TC6320TG [SUPERTEX]
N- and P-Channel Enhancement-Mode MOSFET Pair; N和P沟道增强型MOSFET配对
| 型号： | TC6320TG |
| 厂家： | 
Supertex, Inc |
| 描述： | N- and P-Channel Enhancement-Mode MOSFET Pair |
| 文件： | 总3页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC6320
________________________________________________________________________________
Initial Release
N- and P-Channel Enhancement-Mode MOSFET Pair
Features
General Description
The Supertex TC6320TG consists of a high voltage low
threshold N-channel and P-channel MOSFET in an SO-8
package. Both MOSFETs have integrated gate-source
resistors and gate-source zener diode clamps which are
desired for high voltage pulser applications. TC6320TG, a
complementary high-speed, high voltage, gate-clamped
N- and P-channel MOSFET pair in a single SO-8
package. The TC6320TG offers 200V breakdown voltage,
2.0A output peak current and low input capacitance. The
2.0A output current capability will minimize rise and fall
times. The low input capacitance will minimize
propagation delay times and also rise and fall times. The
MOSFETs have integrated gate-source resistors and
gate-source zener diode clamps that are desired for high
voltage pulser applications saving board space and
improving performance. It is specifically designed for
applications in medical ultrasound transmitters and non-
destructive evaluation in materials flaw detection, but it
can also be used as an efficient buffer.
ꢀ Integrated gate-source resistor
ꢀ Integrated gate-source zener diode
ꢀ Low threshold
ꢀ Low on-resistance
ꢀ Independent N- and P-channels
ꢀ Electrically isolated N- and P-channels
ꢀ Low input capacitance
ꢀ Fast switching speeds
ꢀ Free from secondary breakdowns
ꢀ Low input and output leakage
Application
ꢀ High voltage pulsers
ꢀ Amplifiers
ꢀ Buffers
ꢀ Piezoelectric transducer drivers
ꢀ General purpose line drivers
ꢀ Logic level interfaces
Package Option
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
N-Channel
P-Channel
Absolute Maximum Ratings*
Drain-to-Source Voltage
BVDSS
BVDGS
Drain-to-Gate Voltage
Operating and Storage Temperature
-55°C to +150°C
300°C
Soldering Temperature*
*Distance of 1.6mm from case for 10 seconds.
SO-8 Package
(top view)
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate
"products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices
determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For
the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or
to the Legal/Disclaimer page on the Supertex website.
TC6320
________________________________________________________________________________
BVDSS / BVDGS
N-Channel P-Channel N-Channel
200V -200V
RDS(ON) (max)
Order Number / Package
SO-8
P-Channel
TC6320TG
7.0Ω
8.0Ω
N-Channel Electrical Characteristics (at TA=25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source
200
V
VGS=0V, ID=2mA
Breakdown Voltage
VGS(th)
∆VGS(th)
RGS
∆RGS
VzGS
∆VzGS
IDSS
Gate Threshold Voltage
1.0
10
2.0
-4.5
50
V
VGS=VDS, ID=1mA
Change in VGS(th) with Temperature
Gate-Source Shunt Resistor
Change in RGS with Temperature
Gate-Source Zener Voltage
Change in VzGS with Temperature
Zero Gate Voltage Drain Current
mV/°C VGS=VDS, ID=1mA
IGS=100µA
IGS=100µA
IGS=2mA
KΩ
%/°C
V
TBD
25
13.2
TBD
10
mV/°C IGS=2mA
µA
VGS=0V, VDS=Max Rating
1.0
mA
VGS=0V, VDS=0.8 Max
Rating, TA=125°C
ID(ON)
On-State Drain Current
1.0
2.0
A
VGS=4.5V, VDS=25V
VGS=10V, VDS=25V
VGS=4.5V, ID=150mA
VGS=10V, ID=1.0A
RDS(ON) Static Drain-to-Source
ON-State Resistance
8.0
7.0
1.0
Ω
Change in RDS(ON) with Temperature
%/°C
VGS=4.5V, ID=150mA
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward Transconductance
Input Capacitance
400
mmho VDS=25V, ID=200mA
VGS=0V, VDS=25V
110
60
23
10
15
20
15
1.8
pF
f=1MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
VDD=25V,
ID=1.0A
ns
R
GEN=25 Ω
td(OFF)
Turn-Off Delay Time
tf
Fall Time
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
V
VGS=0V, ISD=0.5A
VGS=0V, ISD=0.5A
300
ns
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2) All AC parameters sample tested.
VDD
RL
N-Channel Switching Waveforms and Test Circuit
10V
90%
Input
Pulse
OUTPUT
10%
Generator
RGEN
0V
t(ON)
td(ON)
t(OFF)
td(OFF)
D.U.T
tr
tf
VDD
Input
10%
10%
90%
Output
90%
0V
Supertex, Inc.
2
January 21, 2003
TC6320
________________________________________________________________________________
P-Channel Electrical Characteristics (at TA=25°C unless otherwise specified)
Symbol Parameter
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source
-200
V
VGS=0V, ID=-2mA
Breakdown Voltage
VGS(th)
∆VGS(th)
RGS
Gate Threshold Voltage
-1.0
10
-2.4
4.5
V
VGS=VDS, ID=-1mA
Change in VGS(th) with Temperature
Gate-Source Shunt Resistor
Change in RGS with Temperature
Gate-Source Zener Voltage
Change in VzGS with Temperature
Zero Gate Voltage Drain Current
mV/°C VGS=VDS, ID=-1mA
50
IGS=-100µA
IGS=-100µA
IGS=-2mA
KΩ
%/°C
V
TBD
25
∆RGS
VzGS
∆VGS(th)
IDSS
13.2
TBD
-10
-1.0
mV/°C IGS=-2mA
µA
VGS=0V, VDS=Max Rating
mA
VGS=0V, VDS=0.8 Max
Rating, TA=125°C
ID(ON)
On-State Drain Current
-1.0
-2.0
A
VGS=-4.5V, VDS=-25V
VGS=-10V, VDS=-25V
VGS=-4.5V, ID=-150mA
VGS=-10V, ID=-1.0A
VGS=-10V, ID=-200mA
RDS(ON) Static Drain-to-Source
ON-State Resistance
10
8.0
1.0
Ω
Change in RDS(ON) with Temperature
%/°C
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward Transconductance
Input Capacitance
400
mmho VDS=-25V, ID=-200mA
VGS=0V, VDS=-25V
200
55
pF
f=1MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
30
10
VDD=-25V,
ID=-1.0A
ns
15
R
GEN=25 Ω
td(OFF)
Turn-Off Delay Time
20
tf
Fall Time
15
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
-1.8
V
VGS=0V, ISD=-0.5A
VGS=0V, ISD=-0.5A
300
ns
Notes:
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2) All AC parameters sample tested.
P-Channel Switching Waveforms and Test Circuit
0V
Pulse
10%
Generator
Input
RGEN
90%
D.U.T
-10V
t(ON)
td(ON)
t(OFF)
td(OFF)
Input
tr
tf
OUTPUT
0V
90%
10%
90%
10%
Output
VDD
RL
VDD
1/22/03
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