TP5322K1 [SUPERTEX]

P-Channel Enhancement-Mode Vertical DMOS FET; P沟道增强型垂直DMOS FET
TP5322K1
型号: TP5322K1
厂家: Supertex, Inc    Supertex, Inc
描述:

P-Channel Enhancement-Mode Vertical DMOS FET
P沟道增强型垂直DMOS FET

文件: 总2页 (文件大小:301K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TP5322  
Initial Release  
P-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
These low threshold enhancement-mode (normally-off)  
transistors utilize an advanced vertical DMOS structure and  
Supertex's well-proven silicon-gate manufacturing process. This  
combination produces devices with the power handling  
capabilities of bipolar transistors and with the high input  
impedance and positive temperature coefficient inherent in MOS  
devices. Characteristic of all MOS structures, these devices are  
free from thermal runaway and thermally-induced secondary  
breakdown.  
Low threshold, -2.4V max.  
High input impedance  
Low input capacitance, 110pFmax.  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Complementary N- and P-channel devices  
Supertex's vertical DMOS FETs are ideally suited to a wide  
range of switching and amplifying applications where very low  
threshold voltage, high breakdown voltage, high input  
impedance, low input capacitance, and fast switching speeds are  
desired.  
Application  
Logic level interfaces-ideal for TTL and CMOS  
Battery operated systems  
Photo voltaic devices  
Package Options  
Analog switches  
General purpose line drivers  
Telecom switches  
D
D
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
G
G
BVDSS  
BVDGS  
±20V  
D
S
S
Gate-to-Source Voltage  
TO-243AA  
(SOT-89)*  
TO-236AB  
(SOT-23)*  
Operating and Storage Temperature  
Soldering Temperature****  
****Distance of 1.6mm from case for 10 seconds.  
-55°C to +150°C  
300°C  
* "Green" Certified Package  
Product Marking for SOT-89  
TP3C  
Ordering Information  
VGS(th)  
(max)  
ID(ON)  
(min)  
Order Number / Package  
Where =2-week alpha date code  
BVDSS  
BVDGS  
/
RDS(ON)  
(max)  
TO-243AA**  
TP5322N8  
TO-236AB***  
TP5322K1  
-220V  
-220V  
-2.4V  
-2.4V  
-0.7A  
-0.7A  
12Ω  
12Ω  
Product Marking for SOT-23  
P3C✶  
TP5322N8-G*  
TP5322K1-G*  
**Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
***Same as SOT-23. Products supplied on 3000 piece carrier tape reels.  
Where =2-week alpha date code  
A042005  
TP5322  
Thermal Characteristics  
Package  
ID (continuous)  
ID (pulsed)  
Power Dissipation @  
TA = 25°C  
IDR*  
IDRM  
θJC  
°C/W  
15  
θJA  
°C/W  
78**  
350  
TO-243AA  
TO-236AB  
-0.26A  
-0.12A  
-0.90A  
-0.70A  
1.6W  
0.36W  
-0.26A  
-0.12A  
-0.9A  
-0.7A  
200  
*ID(continous) is limited by max rated Tj.  
**Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substate.  
Electrical Characteristics (@25°C unless otherwise specified)  
Symbol Parameter  
Min  
Typ  
Max  
Units  
Conditions  
BVDSS  
Drain-to-Source  
-220  
V
VGS = 0V, ID = -2mA  
Breakdown Voltage  
VGS(th)  
VGS(th)  
IGSS  
Gate Threshold Voltage  
Change in VGS(th) with Temperature  
Gate Body Leakage  
-1.0  
-2.4  
4.5  
-100  
-10  
V
VGS = VDS, ID = -1mA  
mV/°C VGS = VDS, ID = -1mA  
nA  
µA  
mA  
VGS = ±20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
VGS = 0V, VDS = 0.8 Max  
IDSS  
Zero Gate Voltage Drain Current  
-1.0  
Rating, TA = 125°C  
ID(ON)  
On-State Drain Current  
-0.7  
100  
-0.95  
10  
8.0  
A
VGS = -10V, VDS = -25V  
VGS = -4.5V, ID = -100mA  
RDS(ON) Static Drain-to-Source  
ON-State Resistance  
15  
12  
1.7  
VGS = -10V, ID = -200mA  
Change in RDS(ON) with Temperature  
Forward Transconductance  
Input Capacitance  
Common Source Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
%/°C  
VGS = -10V, ID = -200mA  
RDS(ON)  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
250  
mmho VDS = -25V, ID = -200mA  
VGS = 0V, VDS = -25V  
pF  
110  
45  
20  
10  
15  
f = 1MHz  
VDD = -25V,  
ID = -0.7A  
ns  
R
GEN = 25 Ω  
td(OFF)  
tf  
Turn-Off Delay Time  
Fall Time  
20  
15  
VSD  
trr  
Diode Forward Voltage Drop  
Reverse Recovery Time  
-1.8  
V
ns  
VGS = 0V, ISD = -0.5A  
VGS = 0V, ISD = -0.5A  
300  
Notes:  
1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)  
2) All AC parameters sample tested.  
Switching Waveforms and Test Circuit  
0V  
Pulse  
Generator  
Input  
RGEN  
-10V  
t(ON)  
td(ON)  
t(OFF)  
D.U.T  
Input  
tr  
td(OFF) tf  
OUTPUT  
0V  
RL  
Output  
VDD  
VDD  
Doc.# DSFP-TP5322  
A042005  

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