TN2640N3-GP005 [SUPERTEX]

Small Signal Field-Effect Transistor;


型号：	TN2640N3-GP005
厂家：	Supertex, Inc
描述：	Small Signal Field-Effect Transistor 输入元件开关晶体管
文件：	总8页 (文件大小：815K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Supertex inc.

TN2640

N-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally induced

secondary breakdown.

► Low threshold (2.0V max.)

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Logic level interfaces - ideal for TTL and CMOS

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Solid state relays

► Battery operated systems

► Photo voltaic drives

► Analog switches

► General purpose line drivers

► Telecom switches

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

V_GS(th)

(max)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

(max)

(min)

TN2640K4-G

TO-252 (D-PAK)

8-Lead SOIC

2000/Reel

2500/Reel

1000/Bag

400V

5.0Ω

2.0A

2.0V

TN2640LG-G

TN2640N3-G

3-Lead TO-92

Pin Conﬁguration

TN2640N3-G P002

TN2640N3-G P003

DRAIN

TN2640N3-G P005 3-Lead TO-92

TN2640N3-G P013

2000/Reel

GATE

SOURCE

N/C

SOURCE

GATE

TN2640N3-G P015

TO-252 (D-PAK)

8-Lead SOIC

For packaged products, -G indicates package is RoHS compliant (‘Green’).

TO-92 taping speciﬁcations and winding styles per EIA-468 Standard.

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Speciﬁcation VF57 for layout and dimensions.

DRAIN

GATE

Absolute Maximum Ratings

Parameter

SOURCE

Value

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

BV_DSS

BV_DGS

TO-92

Typical Thermal Resistance

±20V

Package

θ_ja

-55°C to +150°C

TO-252 (D-PAK)

8-Lead SOIC

TO-92

81^OC/W

101^OC/W

132^OC/W

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

Product Marking

YY = Year Sealed

WW = Week Sealed

L = Lot Number

Si YYWW

TN2640

LLLLLLL

YYWW

WW = Week Sealed

L = Lot Number

N2640

LLLL

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-252 (D-PAK)

8-Lead SOIC

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

SiTN

2 6 4 0

YYWW

Package may or may not include the following marks: Si or

TO-92

Thermal Characteristics

I_D

Power Dissipation

†

Package

I_DR

I_DRM

(continuous)^†

500mA

(pulsed)

@T_A= 25^OC

TO-252 (D-PAK)

8-Lead SOIC

3.0A

2.0A

2.5W^‡

1.3W^‡

0.74W

500mA

260mA

220mA

3.0A

2.0A

260mA

TO-92

220mA

Notes:

†

‡

I_D(continuous) is limited by max rated T_j.

Mounted on FR4 board, 25mm x 25mm x 1.57mm

Electrical Characteristics (T_A= 25°C unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

Parameter

Min

Typ

Max

Units Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

400

V_GS= 0V, I_D= 1.0mA

V_GS= V_DS, I_D= 2.0mA

0.8

2.0

-4.0

100

ΔV_GS(th)Change in V_GS(th)with temperature

-2.5

mV/^OC V_GS= V_DS, I_D= 2.0mA

I_GSS

Gate body leakage

µA

V_GS= ±20V, V_DS= 0V

V_GS= 0V, V_DS= Max rating

I_DSS

Zero gate voltage drain current

V_DS= 0.8 Max Rating,

V_GS= 0V, T_A= 125^OC

1.0

1.5

3.5

4.0

3.2

3.0

V_GS= 5.0V, V_DS= 25V

V_GS= 10V, V_DS= 25V

V_GS= 4.5V, I_D= 500mA

V_GS= 10V, I_D= 500mA

I_D(ON)

On-state drain current

2.0

5.0

0.75

Static drain-to-source

on-state resistance

R_DS(ON)

ΔR_DS(ON)Change in R_DS(ON)with temperature

%/^OC

G_FS

C_ISS

C_OSS

C_RSS

Forward transconductance

Input capacitance

200

330

210

mmho V_DS= 25V, I_D= 100mA

225

V_GS= 0V,

Common source output capacitance

Reverse transfer capacitance

V_DS= 25V,

f = 1.0MHz

8.0

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

Electrical Characteristics (T_A= 25°C unless otherwise speciﬁed)

Sym

t_d(ON)

t_r

Parameter

Min

Typ

4.0

Max

0.9

Units Conditions

Turn-on delay time

Rise time

V_DD= 25V,

I_D= 2.0A,

t_d(OFF)

t_f

Turn-off delay time

Fall time

R_GEN= 25Ω

V_SD

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= 200mA

V_GS= 0V, I_SD= 1.0A

t_rr

300

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

N- Channel Switching Waveforms and Test Circuit

10V

VDD

90%

INPUT

Pulse

R_L

10%

Generator

OUTPUT

t_(ON)

t_d(ON)

t_(OFF)

t_d(OFF)

R_GEN

t_f

t_r

VDD

OUTPUT

INPUT

D.U.T.

10%

90%

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

Typical Performance Curves

BV_DSSVariation with Temperature

On-Resistance vs. Drain Current

1.15

V_GS= 5.0V

1.10

1.05

1.00

0.95

0.90

_GS= 10V

-50

100

150

1.0

2.0

3.0

4.0

5.0

T_j(^OC)

I_D(amperes)

V_(th)and R_DSVariation with Temperature

Transfer Characteristics

1.4

1.2

1.0

0.8

0.6

0.4

2.2

1.8

1.4

-1.0

0.6

0.2

3.0

2.4

1.8

1.2

0.6

25^OC

V_(th)@ 2.0mA

125^OC

T_A= -55^OC

V_DS= -25V

R_DS(ON)@ 10V, 0.5A

-50

100

150

V_GS(volts)

T_j(^OC)

Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics

400

f = 1MHz

300

653pF

V_DS= 10V

200

C_ISS

V_DS= 40V

100

C_OSS

253pF

C_RSS

Q_G(nanocoulombs)

V_DS(volts)

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

Typical Performance Curves (cont.)

Output Characteristics

Saturation Characteristics

5.0

2.5

2.0

1.5

1.0

0.5

V_GS= 10V

4.0

V_GS= 10V

3.0

2.0

1.0

V_DS(volts)

Transconductance vs. Drain Current

Power Dissipation vs. Temperature

2.0

1.6

1.2

0.8

0.4

3.0

2.4

1.8

1.2

0.6

V_DS= 25V

DPAK

SO-8

T_A= -55^OC

25^OC

TO-92

125^OC

1.0

2.0

3.0

4.0

5.0

100

125

150

T_C(^OC)

I_D(amperes)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

TO-92 (pulsed)

DPAK (DC)

SO-8 (pulsed)

TO-92 (DC)

0.1

SO-8 (DC)

0.01

0.001

TO-92

P_D= 1W

T_C= 25^OC

1.0

100

1000

0.001

0.01

0.1

1.0

V_DS(volts)

t_P(seconds)

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

3-Lead TO-252 D-PAK Package Outline (K4)

θ1

Note 1

View B

Front View

Rear View

Side View

Gauge

Plane

A1 Seating

Plane

View B

Note:

1. Although 4 terminal locations are shown, only 3 are functional. Lead number 2 was removed.

0^O

Symbol

.086 .000* .025 .030 .195 .018 .235 .205 .250 .170

.240

θ1

0^O

MIN

.370 .055

.060

.410 .070

.035 .025* .045

Dimen-

sion

(inches)

.090

BSC

.108 .020

REF BSC

NOM

MAX .094 .005 .035 .045 .215 .035 .245 .217* .265 .182*

.050 .040 .060 10^O15^O

JEDEC Registration TO-252, Variation AA, Issue E, June 2004.

* This dimension is not speciﬁed in the JEDEC drawing.

Drawings not to scale.

Supertex Doc. #: DSPD-3TO252K4, Version E041309.

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

8-Lead SOIC (Narrow Body) Package Outline (LG)

4.90x3.90mm body, 1.75mm height (max), 1.27mm pitch

θ1

Note 1

(Index Area

D/2 x E1/2)

Gauge

Plane

Seating

Plane

Top View

View B

Note 1

Seating

Plane

Side View

View A-A

Note:

1. This chamfer feature is optional. A Pin 1 identiﬁer must be located in the index area indicated. The Pin 1 identiﬁer can be: a molded mark/identiﬁer;

an embedded metal marker; or a printed indicator.

Symbol

0^O

θ1

5^O

MIN 1.35* 0.10 1.25 0.31 4.80* 5.80* 3.80*

NOM 4.90 6.00 3.90

MAX 1.75 0.25 1.65* 0.51 5.00* 6.20* 4.00*

0.25 0.40

Dimension

(mm)

1.27

BSC

1.04 0.25

REF BSC

0.50 1.27

8^O

15^O

JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.

* This dimension is not speciﬁed in the JEDEC drawing.

Drawings are not to scale.

Supertex Doc. #: DSPD-8SOLGTG, Version I041309.

Doc.# DSFP-TN2640

C071913

Supertex inc.

www.supertex.com

TN2640

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-TN2640

C071913

TN2640N3-GP005 [SUPERTEX]

相关型号：

TN2640N3-GP013

TN2640N3-GP015

TN2640N3P001

TN2640N3P002

TN2640N3P005

TN2640N3P007

TN2640N3P011

TN2640N3P013

TN2640N3P016

TN2640ND

TN27-15-11

TN27/15/11