SPN75T10T220TGB [SYNC-POWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SPN75T10T220TGB |
| 厂家： | 
SYNC POWER CROP. |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总7页 (文件大小：469K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPN75T10
N-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
Power Tool
Motor Control
The SPN75T10 is the N-Channel logic enhancement
mode power field effect transistor which is produced
using high cell density DMOS trench technology. This
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suitable
for synchronous rectifier application, Motor control
power management and other Power Tool circuits. It has
been optimized for low gate charge, low RDS(ON) and fast
switching speed.
FEATURES
PIN CONFIGURATION
TO-220-3L TO-220F-3L PPAK5x6-8L TO252-2L
100V/80A,RDS(ON)=9.2mΩ@VGS=10V
100V/80A,RDS(ON)=14mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L/TO-220F-3L/TO-252-2L/PPAK5x6-8L
package design
PART MARKING
2020/05/05 Ver 2
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SPN75T10
N-Channel Enhancement Mode MOSFET
TO-220/TO-220F/TO-252 PIN DESCRIPTION
Pin
Symbol
Description
1
2
3
G
D
S
Gate
Drain
Source
PPAK5x6 PIN DESCRIPTION
Pin
1
Symbol
Description
Source
Source
Source
Gate
S
S
2
3
S
4
G
D
D
D
D
5
Drain
6
Drain
7
8
Drain
Drain
ORDERING INFORMATION
Part Number
Package
Part Marking
SPN75T10T220TGB
SPN75T10T220FTGB
SPN75T10T252RGB
SPN75T10DN8RGB
TO-220-3L
TO-220F-3L
TO-252-2L
PPAK5x6-8L
SPN75T10
SPN75T10
SPN75T10
SPN75T10
※ SPN75T10T220TGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T10T220FTGB : Tube ; Pb – Free ; Halogen – Free
※ SPN75T10T252RGB : Tape Reel ; Pb – Free ; Halogen – Free
※ SPN75T10DN8RGB : Tape Reel ; Pb – Free ; Halogen – Free
2020/05/05 Ver 2
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SPN75T10
N-Channel Enhancement Mode MOSFET
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
VDSS
Typical
100
Unit
V
Drain-Source Voltage
Gate –Source Voltage
VGSS
+20/-12
V
TC=25℃
TC=100℃
80
50.6
Continuous Drain Current(Silicon Limited)
ID
A
A
Pulsed Drain Current
IDM
320
156
145
135
Power Dissipation@ TC=25℃ TO-220
Power Dissipation@ TC=25℃ TO-220F/TO-252
PD
W
Power Dissipation@ TC=25℃ PPAK5x6
Avalanche Energy with Single Pulse
( Tj=25℃, L=0.1mH , IAS=65A , VDD=50V , VGS=10V)
EAS
211
mJ
Operating Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
RθJA
RθJC
-55/150
62
℃
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
℃/W
℃/W
0.8
Note :
The maximum current rating is package limited at 78A for TO-220F-3L
The maximum current rating is package limited at 70A for TO-252-2L
The maximum current rating is package limited at 80A for PPAK5x6-8L
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SPN75T10
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ
Max. Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
100
1.0
V
2.5
IGSS
VDS=0V,VGS=+20V/-12V
±100
nA
uA
VDS=80V,VGS=0V
TJ=25°C
VDS=80V,VGS=0V
TJ=125°C
1
Zero Gate Voltage Drain Current
IDSS
10
VGS=10V,ID=15A
7.6
9.2
14
1
Drain-Source On-Resistance
RDS(on)
VSD
mΩ
VGS=4.5V,ID=8A
10.8
Diode Forward Voltage
IS=1A,VGS=0V,TJ=25°C
V
Dynamic
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
39.7
5.4
80
10
VDS=80V,VGS=10V
ID=8.5A
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
nC
pF
11.2
2550
685
42
22
5100
1370
84
VDD=25V,VGS=0V
f=1MHz
Output Capacitance
Reverse Transfer Capacitance
14.6
21.5
54
30
Turn-On Time
Turn-Off Time
VDD=50V,
ID=1A,VGS=10V
RG=6Ω
44
nS
td(off)
tf
108
168
84.3
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SPN75T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/05/05 Ver 2
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SPN75T10
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/05/05 Ver 2
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SPN75T10
N-Channel Enhancement Mode MOSFET
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SYNC Power Corporation
7F-2, No.3-1, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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2020/05/05 Ver 2
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