U2510B [TEMIC]
All-Band AM/FM Receiver and Audio Amplifier; 全波段AM / FM接收器和音频放大器
| 型号： | U2510B |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | All-Band AM/FM Receiver and Audio Amplifier |
| 文件： | 总15页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2510B
All-Band AM/FM Receiver and Audio Amplifier
Description
The U2510B is an integrated bipolar one-chip AM/FM receiver, an AF amplifier and a mode switch for AM, FM
radio circuit. It contains an FM front end with and tape. This circuit is designed for clock radios and
preamplifier, FM IF and demodulator, a complete AM portable radio-cassette recorders.
Features
Superior FM strong signal behavior by using RF AGC
DC mode control: AM, FM and tape
Wide supply-voltage range and low quiescent current
High AF output power: 1 W
Soft mute and HCC for decreasing interstation noise
in FM mode
Electronic volume control
Excellent AFC performance (level controlled, both
polarities available)
Electronic AF bandwidth control (treble and high cut)
Output stage for headphone and speaker drive
Level indicator (LED drive) for AM and FM
Block Diagram
(Replaceable)
VS
FM RF
tank
FM osc.
tank
IF BPE
FM ant.
9
8
7
6
14 16
2
26
28
AFC
27
3
12
FM
front end
FM RF
BPE
FM IF
amp.
FM
discr.
Power
amp.
AFC
control
AGC
11
10
5
FM
AGC
25
23
AM IF
amp. and
detect.
AM
front end
AM
ant.
24
4
IF
AGC
IF
AF preamp.
Volume
Mute
RF AGC
AM osc.
tank
AM
AGC
Level
indic.
AM/FM
Voltage stab.
and
mode control
VRef
HCC
15
21
13
20
19
1
22
18
S2
VS
AFC mode
AM
LED
VS
Tape
FM
Treble
Vol
13912
Figure 1. Block diagram
TEMIC Semiconductor
1 (15)
Rev. A1, 06-Apr-98
U2510B
Order Information
Extended Type Number
Package
SDIP28
SDIP28
Remarks
U2510B-M
U2510B-M__T
V < 6 V supply voltage
S
Pin
5
Symbol
AMOsc
Function
Pin Description
AM oscillator tank circuit input, recommended
load impedance approximately 2.5 k
6
7
FM–AFC
FMOsc
AFC diode connection, coupling capacitor
AF-GND
Mute
1
2
3
4
5
6
7
8
9
28
(C ) determines the AFC characteristic
19
(holding range and slope)
FM-discr
FM oscillator tank circuit input, recommended
load impedance approximately 3 k
AFout
27
26
8
9
V
Regulated voltage output (2.4 V)
Ref
CF
Vol ctrl in
AMOsc
V
S
FMtank
AMtank
FM-AGC
FM RF tank circuit connection, recommended
load impedance approximately 3 k
10
11
AM RF tank circuit connection, recommended
load impedance approximately 20 k
Ripple in
25
24
FM AGC voltage output, time constant (C ).
20
Loading this pin by a resistor (to GND) will
increase the FM AGC threshold, grounding
this pin will switch off the FM AGC function
AFin
12
FMin
FM RF input (common-base preamplifier
transistor), recommended (RF) source
impedance approximately 100
AM/FM detect
FM-AFC
FMOsc
23
22
21
V
13
14
FE-GND
FM front-end ground
AGC/AFC
AM/FM
IFout
AM/FM IF output
(collector output of the IF preamplifier)
V
AFC switch
IF-GND
Ref
15
Mode ctrl Mode control input:
switch
Pin
open
Ground
| Function
| FM
| AM
FMtank
AMtank
20
19
18
V (R = 10 k ) | Tape
S
4
16
17
18
19
AM-IFin
FM-IFin
AM IF input, input impedance = 3.1 k
FM IF input, input impedance = 330
Treble control voltage input
LED drive
10
11
12
V
Treble in
LED drive Level indicator output
(open-collector output, LED drive)
IF ground
V
FM-AGC
FMin
Treble in
20
IF-GND
FM-IFin
AM-IFin
17
16
15
21 AFC switch AFC function control input:
Pin
open
Ground
| Function
| AFC off
FE-GND
13
14
| f
OSC
| f
OSC
> f
in
< f
in
V
S
22
23
V
AGC/AFC voltage, time constant adjust (C ),
input impedance approximately 42 k
AM/FM
IFout
Mode ctrl
switch
AGC/AFC
10
14812
AM/FM
detect
AM/FM detector output, the load capacitor
(C ) in conjunction with the detector output
11
Figure 2. Pinning
resistance (7.5 k ) determines the (FM)
deemphasis as well as the (modulation)
frequency response of the AM detector
Pin
1
Symbol
Mute
Function
24
25
AFin
Audio amplifier input, input resistance
approximately 100 k coupling capacitor
(C ) determines the low frequency response
9
Mute voltage output, time constant (C ),
mute depth and threshold adjustable by load
23
resistance (R )
3
Ripple in
Ripple filter connection. Load capacitance
2
3
FM-discr
CF
FM discriminator filter connection, ceramic
resonator or equivalent LC-circuit
(C ) determines the frequency response of the
12
supply-voltage ripple rejection
Audio negative feedback input. Blocking
26
27
28
V
Supply voltage input
capacitor (C ) determines the audio amplifiers
S
8
low-end cut-off frequency
AFout
Audio amplifier output
4
Vol ctrl in Input for volume control voltage
AF-GND
Ground of the audio power stage
2 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
Terminal Voltages
Test circuit: V = 0
in
Voltage/V
FM TAPE AM
Pin
Symbol
V = 3 V
S
V = 6 V
S
AM
–
FM TAPE
1
Mute voltage (R = 0)
V
1
V
2
V
3
V
4
V
5
V
6
V
7
V
8
V
9
1.6
1.0
1.2
2.4
–
–
–
–
–
1.6
1.0
2.6
2.4
–
–
–
3
2
FM discriminator
–
3
Negative feedback
1.2
2.4
2.4
–
1.2
2.4
–
2.6
2.4
2.4
–
2.6
2.4
–
4
Volume control input (S = A)
4
5
AM oscillator
FM AFC
6
1.9
2.4
2.4
2.4
–
–
1.9
2.4
2.4
2.4
2.4
0
–
7
FM oscillator
–
–
–
–
8
V
Ref
2.4
–
2.4
2.4
–
2.4
–
2.4
–
9
FM RF tank
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
AM input
V
10
V
11
V
12
V
13
V
14
V
15
V
16
V
17
V
18
V
19
V
20
V
21
V
22
V
23
V
24
V
25
V
26
V
27
V
28
2.4
–
–
–
FM AGC
0
–
–
–
FM input
1.4
–
–
–
1.4
–
–
Front end ground
AM/FM IF output
Mode control switch
AM IF input
FM IF input
–
2.9
0
–
–
–
2.7
–
–
5.9
0
5.7
–
–
2.9
–
5.7
–
0
–
0
–
–
0.7
2.4
–
–
0.7
2.4
–
Treble control input (S = A)
2.4
2.4
2.4
2.4
5
LED
IF ground
0
0
0
1.2
–
0
0
0
1.2
–
AFC switch (S = off)
1.2
1.5
1.5
1.5
2.7
3.0
1.2
0
1.2
1.2
1.2
1.5
2.7
3.0
1.2
0
1.2
1.5
1.5
1.5
5.3
6.0
2.6
0
1.2
1.2
1.2
1.5
5.3
6.0
2.6
0
3
AGC (AM)/AFC (FM)
Detector output
AF input
–
–
1.5
2.7
3.0
1.2
0
1.5
5.3
6.0
2.6
0
Ripple filter
Supply voltage
AF output
AF ground
TEMIC Semiconductor
3 (15)
Rev. A1, 06-Apr-98
U2510B
Absolute Maximum Ratings
Parameters
Supply voltage
Symbol
Value
13
Unit
V
V
S
Power dissipation
Ambient temperature range
P
900
–20 to +75
mW
°C
tot
T
amb
Electrical Characteristics
V = 6 V, T
= 25°C, test circuit (figure 16), unless otherwise specified
S
amb
Parameters
Test Conditions / Pins
Symbol
Min.
2.5
Typ.
Max.
9 *
Unit
Supply voltage range
V
V
V
V
S
Oscillator stop voltage
Operating temperature range
Supply quiescent current
2.2
S
T
–20
+75
°C
V = V = V = 0;
i1
i2
4
AM (S = AM)
I
I
I
4.0
6.5
2.2
mA
mA
mA
2
S
FM (S = FM)
2
S
S
TAPE (S = Tape)
2
Regulated voltage
Pin 8
V
Ref
2.4
V
Audio amplifier V (Pin 24), test point: V (Pin 27) f = 1 kHz
i3
o
AF measuring range: 30 Hz to 20 kHz, S = Tape, S = A, S = A
2
4
5
Input resistance
Pin 24
R
j
100
k
Closed loop voltage gain
GV = 20 log (V /V )
af1 o i3
V = 10 mV
i3
GV
40
dB
af1
Output voltage
V = 100 mV, S = B
V
o
0.7
3
mV
i3
4
High–end cut-off frequency
f (–3 dB)
S = B
5
f
f
13
0.8
kHz
kHz
c
c
c
Supply-voltage rejection ratio
SVRR = 20 log (V /V )
hum o
V
hum
= 200 mV,
f
= 200 Hz, S = B
SVRR
32
dB
V
hum
4
Noise voltage
S = B, V = 0
V
n
300
1000
4
i3
AF output power
THD = 10 %, R = 8
L
V = 4.5 V
P
o
P
o
P
o
225
420
1000
mW
mW
mW
S
V = 6.0 V
400
S
V = 9.0 V
S
Distortion
P = 50 mW, R = 8
d
0.6
%
o
L
FM section, V = 60 dB V, f = 98 MHz, f = 1 kHz, dev. = 22.5 kHz, f = 10.7 MHz,
i2
i2
m
iIF
AF measuring range: 300 Hz to 20 kHz, S = FM, S = A, S = B, test point: V (Pin 23)
2
1
6
D
FM front-end voltage gain
GV = 20 log (V / V )
FM iIF i2
S = B, V = 40 db V
GV
FM
30
85
dB
mV
k
1
i2
Recovered audio voltage
Detector output resistance
Detector output distortion
Pin 23
Pin 23
VD
af
R
Do
7.5
dev. = 75 kHz
V = 60 dB V
THD
THD
0.5
0.8
%
%
i2
V = 105 dB V
i2
*
U2510B-M__T: max. 6 V
4 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
Electrical Characteristics (continued)
V = 6 V, T
= 25°C, test circuit (figure 16), unless otherwise specified
S
amb
Parameters
Test Conditions / Pins
m = 30%
Symbol
AM
Min.
Typ.
25
Max.
Unit
dB
AM rejection ratio
RF sensitivity
RR
(S+N)/N = 26 dB
(S+N)/N = 46 dB
V
9
22
dB V
dB V
i2
V
i2
Limiting threshold (-3 dB)
Mute voltage
V
i2
3
dB V
Test point: Mute
V = 0
V = 60 dB V
i2
V
mute
V
mute
1.8
0.4
V
V
i2
Mute depth
Referred to V at V = 0
0 i2
S = A
S = C
6
MD
MD
26
20
dB
dB
6
AFC holding range
f
> f , S = A, S = A
OSC in 3 6
V
10 dB V
FHR
FHR
FHR
no AFC
180
i2
i2
V = 20 dB V
V = 80 dB V
i2
kHz
kHz
220
LED current
I
5.5
mA
mV
LED
Oscillator voltage
eZ
= 2.5 k
Pin 7
V
180
25
load
OSC
AM section V = 60 dB V, f = 1.6 MHz, f = 1 kHz, m = 30%, f = 455 kHz,
AF measuring range: 300 Hz to 20 kHz, (S = AM, S = B, test point: V )
i1
i1
m
iIF
2
1
D
AM front end voltage gain
GV = 20 log (V /V )
GV
AM
dB
AM
iIF i1
V = 20 dB V, S = A
i1
1
Recovered audio voltage
Detector output resistance
Detector output distortion
V
70
mV
k
D af1
Pin 23
R
7.5
Do
V = 60 dB V
V = 105 dB V
i1
THD
THD
1
3
%
%
i1
RF sensitivity
(S+N)/N= 10 dB
(S+N)/N= 26 dB
(S+N)/N= 46 dB
V
0
16
35
dB V
dB V
dB V
i1
V
i1
V
i1
AGC figure of merit referred
V = 105 dB V, voltage
i1
to V
drop (V ) = –10 dB
FOM
100
3.1
5.5
160
dB
k
D af
D af
IF input resistance
LED current
Pin 16
Pin 5
Z
i
I
mA
mV
LED
Oscillator voltage
V
OSC
TEMIC Semiconductor
5 (15)
Rev. A1, 06-Apr-98
U2510B
10
10000
1000
100
T
amb
=25°C
FM
8
6
AM
R =4
L
4
2
f=1kHz
d=10%
Tape
8
16
32
T
amb
=25°C
0
10
12
50
2
4
6
8
10
0
10
V ( V )
S
9510396
95 10397
95 10398
V ( V )
9510399
S
Figure 3. Quiescent current
Figure 6. AF section: Max. output power
50
40
40
without
treble control
f=200Hz
f=100Hz
32
24
16
30
with treble control
20
10
V
=200mV
V =5mV
hum
i
V =6V
V =6V
S
S
R =8
R =8
L
L
T
amb
=25°C
T
=25°C
amb
0
0.01
100
12
0.1
1
10
2
4
6
8
10
f ( kHz )
95 10400
V ( V )
S
Figure 4. AF section
Figure 7. AF section: Supply-voltage rejection ratio
10
8
2.0
f=1kHz
=25°C
V =6V
S
T
T
amb
=25°C
amb
1.6
1.2
0.8
R =∞
3
6
V =3V
S
V =6V
S
V =9V
S
100k
68k
R =32
L
R =8
L
R =8
L
4
2
0
0.4
0
10000
120
1
10
100
1000
–20
0
20 40
60
80
100
P ( mW )
o
95 10403
V ( dB V )
i
Figure 5. AF section: Distortion
Figure 8. FM section: Mute voltage
6 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
0
–20
–40
–60
6
5
4
3
2
AM
S+N(m=80%)
S+N(m=30%)
I
LED
FM
V =6V
S
f =1.6MHz
i1
N
f
=1kHz
AF
T
amb
=25°C
–80
V =6V
S
1
0
T
amb
=25°C
d(m=80%)
d(m=30%)
–100
120
120
–20 20
0
40 60 80
V ( dB V )
100
0
20
40
60
80
100
95 10404
95 10407
V ( dB V )
i
i
Figure 9. AM section: Demodulator output level
Figure 11. AM/FM level indicator current
0
2.0
V =6V
S
V =10mV
i3
f
f
T
=1MHz
=10kHz
AF
1.2
0.8
–20
–40
AF
=25°C
amb
Treble Voltage V
8
V =6V
S
–60
–80
0.4
0
f =1.6MHz
i1
T
amb
=25°C
Treble Voltage = 0
2.5
120
0
0.5
1
1.5
V ( V )
2
20
0
20 40
60
80 100
95 10406
95 10408
V ( dB V )
i
4
Figure 10. Volume control range characteristics
Figure 12. AM section: AGC voltage (at Pin 22)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
7 (15)
U2510B
0
S+N( f= 75kHz)
V = 6 V
S
–20
–40
–60
f
f
= 98 MHz
i2
S+N( f= 22.5kHz)
AM(m=30%)
= 1 kHz
AF
T
amb
= 25°C
–80
d( f= 75kHz)
N
d( f= 22.5kHz)
–100
80
100 120
–20
0
20
40
60
95 10401
V ( dB V )
i
Figure 13. FM section: Demodulator output level
0
R =0
3
S+N
68k
–20
V = 6 V
R = 8
L
S
AM
100k
P = 50 mW at
∞
o
V
= 60 dB V
= 98 MHz
–40
–60
i2
f
f
i2
= 1 kHz
AF
f = 22.5 kHz
m
= 30%
= 25°C
AM
N
d
T
amb
–80
–100
120
100
–20
0
20
40 60
V ( dB V )
80
95 10402
i
Figure 14. FM section: Audio output level
S+N
0
–20
–40
N
P = 50 mW at
o
d
V
= 60 dB V
i1
–60
–80
R = 8
L
f
f
= 98 MHz
= 1 kHz
i1
AF
m = 80%
= 25°C
T
amb
–100
–20
120
0
20
40
60 80
100
95 10405
V ( dB V )
i
Figure 15. AM section: Audio output level
8 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
Test Circuit
R5
150 Ω
T2
C2
C3
C4
C5
B
B
C24
A
A
R6
LA
43 pF 22 pF
18 pF
22 pF
Vi1
L1 L2
S4
S5
R4
2.2 kΩ
(50 Ω)
100 Ω
150 µH
100 nF
C25
R7
T4
C7 C6
R3
Vi2
Ω
150 k
R8
(50 Ω)
75 Ω
10 nF
C25
C19
5.6 pF
4.7 µF 22 nF
C23
50 Ω
100
pF
68 nF
C
B
C20
S6
Vmute
A
C8
4.7 µF
C24
18 pF
22 nF
AM IFT
T1
14
13
16
12
17
11
10
19
9
8
7
6
5
4
3
2
1
455 kHz
CF1
U2510B
15
20
23
25
26
18
21
22
24
27
28
CF2
C22
C9
S1
B
A
B
A
A
10.7 MHz
R1
S3
B
off
10 nF
LED
10 nF
D1
C15
390 Ω
220 µF
R2
Tape
S2
ViIF
C14
100 nF
C10
10 µF
C11
10 nF
C12
C13
FM
AM
R9
3 kΩ
10 kΩ
RL
10 µF 470 µF
C21
Ω
8
/
2 W
10 nF
ILED
VD
Vi3
VS
Vo
GND
13913
Figure 16. Test circuit
Application
General
The U2510B is a bipolar monolithic IC for use in radio One of the general advantages of using the U2510B is the
sets, for example, headphone receivers, radio recorders fact that all receiver functions (including the options) are
and clock radios. The IC contains all AM, FM, AF and integrated and tested on a system level. Therefore, two
switching function blocks necessary to construct these additional cost-savings are achieved by:
kinds of radio receivers using only few components
around the IC. In the design, special efforts were made to
problems and
get good performance for all AM bands (short and long
1. Shorter development time through less technical
2. Higher reproductivity and low reject level in the set
wave).
production line.
The implementation of enhanced functions (options)
Another advantage, due to the technology of the
makes it possible to improve the radio’s performance and
U2510B, is the wide operating voltage range, espe-
to produce radios with interesting features. In this case
cially the upper limit (13 V). This feature allows the
few (external) parts have to be changed or added. By
use of soft power supply for line powered radios
using all or some of the options offered by the U2510B
which can also reduce the set’s total cost.
different types or classes of radios can be designed to the
customer’s requirements with the same IC.
TEMIC Semiconductor
9 (15)
Rev. A1, 06-Apr-98
U2510B
Option e) improves the tuning behavior substantially. The
special design of the on-chip AFC function means that
common disadvantages such as asymmetrical slope,
(chip-) temperature effects and unlimited holding range
are avoided. As mentioned in the “Pinning Description
Table”, the AFC slope has to be inverted when the local
oscillator (LO) frequency has to be below the receiving
frequency. This can be achieved by connecting Pin 21 to
the potential of Pin 8. In addition to the options described
above, the following proposals are implemented in the
circuit diagram (figure 18), too:
Circuit Example
Figure 17 shows a circuit diagram for low end AM/AF
radios using the U2510B. Figure 18 shows a circuit
diagram of AM/AF radio for higher class designs using all
possible options of the U2510B. The layout of the PC
board, shown in figure 19, is suitable for both the circuit
example shown in figure 17 and the circuit example
shown in figure 18. The associated coil, varicon and filter
specifications are listed in the table: COIL DATA and
SPECIAL COMPONENT PARTS. The circuit diagram
(figure 18), has the following options compared to the
circuit diagram (figure 17) (the additional parts, which
have to be provided, are listed in parentheses):
An FM IFT is applied. This improves the channel
selectivity and minimizes substantially the spurious
responses caused by the FM ceramic filter (CF ). With
2
a) Soft mute and high cut control in FM mode (1 cap.)
the choice of the winding ratio of this IFT, the FM
front end gain can be matched to other values if neces-
sary.
b) Electronic treble control in AM, FM and TAPE mode
(1 pot.)
c) On-chip mode control for TAPE application
d) RF AGC in FM mode (1 capacitor)
In the FM RF input section, the low cost antenna filter
(L , C ) is replaced by a special band pass filter
5
15
(PFWE8). Such a BPF protects the FM front end
against the out-off-band interference signals (TV
channels, etc.) which could disturb the FM reception.
e) AFC, adjustable to the correct polarity and slope
(1 cap.)
f) Tuning indication using LED as an indicator
(1 LED, 1 cap.)
Design Hints
Option a) reduces the interstation noise by the two
functions: soft mute and HCC. Both are controlled by the
mute voltage (Pin 1). The soft mute reduces the loudness
only, while the HCC reduces the high-end audio cut-off
frequency of the audio preamplifier, when the signal level
falls below a given threshold. This signal level threshold
as well as the mute depth can be reduced by adding a
The value of the power supply blocking capacitor C
13
should not be below 470 F. In addition, this capacitor
should be placed near Pin 26. This will help to avoid
unacceptable noise generated by noise-radiation from the
audio amplifier via the bar-antenna. In designs, where the
supply voltage goes below 2.5 V, the value of the blocking
capacitor (C ) should be chosen as 47 F or even higher.
7
resistor (R ) or by increasing the FM front–end gain.
3
To achieve a high rejection of short wave reception in
medium wave operation, the LO amplitude at Pin 5
should not exceed approximately 200 mV. This LO
amplitude depends on the LO transformer’s Q and its
turns ratio. For the LO transformer type described in the
Option b) allows the treble control for all operating modes
without the need of an additional capacitor. This concept
leads to a smooth and correct treble control behavior
which is an improvement compared to the controlled RC
network normally used.
“Coil Data Table”, a resistor R (2.2 k for example) in
4
parallel to the secondary side of the AM LO transformer
Option c) is very useful for application in radio
cassette-recorders, for instance. In TAPE mode, the
AM/FM receiver blocks are completely switched off and
the signal from the tape recorder can be fed to the audio
amplifier’s input directly. This saves quiescent current
and makes the TAPE switching easy. However, to
minimize switching noise by the mode switch, the
following switch sequence should be chosen: AM, FM,
TAPE.
T is recommended. To minimize feedback effects in the
2
RF/IF part in FM mode, the capacitor C should be placed
6
as near to Pins 8 and 20 as possible.
As shown in the application circuit diagrams (figures 17
and 18), in FM mode ceramic filter devices are used for
channel selection (CF ) while for FM, demodulation in
2
LC-discriminator circuit (T , C , C ) is used instead of
4
24 25
a ceramic discriminator device.
Option d) improves the strong signal behavior by Such an LC discriminator circuit can be easily matched
protecting the FM mixer against overload. This is to the FM IF selectivity block by its alignment. The zero-
provided by the integrated broad-band-width RF AGC. If crossing of the discriminator can be detected at the
necessary, the AGC threshold can be decreased by a demodulator output (Pin 23). The zero-crossing voltage
resistor, loading Pin 11 to GND (not shown).
is equal to half of the regulated voltage at Pin 8.
10 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
The alignment of the LC-discriminator circuit should be In general, ceramic discriminator devices can be used,
done with little or no effect on the AFC function. This can too. In this case, the effect of unavoidable spreads in the
be realized by:
frequency characteristics of these case ceramic devices in
conjunction with the IC characteristic has to be consid-
–
–
–
switching Pin 21 to open-circuit
connecting Pin 1 to a voltage source of 2 V ered. For example, mismatches of the characteristics
using a low signal level for alignment.
between selectivity block and FM discriminator will lead
to an increased signal-to-noise ratio at low signal level as
well as to a higher demodulation distortion level or to an
asymmetrical AFC.
Application Circuits
Antenna
FM AM
L3
T2
C2
C3
C4
C5
Volume
P1
C16
2 pF
27 pF
6 pF
22 pF
50 kΩ
L1 L2
33 pF
C18
C17
33 pF
33 pF
L4
T4
C7 C6
C25
100 pF
4.7 µF 22 nF
C8
C24
18 pF
4.7 µF
AM IFT
T1
14
15
13
16
12
17
11
18
10
9
8
7
6
5
4
3
2
1
455 kHz
CF1
U2510B
19
20
23
25
26
21
22
24
27
28
CF2
C9
10.7 MHz
C15
S1
R1
10 nF
220 µF
390 Ω
100 nF
C14
VS
Z = 8 Ω
C10
4.7 µF
C11
10 nF
C12
C13
S2
AM
4.7 µF 470 µF
FM
13915
Figure 17. Application circuit (low cost)
TEMIC Semiconductor
11 (15)
Rev. A1, 06-Apr-98
U2510B
Antenna
FM
AM
Volume
Treble
T2
L3
C2
C3
C4
C5
P1
P2
2 pF
27 pF
6 pF
22 pF
50 kΩ
50 kΩ
L1 L2
R4
BPF 1
2.2 kΩ
T4
C25
C7 C6
100 pF
C23
4.7 µF 22 nF
68 nF
(R3)
C20
22 pF
11
C19
5.6 pF
C8
4.7 µF
C24
18 pF
Mute
Adj.
AM IFT
14
15
13
16
12
17
10
9
8
7
6
5
4
3
2
1
T1
455 kHz
CF1
U2510B
AM IFT
T3
19
20
23
25
26
18
21
22
24
27
28
CF2
C22
C9
10.7 MHz
C15
220 µF
S1
100 pF
10 nF
LED
22 nF
100 nF
C14
D1
R2
VS
S2
AM
Tape
FM
Ω
10 k
C10
10 µF
C11
C12
C13
C21
10 nF
10 nF
4.7 µF 470 µF
13914
IN Tape
Figure 18. Application circuit (upgraded) R2 only if VS > 8 V
Figure 19. PC-board
12 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
Coil Data and Special Component Part
Part
Stage
L or C
between
Q between
0
Wire diameter/mm
Terminal No.
Type
Manufacturer
0
Number of turns
T
T
AM IFT
180 pF
1 to 3
90
1 to 3
0.07
1 to 2
111
0.07
2 to 3
35
0.07
4 to 6
7
7MC-7789N
Toko
21K7-H5
Mitsumi
1
2
AM OSC
270 H
1 to 3
125
1 to 3
0.06
1 to 3
107
0.06
4 to 6
29
7TRS-8441
Toko
L-5K7-H5
Mitsumi
T
T
L
L
L
FM IFT
(optional)
100 pF
1 to 3
0.09
1 to 2
3
0.09
2 to 3
7
0.09
4 to 6
2
mat.:
7P A119 AC
Toko
3
4
1
2
4
FM discrimi-
nator
100 pF
1 to 3
0.09
1 to 3
10
mat.:
7P A119 AC
Toko
FM RF
air coil
4 mm diam.
0.62
3.75
0.62
FM OSC
air coil
4 mm diam.
3.75
0.62
FM antenna
air coil
4 mm diam.
4.75
L
AM bar antenna
(optional)
L: 630 H
total turns : 96
tap: 19
3
BPF1
PFWE8 (88 to 108 MHz)
Soshin Electric Co.
CF
CF
CF
SFU-455B
BFCFL-455
Murata
Toko
1
2
3
SFE10.7MA5
CFSK 107M1
Murata
Toko
(optional)
CDA10.7MC1
Murata
Toko
C
1
Variable capacitor
HD22124
AM/FM
4 mm
3 mm
80 mm
3
2
4
4
18 mm
6
C1
Pin 10 Pin 8
Coil, bottom view
Air coil
AM bar antenna
13931
Figure 20.
TEMIC Semiconductor
13 (15)
Rev. A1, 06-Apr-98
U2510B
Package Information
Package SDIP28
Dimensions in mm
27.5
27.1
10.26
10.06
4.8
4.2
0.9
3.3
8.7
8.5
0.35
0.25
0.53
0.43
12.2
11.0
23.114
1.778
technical drawings
according to DIN
specifications
1
13044
14 (15)
TEMIC Semiconductor
Rev. A1, 06-Apr-98
U2510B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements
to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TEMIC Semiconductor
15 (15)
Rev. A1, 06-Apr-98
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