VN0300L-GP014 [SUPERTEX]
N-Channel Enhancement-Mode Vertical DMOS FET;型号: | VN0300L-GP014 |
厂家: | Supertex, Inc |
描述: | N-Channel Enhancement-Mode Vertical DMOS FET 开关 晶体管 |
文件: | 总3页 (文件大小:571K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Supertex inc.
VN0300
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain
Applications
► Motor controls
► Converters
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
► Amplifiers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Product Summary
RDS(ON)
(max)
Part Number
Package Option
Packing
IDSS
(min)
BVDSS/BVDGS
VN0300L-G
TO-92
1000/Bag
30V
1.2Ω
1.0A
VN0300L-G P002
VN0300L-G P003
VN0300L-G P005
VN0300L-G P013
VN0300L-G P014
Pin Configuration
TO-92
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
GATE
TO-92
Drain-to-source voltage
Drain-to-gate voltage
BVDSS
BVDGS
±30V
Gate-to-source voltage
Product Marking
Operating and storage temperature
-55OC to +150OC
Si VN
0 3 0 0 L
YYWW
YY = Year Sealed
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
Typical Thermal Resistance
TO-92
Package
θja
TO-92
132OC/W
Doc.# DSFP-VN0300
B081913
Supertex inc.
www.supertex.com
VN0300
Thermal Characteristics
ID
ID
Power Dissipation
†
Package
IDR
IDRM
@TC = 25OC
(continuous)†
(pulsed)
TO-92
640mA
3.0A
1.0W
640mA
3.0A
Notes:
†
ID (continuous) is limited by max rated Tj .
Electrical Characteristics(TA = 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max Units Conditions
BVDSS
VGS(th)
IGSS
Drain-to-source breakdown voltage
Gate threshold voltage
30
0.8
-
-
-
-
-
-
V
V
VGS = 0V, ID = 10µA
2.5
100
10
VGS = VDS, ID= 1.0mA
Gate body leakage
nA
VGS = ± 30V, VDS = 0V
VGS = 0V, VDS = Max Rating
-
IDSS
Zero gate voltage drain current
On-state drain current
µA
V
GS = 0V, VDS = 30V,
-
-
500
TA = 125°C
ID(ON)
1.0
-
-
-
-
-
-
-
-
A
VGS = 10V, VDS = 10V
VGS = 5.0V, ID = 300mA
VGS = 10V, ID = 1.0A
-
3.3
1.2
-
RDS(ON) Static drain-to-source on-state resistance
Ω
-
GFS
CISS
COSS
CRSS
Forward transductance
200
mmho VDS = 10V, ID = 500mA
Input capacitance
-
-
-
190
110
50
VGS = 0V,
VDS = 20V,
f = 1.0MHz
Common source output capacitance
Reverse transfer capacitance
pF
VDD = 25V,
ID = 1.0A,
RGEN = 25Ω
t(ON)
Turn-on time
-
-
30
ns
V
t(OFF)
VSD
Turn-off time
-
-
-
30
-
Diode forward voltage drop
0.9
VGS = 0V, ISD = 630mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
VDD
90%
INPUT
0V
Pulse
RL
10%
Generator
OUTPUT
t(ON)
td(ON)
t(OFF)
td(OFF)
RGEN
tf
tr
VDD
OUTPUT
0V
INPUT
D.U.T.
10%
10%
90%
90%
Doc.# DSFP-VN0300
B081913
Supertex inc.
www.supertex.com
2
VN0300
3-Lead TO-92 Package Outline (L)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E
E1
1
3
2
Bottom View
Symbol
A
.170
-
b
.014†
-
c
D
.175
-
E
.125
-
E1
.080
-
e
e1
.045
-
L
.500
-
MIN
NOM
MAX
.014†
-
.095
-
Dimensions
(inches)
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Doc.# DSFP-VN0300
B081913
3
相关型号:
VN0300L-TA
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
VN0300L-TA
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
TEMIC
VN0300L18-2
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-226AA
VISHAY
VN0300LP001
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0300LP004
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0300LP005
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0300LP006
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0300LP007
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
VN0300LP018
Small Signal Field-Effect Transistor, 0.64A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SUPERTEX
©2020 ICPDF网 联系我们和版权申明