VN2210N2-G [SUPERTEX]
Small Signal Field-Effect Transistor;型号: | VN2210N2-G |
厂家: | Supertex, Inc |
描述: | Small Signal Field-Effect Transistor 开关 晶体管 |
文件: | 总4页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VN2210
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Order Number / Package
BVDSS
/
RDS(ON)
ID(ON)
(min)
BVDGS
(max)
TO-39
TO-92
100V
0.35Ω
8A
VN2210N2
VN2210N3
† MIL visual screening available
Advanced DMOS Technology
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
These enhancement-mode (normally-off) transistors utilize a
verticalDMOSstructureandSupertex’swell-provensilicon-gate
manufacturingprocess.Thiscombinationproducesdeviceswith
thepowerhandlingcapabilitiesofbipolartransistorsandwiththe
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
❏ Low CISS and fast switching speeds
❏ Excellent thermal stability
❏ Integral Source-Drain diode
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
Package Options
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSS
BVDGS
± 20V
G
D
S
S G D
Drain-to-Gate Voltage
Gate-to-Source Voltage
TO-39
Case: DRAIN
TO-92
Operating and Storage Temperature
Soldering Temperature*
-55°C to +150°C
300°C
* Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
07/08/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
VN2210
Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR
*
IDRM
@ TC = 25°C
°C/W
°C/W
TO-92
TO-39
1.2A
1.7A
8.0A
1.0W
6.0W
125
21
170
125
1.2A
1.7A
8.0A
10.0A
10.0A
* ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
100
0.8
Typ
Max
Unit
Conditions
Drain-to-Source
BVDSS
V
VGS = 0V, ID = 10mA
Breakdown Voltage
VGS(th)
∆VGS(th)
IGSS
Gate Threshold Voltage
2.4
-5.5
100
50
V
mV/°C
nA
VGS = VDS, ID = 10mA
VGS = VDS, ID = 10mA
VGS = ±20V, VDS = 0V
Change in VGS(th) with Temperature
Gate Body Leakage
-4.3
1
IDSS
Zero Gate Voltage Drain Current
µA
VGS = 0V, VDS = Max Rating
10
mA
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ID(ON)
ON-State Drain Current
3
8
4.5
17
VGS = 5V, VDS = 25V
A
VGS = 10V, VDS = 25V
RDS(ON)
0.4
0.5
0.35
1.2
VGS = 5V, ID = 1A
VGS = 10V, ID = 4A
VGS = 10V, ID = 4A
VDS = 25V, ID = 2A
Static Drain-to-Source
ON-State Resistance
Ω
0.27
0.85
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
%/°C
Ω
1.2
300
125
50
500
200
65
VGS = 0V, VDS = 25V
f = 1 MHz
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
pF
ns
10
15
VDD = 25V
ID = 2A
RGEN = 10Ω
Rise Time
10
15
td(OFF)
tf
Turn-OFF Delay Time
Fall Time
50
65
30
50
VSD
trr
Diode Forward Voltage Drop
Reverse Recovery Time
1.0
500
1.6
V
VGS = 0V, ISD = 4A
VGS = 0V, ISD = 1A
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
0V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
2
VN2210
Typical Performance Curves
Output Characteristics
Saturation Characteristics
20
20
16
12
8
V
= 10V
GS
V
= 10V
GS
16
12
8
8V
8V
6V
6V
4
4
4V
3V
4V
3V
0
0
0
2
4
6
8
10
0
10
20
30
40
50
4.0
100
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
4.0
3.2
2.4
1.6
0.8
0
10
8
V
= 25V
DS
TO-39
T
= -55°C
6
A
25°C
4
150°C
2
TO-92
0
2.4
3.2
0
25
50
75
100
125
150
0
0.8
1.6
ID (amperes)
TC (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
10
1.0
0.8
0.6
0.4
0.2
0
TO-92 (pulsed)
TO-39
(pulsed)
TO-39 (DC)
1
TO-92 (DC)
0.1
TO-92
TC = 25°C
PD = 1W
T
= 25°C
C
0.01
0.1
1
10
0.001
0.01
0.1
1
10
VDS (volts)
tP (seconds)
3
VN2210
Typical Performance Curves
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
1.1
V
= 5V
GS
V
= 10V
GS
1.0
0.9
-50
0
50
100
150
0
4
8
12
16
20
ID (amperes)
Tj (°C)
Transfer Characteristics
= 25V
VGS(th)and R DS(ON)Variation with Temperature
1.2
1.1
1.0
0.9
0.8
0.7
10
8
2.0
1.6
1.2
0.8
0.4
V
DS
R
@ 10V, 4A
DS(ON)
T
= -55°C
A
6
25°C
4
150°C
V
@ 10mA
GS(th)
2
0
0
2
4
6
8
10
-50
0
50
100
150
VGS (volts)
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
500
375
10
8
V
= 10V
DS
C
ISS
6
900 pF
250
125
4
V
= 40V
DS
C
C
OSS
2
0
300 pF
2
RSS
0
6
0
10
20
30
40
0
4
8
10
QG (nanocoulombs)
VDS (volts)
07/08/02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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