STC2SB772 [SUNTAC]
PNP EPITAXIAL SILICON TRANSISTOR; PNP外延硅晶体管
| 型号： | STC2SB772 |
| 厂家： | 
SUNTAC ELECTRONIC CORP. |
| 描述： | PNP EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STC2SB772
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The STC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
1
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
TO-126
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Pc
VALUE
UNIT
V
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Collector Dissipation( Tc=25°C)
Collector Dissipation( Ta=25°C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
10
W
W
A
Pc
1
-3
Ic
Ic
-7
A
IB
-0.6
A
Junction Temperature
Storage Temperature
Tj
150
°C
°C
TSTG
-55 ~ +150
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
ICBO
VCB=-30V,IE=0
-1000
-1000
nA
nA
IEBO
VEB=-3V,Ic=0
hFE1
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
200
150
-0.3
-1.0
80
hFE2
100
400
-0.5
-2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat)
VBE(sat)
fT
Ic=-2A,IB=-0.2A
V
V
Ic=-2A,IB=-0.2A
VCE=-5V,Ic=-0.1A
VCB=-10V,IE=0,f=1MHz
MHz
pF
Cob
45
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
1
U
,A
STC2SB772
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
A
B
RANGE
100-200
200-300
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.2 Derating curve of safe
Fig.1 Static characteristics
Fig.3 Power Derating
operating areas
150
12
1.6
-IB=9mA
-IB=8MA
-IB=7mA
100
1.2
8
-IB=6mA
-IB=5mA
S
o
/
b
l
i
m
D
i
t
i
e
d
s
0.8
s
i
p
-IB=4mA
a
t
50
i
4
0
n
-IB=3mA
-IB=2mA
-IB=1mA
l
i
m
0.4
0
i
t
e
d
0
0
4
8
12
16
20
-50
0
50
100
150
200
-50
0
50
100
150
200
-Collector-Emitter voltage(V)
Tc,Case Temperature(°C)
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
Fig.5 Current gain-
bandwidth product
Fig.6 Safe operating area
3
3
1
Ic(max),Pulse
0
.1
10
10
10
mS
1
0
1
m
m
S
S
Ic(max),DC
VCE=5V
I
f=1MHz
E
=0
2
2
0
10
10
10
IB
=8mA
1
1
10
-1
10
10
0
0
10
-2
10
10
0
-1
10
-2
10
-3
10
-2
10
-1
10
0
1
0
1
2
10
10
10
10
10
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
Fig.7 DC current gain
Fig.8 Saturation Voltage
3
4
10
10
V
CE=-2V
VBE(sat)
3
10
2
10
2
10
VCE(sat)
1
10
1
10
0
0
10
10
0
10
1
2
3
4
0
1
2
3
4
10
10
10
10
10
10
10
10
10
-Ic,Collector current(mA)
-Ic,Collector current(mA)
2
U
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