XL0840 [STMICROELECTRONICS]
SENSITIVE GATE 0.8A SCRs; 敏感GATE 0.8A可控硅
| 型号： | XL0840 |
| 厂家： | 
ST |
| 描述： | SENSITIVE GATE 0.8A SCRs |
| 文件： | 总5页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
XL0840
SENSITIVE GATE 0.8A SCRs
A
MAIN FEATURES
Symbol
IT(RMS)
Value
0.8
Unit
A
G
VDRM
400
V
K
IGT
200
µA
DESCRIPTION
Thanks to its highly sensitive triggering levels, the
XL0840 device is suitable for all high volumes appli-
cations where the available gate current is limited,
such as Christmas lights control.
K
G
A
TO-92
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
Parameter
Value
0.8
0.5
8
Unit
A
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
TI = 55°C
TI = 55°C
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
A
Tj = 25°C
tp = 10 ms
tp = 10 ms
F = 60 Hz
7
I2t
I2t Value for fusing
Tj = 25°C
0.24
30
A2s
dI/dt
Critical rate of rise of on-state current
Tj = 125°C
A/µs
IG = 2 x IGT, tr ≤ 100ns
IGM
Peak gate current
tp = 20µs
Tj = 125°C
Tj = 125°C
1
A
PG(AV)
Average gate power dissipation
0.1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150 °C
- 40 to + 125
January 2002 - Ed: 1A
1/5
XL0840
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
IGT
Test Conditions
XL0840
200
0.8
0.1
8
Unit
µA
V
VD=12V RL=140Ω
MAX.
MAX.
MIN.
VGT
VGD
VRG
IH
VD=VDRM RL=3.3kΩ RGK = 1kΩ
IRG = 10µA
Tj = 125°C
V
MIN.
V
IT= 50mA RGK = 1kΩ
IG = 1mA RGK = 1kΩ
VD=67% VDRM RGK = 1kΩ
ITM = 1.6A tp = 380µs
Threshold voltage
MAX.
MAX.
MIN.
5
mA
mA
V/µs
V
IL
6
dV/dt
VTM
VTO
Rd
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
75
MAX.
MAX.
MAX.
MAX.
1.95
1.0
600
1
V
Dynamic resistance
VDRM RGK = 1kΩ
mΩ
µA
IDRM
100
THERMAL RESISTANCES
Symbol
Parameter
Value
150
80
Unit
Rth(j-a)
Rth(j-l)
Junction to ambient (DC)
Junction to lead (DC)
°C/W
°C/W
PRODUCT SELECTOR
Part Number
Voltage
Sensitivity
200 µA
Package
TO-92
XL0840
400V
ORDERING INFORMATION
X L 08 40
SENSITIVE SCR
LIGHT CONTROL
VOLTAGE:
40: 400V
CURRENT:0.8A
OTHER INFORMATION
Part Number
Marking
Weight
Base quantity
2500
Packing mode
Bulk
XL0840
XL0840
0.2 g
2/5
XL0840
Fig. 1: Maximum average power dissipation ver-
sus average on-state current.
Fig. 2-1: Average and D.C. on-state current ver-
sus lead temperature.
P(W)
1.0
IT(av)(A)
0.9
α=180°
D.C.
0.9
0.8
0.8
0.7
0.6
0.5
0.4
0.7
0.6
α=180°
0.5
0.4
0.3
0.2
0.3
180°
α
0.2
0.1
0.0
α
0.1
Tlead(°C)
IT(av)(A)
0.25
0.0
0
25
50
75
100
125
0.00
0.05
0.10
0.15
0.20
0.30
0.35
0.40
0.45
0.50
Fig. 2-2: Average and D.C. on-state current ver-
sus ambient temperature (device mounted on FR4
with recommended pad layout).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.E+00
IT(av)(A)
0.7
D.C.
0.6
0.5
α=180°
0.4
0.3
0.2
1.E-01
0.1
Tamb(°C)
tp(s)
0.0
1.E-02
0
25
50
75
100
125
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
Fig. 5: Relative variation of holding current versus
gate-cathode resistance (typical values).
IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25°C]
5.0
IH [Rgk] / IH [Rgk=1kΩ]
11
Tj=25°C
4.5
4.0
3.5
10
9
8
7
6
5
4
3
2
IGT
3.0
2.5
2.0
1.5
IH & IL
1.0
(Rgk=1kW)
0.5
1
Tj(°C)
Rgk(kΩ)
0.0
0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0.01
0.10
1.00
10.00
3/5
XL0840
Fig. 6: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values).
Fig. 7: Relative variation of dV/dt immunity versus
gate-cathode capacitance (typical values).
dV/dt [Rgk] / dV/dt [Rgk=1kΩ]
dV/dt [Cgk] / dV/dt [Rgk=1kΩ]
5
10
Tj=125°C
VD=270V
Tj=125°C
VD=270V
Rgk=1kW
9
4
3
2
1
8
7
6
5
4
3
2
1
Cgk(nF)
Rgk(kΩ)
0
0
0.10
1.00
10.00
1.00
10.00
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and cor-
responding value of I2t.
Fig. 8: Surge peak on-state current versus number
of cycles.
ITSM(A), I2t (A2s)
100.0
ITSM(A)
8
Tj initial=25°C
ITSM
7
tp=10ms
Non repetitive
6
Tj initial=25°C
10.0
1.0
5
4
3
Repetitive
Tlead=50°C
2
I²t
1
tp(ms)
Number of cycles
0
0.1
1
10
100
1000
0.01
0.10
1.00
10.00
Fig. 10: On-state characteristics (maximum val-
ues).
ITM(A)
10.00
1.00
Tj=125°C
Tj=25°C
0.10
Tj max. :
Vto = 1.00 V
VTM(V)
3
Rd = 600 mΩ
0.01
0
1
2
4
5
6
4/5
XL0840
PACKAGE MECHANICAL DATA
TO-92
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A
B
C
D
E
F
a
1.35
0.053
a
4.70
0.185
B
C
2.54
0.100
4.40
0.173
0.500
F
D
E
12.70
3.70
0.50
0.146
0.019
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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5/5
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