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Z0402MF-0AA2 [STMICROELECTRONICS]

4A TRIACS; 双向可控硅4A
Z0402MF-0AA2
型号： Z0402MF-0AA2
厂家： ST    ST
描述：

4A TRIACS
双向可控硅4A

可控硅 三端双向交流开关
文件： 总6页 (文件大小：58K)
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Z04 Series  
®
STANDARD  
4A TRIACS  
MAIN FEATURES:  
Symbol  
A2  
Value  
4
Unit  
A
G
I
T(RMS)  
A1  
V
/V  
600 to 800  
V
DRM RRM  
I
3 to 25  
mA  
GT (Q )  
1
A1  
A2  
G
DESCRIPTION  
The Z04 series is suitable for general purpose AC  
switching applications. They can be found in  
applications such as touch light dimmers, fan  
controllers, HID lamp ignitors,...  
TO202-3  
(Z04xxF)  
Different gate current sensitivities are available,  
allowing optimized performances when controlled  
directly from microcontrollers.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
RMS on-state current (full sine wave)  
Value  
Unit  
I
TI = 30°C  
Tamb = 25°C  
t = 20 ms  
4
1
A
T(RMS)  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
F = 50 Hz  
F = 60 Hz  
20  
21  
A
TSM  
t = 16.7 ms  
²
²
²
tp = 10 ms  
2.2  
A s  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
20  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
1.2  
0.2  
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
July 2003 - Ed: 5  
1/6  
Z04 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Quadrant  
Z04xx  
Unit  
02  
05  
09  
10  
I
(1)  
mA  
ALL  
ALL  
ALL  
MAX.  
MAX.  
MIN.  
3
5
10  
25  
GT  
V
V
V
= 12 V  
R = 30 Ω  
D
L
1.3  
V
V
GT  
V
0.2  
= V  
R = 3.3 kΩ Tj = 125°C  
GD  
D
DRM  
L
I
(2)  
I = 50 mA  
MAX.  
MAX.  
3
6
5
10  
15  
25  
100  
2
25  
25  
50  
200  
5
mA  
mA  
H
T
I
I
= 1.2 I  
I - III - IV  
II  
10  
15  
20  
1
G
GT  
L
12  
10  
0.5  
dV/dt (2)  
V
= 67 %V  
gate open Tj = 110°C  
Tj = 110°C  
MIN.  
MIN.  
V/µs  
V/µs  
D
DRM  
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
Value  
Unit  
V
(2)  
(2)  
I
= 5.5 A  
tp = 380 µs  
Tj = 25°C  
MAX.  
2.0  
0.95  
180  
5
V
V
TM  
TM  
V
Threshold voltage  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MAX.  
MAX.  
to  
R (2)  
Dynamic resistance  
mΩ  
µA  
mA  
d
I
I
V
= V  
DRM  
RRM  
DRM RRM  
MAX.  
0.5  
Note 1: minimum IGT is guaranted at 5% of IGT max.  
Note 2: for both polarities of A2 referenced to A1  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
°C/W  
°C/W  
R
Junction to lead (AC)  
Junction to ambient  
15  
th(j-l)  
R
100  
th(j-a)  
2/6  
Z04 Series  
PRODUCT SELECTOR  
Part Number  
Voltage  
Sensitivity  
Type  
Package  
600 V 700 V 800 V  
Z0402MF  
Z0402SF  
Z0402NF  
Z0405MF  
Z0405SF  
Z0405NF  
Z0409MF  
Z0409SF  
Z0409NF  
Z0410MF  
Z0410SF  
Z0410NF  
X
X
X
X
X
X
X
X
X
X
X
X
3 mA  
3 mA  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
Standard  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
TO202-3  
3 mA  
5 mA  
5 mA  
5 mA  
10 mA  
10 mA  
10 mA  
25 mA  
25 mA  
25 mA  
ORDERING INFORMATION  
Blank  
Z 04 02 M F  
0AA2  
TRIAC  
SERIES  
PACKING MODE:  
0AA2:Tube  
VOLTAGE:  
PACKAGE:  
F:TO202-3  
1AA2: Bulk  
CURRENT: 4A  
M: 600V  
S: 700V  
N: 800V  
SENSITIVITY:  
02: 3mA  
05: 5mA  
09: 10mA  
10: 25mA  
OTHER INFORMATION  
Part Number  
Base  
quantity  
Packing  
mode  
Marking  
Weight  
Z04xxyF 0AA2  
Z04xxyF 1AA2  
Z04xxyF  
Z04xxyF  
0.8 g  
0.8 g  
50  
Tube  
Bulk  
250  
Note: xx = sensitivity, y = voltage  
3/6  
Z04 Series  
Fig. 1: Maximum power dissipation versus RMS  
Fig. 2: RMS on-state current versus ambient  
on-state current (full cycle).  
temperature (full cycle).  
P(W)  
IT(RMS)(A)  
7
4.5  
Rth(j-a)=Rth(j-l)  
4.0  
3.5  
3.0  
2.5  
2.0  
6
5
4
3
2
1.5  
Rth(j-a)=100°C/W  
1.0  
1
0.5  
IT(RMS)(A)  
Tamb(°C)  
0.0  
0
0
25  
50  
75  
100  
125  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]  
K=[Zth(j-a)/Rth(j-a)]  
2.5  
1E+0  
IGT  
2.0  
1E-1  
1E-2  
1.5  
IH & IL  
1.0  
0.5  
Tj(°C)  
40 60  
tp(s)  
1E-3  
0.0  
-40 -20  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
20  
80 100 120 140  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
a
tp < 10ms, and corresponding value of I²t.  
ITSM (A), I²t (A²s)  
ITSM(A)  
500  
25  
Tj initial=25°C  
t=20ms  
20  
100  
10  
1
dI/dt limitation:  
20A/µs  
One cycle  
ITSM  
Non repetitive  
Tj initial=25°C  
15  
Repetitive  
Tamb=25°C  
10  
I²t  
5
tp (ms)  
Number of cycles  
0
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
4/6  
Z04 Series  
Fig. 7: On-state characteristics (maximum  
values).  
Fig. 8: Relative variation of critical rate of  
decrease of main current versus (dV/dt)c (typical  
values).  
ITM(A)  
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
20.0  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
10.0  
Tj=Tj max.  
Z0410  
1.4  
1.2  
1.0  
1.0  
Tj=25°C  
0.8  
Z0409  
Z0402  
0.6  
Tj max.  
Vto= 0.95 V  
Rd= 180 mW  
Z0405  
0.4  
VTM(V)  
0.2  
0.0  
(dV/dt)c (V/µs)  
0.1  
0.1  
1.0  
10.0  
100.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Fig. 9: Relative variation of critical rate of  
decrease of main current versus junction  
temperature.  
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]  
6
5
4
3
2
1
Tj (°C)  
0
0
25  
50  
75  
100  
125  
5/6  
Z04 Series  
PACKAGE MECHANICAL DATA  
TO202-3 (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
A
REF.  
Inches  
C
A
C
D
F
10.1  
0.398  
7.3  
0.287  
0.413  
10.5  
O
1.5  
0.059  
F
J
D
H
J
0.51  
1.5  
0.020  
0.059  
0.177  
P
H
M
N
N1  
O
P
4.5  
5.3  
0.209  
N1  
2.54  
0.100  
1.4  
0.7  
0.055  
0.028  
N
M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A  
http://www.st.com  
6/6  

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