LSI1012XT1G [TAK_CHEONG]
Small Signal Field-Effect Transistor,;型号: | LSI1012XT1G |
厂家: | Tak Cheong Electronics (Holdings) Co.,Ltd |
描述: | Small Signal Field-Effect Transistor, |
文件: | 总4页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TAK CHEONG ®
SEMICONDUCTOR
150mW SOT-523 SURFACE MOUNT
Plastic Package
N-Channel 1.8-V (G-S) MOSFET
Green Product
3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
5 secs
Steady State
Units
2
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current e TA=25℃
TA=85℃
20
V
V
1. Gate
2. Source
3. Drain
±6V
1
600
400
500
350
mA
mA
mA
mW
°C
°C
V
SOT-523
IDM
IS
Pulsed Drain Current d
1000
Continuous Source Current e
Power Dissipation e
275
250
TA=25℃
TA=85℃
175
90
150
80
PD
TSTG
TJ
Storage Temperature Range
-55 to +150
+150
Operating Junction Temperature
Gate-source ESD Rating
(HBM, Method 3015)
ESD
2000
These ratings are limiting values above which the serviceability of the device may be impaired.
Notes:
d.
e.
Pulse width limited by maximum junction temperature.
Surface mounted on FR4 board.
FEATURES
Electrical Symbol:
Device Marking Code:
®
z
z
z
z
z
z
z
TrenchFET Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000V
High-side Switching
Low On-Resistance: 0.7Ω
Low Threshold: 0.8V (Typ.)
Fast Switching Speed: 10ns
S-Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change
Requirements
A
z
z
z
z
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
BENEFITS
z
z
z
z
z
Ease in Driving Switches
Low Offset(Error) Voltage
Low-Voltage operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
z
z
z
z
Drivers: Relays, Solenoids, Lamps, Hammers, displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, agers
DB Number: DB-270
March 2015, Revision A
Page 1
TAK CHEONG
SEMICONDUCTOR
Electrical Characteristics (TA = 25°C unless otherwise noted)
Static
Limits
Symbol
Parameter
Test Condition
Unit
Min
Typ
Max
Vth(GS)
IGSS
Gate-Threshold Voltage
Gate-Body Leakage
VDS= VGS, ID=250uA
VDS=0V, VGS=±4.5V
VDS=20V, VGS=0V
0.45
0.9
Volts
uA
±0.5
±1.0
IDSS
Zero Gate Voltage Drain Current
On-state Drain Current a
Drain-Source On-Resistance a
0.3
100
nA
ID(ON)
RDS(on)
VDS=5V, VGS=4.5V
VGS=4.5V, ID=600mA
VGS=2.5V, ID=500mA
700
mA
0.41
0.53
0.70
0.85
1.25
Ω
VGS=1.8V, ID=350mA
VDS=10V, ID=400mA
0.70
1
gfs
Forward Trans Conductance a
Diode Forward Voltage a
ms
V
VSD
0.8
1.2
IS=150mA, VGS=0V
Dynamic b
Symbol
Limits
Typ
Parameter
Test Condition
Unit
Min
--
Max
--
Qg
Qgs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
750
75
225
5
VDS=10V, VGS=4.5V,
ID=250mA
--
--
pC
Qgd
--
--
Td(on)
tr
td(off)
tf
--
--
VDD=10V, RL=47Ω,
ID=200mA, VGEN=4.5V
RG=10Ω
--
5
--
ns
Turn-Off Delay Time
Fall Time
--
25
11
--
--
--
Notes:
a.
b.
Pulse test: pulse width≤300us, duty cycle ≤2%.
Guaranteed by design, not subject to production testing.
DB Number: DB-270
March 2015, Revision A
Page 2
TAK CHEONG
SEMICONDUCTOR
SOT-523 Package Outline
MILLIMETERS
MIN
INCHES
DIM
MAX
0.90
0.10
0.80
0.25
0.35
0.20
1.70
0.90
1.75
MIN
MAX
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
A
A1
A2
b1
b2
c
0.70
0.00
0.70
0.15
0.25
0.10
1.50
0.70
1.45
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
D
E
E1
e
0.50 TYP.
0.020 TYP.
Typical Soldering Pattern:
e1
L
0.90
1.10
0.035
0.043
0.40 REF.
0.016 REF.
L1
θ
0.10
0O
0.30
8O
0.004
0O
0.012
8O
NOTES:
1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A.
2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions.
DB Number: DB-270
March 2015, Revision A
Page 3
TAK CHEONG ®
DISCLAIMER NOTICE
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make
changes without notice for the specification of the products displayed herein.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not
designed to be used with equipment or devices which require high level of reliability and the malfunction of with
would directly endanger human life (such as medical instruments, transportation equipment, aerospace
machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor
Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such
improper use of sale.
This publication supersedes & replaces all information reviously supplied. For additional information, please visit
our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance.
Number: DB-100
April 14, 2008 / A
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