U2321B-AFP [TEMIC]
Video Tuner, 2-Band, PDSO16, SO-16;
| 型号： | U2321B-AFP |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Video Tuner, 2-Band, PDSO16, SO-16 光电二极管 |
| 文件： | 总9页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2321B-AFP
TV-Tuner IC with Two Separate Oscillators and Mixers,
LO Output and Band Switch Input
Description
This tuner IC requires a power supply of 12 V and mixers, dual state band switch and LO output in a small
performs the function of two separate oscillators and SO16 plastic package.
Features
Band A (VHF); low resistance symmetrical mixer
input in common-base connection and 2-pin oscillator
Voltage stabilization to avoid operating voltage de-
pendency
ESD protection at all pins except for RF inputs and
oscillator pins
Band B (UHF); low resistance symmetrical mixer
input in common-base connection and 4-pin oscillator
Decoupled symmetrical LO output for frequency
divider or PLL, one output is a simultaneous band-
switch input
Package: SO16
Block Diagram
11
12 13
14
3
5
1257
3
Osc. B
Osc. A
Band switch
8
7
10
9
Voltage stabil.
Band B
Band A
4
1
2
15
16
6
Figure 1. Block diagram
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
1 (9)
U2321B-AFP
Pin Description
Pin
1, 2
3
4
5
Symbol
RF in, B
Function
RF inputs, band B
RF in, B
RF in, A
1
2
3
4
5
6
7
8
16
Osc A, base Oscillator band A, base
GND Ground
Osc A, coll. Oscillator band A,
collector
VS
Band sw.
RF in, B
Osc A, base
GND
15 RF in, A
Osc B, base 2
14
13
12
11
10
9
6
7 and/or 8
7, 8
Supply voltage
Band switch input
LO outputs
Mixer outputs,
open collector
Osc B, coll. 1
Osc B, coll. 2
9, 10
Mix out
Osc A, coll.
11
12
13
14
Osc B, base 1 Oscillator band B, base 1
Osc B, coll. 2
Osc B, coll. 1
Osc B. base 2
collector 2
collector 1
base 2
VS
Band sw.
Band sw.
Osc B, base 1
Mix out
15, 16
RF in, A
RF inputs, band A
Mix out
95 10929
Figure 2. Pinning
Absolute Maximum Ratings
Reference point Pin 4, unless otherwise specified
Parameters
Symbol
VS
Value
13.5
Unit
V
Supply voltage
Pin 6
Switching current
RF inputs
IF outputs
Power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Pin 7
Pins 1, 2, 15 and 16
Pins 9 and 10
ISW
Ve
VIF
Ptot
Tj
Tamb
Tstg
1
5
13.5
450
125
mA
V
V
mW
°C
°C
°C
–25 to +80
–25 to +125
Thermal Resistance
Junction ambient 1)
Parameters
Symbol
RthJA
RthJA
Typ
110
100
Unit
K/W
K/W
Mounted without glue
Mounted with glue
1)
Measured on a glass fibre printed circuit
board 40 x 40 x 1.5 mm3 with 35 m Cu coating
R(th) SO16 U2321B
2 (9)
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
U2321B-AFP
Electrical Characteristics
Tamb = 25°C, VS = 12 V, reference point: Pin 4, unless otherwise specified
Parameters
Supply voltage
Supply current
Test Conditions / Pins
Pin 6
Symbol
VS
Min
10.8
Typ
12.0
30
Max
13.2
Unit
V
mA
Pins 6 + 9 + 10
IS
Band switch thresholds
Pins 7 + 8
Band B (UHF)
Band A (VHF)
(V7/8 is approximately 7 V.
The current can be taken
from one or both pins).
IBAND
0
–50
A
A
–250
LO level (per output)
RL = 50
Pins 7, 8
PLO
20
–10
27
dBmV
dBc
LO output, harmonic
spacing (referred to the
fundamental wave)
Crosstalk RF input (sym.)
to the LO (sym.)
Ve = 150 mVeff
–40
–35
dBc
(referred to the funda-
mental wave of the LO)
For these LO measurements, the output must also be value obtained is 6 dB higher.
terminated with a balun (2 x 50 as input and 50 asym- Refer to page 7 for notes and explanations relating to the
metrical to the measurement receiver). If this circuit table above.
configuration is also used for measuring the LO level, the
Electrical Characteristics
Band A
Parameters
Frequency range
Input impedance
Gain 1)
Test Conditions / Pins
Pins 15, 16
Symbol
fe
s11
Min.
48
Typ.
Max.
470
Unit
MHZ
(see figure 1)
4
VHF -> IF
Vp
dB
DSB noise factor
fe = 50 MHz
fe = 450 MHz
F
F
9.5
10.0
dB
dB
Signal to noise ratio
V(e) = 80 dB V
IM 3rd order 2)
IM 2nd order 2)
S/N
S/N
60
60
dB
dB
LO pulling with input
signal 80% AM
fmod = 50 kHz
V(e) = 80 dB V
60
dB
N + 5 pulling
–50
dBc
1)
2)
All levels at the VHF and UHF input are available voltages at outputs across 50
The present voltage is therefore not measured at this point.
.
Measured at IF output at test circuit page 5.
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
3 (9)
U2321B-AFP
Electrical Characteristics
Band B
Parameters
Frequency range
Input impedance
Gain 1)
Test Conditions / Pins
Pin 1, 2
Symbol
fe
s11
Min.
470
Typ.
Max.
860
Unit
MHz
(see figure 1)
4
VHF → IF
Vp
dB
DSB noise factor
fe = 500 MHz
fe = 800 MHz
F
F
10.5
11.5
dB
dB
Signal-to-noise ratio
V (e) = 80 dB V
IM 3rd order 2)
IM 2nd order 2)
S/N
S/N
60
60
dB
dB
LO pulling with input sig-
nal 80% AM
f
mod = 50 kHz
60
dB
V(e) = 80 dB V
N + 5 pulling
–50
dBc
1)
2)
All levels at the VHF and UHF input are available voltages at outputs across 50
The present voltage is therefore not measured at this point.
.
Measured at IF output at test circuit page 5.
4 (9)
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
U2321B-AFP
Application and Test Circuit
UHF-Oscillator
VHF Oscillator
D1
D2
C1
C2
C3
L1
L2
L3
BB729
BA582
3 p 3
1 p2
68 p
1.5 turns 2.5
1.5 turns 2.8
7.5 turns 2.5
D3
C4
C5
C6
BB729
13 p
1 p 0
1 p 5
L4
1.5 turns 2.0
V(d)
BB729
D3
13 pF
C4
IF
VHF
L4
T1
180 Deg.
27 pF
C5
C6
C7
C8
1 nF
16
1 nF
15
1 pF
1.5 pF 1.5 pF 1 pF
14
13
C
12
C
11
B
10
9
8
B
V(b)
L1: 1.5 turns 2.5 dia
L2: 1.5 turns 2.8 dia
L3: 7.5 turns 2.5 dia
L4: 1.5 turns 2.0 dia
U2321B
B
3
C
1
2
5
6
4
7
C1
C2
1 nF
L.O.
L1
1 nF
1 nF 3.3 pF
1.2 pF
UHF
180 Deg.
1 nF
180 Deg.
D1
BB729
L2
L3
27 k
1 nF
1.5 k
Band
switch
VHF /
UHF
C3
D2
BA582
68 pF
V(d)
12574
Figure 3.
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
5 (9)
U2321B-AFP
Input Impedance S11
j
0.5j
2j
1045 MHz
750 MHz
0.2j
5j
350 MHz
45 MHz
0
0.2
0.5
1
2
5
–0.2j
–5j
–0.5j
–2j
96 12045
–j
Figure 4. Input impedance S of the mixer band A (Pins 15, 16) and band B (Pins 1, 2)
11
The reference resistance is 50 . The measuring range is calibration to this value takes place followed by conver-
45 MHz ( [ ] ) to 1045 MHz. Control is symmetrical here. sions to 50
Since the hybrid used has an output resistance of 100
.
,
6 (9)
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
U2321B-AFP
General Notes
The RF inputs A and B are controlled symmetrically by The N + 5 pulling is measured with an interference carrier
means of a hybrid with 180 degrees phase rotation. The interval of –1.1 MHz with respect to the oscillator
source impedance is therefore 100 . For RF measure- frequency. The input level of the utilize carrier and the
ments, all other impedances are 50
.
interference carrier is –27 dBm (80 dB V) in each case.
The interference interval is determined within the
intermediate frequency relative to the utilize signal.
The baluns used have an impedance of 50 at all ports,
meaning that the symmetrical side has an impedance of
100 . The H-9 from the ANZAC company is an example
of this. Since this is a power divider, the losses of approxi-
mately 3 dB are calculated within the measurement.
IM 2
Test conditions IM2: f(interference) = 2 x f(utilize) + 0.5
MHz. Example: utilize frequency = 50 MHz, interference
frequency = 100.5 MHz. The amplitude modulated IM2
is shaped within the intermediate frequency at intervals
of 0.5 MHz (see figure 5).
Other possibilities which are more simple to achieve may
be a 4:1 transformer (disadvantage: at high frequencies
> 600 MHz out of optimum) or a 50 cable with a suffi-
cient number of ferrit pearls (disadvantage: at low
frequencies out of optimum). However, neither has the
impedance of 100 on the symmetrical side.
IM 3
Test conditions IM3: VHF interference carrier level in the
range of +6.5 to 7. MHz, UHF in the range of +7 to
9 MHz.
The double sideband noise factor is stated here, which
means that the measuremen is performed without RF Modulation is declared in the case of an oscillator pulling
selection. The source impedance is 100
(see above).
symmetrical the interval between the LO utilize signal at the LO output
and the impressed interference (see figure 6).
12575
80 dB V
8 dB
IM 2
fmod= –50 kHz
fmod= +50 kHz
futil.
finterf.
m = 80%
fRF
fIF
0.5 MHz
Figure 5. IM2 measurement
12576
80 dB V
IM 3
futil.
finterf.1 finterf.2 fRF
Figure 6. IM3 measurement
fIF
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
7 (9)
U2321B-AFP
Package Information
Package: SO16
Dimensions in mm
94 8875
8 (9)
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
U2321B-AFP
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
Rev. A1, 18-Sep-96
9 (9)
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