10N65F [SUNMATE]

N-CHANNEL POWER MOSFET;


型号：	10N65F
厂家：	SUNMATE electronic Co., LTD
描述：	N-CHANNEL POWER MOSFET
文件：	总8页 (文件大小：2367K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

10N65 Series

N-CHANNEL POWER MOSFET

Features

Pin Definition:

R_DS(ON)<1Ω @ V_GS=10V

●

1. Gate

2. Drain

3. Source

Fast switching capability

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Mechanical Data

●

Case: TO-220,ITO-220 Package

Block Diagram

Ordering Information

Package

Part No.

10N65T

10N65F

10N65K

10N65G

Packing

TO-220

ITO-220

TO-262

TO-263

50pcs / Tube

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

PARAMETER

SYMBOL

RATINGS

650

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±30

I_D

Continuous Drain Current

I_DM

Pulsed Drain Current (Note 2)

Single Pulsed (Note 3)

608

156

Avalanche Energy

Power Dissipation

E_AS

TO-220/TO-262/TO-263

P_D

ITO-220

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 30mH, I_AS= 6.2A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATING

62.5

UNIT

°C/W

TO-220/ITO-220

TO-262/TO-263

Junction to Ambient

Junction to Case

TO-220

0.85

θ_JC

°C/W

ITO-220

2.6

ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Drain-Source Breakdown Voltage

BV_DSS

I_DSS

V_GS=0V, I_D=250μA

V_DS=650V, V_GS=0V

650

µA

Drain-Source Leakage Current

Gate- Source Leakage Current

Forward

Reverse

V_G=30V, V_DS=0V

100 nA

-100 nA

I_GSS

V_GS=-30V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250μA

_VGS=10V, I_D=5A

2.0

4.0

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

0.88 1.0

Ω

C_ISS

C_OSS

C_RSS

1200

166

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0 MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

V_DD=325V, I_D=10A,

R_G=25Ω (Note 1, 2)

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

V_DS=520V, I_D=10A,

V_GS=10V (Note 1, 2)

Gate-Source Charge

Q_GS

Q_GD

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

V_GS=0 V, I_S=10A

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_rr

570

4.7

V_GS=0V, I_S=10A,

dI_F/dt =100 A/μs (Note 1)

Reverse Recovery Charge

Q_RR

μC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

TEST CIRCUITS AND WAVEFORMS

D.U.T.

V_DS

R_G

Driver

V_DD

* dv/dt controlled by R_G

_SDcontrolled by pulse period

Same Type

as D.U.T.

V_GS

* D.U.T.-D vice Under Test

Peak Diode Recovery dv/dt Test Circuit

P. W.

Period

V_GS

(Driver)

Period

P.W.

10V

V_GS

I_FM, Body Diode Forward Current

I_SD

(D.U.T.)

di/dt

I_RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V_DS

V_DD

(D.U.T.)

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS(Cont.)

V_DS

90%

10%

V_GS

t_D(ON)

t_D(OFF)

t_F

t_R

Switching Test Circuit

Switching Waveforms

V_GS

Q_G

10V

Q_GS

Q_GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV_DSS

I_AS

I_D(t)

V_DS(t)

V_DD

Time

t_p

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

TYPICAL CHARACTERISTICS

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Source-Drain Diode Forward Voltage

Capacitance vs. Drain-Source Voltage

Gate Charge

TYPICAL CHARACTERISTICS

On-Resistance vs. Junction Temperature

BV_DSSvs. Junction Temperature

Threshold Voltage Variation with Temperature

Maximum Safe Operating Area

TO-220 Mechanical Drawing

ITO-220 Mechanical Drawing

TO-262 Mechanical Drawing

TO-263 Mechanical Drawing

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