BF998R [TEMIC]
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | BF998R |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总8页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF998/BF998R
N-Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input- and mixer stages in UHF- and VHF-tuner
Features
Integrated gate protection diodes
High AGC-range
Low noise figure
High gain
Low feedback capacitance
High cross modulation performance
Low input capacitance
Available with reverse pin configuration (BF 998 R)
on request
2
1
1
2
13 579
94 9279
94 9278
95 10831
4
3
3
4
BF998 Marking: MO
Plastic case (SOT 143)
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1
Absolute Maximum Ratings
Parameters
Drain source voltage
Symbol
Value
Unit
V
V
DS
I
D
12
Drain current
30
mA
mA
V
Gate 1/gate 2-source peak current
Gate 1/gate 2-source voltage
±I
10
G1/G2SM
±V
7
200
G1S/G2S
Total power dissipation
Channel temperature
T
amb
≤ 60 °C
P
T
mW
°C
tot
150
Ch
Storage temperature range
T
stg
–65 ... +150
°C
Maximum Thermal Resistance
Parameters
Symbol
Value
450
Unit
K/W
Channel ambient on glass fibre printed board
25 x 20 x 1.5 mm plated with 35 m Cu
3
R
thChA
TELEFUNKEN Semiconductors
1 (8)
Rev. A2, 07-Mar-97
BF998/BF998R
Electrical DC Characteristics
T
amb
= 25 C
Parameters / Test Conditions
Type
Symbol
V(
Min
Typ
Max
Unit
Drain-source breakdown voltage
I = 10 A,–V = –V = 4 V
12
8
V
V
D
G1S
G2S
BR)DS
Gate 1-source breakdown voltage
±I = 10 mA, V = V = 0
±V(BR)G1SS
±V(BR)G2SS
14
14
50
50
G1S
G2S
DS
Gate 2-source breakdown voltage
±I = 10 mA, V = V = 0
8
V
G2S
G1S
DS
Gate 1-source leakage current
±V = 5 V, V = V = 0
±I
±I
nA
nA
G1S
G2S
DS
G1SS
G2SS
Gate 2-source leakage current
±V = 5 V, V = V = 0
G2S
G1S
DS
Drain current
= 8 V, V
V
= 0, V = 4 V
G2S
BF 998 /
DS
G1S
BF 998 R
BF 998 A /
BF 998 RA
BF 998 B /
BF 998 RB
I
I
I
4
4
18
10.5
18
mA
mA
mA
DSS
DSS
DSS
9.5
Gate 1-source cut-off voltage
= 8 V, V = 4 V, I = 20 A
V
DS
–VG1S(OFF)
–VG2S(OFF)
1.0
0.6
2.0
1.0
V
V
G2S
D
Gate 2-source cut-off voltage
= 8 V, V = 0, I = 20
V
DS
A
G1S
D
Electrical AC Characteristics
V
DS
= 8 V, I = 10 mA, V
= 4 V, f = 1 MHz, T
= 25 °C
D
G2S
amb
Parameters / Test Conditions
Symbol
Min
21
Typ
24
Max
2.5
Unit
mS
pF
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
y
21s
C
issg1
2.1
V
= 0, V
= 4 V
C
C
rss
1.1
25
pF
fF
G1S
G2S
issg2
Feedback capacitance
Output capacitance
Power gain
C
1.05
pF
oss
g = 2 mS, g = 0.5 mS, f = 200 MHz
G
G
28
20
dB
dB
S
L
ps
ps
g = 3.3 mS, g = 1 mS, f = 800 MHz
16.5
40
S
L
AGC range
V
G2S
= 4 V to –2 V, f = 800 MHz
∆G
dB
ps
Noise figure
= 2 mS, g = 0.5 mS, f = 200 MHz
g
S
F
F
1.0
1.5
dB
dB
L
g = 3.3 mS, g = 1 mS, f = 800 MHz
S
L
2 (8)
TELEFUNKEN Semiconductors
Rev. A2, 07-Mar-97
BF998/BF998R
Common Source S-Parameters
G2S = 4 V, Z0 = 50
V
S
11
S
21
S
12
S
22
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
LOG
MAG
ANG
deg
V /V
DS
I /mA
D
f/MHz
dB
dB
dB
dB
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.03
–0.15
–0.34
–0.57
–0.83
–1.10
–1.35
–1.62
–1.84
–2.09
–2.33
–2.52
–2.72
–7.2
5.71
5.51
5.20
4.84
4.39
3.98
3.57
3.16
2.80
2.43
2.11
1.79
1.52
168.8
157.3
145.9
135.5
125.3
116.0
107.2
98.9
90.6
83.0
75.3
67.5
–55.94
–50.26
–47.29
–45.68
–44.98
–44.62
–45.51
–45.88
–46.46
–47.88
–49.66
–49.70
–47.29
83.6
76.8
70.6
65.5
60.1
58.6
56.2
58.4
64.0
70.0
89.8
116.0
145.4
–0.08
–0.13
–0.21
–0.28
–0.37
–0.47
–0.55
–0.65
–0.72
–0.77
–0.82
–0.89
–0.89
–3.6
–7.0
–14.1
–20.9
–27.4
–33.6
–39.3
–45.0
–50.1
–55.6
–60.6
–65.4
–70.2
–74.9
–10.4
–13.5
–16.7
–19.5
–22.5
–25.1
–28.2
–30.9
–33.7
–36.7
–39.6
5
60.4
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.04
–0.15
–0.38
–0.62
–0.91
–1.19
–1.45
–1.74
–2.01
–2.27
–2.52
–2.73
–2.94
–7.6
7.92
7.72
7.42
7.02
6.60
6.15
5.73
5.32
4.95
4.58
4.23
3.92
3.62
168.9
157.6
146.7
136.4
126.5
117.4
108.9
100.8
92.8
85.4
78.1
70.6
63.9
–55.74
–49.95
–47.09
–45.38
–44.69
–44.43
–45.21
–45.48
–46.06
–47.18
–48.75
–48.80
–46.98
83.2
76.8
70.5
65.4
60.1
58.8
57.0
59.5
65.2
71.5
89.0
111.9
139.8
–0.10
–0.16
–0.24
–0.33
–0.43
–0.53
–0.61
–0.72
–0.79
–0.85
–0.90
–0.96
–0.97
–3.6
–7.1
–14.8
–21.9
–28.6
–35.0
–41.0
–46.6
–52.0
–57.5
–62.5
–67.2
–72.0
–76.6
–10.5
–13.8
–17.1
–19.8
–22.6
–25.4
–28.4
–31.1
–33.8
–36.9
–39.7
8
10
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
–0.04
–0.16
–0.39
–0.64
–0.93
–1.22
–1.50
–1.80
–2.06
–2.32
–2.59
–2.78
–3.00
–7.6
8.75
8.54
8.24
7.83
7.40
6.94
6.52
6.12
5.73
5.35
5.00
4.68
4.38
169.1
157.8
147.0
136.7
126.8
117.9
109.3
101.5
93.6
86.4
79.0
71.7
65.2
–55.44
–49.75
–46.89
–45.18
–44.49
–44.23
–44.91
–45.08
–45.56
–46.48
–47.85
–48.20
–46.78
83.4
76.8
70.5
65.5
60.3
59.4
57.6
60.2
65.8
71.4
87.0
107.0
133.8
–0.13
–0.19
–0.28
–0.35
–0.46
–0.57
–0.66
–0.76
–0.84
–0.90
–0.95
–1.00
–1.01
–3.7
–7.2
–14.9
–22.1
–28.9
–35.3
–41.5
–47.1
–52.6
–58.0
–62.9
–67.7
–72.4
–77.0
–10.6
–13.9
–17.2
–20.0
–22.8
–25.7
–28.6
–31.3
–34.0
–36.9
–39.9
15
TELEFUNKEN Semiconductors
3 (8)
Rev. A2, 07-Mar-97
BF998/BF998R
Typical Characteristics (Tj = 25 C unless otherwise specified)
300
4V
20
3V
2V
5V
V
=8V
DS
250
200
150
100
50
16
12
8
1V
0
4
V
=–1V
G1S
0
0
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
–0.6
–0.2
0.2
0.6
1.0
1.4
96 12159
T
amb
12817
V
G2S
– Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
3.0
32
V
=0.6V
G1S
V
=8V
=4V
V
=4V
DS
G2S
28
24
20
16
12
8
2.5
2.0
1.5
1.0
0.5
0
V
G2S
f=1MHz
0.4V
0.2V
0
–0.2V
–0.4V
4
0
0
1
2
3
4
5
6
7
8
9
10
–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
12812
V
– Drain Source Voltage ( V )
12863
V
G1S
– Gate 1 Source Voltage ( V )
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage
3.0
20
3V
2V
V
=8V
6V
5V
4V
DS
V
=4V
G2S
2.5
2.0
1.5
1.0
0.5
0
16
12
8
f=1MHz
1V
0
=–1V
4
V
G2S
0
–0.8
–0.4
0.0
0.4
0.8
1.2
2
4
6
8
10
12
12816
V
– Gate 1 Source Voltage ( V )
12864
V
DS
– Drain Source Voltage ( V )
G1S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
4 (8)
TELEFUNKEN Semiconductors
Rev. A2, 07-Mar-97
BF998/BF998R
10
0
5
0
4V
3V
V
=8V
=4V
f=800MHz
DS
f=100MHz
V
G2S
2V
f=100...1300MHz
–5
1V
–10
–20
–30
–40
–50
–10
–15
–20
–25
–30
–35
–40
I =5mA
D
0
10mA
400MHz
700MHz
–0.2V
20mA
–0.4V
1000MHz
V
=–0.8V
G2S
1300MHz
–1
–0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
Re (y ( mS )
12818
V
– Gate 1 Source Voltage ( V )
12821
)
21
G1S
Figure 10. Short Circuit Forward Transfer Admittance
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
9
32
V
=8V
V
=4V
3V
DS
G2S
f=1300MHz
8
7
6
5
4
3
2
1
0
28
24
20
16
12
8
f=1MHz
1000MHz
700MHz
2V
V
V
=15V
400MHz
DS
=4V
G2S
I =10mA
D
1V
4
100MHz
f=100...1300MHz
0
4
0
0
0
0.25 0.50 0.75 1.00 1.25 1.50
Re (y ( mS )
8
12
16
20
24
28
12822
)
12819
I
– Drain Current ( mA )
22
D
Figure 11. Short Circuit Output Admittance
Figure 8. Forward Transadmittance vs. Drain Current
20
f=1300MHz
18
16
14
1000MHz
12
10
700MHz
8
V
=8V
=4V
DS
6
4
2
0
400MHz
V
G2S
I =10mA
D
f=100...1300MHz
100MHz
0
2
4
6
8
10
12
14
12820
Re (y
)
( mS )
11
Figure 9. Short Circuit Input Admittance
TELEFUNKEN Semiconductors
5 (8)
Rev. A2, 07-Mar-97
BF998/BF998R
VDS = 8 V; ID = 10 mA;VG2S = 4 V; Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
150°
30°
j0.2
j5
1200
1300MHz
200
100
0
0.2
0.5
1
2
5
180°
0.08
0.16
0°
100
–j0.2
–j5
1300MHz
1000
–150°
–30°
–j0.5
–j2
–120°
–60°
12 960
–j
–90°
12 973
Figure 12. Input reflection coefficient
Figure 14. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
700
j0.5
j2
1000
400
150°
30°
j0.2
j5
1300MHz
1
100
180°
2
0°
0
0.2
0.5
1
2
5
100
–j0.2
–j5
–150°
–30°
1300MHz
–j0.5
–j2
–120°
–60°
12 963
–j
–90°
12 962
Figure 13. Forward transmission coefficient
Figure 15. Output reflection coefficient
6 (8)
TELEFUNKEN Semiconductors
Rev. A2, 07-Mar-97
BF998/BF998R
Dimensions of BF998 in mm
96 12240
Dimensions of BF998R in mm
96 12239
TELEFUNKEN Semiconductors
7 (8)
Rev. A2, 07-Mar-97
BF998/BF998R
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
8 (8)
TELEFUNKEN Semiconductors
Rev. A2, 07-Mar-97
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