EGP10B [SUNMATE]

1A plug-in fast recovery diode 100V DO-41 series;


型号：	EGP10B
厂家：	SUNMATE electronic Co., LTD
描述：	1A plug-in fast recovery diode 100V DO-41 series 二极管
文件：	总2页 (文件大小：255K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

EGP10A - EGP10M

GLASS PASSIVATED FAST EFFICIENT RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Diffused Junction

Ultra-Fast Switching for High Efficiency

High Current Capability and Low Forward

Voltage Drop

Low Reverse Leakage Current

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

Case: DO-41Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Marking: Type Number

Weight: 0.35 grams (approx.)

Mounting Position: Any

DO-41

Min

Dim

Max

25.40

4.06

5.21

0.864

2.72

0.71

2.00

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

For capacitive load, derate current by 20%.

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

EGP

10A

EGP EGP EGP

EGP EGP

10K 10M

Characteristic

Symbol

Unit

10B

10D

10F

10G

10J

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

200

300

400

600

800

560

1000

700

R(RMS)

RMS Reverse Voltage

140

210

280

420

Average Rectified Output Current

(Note 1)

1.0

@T_A= 55°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

Forward Voltage

@I_F= 1.0A

1.0

1.3

1.7

Peak Reverse Current

@T_A= 25°C

5.0

100

µA

At Rated DC Blocking Voltage @T_A= 100°C

Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Operating Temperature Range

°C

-65 to +125

-65 to +150

STG

Storage Temperature Range

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.

3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

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RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M

FIG. 1- FORWARD CURRENT DERATING CURVE

FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

1.0

0.8

0.6

0.4

0.2

Single Phase

Half Wave 60Hz

Resistive or

inductive Load

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

100

125

150

175

5.0

100

AMBIENT TEMPERATURE, C

NUMBER OF CYCLES AT 60 Hz

FIG. 3-TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4-TYPICAL REVERSE CHARACTERISTICS

1,000

100

TJ=25 C

PULSE WIDTH=300 ms

1%DUTY CYCLE

TJ=100 C

0.1

EGP10A-EGP10D

EGP10F-EGP10G

EGP10J-EGP10M

TJ=25 C

0.1

0.01

0.2

0.6

1.0

1.4

1.8 2.0

100

INSTANTANEOUS FORWARD VOLEAGE,

VOLTS

PERCENT OF PEAK REVERSE VOLTAGE,%

FIG. 5-TYPICAL JUNCTION CAPACITANCE

FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE

200

100

TJ=25 C

EGP10A-EGP10G

EGP10J-EGP10M

0.1

0.01

0.1

100

0.1

1.0

100

REVERSE VOLTAGE,VOLTS

t,PULSE DURATION,sec.

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