TN0702N3 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FETs; N沟道增强型垂直DMOS场效应管
| 型号： | TN0702N3 |
| 厂家： | 
Supertex, Inc |
| 描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 文件： | 总4页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TN0702
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
TO-92
BVDSS
/
RDS(ON)
(max)
1.3Ω
ID(ON)
(min)
0.5A
VGS(th)
(max)
1.0V
BVDGS
20V
TN0702N3
Features
Low Threshold DMOS Technology
❏
❏
❏
❏
❏
❏
❏
❏
Low threshold — 1.0 volt max
These low threshold enhancement-mode (normally-off) transis-
tors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
On resistance guaranteed at VGS = 2, 3, and 5 volts
High input impedance
Low input capacitance —130pF typical
Fast switching speeds
Low on resistance
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, highbreakdownvoltage, highinputimpedance, lowinput
capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low input and output leakage
Applications
❏
❏
❏
❏
❏
❏
❏
Logic level interfaces
Solid state relays
Package Option
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSS
BVDGS
± 20V
S G D
TO-92
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
*Distance of 1.6 mm from case for 10 seconds maximum.
Note: See Package Outline section for dimensions.
03/11/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
TN0702
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
0.53A
1.0A
1W
125
170
0.53A
1.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
BVDSS
VGS(th)
∆VGS(th)
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Min
Typ
Max
Unit
Conditions
20
V
VGS = 0V, ID = 1mA
0.5
0.8
1.0
-4.0
100
100
100
V
VGS = VDS, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
mV/°C
nA
IDSS
Zero Gate Voltage Drain Current
nA
VDS = 20V, VGS = 0V
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
µA
ID(ON)
ON-State Drain Current
0.5
1.0
4.0
1.9
1.0
A
Ω
VGS = VDS = 5V
5.0
2.5
VGS = 2V, ID = 50mA
VGS = 3V, ID = 200mA
VGS = 5V, ID =500mA
VGS = 5V, ID = 500mA
VDS = 5V, ID = 500mA
Static Drain-to-Source
ON-State Resistance
RDS(ON)
1.3
∆RDS(ON)
GFS
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
0.75
%/°C
Ω
100
500
130
70
m
CISS
COSS
CRSS
td(ON)
tr
200
125
60
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
VGS = 0V, VDS = 20V, f =1MHz
30
20
VDD = 20V, ID = 0.5A,
Rise Time
20
ns
V
RGEN = 25Ω
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
30
20
VSD
Diode Forward Voltage Drop
1.0
VGS = 0V, ISD = 0.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwide stated. (Pulse test: 300 µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
TN0702
Typical Performance Curves
°
°
°
°
°
°
3
TN0702
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.2
1.0
0.8
V
= 2V
GS
V
= 3V
GS
V
GS
= 5V
2.0
-50
0
50
100
150
0
0.5
1.0
1.5
2.5
ID (amperes)
Tj (°C)
Transfer Characteristics
= 5V
V(th) and RDS Variation with Temperature
1.6
5
4
3
2
1
0
V
DS
1.4
1.2
1.0
0.8
0.6
R
5V, 500mA
DS(ON) @
1.4
1.2
1.0
0.8
0.6
T
= -55°C
A
V
(th)
@ 1mA
T
= 25°C
A
T
= 125°C
A
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
200
150
100
50
10
8
f = 1MHz
V
= 10V
DS
C
ISS
200pF
6
V
= 20V
DS
C
C
OSS
4
2
RSS
146 pF
0
0
0
5
10
15
20
0
0.6
1.2
1.8
2.4
3.0
QG (nanocoulombs)
VDS (volts)
02/06//02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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