HAL1880UA_技术文档

Hardware

Documentation

Data Sheet

®

HAL 1880

Programmable Linear Hall-Effect

Sensor in TO92 Package

Edition Sept. 8, 2020

DSH000198_003EN

DATA SHEET

HAL 1880

Copyright, Warranty, and Limitation of Liability

The information and data contained in this document are believed to be accurate and reli-

able. The software and proprietary information contained therein may be protected by

copyright, patent, trademark and/or other intellectual property rights of TDK-Micronas. All

rights not expressly granted remain reserved by TDK-Micronas.

TDK-Micronas assumes no liability for errors and gives no warranty representation or

guarantee regarding the suitability of its products for any particular purpose due to

these specifications.

By this publication, TDK-Micronas does not assume responsibility for patent infringements

or other rights of third parties which may result from its use. Commercial conditions, prod-

uct availability and delivery are exclusively subject to the respective order confirmation.

Any information and data which may be provided in the document can and do vary in

different applications, and actual performance may vary over time.

All operating parameters must be validated for each customer application by customers’

technical experts. Any mention of target applications for our products is made without a

claim for fit for purpose as this has to be checked at system level.

Any new issue of this document invalidates previous issues. TDK-Micronas reserves

the right to review this document and to make changes to the document’s content at any

time without obligation to notify any person or entity of such revision or changes. For

further advice please contact us directly.

Do not use our products in life-supporting systems, military, aviation, or aerospace

applications! Unless explicitly agreed to otherwise in writing between the parties,

TDK-Micronas’ products are not designed, intended or authorized for use as compo-

nents in systems intended for surgical implants into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the

product could create a situation where personal injury or death could occur.

No part of this publication may be reproduced, photocopied, stored on a retrieval sys-

tem or transmitted without the express written consent of TDK-Micronas.

TDK-Micronas Trademarks

– HAL

Third-Party Trademarks

All other brand and product names or company names may be trademarks of their

respective companies.

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Contents

Page

Section

Title

4

5

1.

1.1.

1.2.

Introduction

Major Applications

Features

6

2.

Ordering Information

6

2.1.

Device-Specific Ordering Codes

7

3.

Functional Description

7

3.1.

General Function

8

9

3.2.

Digital Signal Processing and EEPROM

Digital Output Register

Output Scaling Register

3.2.1.

3.2.2.

3.2.3.

3.2.4.

3.2.5.

3.2.6.

3.3.

10

12

13

14

15

Micronas ID Number Registers

Customer Setup 1 Registers

Customer Setup 2 Register

Signal Path

On-Board Diagnostic Features

Sensor Calibration

3.4.

3.4.1.

3.4.2.

General Procedure for Development or Evaluation Purposes

Locking the Sensor

16

20

21

22

23

26

27

28

29

4.

4.1.

4.2.

4.3.

Specifications

Outline Dimensions

Soldering, Welding and Assembly

Pin Connections and Short Descriptions

Dimensions of Sensitive Area

Output/Magnetic-Field Polarity

Absolute Maximum Ratings

Storage and Shelf Life

4.4.

4.5.

4.6.

4.7.

4.8.

4.9.

Recommended Operating Conditions

Characteristics

4.9.1.

4.10.

4.11.

4.12.

4.12.1.

Definition of t

POD

Power-On Reset / Undervoltage Detection

Output Voltage in Case of Error Detection

Magnetic Characteristics

Definition of Sensitivity Error ES

30

31

32

5.

Application Notes

Ambient Temperature

EMC

Application Circuit

Temperature Compensation

5.1.

5.2.

5.3.

5.4.

33

34

6.

Programming of the Sensor

Programming Interface

Programming Environment and Tools

Programming Information

6.1.

6.2.

6.3.

35

7.

Document History

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

Release Note:

Revision bars indicate significant changes to the previous edition.

Programmable Linear Hall-Effect Sensor in TO92 Package

1. Introduction

The HAL 1880 is a universal programmable Hall-effect sensor with a ratiometric, linear

analog output proportional to the magnetic flux density applied to the sensor surface.

The sensor can be used for magnetic-field measurements such as current measure-

ments and detection of mechanical movement, like for small-angle or distance mea-

surements. The sensor is robust and can be used in harsh electrical and mechanical

environments.

Major characteristics like magnetic-field range, sensitivity, offset (output voltage at zero

magnetic field) and the temperature coefficients are programmable in a non-volatile

memory. Several output signal clamping levels can be programmed. Diagnostic fea-

tures are implemented to indicate various fault conditions like undervoltage, under-/

overflow or overtemperature.

The HAL 1880 is programmable by modulating the supply voltage with a serial telegram on

the sensor’s output pin or supply pin. No additional programming pin is needed. Several

sensors on the same supply line can be programmed individually (communication through

OUT pins). This programmability allows a 2-point calibration by adjusting the output signal

directly to the input signal, such as mechanical angle, distance or current.

Individual adjustment of each sensor during the customer’s manufacturing process is

possible. With this calibration procedure, the tolerance of the sensor, the magnet and

the mechanical positioning can be compensated in the final assembly.

The spinning-current offset compensation leads to stable magnetic characteristics over

supply voltage and temperature. Furthermore, the first and seconds order temperature

coefficients of the sensor sensitivity can be used to compensate the temperature drift of

all common magnetic materials. This enables operation over the full temperature range

with high accuracy.

The calculation of the individual sensor characteristics and the programming of the

EEPROM memory can easily be done with a PC and the application kit from

TDK-Micronas.

The sensor is designed for industrial and automotive applications, is AEC-Q100 quali-

fied, and operates in the junction temperature range from –40 °C up to 170 °C. The

HAL 1880 is available in the very small leaded package TO92UA-1 and TO92UA-2.

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DATA SHEET

HAL 1880

1.1. Major Applications

Thanks to the sensor's robust and cost-effective design, the HAL 1880 is the optimal

system solution for applications such as:

– Small-angle or linear position measurements

– Gear position detection in transmission application

– Current sensing for battery management

– Rotary selector

1.2. Features

– Ratiometric linear output proportional to the magnetic field

– Digital signal processing

– Continuous measurement ranges from 20 mT to 160 mT

– Selectable clamping levels with selectable diagnosis

– Comprehensive diagnostic feature set

– Lock function and built-in redundancy for EEPROM memory

– Programmable temperature characteristics for matching all common magnetic materials

– Programming via output pin or supply voltage modulation

– On-chip temperature compensation

– Active offset compensation

– Operates from 40 °C up to 170 °C junction temperature

– Operates from 4.5 V up to 5.5 V supply voltage in specification

– Operates with static and dynamic magnetic fields up to 5 kHz

– Selectable sampling frequency (8 kHz or 16 kHz)

– Overvoltage and reverse-voltage protection at VSUP pin

– Magnetic characteristics extremely robust against mechanical stress

– Short-circuit protected push-pull output

– EMC and ESD optimized design

– AEC-Q100 qualified

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

2. Ordering Information

A Micronas device is available in a variety of delivery forms. They are distinguished by a

specific ordering code:

XXXNNNNPA-T-C-P-Q-SP

Further Code Elements

Temperature Range

Package

Product Type

Product Group

Fig. 2–1: Ordering code principle

For a detailed information, please refer to the brochure: “Sensors and Controllers:

Ordering Codes, Packaging, Handling”.

2.1. Device-Specific Ordering Codes

HAL 1880 is available in the following package and temperature variants.

Table 2–1: Available packages

Package Code (PA)

Package Type

UA

TO92UA

Table 2–2: Available temperature ranges

Temperature Code (T)

Temperature Range

T = 40 °C to 170 °C

A

J

The relationship between ambient temperature (T_A) and junction temperature (T_J) is

explained in Section 5.1. on page 30.

For available variants for Configuration (C), Packaging (P), Quantity (Q), and Special

Procedure (SP) please contact TDK-Micronas.

Table 2–3: Available ordering codes and corresponding package marking

Available Ordering Codes

Package Marking

HAL 1880UA-A-[C-P-Q-SP]

1880A

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DATA SHEET

HAL 1880

3. Functional Description

3.1. General Function

The HAL1880 is a monolithic integrated circuit (IC) which provides an output voltage

proportional to the magnetic flux through the Hall plate and proportional to the supply

voltage (ratiometric behavior).

The Hall IC is sensitive to magnetic north and south polarity. This Hall voltage is converted

to a digital value, processed in the Digital Signal Processing unit (DSP) according to the

settings of the EEPROM registers, converted back to an analog voltage by a D/A converter

(DAC) and buffered by a push-pull output stage. Selectable clamping levels for the output

voltage as well as diagnostic features are available. The function and the parameter for the

DSP are explained in Section 3.2. on page 8. Internal temperature compensation circuitry

and spinning-current offset compensation enable operation over the full temperature range

with minimal degradation in accuracy and offset. The circuitry also rejects offset shifts due

to mechanical stress from the package. In addition, the sensor IC is equipped with devices

for overvoltage and reverse polarity protection at supply pin.

VSUP

Internally

stabilized

Supply and

Protection

Devices

Temperature

Dependent

Bias

Protection

Devices

Overtemperature

Detection

Undervoltage

Detection

Oscillator

50 

Digital

Signal

Processing

OUT

Switched

Hall Plate

A/D

Converter

D/A

Converter

Analog

Output

Clamping

Programming

Interface

EEPROM Memory

Diagnosis

Lock Control

GND

Fig. 3–1: HAL1880 block diagram

The IC can be programmed via supply or output pin voltage modulation. After detecting

a command, the sensor reads or writes the memory and answers with a digital signal on

the output pin. As long as the LOCK register is not set, the output characteristic can be

adjusted by programming the EEPROM registers. The LOCK register disables the pro-

gramming of the EEPROM memory. This register cannot be reset.

Furthermore, HAL1880 features an internal error detection. The following error modes

can be detected: over-/underflow in adder or multiplier, over-/underflow in A/D converter

(ADC) and overtemperature.

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DATA SHEET

HAL 1880

3.2. Digital Signal Processing and EEPROM

Hall Plate

DIAGNOSIS

DSP

Output Controller

VOUT

D/A

Converter

A/D Converter

TC

TCSQ

OFFSET

OFFSET_ALIGN

CLAM P_SP

CLEVEL

EN_ERC_HI

CLAM P_ERC

DSDOUBLE M AG_RANGE

SENSITIVITY

Customer Programmable Parameters

Fig. 3–2: Details of Programming Parameter and Digital Signal Processing

Table 3–1: Cross reference table for EEPROM register and sensor parameter

EEPROM-Register

Parameter

Data Function

Bits

Customer Setup 1

DSDOUBLE

CLEVEL

1

2

1

Sampling frequency

Output clamping values selection

Enables High and Low error band

EN_ERC_HI

TC_FINE

LOCK

Fine adjustment of linear temperature coefficient

Customer lock

Customer Setup 2

CLAMP_SP

Activates unbalanced clamping levels

OFFSET_

ALIGN

Magnetic offset alignment bit (MSB or LSB

aligned)

TCSQ

5

Quadratic temperature coefficient

Linear temperature coefficient

Available magnetic ranges

TC

5

MAG_RANGE

SENSITIVITY

OFFSET

MIC_ID_1

MIC_ID_2

3

Output Scaling

8

Magnetic sensitivity

8

Magnetic offset

Micronas ID1

Micronas ID2

16

Micronas production information (read only)

Note

For more information on the registers and the memory map of the HAL1880,

please refer to the application note “HAL1880/HAL 1890 User Manual”.

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DATA SHEET

HAL 1880

The DSP is a key function of this sensor and performs the signal conditioning. The

parameters for the DSP are stored in the EEPROM registers. Details are shown in

Fig. 3–2 on page 8.

The measurement data can be readout from the digital output register MDATA.

3.2.1. Digital Output Register

MDATA register

This 16-bit register delivers the actual digital value of the applied magnetic field after the

signal processing. This register can only be read out, and it is the basis for the calibra-

tion procedure of the sensor in the customer application. Only 10 bits of the register

contain valid data. The MDATA range is from 512 to 511.

The area in the EEPROM accessible to the customer consists of registers with a size of

16 bits each.

For SENSITIVITY = 1 the MDATA value will increase for negative magnetic fields (north

pole) on the branded side of the package (positive MDATA values).

Note

During application design, it shall be taken into consideration that the

MDATA value should not saturate in the full operational range of the specific

application.

3.2.2. Output Scaling Register

The Output Scaling register contains the bits for magnetic sensitivity (SENSITIVITY)

and magnetic offset (OFFSET).

SENSITIVITY

The SENSITIVITY bits define the parameter for the multiplier in the DSP and is program-

mable between [2...2] in steps of 0.0156. SENSITIVITY = 1 (at Offset = 0) corresponds

to full-scale (FS) of the output signal if the A/D converter value has reached the full-scale

value. The SENSITIVITY register has a resolution of 8 bits.

OFFSET

The OFFSET bits define the parameter for the adder in the DSP.

The customer can decide if the offset is MSB aligned or LSB aligned. The MSB or LSB

alignment is enabled by an additional offset alignment bit (OFFSET_ALIGN). In case this

bit is set to 1, the offset is programmable from 25% up to 25% of V_SUP. If the

OFFSET_ALIGN bit is set to zero, then the offset covers only 1/8 of the full-scale (6.25%

up to 6.25% of V_SUP) but with finer step size. The customer can adjust the offset

symmetrically around 50% of V_SUP. The OFFSET register can be set with 8-bit resolution.

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DATA SHEET

HAL 1880

3.2.3. Micronas ID Number Registers

Micronas ID Number registers contain 16 bits each. TDK-Micronas will use the registers

to store production information like wafer position, wafer number and production lot

number. These two registers can be read by the customer.

3.2.4. Customer Setup 1 Registers

The Customer Setup 1 register contains the bits to select the sampling frequency, to

enable/disable the High Error Band for error indication, and to define the output signal

clamping levels.

DSDOUBLE

The bit DSDOUBLE allows to double the sampling frequency. The permitted values are

8 kHz and 16 kHz, corresponding to a bandwidth of 2.5 kHz and 5 kHz.

CLEVEL

The 2-bit CLEVEL together with CLAMP_SP select the clamping levels, i.e. the maxi-

mum and minimum output voltage levels of the analog output. The following choices are

available {CLAMP_SP:CLEVEL}:

Table 3–2: Clamping level definition

CLAMP_SP CLEVEL

Clamping Level (%VSUP)

low

V_OUTL

5

high

V_OUTH

95

0

1

00

01

10

11

00

01

10

11

10

90

15

85

5

90

10

95

20

90

10

80

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DATA SHEET

HAL 1880

Clamping is normally not considered as an error. However, the user is able to activate

the clamping error code by setting the CLAMP_ERC bit of the Customer Setup 1 register.

In that case the output will be forced to the Low Error Band (V_{DIAG_L}) or High Error

Band (V_{DIAG_H}), as soon as the output signal reaches the programmed clamping levels.

The upper error band is realized by setting the MDATA register to maximum value. The

resulting clamping behavior therefore depends on the selection of the clamping levels,

the setting of the CLAMP_ERC bit, and the setting of the EN_ERC_HI bit (Error Code

Selection). All possible clamping variations are shown in Fig. 3–3.

Output Voltage

V_{DIAG_H}

High Error Band

High

Clamping Level

No Clamping Levels selected

Clamping Levels selected:

CLAMP_ERC = 0

CLAMP_ERC = 1 & DIS_ER_LOW = 0

CLAMP_ERC = 1 & DIS_ER_LOW = 1

Low

Clamping Level

Low Error Band

V_{DIAG_L}

Magnetic Field Amplitude

Fig. 3–3: HAL1880 clamping behavior

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DATA SHEET

HAL 1880

3.2.5. Customer Setup 2 Register

Customer Setup 2 register contains the bits for magnetic range (MAG_RANGE), linear

and quadratic temperature coefficients (TC and TCSQ), magnetic offset alignment

(OFFSET_ALIGN), unbalanced clamping levels (CLAMP_SP) and the customer lock bit.

MAG_RANGE

The MAG_RANGE bits are used to set the magnetic measurement range. The following

eight measurement ranges are available:

Table 3–3: MAG_RANGE bit definition

Magnetic-Field Range

20 mT...20 mT

Bit Setting Comment

0

1

2

3

4

5

6

7

40 mT...40 mT

60 mT...60 mT

80 mT...80 mT

100 mT...100 mT

120 mT...120 mT

140 mT...140 mT

160 mT...160 mT

TC and TCSQ

The temperature dependence of the magnetic sensitivity can be adapted to different

magnetic materials in order to compensate for the change of the magnetic strength with

temperature. The adaption is done by programming the TC (linear temperature coeffi-

cient) and the TCSQ registers (quadratic temperature coefficient). Thereby, the slope

and the curvature of the temperature dependence of the magnetic sensitivity can be

matched to the magnet and the sensor assembly. As a result, the output signal charac-

teristic can be fixed over the full temperature range. The sensor can compensate for lin-

ear temperature coefficients ranging from about 3100 ppm/K up to 2550 ppm/K and

quadratic coefficients from about

7 ppm/K²to 15 ppm/K²(typical range). Min. and max. values for the quadratic temper-

ature coefficient depend on the linear temperature coefficient. Please refer to

Section 5.4. on page 32 for the recommended settings for different linear temperature

coefficients.

Magnetic Offset Alignment Bit (OFFSET_ALIGN)

Please refer to Section 3.2.2. on page 9 (OFFSET).

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DATA SHEET

HAL 1880

LOCK

By setting this 1-bit register, all registers will be locked, and the EEPROM content can

not be changed anymore. The LOCK bit is active after the first power-off and power-on

sequence after setting the LOCK bit.

Warning This register cannot be reset!

3.2.6. Signal Path

B_IN(mT)

ADC_OUT(LSB)

V_OUT(V)

MDATA (LSB)

5 V

100 %FS

511 LSB

+B_RANGE

90 %V_SUP

B_CP1

B_CP2

10% V_SUP

0 V

0 %FS

-512 LSB

-B_RANGE

MAG_RANGE

TC & TCSQ

Clamping Level

OFFSET & OFFSET_ALIGN

SENSITIVITY

CLEVEL & CLAMP_SP

B_IN

: Magnetic Field Input

B_RANGE: Magnetic Range

B_CP1/2: Magnetic Field at Calibration Point 1/2

ADC_OUT: Output of Analog/Digital-Converter

%FS : Percentage of Full Scale

Fig. 3–4: Signal path of HAL1880 (example with 10 %FS / 90 %FS)

Fig. 3–4 shows the signal path and signal processing of HAL1880. The measurement

output value MDATA is calculated with the output value of the ADC by the following

equation.

MDATA = SENSITIVITY  ADC_OUT+ OFFSET

The parameters OFFSET and SENSITIVITY are two’s complement encoded 8-bit values

(see Section 3.2.5. on page 12).

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

3.3. On-Board Diagnostic Features

The HAL1880 features following diagnostic functions:

– Thermal supervision of the output stage (overcurrent, short circuit, etc.)

The sensor switches the output to tristate if overtemperature is detected by the ther-

mal supervision.

– Undervoltage detection with internal reset

The occurrence of an undervoltage is indicated immediately by switching the output to

V_{DIAG_L}. The output will be kept at V_{DIAG_L}after the end of an undervoltage detection

event until a correct measurement value is available. This delay time depends on the

selected sampling frequency.

– Magnetic signal amplitude out of range (overflow or underflow in ADC)

– Over-/underflow in adder or multiplier

These faults are visible at the output as long as present and will force the output to the

Low Error Band or High Error Band (see V_{DIAG_L}and V_{DIAG_H}in Section 4.11. on

page 27), depending on the source of the faults, and the customer parameter set-

tings, such as the sign of the sensitivity and the Error Code Selection bit (see Table 3–

4).

Table 3–4: Error code source and settings combinations

Settings

Source

Sign of

EN_ERC_HI A/D Converter

Adder

Multiplier

SENSITIVITY

Underflow Overflow Underflow Overflow Underflow Overflow

V_{DIAG_L}V_{DIAG_H}V_{DIAG_L}V_{DIAG_H}V_{DIAG_L}V_{DIAG_H}

V_{DIAG_H}V_{DIAG_L}V_{DIAG_H}V_{DIAG_L}

V_{DIAG_L}V_{DIAG_L}

+

1

0



V_{DIAG_L}

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DATA SHEET

HAL 1880

3.4. Sensor Calibration

3.4.1. General Procedure for Development or Evaluation Purposes

For calibration of the sensor in the customer application, the development tool kit from

TDK-Micronas is recommended. It contains the hardware for the generation of the serial

telegram during programming and the corresponding software to program the various

register values of register values.

For the individual calibration of each sensor in the final customer application, a two-

point adjustment is recommended. Please refer to “HAL 1880 / HAL 1890 User Manual”

for further details on calibration procedure.

3.4.2. Locking the Sensor

For qualification and production purpose the device has to be locked in order to guaran-

tee its functionality.

The last programming step activates the memory lock function by setting the LOCK bit.

Please note that the memory lock function becomes effective after power-down and

power-up of the Hall IC. The sensors EEPROM is then locked and its content can not

be changed nor read anymore.

Warning This register cannot be reset!

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DATA SHEET

HAL 1880

4. Specifications

4.1. Outline Dimensions

Product

long lead

short lead

HAL 187x ,8x, 9x

21ꢀ0.2 optional

15.7ꢀ0.2 standard

r

gate remain

d

L

Y

A

D

1.0

0.295ꢀ0.09

0.2

weight

0.106 g

ꢀ0.05

4.06

ꢀ0.05

1.5

0.7

connected to PIN 2

1^+0.2

connected to PIN 2

D

ꢁ

center of

sensitive area

Y

5

.

1

.

x

5

a

0

.

0

m

ꢀ

A

2

.

5

3

0

.

3

2

.

0

0.5 ⁺_-^0.1

1

3

2

ꢀ

0.08

d

1

ejector pin Ø1.5

dambar cut,

not Sn plated (6x)

a

e

L

r

a

g

n

i

d

l

e

w

r

o

r

e

ꢀ0.05

0.36

d

l

o

Sn plated

s

5

.

0

-

0

ꢀ0.05

0.43

Sn plated

ꢀ0.4

1.27

2.54

lead length cut

not Sn plated (3x)

0

2.5

5 mm

scale

Dimensions are in mm.

Physical dimensions do not include moldflash.

BACK VIEW

FRONT VIEW

Sn-thickness might be reduced by mechanical handling.

JEDEC STANDARD

SPECIFICATION

ISSUE DATE

REVISION DATE

PACKAGE

TO92UA-2

ANSI

REV.NO.

2

DRAWING-NO.

(YY-MM-DD)

ITEM NO. ISSUE

TYPE

NO.

18-09-24

20-04-07

CUAI00031033.1

ZG

2101_Ver.02

c

Fig. 4–1:

TO92UA-2 Plastic Transistor Standard UA package, 3 leads, non-spread

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Product

long lead

short lead

HAL 187x, 8x, 9x

21 0.2

optional

0.2 standard

o

gate remain

ꢀ

L

15.7

1.0

ꢀ

L

Y

A

D

0.295

0.2

ꢀ0.09

weight

0.106 g

ꢀ0.05

4.06

ꢀ0.05

1.5

0.7

connected to PIN 2

1^+0.2

connected to PIN 2

D

ꢁ

center of

sensitive area

Y

5

.

1

.

5

x

0

.

a

0

m

ꢀ

A

5

2

.

0

.

3

r

2

.

0.5 ⁺_-^0.1

0.08

0

u

1

2

3

ꢀ

d

1

dambar cut,

not Sn plated (6x)

6

4

2

7

.

0

ejector pin Ø1.5

-

+

4

7

.

3

a

e

r

a

L

g

n

i

d

l

e

w

r

o

r

e

d

l

o

ꢀ0.05

0.36

s

5

.

Sn plated

0

-

0

ꢀ0.05

0.43

Sn plated

ꢀ0.4

2.54

lead length cut

not Sn plated (3x)

0

2.5

5 mm

scale

Dimensions are in mm.

Physical dimensions do not include moldflash.

Sn-thickness might be reduced by mechanical handling.

BACK VIEW

FRONT VIEW

JEDEC STANDARD

SPECIFICATION

ISSUE DATE

REVISION DATE

PACKAGE

TO92UA-1

ANSI

REV.NO.

2

DRAWING-NO.

(YY-MM-DD)

ITEM NO. ISSUE

TYPE

NO.

18-09-24

20-04-07

CUAS00031034.1

ZG

2102_Ver.02

c

Fig. 4–2:

TO92UA-1 Plastic Transistor Standard UA package, 3 leads, spread

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Δp

Δh

B

A

D0

F2

P2

F1

feed direction

P0

view A-B

H

H1

all dimensions in mm

TO92UA TO92UT

other dimensions see drawing of bulk

max. allowed tolerance over 20 hole spacings 1.0

Short leads 18 - 20 21 - 23.1

22 - 24.1

Long leads 24 - 26

27 - 29.1

28 - 30.1

Δp

UNIT

D0

4.0

F1

F2

Δh

L

P0

P2

T

T1

W

W0

W1

W2

1.47

1.07

1.47

1.07

11.0

max

13.2

12.2

7.05

5.65

mm

1.0

0.5

0.9

18.0

6.0

9.0

0.3

STANDARD

ISSUE DATE

YY-MM-DD

ANSI

DRAWING-NO.

ZG-NO.

ISSUE

-

ITEM NO.

ZG001031_Ver.05

IEC 60286-2

16-07-18

06631.0001.4

Fig. 4–3:

TO92UA: Dimensions ammopack inline, not spread, standard lead length

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Δp

Δh

B

A

D0

F2

P2

F1

feed direction

P0

view A-B

H

H1

all dimensions in mm

TO92UA TO92UT

21 - 23.1 22 - 24.1

other dimensions see drawing of bulk

max. allowed tolerance over 20 hole spacings 1.0

Short leads

Long leads

18 - 20

24 - 26

28 - 30.1

27 - 29.1

Δp

UNIT

mm

D0

4.0

F1

F2

Δh

L

P0

P2

T

T1

W

W0

6.0

W1

9.0

W2

0.3

2.74

2.34

2.74

2.34

11.0

max

13.2

12.2

7.05

5.65

1.0

0.5

0.9

18.0

JEDEC STANDARD

ISSUE DATE

YY-MM-DD

ANSI

DRAWING-NO.

06632.0001.4

ZG-NO.

ISSUE

-

ITEM NO.

ICE 60286-2

ZG001032_Ver.06

16-07-18

Fig. 4–4:

TO92UA: Dimensions ammopack inline, spread, standard lead length

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.2. Soldering, Welding and Assembly

Information related to solderability, welding, assembly, and second-level packaging is

included in the document “Guidelines for the Assembly of Micronas Packages”.

It is available on the TDK-Micronas website (https://www.micronas.com/en/service-

center/downloads) or on the service portal (https://service.micronas.com).

4.3. Pin Connections and Short Descriptions

Pin No. Pin Name

Short Description

Supply Voltage Pin

Ground

VSUP

GND

OUT

1

2

3

Push-Pull Output

1

VSUP

OUT

3

2

GND

Fig. 4–5: Pin configuration

4.4. Dimensions of Sensitive Area

Hall plate area = 0.2 mm 0.1 mm

See Fig. 4–1 on page 16 for more information on the Hall plate position.

4.5. Output/Magnetic-Field Polarity

Applying a south-pole magnetic field perpendicular to the branded side of the package

will increase the output voltage (for SENSITIVITY <0) from the quiescent (offset) volt-

age towards the supply voltage. A north-pole magnetic field will decrease the output

voltage. The output logic will be inverted for a SENSITIVITY setting >0.

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

4.6. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent

damage to the device. This is a stress rating only. Functional operation of the device at

these conditions is not implied. Exposure to absolute maximum rating conditions for

extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to

high static voltages or electric fields; however, it is advised that normal precautions

must be taken to avoid application of any voltage higher than absolute maximum-rated

voltages to this circuit.

All voltages listed are referenced to ground (GND).

Symbol

Parameter

No.

Min.

Max. Unit Notes

V_SUP

Supply Voltage

1

8.5

14.4

15

8.5

14.4

16

V

t < 96 h²⁾

t < 10 min²⁾³⁾

t < 1 min²⁾³⁾

V_OUT

Output Voltage

3

0.5¹⁾

8.5

14.4

16

t < 96 h²⁾

t < 10 min²⁾

t < 1 min²⁾

V_OUTV_SUPExcess of Output Voltage

1, 3

3



0.5

V

over Supply Voltage

I_OUT

Continuous Output

Current

5



5

mA

min

°C

t_sh

Output Short Circuit

Duration

3

10

4)

T_J

Junction Temperature

under Bias

40

55

190

150

T_STORAGE

Transportation/Short-Term

Storage Temperature

Device only with-

out packing

material

V_ESD

ESD Protection at VSUP⁵⁾

ESD Protection at OUT⁵⁾

1

3

4.0

8.0

4.0

8.0

kV

¹⁾Internal protection resistor = 50 

²⁾No cumulated stress

³⁾As long as T_Jmaxis not exceeded

⁴⁾For 96 h - Please contact TDK-Micronas for other temperature requirements

⁵⁾AEC-Q100-002 (100 pF and 1.5 k

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

21

DATA SHEET

HAL 1880

4.7. Storage and Shelf Life

Information related to storage conditions of Micronas sensors is included in the document

“Guidelines for the Assembly of Micronas Packages”. It gives recommendations linked to

moisture sensitivity level and long-term storage.

It is available on the TDK-Micronas website (https://www.micronas.com/en/service-

center/downloads) or on the service portal (https://service.micronas.com).

4.8. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Oper-

ating Conditions/Characteristics” is not implied and may result in unpredictable behavior

of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

Symbol Parameter

V_SUPSupply Voltage

Pin No. Min.

Typ. Max.

Unit Notes

1

4.5

5.7

5

6

5.5

8.0

V

Normal operation

During programming

I_OUT

Continuous Output

Current

3

1



1

mA

R_L

Load Resistor

3



5.5

0.33



10



k

nF



C_L

Load Capacitance

47

100

N_PRG

Number of EEPROM

Programming Cycles



0 °C < T_amb< 55 °C

T_J

Junction Operating

Temperature¹⁾



40



125

150

170

°C

for 8000 h²⁾

for 2000 h²⁾

for 1000 h²⁾

¹⁾Depends on the temperature profile of the application. Please contact TDK-Micronas for life time

calculations.

²⁾Time values are not cumulative.

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.9. Characteristics

at T_J= 40 °C to 170 °C, V_SUP= 4.5 V to 5.5 V, GND = 0 V, after programming the sensor

and locking the EEPROM, at Recommended Operation Conditions if not otherwise speci-

fied in the column “Notes”. Typical characteristics for T_J= 25 °C and V_SUP= 5 V.

Symbol Parameter

Pin Min. Typ. Max. Unit

No.

Notes

I_SUP

Supply Current over

1

5

6.75 8.5

mA

Temperature Range

Signal



Resolution

3



10



Bit

f_s

Sampling Frequency



8



kHz

DSDOUBLE = 0

DSDOUBLE = 1

16

INL

E_R

Non-Linearity of

Output Voltage

3

1.0

0

1.0

%

% of Supply Voltage

(Linear regression)

T_J= 25 °C

over Temperature²⁾

Ratiometric Error of

Output

3

1.0

1.0

%

over Temperature

(Error in VOUT/VSUP)

V_OUTH

V_OUTL

BW

Analog Output

High Voltage limit of

linear range output

3

4.7

4.9

0.1



V

V_SUP= 5 V,

I_OUT= 1 mA

Analog Output

Low Voltage limit of

linear range output



0.3

V_SUP= 5 V,

I_OUT= 1 mA

Small Signal Band-

2.25 2.5

4.5



kHz

B_AC<10 mT, f_s= 8 kHz

f_s= 16 kHz

width (3 dB)²⁾

5

¹⁾Guaranteed by design

²⁾Characterized on small sample size, not tested

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

Symbol Parameter

Pin Min. Typ. Max. Unit

No.

Notes

CLAMP_LClamp Low¹⁾

%V_SUPCLAMP_SP CLEVEL

3



0



0

1

00

01

10

00

01

10

11

5

10

15

5

10

20

10

CLAMP_HClamp High¹⁾

%V_SUPCLAMP_SP CLEVEL

3



100

95

90

85

90

95

90

80



0

1

00

01

10

00

01

10

11

Output Pin

t_r(O)

Response Time of

Output²⁾

3



68

180

s

With DSDOUBLE=1

(f_s= 16 kHz)

C_L= 10 nF, time from

10% to 90% of final out-

put voltage for a mag-

netic input signal step

from 0 mT to more than

50% of the magnetic

range of the device.

With DSDOUBLE=0

(f_s= 8 kHz)



125

360

s

C_L= 10 nF, time from

10% to 90% of final out-

put voltage for a mag-

netic input signal step

from 0 mT to more than

50% of the magnetic

range of the device.

¹⁾Guaranteed by design

²⁾Characterized on small sample size, not tested

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Symbol Parameter

Pin Min. Typ. Max. Unit

No.

Notes

t_POD

Power-Up Time



400

500

s

C_L= 10 nF, 90% of V_OUT

with DSDOUBLE = 0

f_s= 8 kHz

(time to reach stabi-

lized output voltage,

10mV)²⁾

C_L= 10 nF, 90% of V_OUT

with DSDOUBLE = 1

f_s= 16 kHz



200

1.2

300

3.0

s

V_OUTn

Output RMS Noise²⁾

3

mV

B = 5% to 95% of

RANGE

f_s= 8 kHz



2.7

60

8.2

mV

B = 5% to 95% of

RANGE

f_s= 16 kHz

R_OUT

ESD Protection

Resistance¹⁾

3





TO92UA Package

Thermal Resistance

Determined with a

1s0p board

R_thja

R_thjc

Junction to Air



250

70

K/W

Junction to Case

¹⁾Guaranteed by design

²⁾Characterized on small sample size, not tested

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.9.1. Definition of t_POD

t_PODis the power-up time to reach a stabilized output (10 mV).

Voltage

5 V

V_PORLH

V_SUP

~2 V

0 V

5 V

V_OUT

0 V

t_POD

time

Fig. 4–6: Definition of t_POD

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.10. Power-On Reset / Undervoltage Detection

at T_J= 40 °C to 170 °C, GND=0 V, typical characteristics for T_J= 25 °C, after pro-

gramming and locking.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

V_{POR_LH}

Undervoltage

1

4.15

4.3

4.45

V

Detection Level

(Power-On Reset,

Rising Supply)¹⁾

V_{POR_HL}

Undervoltage

Detection Level

1

3.9

4.05

225

4.2

V

(Power-On Reset,

Falling Supply)¹⁾

V_{POR_HYS}

Undervoltage/POR

Detection Level

Hysteresis¹⁾

150

300

mV

¹⁾Characterized on small sample size, not tested

4.11. Output Voltage in Case of Error Detection

at T_J= 40 °C to 170 °C, typical characteristics for T_J= 25 °C, after programming and

locking.

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

V_{DIAG_L}

Output Voltage in

case of Error Detec-

tion

3

0

0.02

0.1

V

V_SUP= 5 V

R_L= 5 k

pull-up

V_{DIAG_H}

Output Voltage in

case of Error Detec-

tion

3

4.7

4.9

5

V

V_SUP= 5 V

R_L= 5 k

pull-down

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.12. Magnetic Characteristics

at Recommended Operating Conditions if not otherwise specified in the column ’Notes’,

T_J= 40 °C to 170 °C, V_SUP= 4.5 V to 5.5 V, after programming the sensor and locking

the EEPROM. Typical Characteristics for T_A= 25 °C and V_SUP= 5 V.

Symbol

Parameter

No.

Values

Min.

80

Unit Notes

Typ.

Max.

RANGE_ABSAbsolute Magnetic

Range of A/D Con-



100

120

%

% of nominal

RANGE

verter over temperature

RANGE

SENS

Magnetic-field range

Sensitivity



20

10

80

160

55

mT

3

mV/ Depending on mag-

mT netic-field range ¹⁾

and SENSIVITY reg-

ister content

Sens_trim

Trim Step for Absolute

Sensitivity

3

0.3

1

mV/ At min. sensitivity

mT At max. sensitivity

Offset_trimOffseT Trim

2.5

10

312

mV OALN = 0

OALN = 1

1250

ES

Sensitivity Error over

3

6

0

6

%

Part to part variation

for certain combina-

tions of TC and

TCSQ

Temperature Range¹⁾

(see Section 4.12.1.)

B_OFFSET

Magnetic Offset

3

2

2

mT B = 0 mT, T_A= 25 °C

B_OFFSET

Magnetic Offset Drift

over temperature

range¹⁾

600 0

600

µT

B = 0 mT,

RANGE = 40 mT,

Sens = 100 mV/mT

B_OFFSET(T)  B_OFFSET

(25 °C)

B_Hysteresis

Magnetic Hysteresis¹⁾

3

20

0

20

µT

Range = 40 mT

¹⁾Characterized on small sample size, not tested

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

4.12.1. Definition of Sensitivity Error ES

ES is the maximum of the absolute value of the quotient of the normalized measured

value¹⁾over the normalized ideal linear value²⁾minus 1:

meas

ideal









-----------

ES = max abs

– 1



Tmin, Tmax

In the example shown in Fig. 4–7 the maximum error occurs at 10 °C:

1,001

0,993

------------

ES =

– 1 = 0.8%

¹⁾normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 °C

²⁾normalized to achieve a value of 1 at 25 °C

ideal 200 ppm/k

1.03

least-squares method straight line

of normalized measured data

measurement example of real

1.02

1.01

1.00

0.99

0.98

sensor, normalized to achieve a

value of 1 of its least-squares

method straight line at 25 °C

1.001

0.993

-25 ^-10

150

175

0

25

temperature [°C]

125

-50

50

75 100

Fig. 4–7: Definition of Sensitivity Error ES

TDK-Micronas GmbH

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DATA SHEET

HAL 1880

5. Application Notes

5.1. Ambient Temperature

Due to the internal power dissipation, the temperature on the silicon chip (junction temper-

ature T_J) is higher than the temperature outside the package (ambient temperature T_A).

T_J= T_A+ T

At static conditions and continuous operation, the following equation applies:

T = I_SUP* V_SUP* R_thjX

The X represents junction to air or to case.

In order to estimate the temperature difference T between the junction and the respec-

tive reference (e.g. air, case, or solder point) use the max. parameters for I_SUP, R_thX,

and the max. value for V_SUPfrom the application.

The following example shows the result for junction to air conditions. V_SUP= 5.5 V,

R_thja= 250 K/W and I_SUP= 10 mA the temperature difference T = 13.75 K.

The junction temperature T_Jis specified. The maximum ambient temperature T_Amaxcan

be estimated as:

T_Amax= T_JmaxT

Note

The calculated self-heating of the devices is only valid for the Rth test

boards. Depending on the application setup the final results in an applica-

tion environment might deviate from these values.

5.2. EMC

HAL 1880 is designed for a stabilized 5 V supply. Interferences and disturbances

conducted along the 12 V onboard system (product standard ISO 7637 part 1) are not

relevant for these applications.

For applications with disturbances by capacitive or inductive coupling on the supply line

or radiated disturbances, the application circuit shown in Fig. 5–1 on page 31 is recom-

mended. Applications with this arrangement should pass the EMC tests according to

the product standards ISO 7637 part 3 (electrical transient transmission by capacitive or

inductive coupling).

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

5.3. Application Circuit

For EMC protection, it is recommended to connect a 47 nF capacitor between ground

and output voltage pin as well as a 100 nF capacitor between supply and ground as

shown in Fig. 5–1.

VSUP

10 k

OUT

HAL1880

100 nF

47 nF

GND

Fig. 5–1: Recommended application circuit

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

5.4. Temperature Compensation

The relationship between the temperature coefficient of the magnet and the corresponding

TC and TCSQ codes for linear compensation is given in the following table. In addition to

the linear change of the magnetic field with temperature, the curvature can be adjusted as

well. For this purpose, other TC and TCSQ combinations are required which are not shown

in the table. Please contact TDK-Micronas for more detailed information on this higher

order temperature compensation.

Temperature Coefficient

TC

TCSQ

of Magnet System (ppm/K)

2100

1800

1500

1200

900

5

7

9

8

6

5

4

3

2

0

10

13

16

20

23

25

28

29

32

34

39

45

51

500

150

0

300

500

750

1000

1500

2100

2700

1

Note

For development or evaluation purposes TDK-Micronas recommends to

use the HAL 1880 / HAL 1890 Programming Environment to find optimal

settings for temperature coefficients. Please contact TDK-Micronas for

more detailed information.

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

32

DATA SHEET

HAL 1880

6. Programming of the Sensor

HAL1880 features two different operating modes. In Application Mode the sensor pro-

vides a ratiometric analog output voltage. In Programming Mode it is possible to change

the register settings of the sensor.

After power-up the sensor is always operating in the Application Mode. As long as the

sensor is not locked it can be switched to the Programming Mode by voltage pulse on

the sensor OUT pin.

6.1. Programming Interface

In Programming Mode the sensor is addressed by modulating a serial telegram on the

sensor’s output pin or on the sensor’s supply voltage. The sensor answers with a mod-

ulation of the output voltage.

A logical “0” is coded as no level change within the bit time. A logical “1” is coded as a level

change of typically 50% of the bit time. After each bit, a level change occurs (see Fig. 6–1).

The serial telegram is used to transmit the EEPROM content, error codes and digital

values of the magnetic field from and to the sensor.

t_r

t_f

V_SUPH

t_p0

logical 0

or

V_SUPL

t_p1

V_SUPH

t_p0

logical 1

t_p1

V_SUPL

Fig. 6–1: Definition of logical 0 and 1 bit

A description of the communication protocol and the programming of the sensor is avail-

able in a separate document (Application Note “HAL 1880 / HAL 1890 Programming

Guide”).

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

Table 6–1: Telegram parameters for host (All voltages are referenced to GND.)

Symbol

Parameter

No.

Limit Values

Unit

Min.

Typ.

Max.

V_SUPL

Supply Voltage for Low level dur-

ing programming through sensor

VSUP pin

1

5



6

V

V_SUPH

Supply Voltage for High level dur-

ing programming through sensor

VSUP pin

8

9

V_SUPProgram

Supply Voltage for EEPROM pro-

gramming

1

5.7

6

6.5

V

t_p0

Bit time if command send to the

sensor

1, 3



1024



µs

t_p1

BiPhase half bit time

1, 3

3



0.5



t_p0

µs

t_pOUT

Bit time for sensor answer

1024

6.2. Programming Environment and Tools

For the programming of HAL1880 during product development a programming tool

including hardware and software is available on request. It is recommended to use the

TDK MSP V1.x Magnetic Sensor Programmer or TDK-Micronas’ tool kit (HAL USB-Kit

and LabView^TMprogramming environment) in order to ease the product development.

The details of programming sequences can be found in the “HAL 1880/ HAL 1890 User

Manual” and in the “HAL 1880 / HAL1890 Programming Guide”.

6.3. Programming Information

For production and qualification tests, it is mandatory to set the LOCK bit after final adjust-

ment and programming of HAL1880. The lock function is active after the next power-up of

the sensor.

The success of the lock process shall be checked by reading the status of the LOCK bit

after locking and by a negative communication test after power-on reset.

HAL 1880 features a diagnostic register to check the success and quality of the pro-

gramming process. Detailed information about programming the sensor can be found in

the “HAL 1880 / HAL 1890 User Manual” and in the “HAL 1880 / HAL1890 Program-

ming Guide”.

EMI (Electromagnetic Interference) may disturb the programming pulses. Please take

precautions against EMI.

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

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DATA SHEET

HAL 1880

7. Document History

1. Advance Information: “HAL 1880 Programmable Linear Hall-Effect Sensor in TO92

Package”, Aug. 1, 2018, AI000208_001EN. First release of the advance information.

2. Data Sheet: “HAL 1880 Programmable Linear Hall-Effect Sensor in TO92 Package”,

March 31, 2020, DSH000198_001EN. First release of the data sheet.

3. Data Sheet: “HAL 1880 Programmable Linear Hall-Effect Sensor in TO92 Package”,

July 7, 2020, DSH000198_002EN. Second release of the data sheet.

Major Changes:

– Fig. 4.1 and 4.2: TO92UA package drawings updated

– Characteristics: Response Time of Output t_r(O)updated

4. Data Sheet: “HAL 1880 Programmable Linear Hall-Effect Sensor in TO92 Package”,

Sept. 8, 2020, DSH000198_003EN. Third release of the data sheet.

Major Changes:

– Features: Range Value updated

– Customer Setup 2 Register: MAG_RANGE comment removed

– Magnetic Characteristics: Range Value updated

TDK-Micronas GmbH

Hans-Bunte-Strasse 19  D-79108 Freiburg  P.O. Box 840  D-79008 Freiburg, Germany

Tel. +49-761-517-0  Fax +49-761-517-2174  www.micronas.com

TDK-Micronas GmbH

Sept. 8, 2020; DSH000198_003EN

35


型号：	HAL1880UA
厂家：	TDK ELECTRONICS
描述：	线性霍尔传感器传感器
文件：	总35页 (文件大小：553K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HAL1880UA [TDK]

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SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E