T2526N040-6AQ [TEMIC]
Consumer IC,;
| 型号： | T2526N040-6AQ |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Consumer IC, |
| 文件： | 总14页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Features
• No external components except PIN diode
• Supply-voltage range: 2.7 V to 5.5 V
• Automatic sensitivity adaptation (AGC)
• Automatic strong signal adaptation (ATC)
• Automatic supply voltage adaptation
• Enhanced immunity against ambient light disturbances
• Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by zener-diode
fusing ± 2.5%
• TTL and CMOS compatible
Low-Voltage IR
Receiver ASSP
Applications
• Audio video applications
• Home appliances
• Remote control equipment
T2526
Description
The IC T2526 is a complete IR receiver for data communication developed and opti-
mised for use in carrier frequency modulated transmission applications. It’s function
can be described using the block diagram of figure 1. The input stage meets two main
functions. First it provides a suitable bias voltage for the PIN diode. Secondly the
pulsed photo-current signals are transformed into a voltage by a special circuit which
is optimised for low noise application. After amplification by a controlled gain amplifier
(CGA) the signals have to pass a tuned integrated narrow bandpass filter with a center
frequency f0 which is equivalent to the choosen carrier frequency of the input signal
The demodulator is used first to convert the input burst signal to a digital envelope out-
put pulse and to evaluate the signal information quality, i.e. unwanted pulses will be
suppressed at the output pin. All this is done by means of an integrated dynamic feed-
back circuit which varies the gain as a function of the present enviromental conditions
(ambient light, modulated lamps etc.). Other special features are used to adapt to the
current application to secure best transmission quality. The T2526 operates in a sup-
ply-voltage range from 2.7 V to 5.5 V. By default, the T2526 is optimised for best
performance within 2.7 V to 3.3 V.
Block Diagram
Figure 1.
VS
IN
OUT
Demo-
dulator
CGA
& filter
Input
µC
AGC / ATC
& digital control
Oscillator
Carrier frequency f0
T2526
Modulated IR signal
min 6 or 10 pulses
GND
Rev. A4, 13-Nov-01
1 (14)
Preliminary Information
Preliminary Information
Ordering Information
Delivery: unsawn wafers (DDW) in box, SO8 (150 mil) and TSSOP8 (3 mm body).
Extended Type
3)
Number
PL2)
2
RPU
30
30
40
40
30
30
D4)
Type
T2526N0xx1)-yyy5)
T2526N1xx1)-DDW
T2526N2xx1)-yyy5
T2526N3xx1)-DDW
T2526N6xx1)-yyy5
T2526N7xx1)-DDW
2179
2179
1404
1404
3415
3415
Standard type: ≥10 pulses, enhanced sensibility, high data rate
1
2
Lamp type: ≥10 pulses, enhanced suppression of disturbances, secure
data transmission
1
2
Short burst type: ≥6 pulses, enhanced data rate
1
Notes: 1. xx means the used carrier frequency value f0 30, 33, 36, 38, 40, 44 or 56 kHz.(76 kHz type on request)
2. Two pad layout versions (see figures 2 and 3) available for different assembly demand
3. Integrated pull-up resistor at PIN OUT (see electrical characteristics)
4. Typical data transmission rate up to bit/s with f0 = 56 kHz, VS = 5 V (see figure 10)
5. yyy means kind of packaging:
.................... .......DDW -> unsawn wafers in box
.................... .......TAS -> SO8 in stick
.................... .......TAQ -> SO8 taped and reeled
.................... .......6AQ -> (on request, not standard; TSSOP8 taped 1and reeled)
Samples in SO8 package are available as T2526N038, T2526N238 and T2526N638.
Pad Layout
Figure 2. Pad layout 1 (DDW only)
GND
IN
OUT
T2526
FUSING
VS
Figure 3. Pad layout 2 (DDW, SO8 or TSSOP8)
GND
IN
(6)
(5)
(1)
(3)
VS
T2526
OUT
FUSING
2 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Pin Configuration
Figure 4. Pinning SO8 and TSSOP8
VS
n.c.
1
2
3
4
8
7
6
5
n.c.
n.c.
GND
IN
OUT
n.c.
Pin Description
Pin
Symbol
Function
1
VS
Supply voltage
Not connected
Data output
2
n.c.
3
OUT
n.c.
4
Not connected
Input PIN-diode
Ground
5
IN
6
GND
n.c.
7
Not connected
Not connected
8
n.c.
Absolute Maximum Ratings
Parameter
Symbol
VS
Value
-0.3 to 6
3
Unit
V
Supply voltage
Supply current
IS
mA
V
Input voltage
VIN
IIN
-0.3 to VS
0.75
Input DC current at VS = 5 V
Output voltage
mA
V
VO
-0.3 to VS
10
Output current
IO
mA
°C
Operating temperature
Storage temperature
Power dissipation at Tamb = 25°C
Tamb
Tstg
Ptot
-25 to +85
-40 to +125
°C
mW
30
Thermal Resistance
Parameter
Symbol
RthJA
Value
130
Unit
k/W
K/W
Junction ambient SO8
Junction ambient TSSOP8
RthJA
tbd
3 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Preliminary Information
Electrical Characteristics 3-V Operation
Tamb = -25 to 85°C, VS = 2.7 to 3.3 V unless otherwise specified.
No.
1
Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1.1
1.2
2
Supply-voltage range
Supply current
Output
1
1
VS
IS
2.7
0.7
3.0
0.9
3.3
1.2
V
C
B
IIN =0
mA
Tamb = 25°C;
Internal pull-up
resistor 1)
2.1
1, 3
RPU
30/40
kΩ
A
see figure 14
R2 = 2.4 kΩ;
2.2
2.3
2.4
Output voltage low
Output voltage high
3, 6
3, 1
3, 6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
see figure 14
VS-
0.25
Output current
clamping
R2 = 0; see figure 14
8
mA
3
Input
3.1
Input DC current
VIN = 0; see figure 14
VIN = 0; Vs = 3 V,
5
5
3
IIN_DCMAX
IIN_DCMAX
IEemin
-150
µA
µA
pA
C
B
B
Input DC current; see
figure 7
3.2
3.3
-350
-700
Tamb = 25°C
Min. detection
threshold current; see
figure 5
Test signal:
see figure 13
VS = 3V,
3.4
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3 µA at
100 Hz
3
IEemin
-1500
pA
C
T
amb= 25°C,
IIN_DC=1µA;
square pp,
burst N=16,
f=f0; tPER = 10 ms,
fig. 12;
BER = 502)
3.5
Max. detection
threshold current with
VIN > 0V
Test signal:
3
IEemax
-200
µA
D
see figure 13
VS = 3 V, Tamb = 25°C,
IIN_DC = 1µA;
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
fig. 12; BER=5%2)
4
Controlled Amplifier and Filter
Max. value of variable
gain (CGA)
GVARMAX
GVARMIN
51
-5
dB
dB
D
D
4.1
Min. value of variable
gain (CGA)
4.2
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
4 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Electrical Characteristics 3-V Operation
Tamb = -25 to 85°C, VS = 2.7 to 3.3 V unless otherwise specified.
No.
4.3
4.4
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Total internal
GMAX
71
dB
D
amplification3)
Center frequency
fusing accuracy of
bandpass
f03V_FUSE
-2.5
-5.5
-4.5
f0
+2.5
+3.5
+3.0
%
%
A
C
C
C
VS = 3 V, Tamb = 25°C
4.5
4.6
4.7
Overall accuracy
center frequency of
bandpass
f03V
f0
Overall accuracy
center frequency of
bandpass
f03V
f0
%
Tamb = 0 to 70°C
BPF bandwidth
-3dB; f0 = 38 kHz;
see figure 11
B
3.8
kHz
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
Electrical Characteristics 5-V Operation
Tamb = -25 to 85°C, VS = 2.7 to 3.3 V unless otherwise specified.
No.
5
Parameters
Supply
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
5.1
5.2
6
Supply-voltage range
Supply current
Output
1
1
VS
IS
4.5
0.9
5.0
1.2
5.5
1.5
V
C
B
IIN =0
mA
Tamb = 25°C;
Internal pull-up
resistor 1)
6.1
1,3
RPU
30/40
kΩ
A
see figure 14
R2 = 2.4 kΩ;
6.2
6.3
6.4
Output voltage low
Output voltage high
3,6
3,1
3,6
VOL
VOH
IOCL
250
Vs
mV
V
B
B
B
see figure 14
VS-
0.25
Output current
clamping
R2 = 0; see figure 14
VIN = 0; see figure 14
8
mA
7
Input
7.1
Input DC current
5
5
IIN_DCMAX
IIN_DCMAX
-400
µA
µA
C
B
VIN = 0; Vs = 5 V,
Input DC-current; see
figure 8
7.2
-700
Tamb = 25°C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
5 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Preliminary Information
Electrical Characteristics 5-V Operation
Tamb = -25 to 85°C, VS = 2.7 to 3.3 V unless otherwise specified.
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
7.3
Min. detection
threshold current; see
figure 6
Test signal:
see figure 13
VS = 5 V,
3
IEemin
-890
pA
B
7.4
Min. detection
threshold current with
AC current
disturbance
IIN_AC100 = 3 µA at
100 Hz
3
IEemin
-2500
pA
C
Tamb= 25°C,
IIN_DC=1µA;
square pp,
burst N=16,
f=f0; tPER = 10 ms,
fig. 12;
BER = 502)
7.5
Max. detection
threshold current with
VIN > 0V
Test signal:
3
IEemax
-500
µA
D
see figure 13
VS = 5 V, Tamb = 25°C,
I
IN_DC = 1µA;
square pp,
burst N = 16,
f = f0; tPER = 10 ms,
fig. 12; BER=5%2)
8
Controlled Amplifier and Filter
Max. value of variable
gain (CGA)
GVARMAX
GVARMIN
GMAX
51
-5
dB
dB
dB
%
D
D
D
A
8.1
Min. value of variable
gain (CGA)
8.2
Total internal
amplification3)
71
8.3
8.4
Resulting center
frequency fusing
accuracy
f05V
f03V-
f0 fused at VS = 3 V
VS = 5 V, Tamb = 25°C
FUSE
+0.5
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes: 1. Depending on version, see “Ordering Information”
2. BER = bit error rate; e.g. BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the Pin OUT
3. After transformation of input current into voltage
ESD
All pins
2000V HBM; 200V MM, MIL-STD-883C, Method 3015.7
Reliability
Electrical qualification (1000h) in molded S08 plastic package
6 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Typical Electrical Curves at Tamb = 25°C
Figure 5. IEemin vs. IIN_DC , VS = 3V
100.0
10.0
1.0
VS = 3 V
f = f0
0.1
0.1
1.0
10.0
I IN_DC ( µA )
100.0
1000.0
1000.0
1000.0
Figure 6. IEemin vs. IIN_DC , VS = 5 V
100.0
VS = 5 V
f = f0
10.0
1.0
0.1
0.1
1.0
10.0
I IN_DC ( µA )
100.0
Figure 7. VIN vs. IIN_DC, VS = 3 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VS = 3 V
f = f0
0.0
0.1
1.0
I
10.0
( µA )
100.0
IN_DC
7 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Preliminary Information
Figure 8. VIN vs. IIN_DC, VS = 5 V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VS = 5 V
f = f0
0.0
0.1
1.0
10.0
( µA )
100.0
1000.0
I
IN_DC
Figure 9. Data transmission rate, VS = 3 V
5000
4500
4000
3500
3000
2500
VS = 3 V
Short burst
Standard type
Lamp type
2000
1500
1000
500
0
25.0
35.0
45.0
55.0
65.0
75.0
85.0
f 0 ( kHz )
Figure 10. Data transmission rate, VS = 5 V
5000
4500
4000
3500
3000
2500
VS = 5 V
Short burst
Standard type
Lamp type
2000
1500
1000
500
0
25.0
35.0
45.0
55.0
65.0
75.0
85.0
f 0 ( kHz )
8 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Figure 11. Typical bandpass curve
1.10
VS = 3 V
1.00
0.90
0.80
Bandwidth (-3dB)
0.70
0.60
0.50
0.40
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f / f0
Q = f/f0 / Β; Β => -3dB values.
Example: Q = 1/ (1.047 - 0.954) = 11
Figure 12. Illustration of used terms
Example: f = 30 kHz, burst with 16 pulses, 16 periods
Period (P = 16)
1066 µs
Burst (N = 16 pulses)
533 µs
IN
1
7
16
7
7
33 µs
t
t
DOFF
OUT
DON
533 µs
Envelope 16
Envelope 1
17056 µs / data word
Telegram pause
OUT
Data word
Data word
17 ms
T
= 62 ms
REF
9 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Preliminary Information
Test Circuit
Figure 13.
I
=
∆U1/400k
∆U1
Ee
VDD = 3 V to 5 V
I
1nF
400k
I
IN_
Ee
DC
R1 = 220
VS
20k
I
IN
I
V
IN_AC100
IN
OUT
PULSE
1nF
T2526
∆U2
GND
20k
-
∆U2 / 40k
=
I
C1
4.7µF
IN_ DC
f
0
16
DC
+
t
= 10ms
PER
Application Circuit
Figure 14.
VDD = 3 V to 5 V
*) optional
R1 = 220
R2* > 2,4k
RPU
I
S
VS
I
OCL
IN
T2526
µC
OUT
I
IN
GND
V
V
IN
O
C1
4.7µF
C2* = 470pF
I
I
Ee
IN_DC
10 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Chip Dimensions
Figure 15. Chip size in µm
1210, 1040
GND
336, 906
IN
783, 887
Scribe
VS
55, 652
T2526
55, 62
OUT
FUSING
0, 0
Width
Note: Pad coordinates are given for lower left corner of the pad in µm from the origin
0,0
Dimensions
Length incl. scribe
Width incl. scribe
Thickness
1.16 mm
1.37 mm
290 µ ± 5%
90 µ x 90 µ
70 µ x 70 µ
Pads
Fusing pads
AlSiTi
Pad metallurgy
Finish
Si3N4 thickness 1.05 µm
11 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Preliminary Information
Package Information
Figure 16.
Package SO8
Dimensions in mm
5.2
4.8
5.00
4.85
3.7
1.4
0.25
0.2
0.4
3.8
0.10
1.27
6.15
5.85
3.81
8
5
technical drawings
according to DIN
specifications
1
4
Figure 17.
Package TSSO8
Dimensions in mm
3.1
2.9
5.0
4.8
0.9
0.8
0.20
0.13
0.38
0.25
0.15
0.05
3.1
2.9
0.65
1.95
8
5
technical drawings
according to DIN
specifications
1
4
12 (14)
T2526
Rev. A4, 13-Nov-01
T2526
Ozone Depleting Substances Policy Statement
It is the policy of Atmel Germany GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid
their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these
substances.
Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed
in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and
do not contain such substances.
13 (14)
Preliminary Information
Rev. A4, 13-Nov-01
Atmel Wireless & Microcontrollers Sales Offices
France
3, Avenue du Centre
78054 St.-Quentin-en-Yvelines
Cedex
Tel: +33 1 30 60 70 00
Fax: +33 1 30 60 71 11
Sweden
Hong Kong
Kavallerivaegen 24, Rissne
17402 Sundbyberg
Tel: +46 8 587 48 800
Fax: +46 8 587 48 850
Room #1219,
Chinachem Golden Plaza
77 Mody Road, Tsimhatsui East
East Kowloon, Hong Kong
Tel: +852 23 789 789
Fax: +852 23 755 733
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Tel: +44 1344 707 300
Fax: +44 1344 427 371
Germany
Erfurter Strasse 31
85386 Eching
Tel: +49 89 319 70 0
Fax: +49 89 319 46 21
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Fax: +822 785 1137
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Fax: +49 7131 67 31 63
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Tel: +1 908 848 5208
Fax: +1 908 848 5232
Tel: +65 260 8223
Fax: +65 787 9819
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8F-2, 266 Sec.1 Wen Hwa 2 Rd.
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244 Taipei Hsien
Tel: +886 2 2609 5581
Fax: +886 2 2600 2735
Italy
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20151 Milano
Tel: +39 02 38 03 71
Fax: +39 02 38 03 72 34
Spain
Japan
Principe de Vergara, 112
28002 Madrid
Tonetsushinkawa Bldg.
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Tokyo 104-0033
Tel: +34 91 564 51 81
Fax: +34 91 562 75 14
Tel: +81 3 3523 3551
Fax: +81 3 3523 7581
Web Site
http://www.atmel-wm.com
© Atmel Germany GmbH 2001.
Atmel Germany GmbH makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty
which is detailed in Atmel Germany GmbH’s Terms and Conditions. The Company assumes no responsibility for any errors which may appear in
this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commit-
ment to update the information contained herein. No licenses to patents or other intellectual property of Atmel Germany GmbH are granted by
the Company in connection with the sale of Atmel Germany GmbH products, expressly or by implication. Atmel Germany GmbH’s products are
not authorized for use as critical components in life support devices or systems.
Data sheets can also be retrieved fron the Internet: http://www.atmel-wm.com
Rev. A4, 13-Nov-01
相关型号：
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