

1.40

MIN.

0.19

TYP.

MAX.

0.20

0.10

0.03

0.05

0.08

0.015

0.04

0.11

0.07

2.40

3.40

0.07

0.11

0.09

0.13

10.90

0.43

15.45

19.85

3.70

15.75

20.15

4.30

0.60

0.78

0.14

0.62

0.79

0.17

18.50

0.72

14.20

14.80

0.56

0.07

0.14

0.58

0.11

34.60

5.50

1.36

0.21

5º

60º

Dia

3.55

3.65

0.143

5/7

STW18NB40/STH18NB40FI

ISOWATT218 MECHANICAL DATA

inch

DIM.

MIN.

5.35

3.30

2.90

1.88

0.75

1.05

1.50

1.90

10.80

15.80

TYP.

MAX.

5.65

3.80

3.10

2.08

0.95

1.25

1.70

2.10

11.20

16.20

MIN.

0.211

0.130

0.114

0.074

0.030

0.041

0.059

0.075

0.425

0.622

TYP.

MAX.

0.222

0.150

0.122

0.082

0.037

0.049

0.067

0.083

0.441

0.638

0.354

20.80

19.10

22.80

40.50

4.85

21.20

19.90

23.60

42.50

5.25

0.819

0.752

0.898

1.594

0.191

0.797

0.083

0.835

0.783

0.929

1.673

0.207

0.817

0.091

20.25

2.1

20.75

2.3

4.6

0.181

DIA

3.5

3.7

0.138

0.146

- Weight : 4.9 g (typ.)

- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm

- The side of the dissipator must be flat within 80 µm

P025C/A

6/7

STW18NB40/STH18NB40FI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the

consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from

its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications

mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information

previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or

systems without express written approval of STMicroelectronics.

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7/7

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