EDZ8.2B [SUNMATE]
1W patch zener diode SOD-523 8.2V series;
| 型号： | EDZ8.2B |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1W patch zener diode SOD-523 8.2V series 二极管 测试 光电二极管 |
| 文件： | 总2页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8550SL
Genral Purpose Transistors NPN silicon
Mechanical Data
SOT-23
A
Dim
Min
Max
·
·
Case: SOT-23, Molded Plastic
A
B
C
D
E
G
H
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams
B
C
·
·
TOP VIEW
D
G
E
Approx. Weight: 0.008 grams
H
K
M
J
K
L
L
M
a
All Dimensions in mm
THERMALCHARACTERISTICS
Symbol
Unit
Max
Characteristic
Total Device Dissipation FR- 5 Board (1)
T A = 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
225
1.8
mW
PD
RθJA
PD
mW /°C
556
°C/W
300
2.4
mW
Alumina Substrate, (2) T A = 25 °C
Derate above 25 °C
mW /°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
417
T
, T stg
-55 to +150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
(I C =-1.0mA)
V (BR)CEO
V (BR)EBO
V (BR)CBO
-25
-5
-40
–
–
–
–
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
(I E = -100 µA)
Collector-Base Breakdown voltage
(I C= -100 µA)
Collector Cutoff Current
(VCB = -35 V)
–
V
I
-150
-150
nA
nA
CBO
Emitter Cutoff Current
(VEB = -4V)
I EBO
–
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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