SS110B [SUNMATE]
1A Patch Schottky diode 100V SMB series;
| 型号： | SS110B |
| 厂家： | 
SUNMATE electronic Co., LTD |
| 描述： | 1A Patch Schottky diode 100V SMB series |
| 文件： | 总2页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12B - SS110B
SURFACE MOUNT SCHOTTKY BARRIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 1.0 A
Features
!
!
Schottky Barrier Chip
Ideally Suited for Automatic Assembly
!
Low Power Loss, High Efficiency
!
!
!
For Use in Low Voltage Application
Guard Ring Die Construction
Plastic Case Material has UL Flammability
B
SMB(DO-214AA)
Classification Rating 94V-O
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Dim
Min
3.30
4.06
1.91
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.70
2.21
0.31
5.59
0.20
1.52
2.62
Mechanical Data
A
B
C
D
E
G
H
J
A
C
!
!
Case: SMB/DO-214AA, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
D
!
!
!
J
Weight: 0.093 grams (approx.)
G
H
All Dimensions in mm
E
Maximum Ratings and Electrical Characteristics
TA = 25ꢀC unless otherwise specified
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
SS18B SS110B
Characteristic
SS12B SS13B SS14B SS15B SS16B
Unit
Symbol
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
VRRM
VRMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL(see fig.1)
VDC
I(AV)
1.0
A
A
Peak forward surge current
IFSM
VF
40.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
0.45
0.55
0.70
0.85
Maximum instantaneous forward voltage at 1.0A
V
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
0.5
mA
IR
TA=100 C
6.0
5.0
90
pF
°C/W
°C
Typical junction capacitance (NOTE 1)
CJ
110
JA
Rꢀ
Typical thermal resistance (NOTE 2)
Operating junction temperature range
88.0
-65 to +150
-65 to +150
-65 to +125
TJ,
Storage temperature range
°C
TSTG
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
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1 of 2
RATINGS AND CHARACTERISTIC CURVES SS12B THRU SS110B
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
40
32
24
16
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
SS12B-SS14B
SS15B-SS110B
8
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
50
1,000
100
10
TJ=25 C
10.0
TJ=100 C
TJ=75 C
1
1
0.1
0.01
SS12B-SS14B
SS15B-SS16B
SS18B-SS110B
0.1
TJ=25 C
0
20
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0
0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
400
200
100
10
1
TJ=25 C
20
SS12B-SS14B
SS15B-SS110B
0.1
0.01
0.1
1
10
100
2
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
2 of 2
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