BYV28-100 [SUNMATE]
3.5A plug-in fast recovery diode 100V DO-201 series;
| 型号： | BYV28-100 |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 3.5A plug-in fast recovery diode 100V DO-201 series 二极管 |
| 文件： | 总2页 (文件大小：578K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYV28-50 - BYV28-600
SUPER FAST RECTIFIER DIODES
VOLTAGE RANGE: 50 -600 V
CURRENT: 3.5 - 3.0 A
Features
Low cost
!
!
!
!
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
A
B
A
!
!
C
Mechanical Data
D
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
DO-201AD
Min
Dim
A
Max
¾
25.40
7.20
B
9.50
1.30
5.30
C
1.20
! Marking: Type Number
D
4.80
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
BYV28
-100
BYV28
-50
BYV28 BYV28 BYV28 BYV28 BYV28
Symbol
Unit
Characteristic
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
150
105
150
200
140
200
300
210
300
600
420
600
V
V
V
VRRM
VRMS
VDC
400
280
400
Maximum DC blocking voltage
100
Maximum average forw ard rectified current
3.5
3.0
A
IF(AV)
9.5mm lead length,
@TA=75
Peak forw ard surge current
10ms single half-sine-w ave
90.0
5.0
A
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ IF=IF(AV)
1.02
1.05
VF
IR
1.25
V
A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Maximum reverse recovery time (Note1)
100.0
25
50
ns
pF
/W
trr
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
100
75
CJ
Rθ
JA
Operating junction temperature range
- 55 ----- + 150
- 55 ----- + 150
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2
www.sunmate.tw
Ratings AND Charactieristic Curves
BYV28-50--BYV28-600
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N
10
N
trr
1.
1.
+0.5A
D.U.T.
0
(+)
25VDC
(approx)
(-)
PULSE
GENERATOR
(NOTE2)
-0.25A
OSCILLOSCOPE
(NOTE 1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR10 ns/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISETIME =10ns MAX.SOURCE IMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
4.0
BYV28-50
-
BYV28-200
Single Phase
Half Wave 60H
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
40
Z
3.5
20
10
BYV28-600
3.0
2.5
4.0
2.0
1.0
BYV28-300
- BYV28-400
BYV28-600
BYV28-50 - BYV28-400
2.0
1.5
1.0
0.4
TJ=25
Pulse W idth=300µs
0.2
0.1
0
50
100
150
200
250
0.8
1.0 1.2 1.4 1.6 1.8
2.0
0.6
AMBIENT TEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
FIG.5-- PEAK FORWORD SURGE CURRENT
100
1000
400
90
8.3ms Single Half
Sine-Wave
80
200
100
70
60
40
50
40
TJ=25
f=1.0MHz
20
1
2
5
10
20
50 100
10
0.1 0.2 0.4
1
2
4
10 20 40
100
NUMBER OF CYCLES AT 60H
REVERSE VOLTAGE, VOLTS
Z
2 of 2
www.sunmate.tw
相关型号：
BYV28-100-E3/54
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
VISHAY
BYV28-100-TAP
DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY
BYV28-100-TR
DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
VISHAY
BYV28-100/20113
DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
NXP
BYV28-100/20133
DIODE 3.5 A, 100 V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Rectifier Diode
NXP
©2020 ICPDF网 联系我们和版权申明