EGP10F [TAYCHIPST]
Glass Passivated High Efficient Plastic Rectifiers; 玻璃钝化高效塑料整流器型号: | EGP10F |
厂家: | SHENZHEN TAYCHIPST ELECTRONIC CO., LTD |
描述: | Glass Passivated High Efficient Plastic Rectifiers |
文件: | 总2页 (文件大小:2506K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
EGP10A THRU EGP10M
50V-1000V 1.0A
Glass Passivated High Efficient Plastic Rectifiers
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
EGP EGP EGP EGP EGP EGP EGP EGP
Type Number
Units
10A 10B 10D 10F 10G 10J 10K 10M
50 100 200 300 400 600 800 1000
35 70 140 210 280 420 560 700
50 100 200 300 400 600 800 1000
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375” (9.5mm) Lead Length
@TA = 55℃
1.0
A
I(AV)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
30.0
A
V
IFSM
Maximum Instantaneous Forward Voltage
@ 1.0A
0.95
20
1.25
1.7
75
VF
Maximum DC Reverse Current @ TA=25℃
at Rated DC Blocking Voltage @ TA=125℃
5.0
100.0
uA
uA
IR
Maximum Reverse Recovery Time ( Note 1 )
Trr
50
nS
pF
TJ=25
℃
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Cj
RθJA
TJ
15
°
70
C/W
°
-65 to + 150
-65 to + 150
C
Storage Temperature Range
°
C
T
STG
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
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E-mail: sales@taychipst.com
Web Site: www.taychipst.com
EGP10A THRU EGP10M
50V-1000V 1.0A
Glass Passivated High Efficient Plastic Rectifiers
RATINGS AND CHARACTERISTICS CURVES
EGP10A THRU EGP10M
1.0
30
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
25
20
15
10
5
0.5
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
0
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles at 60 Hz
Lead Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
1000
100
Pulse Width = 300 μs
1 % Duty Cycle
100
TJ = 150 °C
10
TJ = 150 °C
10
1
TJ = 25 °C
TJ = 100 °C
1
0.1
0.1
TJ = 25 °C
EGP10A thru EGP10D
EGP10F and EGP10G
0.01
0.01
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
100
70
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
60
50
40
30
20
10
0
10
1
EGP10A thru EGP10D
EGP10F and EGP10G
0.1
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Reverse Voltage (V)
Fig. 6 - Typical Transient Thermal Impedance
Fig. 5 - Typical Junction Capacitance
E-mail: sales@taychipst.com
Web Site: www.taychipst.com
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