TZQ5238B [TEMIC]

Zener Diode, 8.7V V(Z), 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2;


型号：	TZQ5238B
厂家：	TEMIC SEMICONDUCTORS
描述：	Zener Diode, 8.7V V(Z), 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2 测试二极管
文件：	总7页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

TZQ5221B...TZQ5267B

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Available with tighter tolerances

Very high stability

Low noise

96 12009

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

300K/W

Type

Symbol

Value

500

Unit

Power dissipation

Z–current

thJA

P /V

Junction temperature

Storage temperature range

175

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

Value

300

Unit

K/W

Junction lead

thJL

thJA

Junction ambient

500

Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol

Min

Typ

Max

1.5

Unit

TELEFUNKEN Semiconductors

1 (7)

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

Type

Znom

for r

at I

at V

zjT

zjk

%/K

TZQ5221B

TZQ5222B

TZQ5223B

TZQ5224B

TZQ5225B

TZQ5226B

TZQ5227B

TZQ5228B

TZQ5229B

TZQ5230B

TZQ5231B

TZQ5232B

TZQ5233B

TZQ5234B

TZQ5235B

TZQ5236B

TZQ5237B

TZQ5238B

TZQ5239B

TZQ5240B

TZQ5241B

TZQ5242B

TZQ5243B

TZQ5244B

TZQ5245B

TZQ5246B

TZQ5247B

TZQ5248B

TZQ5249B

TZQ5250B

TZQ5251B

TZQ5252B

TZQ5253B

TZQ5254B

TZQ5255B

2.4

2.5

2.7

2.8

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.0

6.2

6.8

7.5

8.2

8.7

9.1

< 30 < 1200 0.25

< 30 < 1250 0.25

< 30 < 1300 0.25

< 30 < 1400 0.25

< 29 < 1600 0.25

< 28 < 1600 0.25

< 24 < 1700 0.25

< 23 < 1900 0.25

< 22 < 2000 0.25

< 19 < 1900 0.25

< 17 < 1600 0.25

< 11 < 1600 0.25

< 100

< 75

< 50

< 25

< 15

< 10

< 5

1.0

2.0

3.0

3.5

4.0

5.0

6.0

6.5

7.0

8.0

8.4

9.1

9.9

< –0.085

< –0.080

< –0.075

< –0.070

< –0.065

< –0.060

< ±0.055

< ±0.030

< +0.038

< +0.045

< +0.050

< +0.058

< +0.062

< +0.065

< +0.068

< +0.075

< +0.076

< +0.077

< +0.079

< +0.082

< +0.083

< +0.084

< +0.085

< +0.086

< +0.087

< +0.088

< +0.089

< +0.090

< +0.091

< 5

< 7

< 1600 0.25

< 1000 0.25

< 750 0.25

< 500 0.25

< 600 0.25

< 5

< 3

< 6

< 3

< 8

< 3

< 8

< 3

< 10

< 17

< 22

< 30

< 13

< 15

< 16

< 17

< 19

< 21

< 23

< 25

< 29

< 33

< 35

< 41

< 44

< 3

< 2

< 1

9.5

9.0

8.5

7.8

7.4

7.0

6.6

6.2

5.6

5.2

5.0

4.6

4.5

< 0.5

< 0.1

2 (7)

TELEFUNKEN Semiconductors

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

Type

Znom

for r

at I

at V

zjT

zjk

4.2

3.8

3.4

3.2

3.0

%/K

TZQ5256B

TZQ5257B

TZQ5258B

TZQ5259B

TZQ5260B

TZQ5261B

TZQ5262B

TZQ5263B

TZQ5264B

TZQ5265B

TZQ5266B

TZQ5267B

< 49

< 58

< 70

< 80

< 93

< 600 0.25

< 700 0.25

< 800 0.25

< 900 0.25

< 0.1

< +0.091

< +0.092

< +0.093

< +0.094

< +0.095

< +0.096

< +0.097

< +0.098

2.7 < 105 < 1000 0.25

2.5 < 125 < 1100 0.25

2.2 < 150 < 1300 0.25

2.1 < 170 < 1400 0.25

2.0 < 185 < 1400 0.25

1.8 < 230 < 1600 0.25

1.7 < 270 < 1700 0.25

Based on dc measurement at thermal equilibrium;

case temperature maintained at 30°C ± 2°C.

TELEFUNKEN Semiconductors

3 (7)

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

Typical Characteristics (T_j= 25 C unless otherwise specified)

600

500

400

300

200

100

I =5mA

–5

200

120

160

95 9602

amb

– Ambient Temperature ( °C )

95 9600

V – Z-Voltage ( V )

Figure 1. Total Power Dissipation vs. Ambient Temperature

1000

Figure 4. Temperature Coefficient of Vz vs. Z–Voltage

200

T =25°C

150

100

V =2V

T =25°C

100

I =5mA

V – Z-Voltage ( V )

95 9598

V – Z-Voltage ( V )

95 9601

Figure 2. Typical Change of Working Voltage under Operating

Conditions at T =25 C

Figure 5. Diode Capacitance vs. Z–Voltage

amb

100

1.3

1.2

1.1

=V /V (25°C)

Zt Z

Ztn

–4

TK =10 10 /K

–4

10 /K

T =25°C

–4

10 /K

–4

10 /K

–4

10 /K

0.1

1.0

0.9

0.8

–4

–2 10 /K

–4

–4 10 /K

0.01

0.001

1.0

240

0.2

0.4

0.6

0.8

–60

120

180

95 9605

V – Forward Voltage ( V )

95 9599

T – Junction Temperature ( °C )

Figure 3. Typical Change of Working Voltage vs. Junction

Temperature

Figure 6. Forward Current vs. Forward Voltage

4 (7)

TELEFUNKEN Semiconductors

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

100

1000

I =1mA

tot

=500mW

100

amb

=25°C

5mA

10mA

T =25°C

95 9604

– Z-Voltage ( V )

95 9606

V – Z-Voltage ( V )

Figure 9. Differential Z–Resistance vs. Z–Voltage

Figure 7. Z–Current vs. Z–Voltage

=500mW

tot

=25°C

amb

V – Z-Voltage ( V )

95 9607

Figure 8. Z–Current vs. Z–Voltage

1000

100

t /T=0.5

t /T=0.2

Single Pulse

T=T

=300K/W

–T

jmax amb

thJA

t /T=0.01

t /T=0.1

t /T=0.02

1/2

t /T=0.05

=(–V +(V +4r

T/Z

)

)/(2r )

thp

–1

t – Pulse Length ( ms )

95 9603

Figure 10. Thermal Response

definition (in mm)

Figure 11. Board for R

thJA

TELEFUNKEN Semiconductors

5 (7)

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

Dimensions in mm

96 12071

6 (7)

TELEFUNKEN Semiconductors

Rev. A2, 22-Aug-97

TZQ5221B...TZQ5267B

Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of

continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain

such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized

application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,

directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

TELEFUNKEN Semiconductors

7 (7)

Rev. A2, 22-Aug-97

TZQ5238B [TEMIC]

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