U2759B [TEMIC]
IF Signal Processing for DAB; 中频信号处理数字音频广播型号: | U2759B |
厂家: | TEMIC SEMICONDUCTORS |
描述: | IF Signal Processing for DAB |
文件: | 总9页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
U2759B
IF Signal Processing for DAB
Description
The U2759B is a bipolar integrated IF signal processing circuit. It is designed for DAB (Digital Audio Broadcasting)
applications.
Features
High linearity of the complete circuit
3-stage gain controlled wideband amplifier
Internal AGC loops
AGC time constants and thresholds adjustable
Mixer: double balanced high current Gilbert Cell
Block Diagram
DC
9144
11
16
IF1IN
IF2OUT
6
7
1
IF1IN
NC
VS
3
14
AGCPRE
Bandgap
4
2
GND
GND
THRPRE
15
8
9
10
12
5
13
VREF
BG
LO LO
AGCT
THRIF
Figure 1.
Ordering and Package Information
Extended Type Number
U2759B-A
Package
DIP16
Remarks
U2759B-AFL
U2759B-AFLG3
SO24
SO24
Taping according ICE-286-3
TELEFUNKEN Semiconductors
1 (9)
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Pin Description
Pin
1
2
3
4
Symbol
IF1IN
Function
1
16
15
14
13
12
IF1IN
IF1IN
IF1 input
THRPRE AGC-threshold for pre-amplifier
AGCPRE AGC for pre-amplifier
GND
2
THRPRE
GND
VS
Ground
5
AGCT
AGC time constant for
IF amplifier
AGCPRE
3
6
7
8
9
IF2OUT IF2 output
GND
4
BG
NC
LO
LO
Not connected
Local oscillator
Local oscillator
AGCT
5
VREF
10
11
12
13
14
15
16
THRIF AGC-threshold for IF amplifier
6
7
8
11 DC
IF2OUT
NC
DC
VREF
BG
DC-level
Reference voltage
Bandgap
THRIF
10
9
VS
GND
IF1IN
Supply voltage
Ground
IF1 input
LO
LO
12585
Figure 2. Pinning DIP16
Pin
1
2
3
4
Symbol
IF1IN
Function
IF1IN
GND
1
24
23
IF1IN
THRPRE
NC
IF1 input
THRPRE AGC-threshold for pre-amplifier
NC Not connected
AGCPRE AGC for pre-amplifier
GND
AGCT
2
3
4
5
6
7
8
9
22 NC
21
5
6
Ground
AGC time constant for
IF amplifier
Not connected
NC
AGCPRE
GND
AGCT
NC
7
8
9
NC
20 VS
IF2OUT IF2 output
NC
NC
NC
LO
LO
NC
NC
Not connected
BG
19
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Not connected
Not connected
Local oscillator
Local oscillator
Not connected
Not connected
18 VREF
DC
17
IF2OUT
NC
THRIF
NC
16
15
THRIF AGC threshold for IF amplifier
DC
VREF
BG
VS
NC
NC
GND
IF1IN
DC-level
10
11
12
NC
Reference voltage
Bandgap
Supply voltage
Not connected
Not connected
Ground
14
13
NC
NC
LO
LO
12584
IF1 input
Figure 3. Pinning SO24
2 (9)
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Pin Description for DIP16
IF1IN
AGCPRE
The input voltage is fed via Pins 1 and 16 to the first stage
of the 3 stage gain-controlled wide-band amplifier. The
first stage has an internal dc voltage supply with an
internal resistance of 2 k to connect the SAW filters
directly.
Pin 3 is an open-collector output. Depending on the input
level, a control voltage can be generated for the external
pre-stage by using an external voltage divider. This
prevents an overdrive of input IF1. The threshold for
activation of the open-collector output is adjusted with
Pin 2.
9229
1
1.2 k
1.2 k
16
3
3 k
3 k
9227
Figure 4.
THRPRE
The control of a pre-stage can be adjusted at Pin 2 by using
an external potentiometer switched against ground. With
increasing voltage at Pin 2, control of the (external) pre-
stage does not become active until there is a high input
level at IF1. If Pin 2 is not connected, the control only
becomes active if the input is overdriven.
Figure 6.
IF2OUT
The product of input signal IF1 and the oscillator
frequency (Pins 8 and 9) can be found at Pin 6. Here it
concerns the emitter follower output with integrated
current sink. The output voltage IF2 is twice as high as the
difference between the voltage at Pin 10 and Pin 11.
6
3 k
2
2 k
9242
9228
Figure 5.
Figure 7.
TELEFUNKEN Semiconductors
3 (9)
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
LO
AGCT
The control voltage for the wide–band amplifier is
generated by using the external capacitor at Pin 5. By
integration of the control current generated in the IC,
there is a high control voltage if there is a large input level
at IF1 and a low control voltage if there is a low input
level.
The externally generated oscillator frequency is supplied
via crosspoint capacitances at Pin 8 and /or Pin 9. If the
oscillator frequency is not symmetrically connected, each
open pin has to be blocked against ground.
8
9
50
5.6 k
5.6 k
5
9230
9243
Figure 10.
Figure 8.
THRIF
The control threshold for the AGC is adjusted by using an
external voltage.
DC
The dc mean value of the output signal is adjusted by
using an external voltage at Pin 11. The voltage at Pin 11
always has to be higher than the voltage at Pin 10.
5 k
11
10
9245
9244
Figure 9.
Figure 11.
4 (9)
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
VREF
Functional Description
A stabilized voltage is available at Pin 12 on to which an
external voltage divider for supplying Pin 10 and Pin 11
can be connected.
The U2759B consists of a controllable wideband ampli-
fier, a mixer and AGC-block.
The input voltage V is applied at Pin 1 and 16 and it is
if1
At Pin 13, the internally generated temperature stable
reference voltage is blocked against ground. This voltage
must not be loaded by external circuitry.
fed via a 3-stage controlled wideband amplifier to the
mixer. The oscillator voltage can be applied symmetri-
cally as well as unsymmetrically.
The mixed signal is used in order to generate the AGC-
voltage. The mixed signal therefore is fed to a comparator
which charges or discharges an external capacitor depen-
dent on the signal level. The threshold of the comparator
can be adjusted externally. The generated voltage con-
trols the wideband amplifier.
More information concerning the parameters:
Noise ratio of all ICs:
Typically 11.2 dB (SSB)
Intercept point 3rd order:
Typically 58 dB (2 V at Pin 6)
ss
The generated control voltage can be used also for an
additional external preamplifier. This AGC protects the
IF1 input against overload.
13
The amplitude as well as the superimposed DC-level of
the output voltage V can be adjusted by an external
IF2
voltage. V
500 A).
is therefore available at Pin 12 (max.
REF
12
Upper limiting threshold
4.5 V
DC-level
(Pin 11)
V
(Pin 6)
P
IF AGC threshold
(Pin 10)
9246
1.7 V
Lower limiting threshold
Figure 12.
12586
Figure 13. Adjustment of output level
TELEFUNKEN Semiconductors
5 (9)
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Absolute Maximum Ratings
Reference point Pin 4, unless otherwise specified
Parameters
Symbol
V
S
Value
10
Unit
V
Supply voltage
Supply current
Output current
Max. power dissipation
Junction temperature
Ambient temperature range
Storage temperature range
Pin 14
Pin 6
I
55
5.0
550
+125
mA
mA
mW
°C
°C
°C
S
I
OUT
P
T
j
T
amb
–40 to +85
–40 to +125
T
stg
Thermal Resistance
Parameters
Symbol
Value
60
60
Unit
K/W
K/W
Junction ambient
Junction ambient
DIP16
SO24
R
thJA
R
thJA
Electrical Characteristics
T
amb
= 25°C, V = 8 V, reference point Pin 4, unless otherwise specified
S
Parameters
DC-supply
Supply voltage
Supply current
IF-amplifier
Test Conditions / Pins
Pin 14
Symbol
Min.
6.8
Typ.
Max.
Unit
V
S
8.0
45
10.0
55
V
mA
I
S
Pin 1 to 16
Input sensitivity
Input impedance
Input capacitance
IF-AGC
2 Vpp at Pin 6
V
R
C
80
1.2
2
120
V
rms
k
pF
in
in
in
Pin 5
IF gain control range
AGC capacitor
Preamp-AGC
Available -AGC current
IF2 output
G
C
60
66
4.7
dB
F
V
5
Pin 3
Pin 6
I
4
mA
3
IF2-Signal bandwidth
(–3dB)
Lower limiting threshold
Upper limiting threshold
Signal adjustm.
DC level (external)
Reference voltage
Available current
B
12
2
MHz
V
lim1
1.7
4.5
V
V
V
lim2
Pin 10,11,12
V
11
4
V
V
A
Pin 12
Pin 12
V
5.2
ref
I(V )
500
ref
6 (9)
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Application Circuit
VRef
DC
AGC
VS
level threshold
(500 A max)
22
F
5.5 k
2.5 k
5 k
Bandgap
4.7
10 nF
9
F
100 nF
Local
oscillator
16
15
14
13
12
11
10
IF1 in
U2759B
1
2
3
5
6
4
7
8
n.c.
10 nF
4.7
F
10 k
22
F
Local
oscillator
AGC
time
Threshold
pre-amplifier
AGC
constant
3 k
VS
9 k
Pre-amplifier
AGC
IF 2
out
12577
Figure 14.
TELEFUNKEN Semiconductors
7 (9)
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Dimensions in mm
7.82
7.42
Package DIP16
20.0 max
4.8 max
0.5 min
6.4 max
3.3
0.39 max
1.64
1.44
0.58
0.48
9.75
8.15
2.54
17.78
16
15
14
13
12
11
10
9
technical drawings
according to DIN
specifications
13015
1
2
3
4
5
6
7
8
9.15
8.65
Package SO24
15.55.
15.30
7.5
7.3
2.35
0.25
1.27
0.4
0.25
0.10
10.50
10.20
13.97
technical drawings
according to DIN
specifications
1
8 (9)
TELEFUNKEN Semiconductors
Rev. A1, 06-Sep-96
Preliminary Information
U2759B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
9 (9)
Rev. A1, 06-Sep-96
Preliminary Information
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