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VN0550N3-GP003 [SUPERTEX]

Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3;
VN0550N3-GP003
型号： VN0550N3-GP003
厂家： Supertex, Inc    Supertex, Inc
描述：

Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, ROHS COMPLIANT PACKAGE-3

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Supertex inc.  
VN0550  
N-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
This enhancement-mode (normally-off) transistor utilizes  
a vertical DMOS structure and Supertex’s well-proven,  
silicon-gate manufacturing process. This combination  
produces a device with the power handling capabilities  
of bipolar transistors and the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally-induced secondary  
breakdown.  
► Low CISS and fast switching speeds  
► Excellent thermal stability  
► Integral source-drain diode  
► High input impedance and high gain  
Applications  
► Motor controls  
► Converters  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Amplifiers  
► Switches  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
RDS(ON)  
(max)  
60Ω  
Part Number  
Package Option  
Packing  
IDSS  
(min)  
BVDSS/BVDGS  
VN0550N3-G  
TO-92  
1000/Bag  
500V  
150mA  
VN0550N3-G P002  
VN0550N3-G P003  
VN0550N3-G P005  
VN0550N3-G P013  
VN0550N3-G P014  
Pin Configuration  
TO-92  
2000/Reel  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
DRAIN  
SOURCE  
Absolute Maximum Ratings  
Parameter  
Value  
GATE  
TO-92  
Drain-to-source voltage  
Drain-to-gate voltage  
BVDSS  
BVDGS  
±20V  
Gate-to-source voltage  
Product Marking  
Operating and storage temperature  
-55OC to +150OC  
SiVN  
0 5 5 0  
YYWW  
YY = Year Sealed  
Absolute Maximum Ratings are those values beyond which damage to the device may  
occur. Functional operation under these conditions is not implied. Continuous operation  
of the device at the absolute rating level may affect device reliability. All voltages are  
referenced to device ground.  
WW = Week Sealed  
= “Green” Packaging  
Package may or may not include the following marks: Si or  
Typical Thermal Resistance  
TO-92  
Package  
θja  
TO-92  
132OC/W  
Doc.# DSFP-VN0550  
C081913  
Supertex inc.  
www.supertex.com  
VN0550  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
†
Package  
IDR  
IDRM  
@TC = 25OC  
(continuous)†  
(pulsed)  
TO-92  
50mA  
250mA  
1.0W  
50mA  
250mA  
Notes:  
†
ID (continuous) is limited by max rated Tj .  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Sym  
BVDSS  
VGS(th)  
Parameter  
Min  
Typ  
Max  
-
Units Conditions  
Drain-to-source breakdown voltage  
Gate threshold voltage  
500  
-
V
V
VGS = 0V, ID = 1.0mA  
VGS = VDS, ID = 1.0mA  
2.0  
-
4.0  
-5.0  
100  
10  
ΔVGS(th) Change in VGS(th) with temperature  
-
-
-
-3.8  
mV/OC VGS = VDS, ID = 1.0mA  
IGSS  
Gate body leakage current  
-
-
nA  
µA  
VGS = ±20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
IDSS  
Zero gate voltage drain current  
VDS = 0.8 Max Rating,  
VGS = 0V, TA = 125OC  
-
-
1.0  
mA  
mA  
-
100  
350  
45  
-
-
VGS = 5.0V, VDS = 25V  
VGS = 10V, VDS = 25V  
VGS = 5.0V, ID = 50mA  
VGS = 10V, ID = 50mA  
ID(ON)  
On-state drain current  
150  
-
-
-
-
Static drain-to-source on-state  
resistance  
RDS(ON)  
Ω
40  
60  
1.7  
ΔRDS(ON) Change in RDS(ON) with temperature  
1.0  
%/OC VGS = 10V, ID = 50mA  
mmho VDS = 25V, ID = 50mA  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
50  
-
100  
45  
8.0  
2.0  
-
-
55  
10  
5.0  
10  
15  
10  
10  
-
VGS = 0V,  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on time  
-
pF  
VDS = 25V,  
f = 1.0MHz  
-
-
VDD = 25V,  
ID = 150mA,  
RGEN = 25Ω  
Rise time  
-
-
ns  
td(OFF)  
tf  
Turn-off time  
-
-
Fall time  
-
VSD  
Diode forward voltage drop  
Reverse recovery time  
-
0.8  
V
VGS = 0V, ISD = 500mA  
VGS = 0V, ISD = 500mA  
trr  
-
300  
-
ns  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
10V  
VDD  
90%  
INPUT  
0V  
Pulse  
RL  
10%  
Generator  
OUTPUT  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
RGEN  
tf  
tr  
VDD  
OUTPUT  
0V  
INPUT  
D.U.T.  
10%  
10%  
90%  
90%  
Doc.# DSFP-VN0550  
C081913  
Supertex inc.  
www.supertex.com  
2
VN0550  
Typical Performance Curves  
BVDSS Variation with Temperature  
On-Resistance vs. Drain Current  
100  
80  
60  
40  
20  
0
1.1  
1.0  
0.9  
VGS = 5.0V  
VGS = 10V  
-50  
0
50  
100  
150  
0
0.1  
0.2  
0.3  
0.4  
0.5  
Tj (OC)  
ID (amperes)  
V(th) and RDS Variation with Temperature  
Transfer Characteristics  
0.5  
VDS = 25V  
1.4  
1.8  
RDS(ON) @ 10V, 50mA  
0.4  
0.3  
0.2  
0.1  
0
TA = -55OC  
25OC  
1.2  
1.0  
0.8  
0.6  
1.4  
1.0  
0.6  
0.2  
150OC  
V(th) @ 1.0mA  
-50  
0
50  
100  
150  
0
2.0  
4.0  
6.0  
8.0  
10  
Tj (OC)  
VGS (volts)  
Capacitance vs. Drain-to-Source Voltage  
Gate Drive Dynamic Characteristics  
100  
10  
8.0  
6.0  
4.0  
2.0  
0
VDS = 10V  
f = 1MHz  
75  
105 pF  
50  
VDS = 40V  
112 pF  
CISS  
25  
50 pF  
COSS  
CRSS  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
0
10  
20  
30  
40  
QG (nanocoulombs)  
VDS (volts)  
Doc.# DSFP-VN0550  
C081913  
Supertex inc.  
www.supertex.com  
3
VN0550  
Typical Performance Curves (cont.)  
Output Characteristics  
Saturation Characteristics  
0.5  
0.25  
0.20  
0.15  
0.10  
0.05  
0
VGS = 10V  
8.0V  
6.0V  
VGS = 10V  
0.4  
8.0V  
6.0V  
0.3  
0.2  
0.1  
4V  
4.0V  
0
0
10  
20  
30  
40  
50  
0
2.0  
4.0  
6.0  
8.0  
10  
VDS (volts)  
VDS (volts)  
Transconductance vs. Drain Current  
Power Dissipation vs. Case Temperature  
0.40  
0.32  
0.24  
0.16  
0.08  
0
2.0  
VDS = 25V  
TA = -55OC  
TO-92  
1.0  
25OC  
125OC  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0
25  
50  
75  
100  
125  
150  
ID (amperes)  
TC (OC)  
Maximum Rated Safe Operating Area  
Thermal Response Characteristics  
1.0  
0.1  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TO-92 (DC)  
TO-92  
0.01  
PD = 1.0W  
TC = 25OC  
TC = 25OC  
0.001  
1.0  
10  
100  
1000  
0
0.01  
0.1  
1.0  
10  
tP (seconds)  
VDS (volts)  
Doc.# DSFP-VN0550  
C081913  
Supertex inc.  
www.supertex.com  
4
VN0550  
3-Lead TO-92 Package Outline (N3)  
D
A
Seating  
Plane  
1
2
3
L
c
b
e1  
e
Side View  
Front View  
E
E1  
1
3
2
Bottom View  
Symbol  
A
.170  
-
b
.014†  
-
c
D
.175  
-
E
.125  
-
E1  
.080  
-
e
e1  
.045  
-
L
.500  
-
MIN  
NOM  
MAX  
.014†  
-
.095  
-
Dimensions  
(inches)  
.210  
.022†  
.022†  
.205  
.165  
.105  
.105  
.055  
.610*  
JEDEC Registration TO-92.  
* This dimension is not specified in the JEDEC drawing.  
† This dimension differs from the JEDEC drawing.  
Drawings not to scale.  
Supertex Doc.#: DSPD-3TO92N3, Version E041009.  
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline  
information go to http://www.supertex.com/packaging.html.)  
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives  
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability  
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and  
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)  
©2013 Supertex inc.All rights reserved. Unauthorized use or reproduction is prohibited.  
Supertex inc.  
1235 Bordeaux Drive, Sunnyvale, CA 94089  
Tel: 408-222-8888  
www.supertex.com  
Doc.# DSFP-VN0550  
C081913  
5

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