S10M [SUNMATE]
10.0A patch rectifier diode 1000V SMC series;
| 型号： | S10M |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 10.0A patch rectifier diode 1000V SMC series |
| 文件： | 总3页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S10A - S10M
SURFACE MOUNT RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 10 A
Features
!
Glass Passivated Die Construction
!
!
!
!
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
SMC/DO-214AB
B
Dim
A
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
Mechanical Data
B
!
!
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
A
J
C
C
D
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
E
D
!
!
!
G
H
Weight: 0.21 grams (approx.)
J
G
H
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol S10A
S10B
S10D
S10G
S10J
S10K S10M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
10
V
A
Average Rectified Output Current
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
200
1.2
A
Forward Voltage
@IF = 10A
VFM
IRM
Cj
V
µA
pF
Peak Reverse Current
@TA = 25°C
10
100
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
60
10
Typical Thermal Resistance Junction to Ambient
RꢀJA
°C/W
Operating Temperature Range
Storage Temperature Range
Tj
-50 to +150
-50 to +150
°C
°C
TSTG
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1 of 3
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RATINGS AND CHARACTERISTIC CURVES S10A THRU S10M
Figure 1
Typical Forward Characteristics
100
60
40
20
10
6
4
2
Figure 2
Forward Derating Curve
12
10
8
25ꢀC
1
.6
.4
Amps
.2
6
.1
.06
.04
Amps
4
2
Single Phase, Half Wave
.02
.01
60Hz Resistive or Inductive Load
0
.5
.7
.9
1.1
1.7
1.3
1.5
60
80
100
120
140
160
40
Volts
ꢀC
Average Forward Rectified Current - Amperes versus
Case Temperature - ꢀC
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
1000
600
400
200
TJ=25ꢀC
pF
100
60
40
20
10
.1
.2
.4
1
2
10
20
200 400
1000
4
40
100
Volts
Junction Capacitance - pF versus
Reverse Voltage - Volts
2 of 3
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RATINGS AND CHARACTERISTIC CURVES S10A THRU S10M
Figure 4
Typical Reverse Characteristics
1000
600
400
Figure 5
Peak Forward Surge Current
300
200
250
100
60
200
150
100
40
20
Amps
50
0
10
6
ꢀAmps
80
100
1
6
60
4
8 10 20
Cycles
40
2
4
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
2
1
.6
.4
TA=25ꢁC
.2
.1
20
40
60
80
Volts
140
100
120
Instantaneous Reverse Leakage Current - MicroAmperes versus
Percent Of Rated Peak Reverse Voltage - Volts
3 of 3
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相关型号：
S10M-TP-HF
Rectifier Diode, 1 Phase, 1 Element, 10A, 1000V V(RRM), Silicon, DO-214AB, HSMC, 2 PIN
MCC
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