VP2450N3-GP014 [SUPERTEX]

Small Signal Field-Effect Transistor,;


型号：	VP2450N3-GP014
厂家：	Supertex, Inc
描述：	Small Signal Field-Effect Transistor, 输入元件开关晶体管
文件：	总6页 (文件大小：695K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Supertex inc.

VP2450

P-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► High input impedance and high gain

► Excellent thermal stability

► Integral source-to-drain diode

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

I_D(ON)

Part Number

Package Option

Packing

V_GS(th)

(max)

BV_DSS/BV_DGS

(max)

(min)

VP2450N3-G

3-Lead TO-92

1000/Bag

-500V

30Ω

-200mA

-0.4V

VP2450N3-G P002

VP2450N3-G P003

Pin Conﬁguration

VP2450N3-G P005 3-Lead TO-92

VP2450N3-G P013

2000/Reel

DRAIN

VP2450N3-G P014

VP2450N3-G

TO-243AA (SOT-89)

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

SOURCE

DRAIN

GATE

Absolute Maximum Ratings

Parameter

TO-92

TO-243AA (SOT-89)

Value

BV_DSS

BV_DGS

±20V

Drain-to-source voltage

Drain-to-gate voltage

Product Marking

SiVP

2 4 5 0

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Gate-to-source voltage

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92

Typical Thermal Resistance

W = Code for week sealed

VP4EW

Package

θ_ja

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-243AA (SOT-89)

TO-92

132^OC/W

133^OC/W

TO-243AA (SOT-89)

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

VP2450

Thermal Characteristics

I_D

Package

I_D

Power Dissipation

†

I_DR

I_DRM

(continuous)^†

(pulsed)

@T_A= 25^OC

TO-92

-100mA

-160mA

-300mA

-800mA

0.74W

1.6^‡

-100mA

-160mA

-300mA

-800mA

TO-243AA (SOT-89)

†

‡

I_D(continuous) is limited by max rated T_j.

Mounted on FR5 board, 25mm x 25mm x 1.57mm.

Electrical Characteristics (T_A= 25^OC unless otherwise speciﬁed)

Sym

BV_DSS

V_GS(th)

Parameter

Min

Typ

Max Units Conditions

Drain-to-source breakdown voltage

Gate threshold voltage

-500

V_GS= 0V, I_D= -250µA

V_GS= V_DS, I_D= -1.0mA

-1.5

-3.5

ΔV_GS(th)Change in V_GS(th)with temperature

-4.8 mV/^OC V_GS= V_DS, I_D= -1.0mA

I_GSS

Gate body leakage

-100

-10

µA

V_GS= ± 20V, V_DS= 0V

V_GS= 0V, V_DS= Max Rating

I_DSS

Zero gate voltage drain current

_DS= 0.8 Max Rating,

-1.0

V_GS= 0V, T_A= 125°C

V_GS= -4.5V, V_DS= -15V

V_GS= -10V, V_DS= -15V

V_GS= -4.5V, I_D= -50mA

V_GS= -10V, I_D= -100mA

-75

I_D(ON)

On-state drain current

-200

R_DS(ON)Static drain-to-source on-state resistance

ΔR_DS(ON)Change in R_DS(ON)with temperature

0.75 %/^OC V_GS= -10V, I_D= -100mA

G_FS

C_ISS

C_OSS

C_RSS

t_d(ON)

t_r

Forward transductance

Input capacitance

150

320

mmho V_DS= -15V, I_D= -100mA

190

-1.8

_GS= 0V,

Common source output capacitance

Reverse transfer capacitance

Turn-on delay time

V_DS= -25V,

f = 1.0MHz

V_DD= -25V,

Rise time

I_D= -200mA,

t_d(OFF)

t_f

Turn-off delay time

R_GEN= 25Ω

Fall time

V_SD

t_rr

Diode forward voltage drop

Reverse recovery time

V_GS= 0V, I_SD= -100mA

300

Notes:

1. All D.C. parameters 100% tested at 25^OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

Pulse

10%

Generator

INPUT

R_GEN

90%

t_(OFF)

-10V

t_(ON)

t_d(ON)

D.U.T.

t_r

t_d(OFF)

t_f

INPUT

OUTPUT

R_L

90%

OUTPUT

VDD

10%

VDD

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

VP2450

Typical Performance Curves

BV_DSSVariation with Temperature

On Resistance vs. Drain Current

1.2

1.1

1.0

0.9

0.8

V_GS= -4.5V

V_GS= -10V

-50

100

150

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

T_j(^OC)

I_D(amperes)

_GS(th)and R_DS(ON)Variation w/ Temperature

Transfer Characteristics

1.5

1.3

1.1

0.9

0.7

2.2

1.8

1.4

1.0

0.6

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

T_A= -55^OC

_DS= -20V

25^OC

_TH@ -1.0mA

125^OC

_DS(ON)@ -10V, -0.1A

-1.0

-2.0

-3.0

-4.0

-50

100

150

V_GS(volts)

T_j(^OC)

Gate Drive Dynamic Characteristics

Capacitance vs. Drain Source Voltage

-10

400

I_D= -100mA

f = 1.0MHz

-8.0

V_DS= -20V

V_DS= -40V

300

200

-6.0

-4.0

-2.0

C_ISS

100

C_OSS

C_RSS

1.0

2.0

3.0

-10

-20

-30

-40

Q_G(nanocoulombs)

V_DS(volts)

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

VP2450

Typical Performance Curves (cont.)

Saturation Characteristics

Output Characteristics

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

-1.0

V_GS= -10V

_GS= -10V

_GS= -6.0V

V_GS= -4.5V

-0.8

V_GS= -6.0V

_GS= -4.5V

-0.6

V_GS= -3.5V

-0.4

-0.2

-2.0

-4.0

-6.0

-8.0

-10

-20

-30

-40

-50

V_DS(volts)

Power Dissipation vs Case Temperature

Transconductance vs Drain Current

1.0

0.8

0.6

0.4

0.2

2.0

V_DS= -20V

TO-243AA

1.5

T_A= -55^OC

25^OC

TO-92

1.0

125^OC

0.5

-100

-200

-300

-400

-500

100

125

150

I_D(milliamperes)

T_C(^OC)

Maximum Rated Safe Operating Area

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

-1.0

TO-243AA (pulsed)

TO-92 (pulsed)

TO-243AA (DC)

-0.1

-0.01

TO-243AA

T = 25^OC

P_D^A= 1.6W

TO-92 (DC)

TO-92

T = 25^OC

P^C_D= 1.0W

T_A= 25^OC

-0.001

0.001

0.01

0.1

1.0

-1.0

-10

-100

-1000

V_DS(volts)

t_P(seconds)

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

VP2450

3-Lead TO-92 Package Outline (N3)

Seating

Plane

Side View

Front View

Bottom View

Symbol

.170

.014^†

.175

.125

.080

.045

.500

MIN

NOM

MAX

.014^†

.095

Dimensions

(inches)

.210

.022^†

.205

.165

.105

.055

.610*

JEDEC Registration TO-92.

* This dimension is not speciﬁed in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale.

Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Doc.# DSFP-VP2450

B082613

Supertex inc.

www.supertex.com

VP2450

3-Lead TO-243AA (SOT-89) Package Outline (N8)

Top View

Side View

Symbol

1.40

0.44

0.36

0.35

1.62

2.29

2.00^†

0.73^†

MIN

NOM

MAX

4.40

3.94

Dimensions

(mm)

1.50

BSC

3.00

BSC

1.60

0.56

0.48

0.44

4.60

1.83

2.60

2.29

4.25

1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing

Drawings not to scale.

Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability

to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and

specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Doc.# DSFP-VP2450

B082613

VP2450N3-GP014 [SUPERTEX]

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