ES2D [TAYCHIPST]

SURFACE MOUNT SUPER FAST RECTIFIERS; 表面装载超快速整流器


型号：	ES2D
厂家：	SHENZHEN TAYCHIPST ELECTRONIC CO., LTD
描述：	SURFACE MOUNT SUPER FAST RECTIFIERS 表面装载超快速整流器二极管光电二极管功效
文件：	总2页 (文件大小：1399K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ES2A THRU ES2J

50V-600V 2.0A

SURFACE MOUNT SUPER FAST RECTIFIERS

Features

•

For surface mount applications.

• Glass passivated junction.

• Low profile package.

• Easy pick and place.

• Built-in strain relief.

• Superfast recovery times for

high efficiency.

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

Average Rectified Current

.375 " lead length @ T_A= 110°C

Peak Forward Surge Current

8.3 ms single half-sine-wave

Superimposed on rated load (JEDEC method)

Total Device Dissipation

2.0

i_f(surge)

P_D

1.66

13.3

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient**

R_θJA

R_θJL

T_stg

T_J

°C/W

Thermal Resistance, Junction to Lead**

Storage Temperature Range

°C/W

°C

-50 to +150

Operating Junction Temperature

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Device mounted on FR-4 PCB 0.013 mm.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

100

150

105

150

200

140

200

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

100

DC Reverse Voltage

Maximum Reverse Current

@ rated V_RT_A= 25°C

T_A= 100°C

(Rated V_R)

350

µA

Maximum Reverse Recovery Time

I_F= 0.5 A, I_R= 1.0 A, I_RR= 0.25 A

Maximum Forward Voltage @ 2.0 A

0.90

Typical Junction Capacitance

V_R= 4.0 V, f = 1.0 MHz

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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ES2A THRU ES2J

50V-600V 2.0A

SURFACE MOUNT SUPER FAST RECTIFIERS

0.75

2.0

T_j= 25°C

Pulse width = 300µs

1.6

1.0

1.2

0.8

0.4

0.1

0.01

100

125

150

175

0.4

0.8

1.2

1.6

T_T, TERMINAL TEMPERATURE (°C)

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

Fig. 1 Forward Current Derating Curve

1000

Single Half-Sine-Wave

(JEDEC Method)

T_j= 125°C

100

T_j= 25°C

1.0

0.1

120

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Surge Current Derating Curve

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 50/100 ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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