IRF10N40 [SUNTAC]

POWER MOSFET; 功率MOSFET


型号：	IRF10N40
厂家：	SUNTAC ELECTRONIC CORP.
描述：	POWER MOSFET 功率MOSFET
文件：	总3页 (文件大小：87K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF10N40

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

'ꢀ Robust High Voltage Termination

'ꢀ Avalanche Energy Specified

'ꢀ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

'ꢀ Diode is Characterized for Use in Bridge Circuits

'ꢀ I_DSSand V_DS(on) Specified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current ꢀ Continuous

Symbol

I_D

Value

Unit

ꢀ Pulsed

I_DM

Gate-to-Source Voltage ꢀ Continue

ꢀ Non-repetitive

V_GS

V_GSM

P_D

Total Power Dissipation

125

Derate above 25R

1.0

W/R

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy ꢀ T_J= 25R

(V_DD= 100V, V_GS= 10V, I_L= 10A, L = 6mH, R_G= 25ꢀ)

Thermal Resistance ꢀ Junction to Case

ꢀ Junction to Ambient

T_J, T_STG

E_AS

-55 to 150

300

1.7

62.5

260

R/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

T_L

Page 1

IRF10N40

POWER MOSFET

ORDERING INFORMATION

Part Number

Package

...................IRF10N40..............................................TO-220

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, T_J= 25R.

IRF10N40

Characteristic

Drain-Source Breakdown Voltage

(V_GS= 0 V, I_D= 250 ČA)

Symbol

Min

Typ

Max

Units

V_(BR)DSS

400

Drain-Source Leakage Current

(V_DS= 400 V, V_GS= 0 V)

I_DSS

0.25

1.0

(V_DS= 400 V, V_GS= 0 V, T_J= 125R)

Gate-Source Leakage Current-Forward

(V_gsf= 20 V, V_DS= 0 V)

I_GSSF

100

Gate-Source Leakage Current-Reverse

(V_gsr= 20 V, V_DS= 0 V)

I_GSSR

...............-100

4.0

Gate Threshold Voltage

V_GS(th)

2.0

(V_DS= V_GS, I_D= 250 ČA)

Static Drain-Source On-Resistance (V_GS= 10 V, I_D= 5.0A) *

Drain-Source On-Voltage (V_GS= 10 V)

(I_D= 5.0 A)

R_DS(on)

V_DS(on)

................0.4..............0..55

6.0

ꢀ

Forward Transconductance (V_DS= 50 V, I_D= 5.0A) *

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

..4.0................

mhos

Input Capacitance

1570

230

(V_DS= 25 V, V_GS= 0 V,

Output Capacitance

f = 1.0 MHz)

Reverse Transfer Capacitance

Turn-On Delay Time

(V_DD= 200 V, I_D= 10.0 A,

Rise Time

_GS= 10 V,

Turn-Off Delay Time

Fall Time

t_d(off)

t_f

R_G= 10ꢀ) *

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Internal Drain Inductance

Q_g

4.5

(V_DS= 320 V, I_D= 10.0 A,

Q_gs

Q_gd

L_D

_GS= 10 V)*

(Measured from the drain lead 0.25” from package to center of die)

Internal Drain Inductance

L_S

7.5

(Measured from the source lead 0.25” from package to source bond pad)

SOURCE-DRAIN DIODE CHARACTERISTICS

Forward On-Voltage(1)

(I_S= 10.0 A, V_GS= 0 V,

Forward Turn-On Time

d_IS/d_t= 100A/µs)

V_SD

t_on

.................2.0..............V....

250

Reverse Recovery Time

t_rr

* Pulse Test: Pulse Width !300µs, Duty Cycle !2%

** Negligible, Dominated by circuit inductance

Page 2

IRF10N40

POWER MOSFET

TYPICAL ELECTRICAL CHARACTERISTICS

Page 3

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