HAL1566SU [TDK]
霍尔开关;型号: | HAL1566SU |
厂家: | TDK ELECTRONICS |
描述: | 霍尔开关 开关 |
文件: | 总34页 (文件大小:468K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Hardware
Documentation
Data Sheet
APdrevlaimncinearInyfDoramtaatSiohneet
HAL® 156y
Hall-Effect Switches
with Current Interface (2-wire)
in SOT23 Package
Edition March 30, 2022
Edition Sept. 285, 2015
DSH000194_004EN
APID000000118844__000011EEN
DATA SHEET
HAL 156y
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document are believed to be accurate and reli-
able. The software and proprietary information contained therein may be protected by
copyright, patent, trademark and/or other intellectual property rights of TDK-Micronas. All
rights not expressly granted remain reserved by TDK-Micronas.
TDK-Micronas assumes no liability for errors and gives no warranty representation or
guarantee regarding the suitability of its products for any particular purpose due to these
specifications.
By this publication, TDK-Micronas does not assume responsibility for patent infringe-
ments or other rights of third parties which may result from its use. Commercial condi-
tions, product availability and delivery are exclusively subject to the respective order con-
firmation.
Any information and data which may be provided in the document can and do vary in dif-
ferent applications, and actual performance may vary over time.
All operating parameters must be validated for each customer application by customers’
technical experts. Any mention of target applications for our products is made without a
claim for fit for purpose as this has to be checked at system level.
Any new issue of this document invalidates previous issues. TDK-Micronas reserves the
right to review this document and to make changes to the document’s content at any time
without obligation to notify any person or entity of such revision or changes. For further
advice please contact us directly.
Do not use our products in life-supporting systems, military, aviation, or aerospace appli-
cations! Unless explicitly agreed to otherwise in writing between the parties, TDK-Micro-
nas’ products are not designed, intended or authorized for use as components in systems
intended for surgical implants into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the product could create a
situation where personal injury or death could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system
or transmitted without the express written consent of TDK-Micronas.
TDK-Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names may be trademarks of their
respective companies.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
2
DATA SHEET
HAL 156y
Contents
Page
Section
Title
4
1.
Introduction
5
1.1.
Features of HAL 156y
6
2.
Ordering Information
6
2.1.
Device-Specific Ordering Codes
8
9
9
3.
3.1.
3.1.1.
Functional Description of HAL 156y
Functional Safety According to ISO 26262
Diagnostic Features
10
10
12
12
13
14
14
15
15
15
16
18
20
22
24
26
28
4.
4.1.
4.2.
4.2.1.
4.3.
Specifications
Outline Dimensions
Soldering, Welding and Assembly
SOT23 Footprint for Reflow and Wave Soldering
Pin Connections (from Top Side, example HAL 1564) and Short Descriptions
Dimension and Position of Sensitive Area
Absolute Maximum Ratings
4.4.
4.5.
4.6.
4.7.
4.8.
ESD and Latch-up
Storage and Shelf Life
Recommended Operating Conditions
Electrical Characteristics
HAL 1561 Magnetic Characteristics
HAL 1562 Magnetic Characteristics
HAL 1563 Magnetic Characteristics
HAL 1564 Magnetic Characteristics
HAL 1565 Magnetic Characteristics
HAL 1566 Magnetic Characteristics
4.9.
4.10.
4.11.
4.12.
4.13.
4.14.
4.15.
30
30
31
32
33
33
5.
Application Notes
Application Circuits
5.1.
5.1.1.
5.2.
5.3.
5.4.
ESD System Level Application Circuit (ISO10605-2008)
Ambient Temperature
Start-Up Behavior
EMC and ESD
34
6.
Document History
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
Hall-Effect Switches with Current Interface (2-wire) in SOT23 Package
Release Note: Revision bars indicate significant changes to the previous edition.
1. Introduction
The HAL 156y Hall-switch family members produced in CMOS technology as 2-wire
devices with current interface include a temperature-compensated Hall plate with active
offset compensation, a comparator, and a current source.
The comparator compares the actual magnetic flux through the Hall plate (Hall voltage)
with the fixed reference values (switching points). Accordingly the current source is
switched on or off.
The active offset compensation leads to constant magnetic characteristics over supply
voltage and temperature range. In addition, the magnetic parameters are robust against
mechanical stress effects.
The sensors are designed for industrial and automotive applications and operate with
supply voltages from 3 V to 24 V in the junction temperature range from 40 C up to
170 C.
HAL 156y is available in a JEDEC TO236-compliant SMD-package 3-lead SOT23.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
1.1. Features of HAL 156y
– SOT23-3L JEDEC TO236-compliant package
– ISO 26262 compliant as ASIL B ready device
– Current interface
– Operates from 3 V to 24 V supply voltage
– Overvoltage protection capability up to 40 V
– Reverse-voltage protected VSUP-pin (18 V)
– High ESD performance up to 8 kV (HBM)
– Thermal shutdown
– Sample frequency of 500 kHz, 2 µs output refresh time
– Operates with static and dynamic magnetic fields up to 12 kHz
– High resistance to mechanical stress by active offset compensation
– Constant switching points over a wide supply voltage and temperature range
– Wide junction temperature range from 40 °C to 170 °C
– Built-in temperature coefficient
– Optimized for applications in extreme automotive and industrial environments
– Qualified according to AEC-Q100 test standard for automotive electronics industry to
provide high-quality performance
– Robust EMC performance, corresponding to different standards, such as ISO 7637,
ISO 16750, IEC 61967, ISO 11452, and ISO 62132
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
2. Ordering Information
A Micronas device is available in a variety of delivery forms. They are distinguished by a
specific ordering code:
XXXNNNNPA-T-C-P-Q-SP
Further Code Elements
Temperature Range
Package
Product Type
Product Group
Fig. 2–1: Ordering Code Principle
For a detailed information, please refer to the brochure:
“Sensors and Controllers: Ordering Codes, Packaging, Handling”.
2.1. Device-Specific Ordering Codes
HAL 156y is available in the following package and temperature range.
Table 2–1: Available packages
Package Code (PA)
Package Type
SU
SOT23
Table 2–2: Available temperature ranges
Temperature Code (T)
Temperature Range
T = 40 °C to 170 °C
A
J
The relationship between ambient temperature (TA) and junction temperature (TJ) is
explained in Section 5.2. on page 32.
For available variants for Configuration (C), Packaging (P), Quantity (Q) and Special
Procedure (SP) please contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
Table 2–3: Available ordering codes
Available Ordering Codes
HAL1561SU-A-[C-P-Q-SP]
HAL1562SU-A-[C-P-Q-SP]
HAL1563SU-A-[C-P-Q-SP]
HAL1564SU-A-[C-P-Q-SP]
HAL1565SU-A-[C-P-Q-SP]
HAL1566SU-A-[C-P-Q-SP]
This data sheet is valid for HAL 156y derivatives with an underlined trace code, as shown in
the example below.
Table 2–4: Example for Product Marking
Package Top Surface Marking
Package Bottom Surface Marking
1561
0001
1561 = Product Type
0001 = Trace Code
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
3. Functional Description of HAL 156y
The HAL 156y sensors are monolithic integrated circuits which switch in response to
magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is
applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this
field. The Hall voltage is compared with the actual threshold level in the comparator. If
the magnetic field exceeds the threshold levels, the current source is switched to the
appropriate state.
The built-in hysteresis eliminates oscillation and provides switching behavior without
bouncing.
Offsets caused by mechanical stress are compensated by using the “switching offset
compensation technique”.
A diode on the supply line is not required thanks to the built-in reverse voltage protection.
The current source is forced to a safe, error current level (ISUP), in any of the following fault
conditions: overtemperature and functional safety related diagnoses (see Section 3.1.).
The device is able to withstand a maximum supply voltage of 24 V over lifetime and
features overvoltage capability (40 V load dump).
Reverse
Voltage &
ESD
Temperature
Dependent
Bias
Overtemperature
Protection
Hysteresis
Control
VSUP
Protection
Hall Plate
Comparator
Current
Source
Switch
AUX
Functional
Safety
Features
GND
Fig. 3–1: HAL 156y block diagram
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
3.1. Functional Safety According to ISO 26262
The HAL 156y is ISO 26262 compliant as an ASIL B ready device.
Magnetic and switching performance is defined as hardware safety requirement.
The safe state is defined as error current level and is specified in Section 4.9. on page 16.
3.1.1. Diagnostic Features
Internal states are monitored and in an error condition flagged as error current:
– Internal voltage regulator: overvoltage detection
– Monitoring of internal bias and current levels
– Monitoring of the internal reference voltage
– Monitoring of the Hall plate voltage
Note
For further documentation regarding functional safety please contact
TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4. Specifications
4.1. Outline Dimensions
D
A
H
x
Bd
c
Center of sensitive area
3
B
1
2
3x b
0
e
0.25
e1
BASE METAL
SECTION "B-B"
0.10 C 3x
b1
b
SEATING PLANE
WITH PLATING
C
0
1.25
2.5mm
physical dimensions do not include moldflash.
scale
A4, Bd, x, y= these dimensions are different for each sensor type and are specified in the data
sheet.
b
UNIT
A
A1
A2
A3
b1
c
c1
D
E
E1
e
e1
L
L1
0
0.3
0.48
1.10
max.
0.05
0.10
0.88
1.02
0.3
0.45
0.1
0.18
0.1
0.15
2.8
3.0
2.1
2.5
1.2
1.4
0.4
0.6
0°
8°
mm
0.5
0.95
1.9
0.55
JEDEC STANDARD
ISSUE DATE
YY-MM-DD
ANSI
DRAWING-NO.
ZG-NO.
ISSUE
-
ITEM NO.
ZG001101_Ver.01
TO-236
13-05-10
06902.0001.4
© Copyright 2007 Micronas GmbH, all rights reserved
Fig. 4–1:
SOT23: Plastic Small Outline Transistor package, 3 leads
Ordering code: SU
Weight approximately is 0.01094 g
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4
2
3.15
4
user direction of feed
1.25
18.2 max
Devices per Reel:10000
12 min
IEC STANDARD
ISSUE DATE
YY-MM-DD
ANSI
DRAWING-NO.
ZG-NO.
ISSUE
4th
ITEM NO.
60286-3
ZG002042_Ver.02
15-09-23
06839.0001.4 Bl.1
© Copyright 2015 TDK-Micronas GmbH, all rights reserved
Fig. 4–2:
SOT23: Tape & Reel Finishing
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4.2. Soldering, Welding and Assembly
Information related to solderability, welding, assembly, and second-level packaging is
included in the document “Guidelines for the Assembly of Micronas Packages”.
It is available on the TDK-Micronas website (http://www.micronas.com/en/service-center/
downloads) or on the service portal (http://service.micronas.com).
4.2.1. SOT23 Footprint for Reflow and Wave Soldering
0.8
0.8
1.2
0.8
Fig. 4–3: SOT23 footprint for reflow soldering
0.8
0.8
1.2
0.8
Transport Direction
Fig. 4–4: SOT23 footprint for wave soldering
All dimensions in mm.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4.3. Pin Connections (from Top Side, example HAL 1564) and Short
Descriptions
GND
3
1564
1
2
AUX
VSUP
1 VSUP
AUX
2
3
GND
Fig. 4–5: Pin configuration
Table 4–1: Pin assignment.
Pin number
Name
VSUP
AUX1)
GND
Function
1
2
3
Supply and output
Functional test pin
Ground
1) connection to ground is recommended
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
4.4. Dimension and Position of Sensitive Area
Parameter
Min.
Typ.
Max.
Unit
µm2
mm
Dimension of sensitive area
100 x 100
0.27
A4 (denotes the distance of die to top package
surface in Z-direction)
0.24
0.37
x (denotes the nominal distance of the center of the
Bd circle to the package border in x-direction)
1.45
0.65
mm
mm
mm
y (denotes the nominal distance of the center of the
Bd circle to the package border in y-direction)
Bd (denotes the diameter of the circuit in which the
center of the sensitive area is located)
0.23
4.5. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only. Functional operation of the device at
these conditions is not implied. Exposure to absolute maximum rating conditions for
extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to
high static voltages or electric fields; however, it is advised that normal precautions
must be taken to avoid application of any voltage higher than absolute maximum-rated
voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol Parameter
TJ
Pin No Min.
Max.
Unit
Conditions
Junction temperature
range A
40
190
°C
t < 96 h1)
Tstorage Transportation/
Short-Term Storage
Temperature
55
150
°C
Device only without pack-
ing material.
VSUP
Supply voltage
1
18
28
32
40
V
V
V
t < 96 h1)
t < 5 min1)
t < 10 x 400 ms “Load-
Dump”1) with series
resistor RV > 100 .
1) No cumulative stress
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
4.6. ESD and Latch-up
Symbol
Parameter
Min. Max. Unit
Ilatch
Maximum latch-up free current at any pin
100 100
mA
(measurement according to AEC Q100-004), class 1
1)
VHBM
Human body model (according to AEC Q100-002)
Human body model (according to AEC Q100-002)
8
6
8
kV
kV
kV
kV
2)
VHBM
6
VCDM
Charged device model (according to AEC Q100-011) 1
1
VSYSTEM_LEVEL
Unpowered Gun Test (150 pF/330 or 330 pF/2 k) 15
15
according to ISO 10605-20081)3)4)
1) VSUP-pin and GND-pin
2) AUX-pin
3) Only valid with ESD System Level Application Circuit (see Fig. 5–2 on page 31)
4) Based on 3-wire HAL 15xy test results
4.7. Storage and Shelf Life
Information related to storage conditions of Micronas sensors is included in the
document “Guidelines for the Assembly of Micronas Packages”. It gives
recommendations linked to moisture sensitivity level and long-term storage.
It is available on the TDK-Micronas website (http://www.micronas.com/en/service-
center/downloads) or on the service portal (http://service.micronas.com).
4.8. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Oper-
ating Conditions” of this specification is not implied, may result in unpredictable behavior
of the device, and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
VSUP
TJ
Parameter
Pin
No.
Min.
3
Typ.
Max. Unit Conditions
Supply voltage
1
24
V
Junction temperature
range A1)
40
170
150
125
°C
t < 1000 h2)
t < 2500 h2)
t < 8000 h2)
1)
Depends on the temperature profile of the application. Please contact TDK-Micronas for life time calculations.
No cumulative stress
2)
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
4.9. Electrical Characteristics
at T = 40 C to 170 C, V
= 3.0 V to 24.0 V,
J
SUP
at Recommended Operating Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for T = 25 C and V = 12.0 V
J
SUP
Symbol Parameter
Supply
Pin Min. Typ. Max. Unit Conditions
No.
VUV
Undervoltage threshold 1
2.0
2.5
3.0
5
V
ISUPlo
Low supply current 1
1
mA valid for:
HAL 1564 and HAL 1565
ISUPlo
Low supply current 2
1
5
7
mA valid for:
HAL 1561, HAL 1562,
HAL 1563, and HAL 1566
ISUP
Error current
1
0.8
0.8
1.9
2.2
mA valid for:
HAL 1564 and HAL 1565
mA valid for:
HAL 1561, HAL 1562,
HAL 1563, and HAL 1566
ISUPhi
ISUPR
Port Output
Bnoise Effective noise of
High supply current
1
1
12
17
mA
mA for VSUP = 18 V
Reverse current
0.6
72
µT
For square wave signal with
magnetic switching
12 kHz
points (RMS)2)
tj
Output jitter (RMS)1)
0.58 0.72 µs
For square wave signal with
1 kHz. Jitter is evenly dis-
tributed between 1 µs and
+1 µs
td
Delay time2)3)
16
2.2
50
21
3.0
60
µs
µs
µs
tsamp
ten
Output refresh period2)
1.6
20
Enable time of output
after exceeding of VUV
VSUP = 12 V
B > Bon + 2 mT or
B < Boff 2 mT
1)
Characterized on small sample size, not tested
Guaranteed by design
Systematic delay between magnetic threshold reached and output switching
2)
3)
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
Symbol Parameter
Package
Pin Min. Typ. Max. Unit Conditions
No.
Rthja
Thermal Resistance
junction to air
300
250
210
30
K/W Determined with a 1s0p
board
K/W Determined with a 1s1p
board
K/W Determined with a 2s2p
board
Rthjc
Thermal Resistance
junction to case
K/W Determined with a 1s0p
board
50
K/W Determined with a 1s1p
board
40
K/W Determined with a 2s2p
board
TDK-Micronas GmbH
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DATA SHEET
HAL 156y
4.10. HAL 1561 Magnetic Characteristics
The HAL 1561 Hall-latch provides high sensitivity (see Fig. 4–6 on page 18).
The output turns to low current consumption (ISUPlo) with the magnetic north pole on the
top side of the package and turns to high current consumption (ISUPhi) with the magnetic
south pole on the top side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic field polarity must be applied.
For correct functioning in the application, the sensor requires both magnetic polarities
(north and south) on the top side of the package.
Magnetic Features:
– switching type: latching
– high sensitivity
– typical BON: 4.0 mT at room temperature
– typical BOFF: 4.0 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 0 ppm/K
Applications
The HAL 1561 is the optimal sensor for applications with alternating magnetic fields,
such as:
– seat position detection
– break-by-wire
– electric sunroof
– window lifter
– motor commutation
Current consumption
I
SUPhi
B
HYS
I
SUPlo
B
B
0
B
ON
OFF
Fig. 4–6: Definition of magnetic switching points for the HAL 1561
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DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24.0 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
2.0
Typ.
4.0
Max. Min.
Typ.
4.0
4.0
4.0
Max. Min.
Typ.
8.0
Max.
40 C
25 C
7.0
7.0
7.0
7.0
7.0
7.0
2.0
2.0
2.0
mT
mT
mT
2.0
4.0
8.0
170 C
2.0
4.0
8.0
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4.11. HAL 1562 Magnetic Characteristics
The HAL 1562 Hall-latch provides medium sensitivity (see Fig. 4–7 on page 20).
The output turns to low current consumption (ISUPlo) with the magnetic north pole on the
top side of the package and turns to high current consumption (ISUPhi) with the mag-
netic south pole on the top side. The output does not change if the magnetic field is
removed. For changing the output state, the opposite magnetic field polarity must be
applied.
For correct functioning in the application, the sensor requires both magnetic polarities
(north and south) on the top side of the package.
Magnetic Features:
– switching type: latching
– medium sensitivity
– typical BON: 12.0 mT at room temperature
– typical BOFF: 12.0 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 0 ppm/K
Applications
The HAL 1562 is the optimal sensor for applications with alternating magnetic fields,
such as:
– seat position detection
– break-by-wire
– electric sunroof
– window lifter
Current consumption
I
SUPhi
B
HYS
I
SUPlo
B
B
0
B
ON
OFF
Fig. 4–7: Definition of magnetic switching points for the HAL 1562
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DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24.0 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
7.0
Typ.
12.0
12.0
12.0
Max. Min.
Typ.
Max. Min.
Typ.
24.0
24.0
24.0
Max.
40 C
25 C
17.0
17.0
17.0
17.0 12.0 7.0
17.0 12.0 7.0
17.0 12.0 7.0
mT
mT
mT
7.0
170 C
7.0
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
4.12. HAL 1563 Magnetic Characteristics
The unipolar inverted HAL 1563 Hall-switch provides high sensitivity (see Fig. 4–8 on
page 22).
The sensor turns to low current consumption (ISUPlo) with the magnetic south pole on
the top side of the package and turns to high current consumption (ISUPhi) if the mag-
netic field is removed. It does not respond to the magnetic north pole on the top side of
the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar inverted
– high sensitivity
– typical BON: 7.6 mT at room temperature
– typical BOFF: 9.4 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 0 ppm/K
Applications
The HAL 1563 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position where an inverted output signal is
required, such as:
– applications with large air gap or weak magnets
– brake pedal position detection (brake light switch)
– seat belt presence detection
– seat position detection,
– break fluid level switch
Current consumption
I
SUPhigh
B
HYS
I
SUPlow
0
B
B
B
ON
OFF
Fig. 4–8: Definition of magnetic switching points for the HAL 1563
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March 30, 2022; DSH000194_004EN
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DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24.0 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
5.5
Typ.
7.6
Max. Min.
Typ.
9.4
Max. Min.
Typ.
1.8
Max.
40 C
25 C
10.5
10.0
10.5
7.0
7.0
7.0
12.0
11.5
12.0
mT
mT
mT
5.8
7.6
9.4
1.8
170 C
5.5
7.6
9.4
1.8
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
23
DATA SHEET
HAL 156y
4.13. HAL 1564 Magnetic Characteristics
The unipolar inverted HAL 1564 Hall-switch provides high sensitivity (see Fig. 4–9 on
page 24).
The sensor turns to low current consumption (ISUPlo) with the magnetic south pole on
the top side of the package and turns to high current consumption (ISUPhi) if the mag-
netic field is removed. It does not respond to the magnetic north pole on the top side of
the package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar inverted
– high sensitivity
– typical BON: 4.1 mT at room temperature
– typical BOFF: 6.0 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K
Applications
The HAL 1564 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position where an inverted output signal is
required, such as:
– applications with large air gap or weak magnets
– brake pedal position detection (brake light switch)
– seat belt presence detection
– seat position detection
– break fluid level switch
Current consumption
I
SUPhigh
B
HYS
I
SUPlow
0
B
B
B
ON
OFF
Fig. 4–9: Definition of magnetic switching points for the HAL 1564
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
24
DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
3.2
Typ.
4.5
Max. Min.
Typ.
6.4
Max. Min.
Typ.
1.9
Max.
40 C
25 C
6.7
6.1
6.4
5.0
4.3
3.7
8.5
7.7
7.7
mT
mT
mT
2.9
4.1
6.0
1.9
170 C
2.4
4.0
5.6
1.6
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
25
DATA SHEET
HAL 156y
4.14. HAL 1565 Magnetic Characteristics
The unipolar HAL 1565 is a high-sensitive unipolar switching sensor (see Fig. 4–10 on
page 26).
The sensor turns to high current consumption (ISUPhi) with the magnetic south pole on
the top side of the package and turns to low current consumption (ISUPlo) if the magnetic
field is removed. It does not respond to the magnetic north pole on the top side of the
package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– high sensitivity
– typical BON: 6.0 mT at room temperature
– typical BOFF: 4.1 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 1000 ppm/K
Applications
The HAL 1565 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position, such as:
– seat belt presence detection
– flow measurement
– door lock
– roof top open/close
Current Consumption
ISUPhi
BHYS
ISUPlo
0
BOFF
BON
B
Fig. 4–10: Definition of magnetic switching points for the HAL 1565
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
26
DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24.0 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
5.0
Typ.
6.4
Max. Min.
Typ.
4.5
Max. Min.
Typ.
1.9
Max.
40 C
25 C
8.5
7.7
7.7
3.2
2.9
2.4
6.7
6.1
6.4
mT
mT
mT
4.3
6.0
4.1
1.9
170 C
3.7
5.6
4.0
1.9
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
27
DATA SHEET
HAL 156y
4.15. HAL 1566 Magnetic Characteristics
The unipolar HAL 1566 is a high-sensitive unipolar switching sensor (see Fig. 4–11 on
page 28).
The sensor turns to high current consumption (ISUPhi) with the magnetic south pole on
the top side of the package and turns to low current consumption (ISUPlo) if the magnetic
field is removed. It does not respond to the magnetic north pole on the top side of the
package.
For correct functioning in the application, the sensor requires only the magnetic south
pole on the top side of the package.
Magnetic Features:
– switching type: unipolar
– high sensitivity
– typical BON: 9.4 mT at room temperature
– typical BOFF: 7.6 mT at room temperature
– operates with static magnetic fields and dynamic magnetic fields up to 12 kHz
– typical temperature coefficient of magnetic switching points is 0 ppm/K
Applications
The HAL 1566 is the optimal sensor for all applications with one magnetic polarity and
weak magnetic amplitude at the sensor position, such as:
– seat belt presence detection
– seat position
– electric sun roof
– gear shift lever
Current Consumption
I
SUPhi
B
HYS
I
SUPlo
0
B
B
B
OFF
ON
Fig. 4–11: Definition of magnetic switching points for the HAL 1566
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
28
DATA SHEET
HAL 156y
Magnetic Characteristics
at TJ = 40 C to 170 C, VSUP = 3.0 V to 24.0 V,
Typical Characteristics for VSUP = 12.0 V
Magnetic flux density values of switching points:
Positive flux density values refer to the magnetic south pole at the top side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Unit
Min.
7.0
Typ.
9.4
Max. Min.
Typ.
7.6
Max. Min.
Typ.
1.8
Max.
40 C
25 C
12.0
11.5
12.0
5.5
5.8
5.5
10.5
10.0
10.5
mT
mT
mT
7.3
9.4
7.6
1.8
170 C
7.0
9.4
7.6
1.8
The hysteresis is the difference between the switching points BHYS = BON BOFF
Note
Regarding switching points, temperature coefficients and B-field switching
frequency, customized derivatives via mask option are possible. For more
information contact TDK-Micronas.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
29
DATA SHEET
HAL 156y
5. Application Notes
5.1. Application Circuits
For applications with disturbances on the supply line or radiated disturbances, a series
resistor RV and a capacitor CP both placed close to the sensor are recommended (see
Fig. 5–1). In this case, the maximum RL can be calculated as:
VBATTmin – VSUPmin
------------------------------------------------
– RV
RLmax
=
ISUPhimax
For example: RV =100 and CP = 47 nF
R
V
V
SUP
V
BATT
V
SIG
C
P
R
L
Fig. 5–1: Example application circuit
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
30
DATA SHEET
HAL 156y
5.1.1. ESD System Level Application Circuit (ISO10605-2008)
For an ESD system level application circuit according to ISO10605-2008 a 100 nF
capacitor at VSUP is necessary.
V
SUP
1)
R =100
V
C = 100 nF
P
GND
required for 40 V load dump capability
1)
Fig. 5–2: Application circuit with external resistor
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
31
DATA SHEET
HAL 156y
5.2. Ambient Temperature
Due to the internal power dissipation, the temperature on the silicon chip (junction temper-
ature TJ) is higher than the temperature outside the package (ambient temperature TA).
TJ = TA + T
Under static conditions and continuous operation, the following equation applies:
thigh
tlow
--------------
tperiod
--------------
tperiod
T = ISUPhi
+ ISUPlo t
VSUP Rthja
For all sensors, the junction temperature range TJ is specified. The maximum ambient
temperature TAmax can be calculated as:
TAmax = TJmax – T
For typical values, use the typical parameters. For worst case calculation, use the max.
parameters according to the application conditions.
Example calculation for T with ISUPhi=17 mA (thigh=20%), ISUPlo=7 mA (tlow=80%),
V
SUP=5 V, Rth=300 K/W
T= 0.017 A 0,2 + 0.007 A 0,8 5 V 300 K/W= 13.5 K
TAmax = 170 °C – 13.5 °C= 156.5 °C
For 2-wire devices self-heating can be critical due to the range of ISUPhi. The junction
temperature can be reduced with pulsed supply voltage. For supply times (ton) of e.g.
120 s, the following equation can be used:
ton
-------------------
T = ISUPhi VSUP Rthja
toff + ton
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
32
DATA SHEET
HAL 156y
5.3. Start-Up Behavior
For supply voltages below the undervoltage threshold VUV, the current consumption is
undefined. After exceeding VUV, the sensor has an enable time (ten). During the enable
time, the current consumption is defined as error current (ISUP).
After ten, the current consumption will be ISUPhi if the applied magnetic field B is above
BON. The current consumption will be ISUPlo if B is below BOFF. In case of sensors with an
inverted switching behavior, the current consumption will be ISUPlow if B > BOFF and ISUPhi
if B < BON.
After ten and magnetic fields between BOFF and BON, the current consumption of the
HAL 156y sensor will be either ISUPhi or ISUPlo. Any transition of magnetic switching points
above BON, respectively, below BOFF will change the corresponding current consumption.
5.4. EMC and ESD
For applications with disturbances on the supply line or radiated disturbances, a series
resistor and a capacitor are recommended. The series resistor and the capacitor should
be placed as closely as possible to the HAL sensor.
Special application arrangements were evaluated to pass EMC tests according to differ-
ent standards, such as ISO 7637, ISO 16750, IEC 61967, ISO 11452 and ISO 62132.
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
33
DATA SHEET
HAL 156y
6. Document History
1. Data Sheet: “HAL 156y, Hall-Effect Switches with Current Interface (2-wire) in SOT23 Package,
Feb. 27, 2018; DSH000194_001EN. First release of the Data Sheet.
2. Data Sheet: “HAL 156y, Hall-Effect Switches with Current Interface (2-wire) in SOT23 Package”,
Sept. 6, 2018; DSH000194_002EN. Second release of the Data Sheet.
Major change:
– Table 2–4 on page 7: ‘Example for Product Marking’ updated
3. Data Sheet: “HAL 156y, Hall-Effect Switches with Current Interface (2-wire) in SOT23 Package”,
May 4, 2020; DSH000194_003EN. Third release of the Data Sheet.
Major changes:
– Disclaimer updated
– Section 4.9 Characteristics:
Error current ISUP: Max value changed to 1.9 mA for HAL 1564 and HAL 1565
4. Data Sheet: “HAL 156y, Hall-Effect Switches with Current Interface (2-wire) in SOT23 Package”,
March 30, 2022; DSH000194_004EN. Fourth release of the Data Sheet.
Major changes:
– ASIL A to ASIL B changed
– Tape & Reel Finishing (see Fig. 4–2 on page 11) updated
TDK-Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 www.micronas.tdk.com
TDK-Micronas GmbH
March 30, 2022; DSH000194_004EN
34
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