SMF304B [SUNMATE]

3A patch fast recovery diode 400V SMB series;
SMF304B
型号: SMF304B
厂家: SUNMATE electronic Co., LTD    SUNMATE electronic Co., LTD
描述:

3A patch fast recovery diode 400V SMB series

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SMF301B - SMF307B  
SURFACE MOUNT FAST RECOVERY RECTIFIER DIODES  
VOLTAGE RANGE: 50-1000 V  
CURRENT: 3.0 A  
Features  
Glass Passivated Die Construction  
Fast Recovery Time for High Efficiency  
Low Forward Voltage Drop and High Current  
Capability  
!
!
!
Ideally Suited for Automatic Assembly  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
!
!
B
SMB(DO-214AA)  
!
Dim  
A
Min  
3.30  
4.06  
1.91  
0.15  
5.00  
0.10  
0.76  
2.00  
Max  
3.94  
4.70  
2.21  
0.31  
5.59  
0.20  
1.52  
2.62  
A
J
C
Mechanical Data  
B
!
!
Case: SMB/DO-214AA, Molded Plastic  
Terminals: Solder Plated, Solderable  
per MIL-STD-750, Method 2026  
C
D
D
E
!
!
!
Polarity: Cathode Band or Cathode Notch  
Marking: Type Number  
G
H
Weight: 0.093 grams (approx.)  
G
H
J
E
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified  
For capacitive load, derate current by 20%.  
Single phase, half wave, 60Hz, resistive or inductive load.  
SMF301B SMF302B SMF303B SMF304B SMF305B SMF306B SMF307B  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
280  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
= 75C  
@ TT  
3.0  
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
IFSM  
8.3ms Single half sine-wave Superimposed on Rated Load  
(JEDEC Method)  
100  
A
V
Forward Voltage  
@ I  
F = 3.0A  
25C  
VFM  
IRM  
trr  
1.3  
5.0  
250  
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA =  
A  
@ TA = 125C  
150  
250  
500  
ns  
Maximum Recovery Time (Note 3)  
Cj  
Typical Junction Capacitance (Note 2)  
50  
25  
pF  
RJT  
Typical Thermal Resistance Junction to Terminal (Note 1)  
Operating and Storage Temperature Range  
K/W  
Tj, TSTG  
-65 to +150  
C  
Notes:  
1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.  
1 of 2  
www.sunmate.tw  
3.0  
2.5  
10  
1.0  
2.0  
1.5  
1.0  
0.5  
0
0.1  
Tj = 25°C  
IF Pulse Width: 300 µs  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
0.4  
0.8  
1.2  
1.6  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
TT, TERMINAL TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
1000  
Single Half-Sine-Wave  
(JEDEC Method)  
100  
Tj = 125°C  
100  
10  
80  
60  
40  
Tj = 25°C  
1.0  
0.1  
20  
0
1
10  
100  
0
20  
40  
60  
80 100  
120 140  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Forward Surge Current Derating Curve  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 4 Typical Reverse Characteristics  
trr  
50NI (Non-inductive)  
10NI  
+0.5A  
Device  
Under  
Test  
(-)  
(+)  
(-)  
Pulse  
Generator  
(Note 2)  
50V DC  
Approx  
0A  
-0.25A  
1.0Ω  
NI  
(+)  
Oscilloscope  
(Note 1)  
Notes:  
1. Rise Time = 7.0ns max. Input Impedance = 1.0M, 22pF.  
2. Rise Time = 10ns max. Input Impedance = 50.  
-1.0A  
Set time base for 50/100 ns/cm  
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit  
2 of 2  
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