IRF840 [SUNTAC]
POWER MOSFET; 功率MOSFET
| 型号： | IRF840 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | POWER MOSFET |
| 文件： | 总5页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF840
POWER MOSFET
!
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
'ꢀ Robust High Voltage Termination
'ꢀ Avalanche Energy Specified
'ꢀ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
'ꢀ Diode is Characterized for Use in Bridge Circuits
'ꢀ IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
D
G
S
2
3
1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current ꢀ Continuous
Symbol
ID
Value
8.0
32
Unit
A
ꢀ Pulsed
IDM
Gate-to-Source Voltage ꢀ Continue
ꢀ Non-repetitive
VGS
VGSM
PD
20
V
V
40
Total Power Dissipation
W
TO-220
125
40
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy ꢀ TJ = 25R
(VDD = 100V, VGS = 10V, IL = 8A, L = 10mH, RG = 25ꢀ)
Thermal Resistance ꢀ Junction to Case
ꢀ Junction to Ambient
TJ, TSTG
EAS
-55 to 150
320
R
mJ
%
1.0
62.5
260
R/W
JC
%
JA
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
TL
R
Page 1
IRF840
POWER MOSFET
!
ORDERING INFORMATION
Part Number
Package
IRF840.................................................TO-220
....................IRF840FP TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25R.
C IRF840
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ČA)
Symbol
Min
Typ
Max
Units
V(BR)DSS
500
V
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
IDSS
mA
0.25
1.0
(VDS = 400 V, VGS = 0 V, TJ = 125R)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
nA
V
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
4.0
Gate Threshold Voltage
VGS(th)
2.0
4.9
(VDS = VGS, ID = 250 ČA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 8.0 A)
RDS(on)
VDS(on)
0.8
7.2
ꢀ
5.0
V
Forward Transconductance (VDS = 50 V, ID = 4.0A) *
Input Capacitance
gFS
Ciss
Coss
Crss
td(on)
tr
mmhos
1450
190
45.4
15
1680
246
144
50
pF
pF
(VDS = 25 V, VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
f = 1.0 MHz)
pF
ns
ns
33
72
(RGo + C17n = 9.1ꢀ) *
(VDS = 400 V, ID = 8.0 A,
ns
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
40
150
60
32
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
Qg
40
64
nC
nC
Qgs
Qgd
LD
8.0
17
V
GS = 10 V)*
nC
nH
4.5
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
LS
7.5
nH
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
(IS = 8.0 A, VGS = 0 V,
Forward Turn-On Time
dIS/dt = 100A/µs)
VSD
ton
1.5
V
**
ns
ns
Reverse Recovery Time
trr
320
* Pulse Test: Pulse Width !300µs, Duty Cycle !2%
** Negligible, Dominated by circuit inductance
Page 2
IRF840
POWER MOSFET
!
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3
IRF840
POWE MOSFET
!
Page 4
IRF840
POWER MOSFET
!
Page 5
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