RS1DL [SUNMATE]
1.0A patch fast recovery diode 200V SOD-123 series;
| 型号： | RS1DL |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1.0A patch fast recovery diode 200V SOD-123 series |
| 文件： | 总2页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
RS1DT/R
1A, 200V, SILICON, SIGNAL DIODE, DO-214AC, PLASTIC, SMA, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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NXP
RS1DTR
DIODE GEN PURP 200V 1A SMAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ETC
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SURFACE MOUNT FAST RECOVERY RECTIFIERWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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Rectifier Diode,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, LEAD FREE, DO-214ACWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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FAIRCHILD
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场效应晶体管MOSFET。通过采用微小工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有可实现小型、高功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E130GNTB
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场效应晶体管MOSFET。通过采用微小工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有可实现小型、高功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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RS1E170GN
场效应晶体管MOSFET。通过采用微小工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有可实现小型、高功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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RS1E170GNTB
Power Field-Effect Transistor, 17A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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RS1E180BN
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ROHM
RS1E200BN
RS1E200BN是适用于小型大功率封装的开关用途的中功率MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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RS1E200GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E220AT
RS1E220AT is a power MOSFET, suitable for swithing applications.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E240BN
RS1E240BN是低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E240BNTB
Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E240GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
RS1E280BN
RS1E280BN是低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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RS1E280GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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ROHM
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