U2759B [TEMIC]

IF Signal Processing for DAB; 中频信号处理数字音频广播
U2759B
型号: U2759B
厂家: TEMIC SEMICONDUCTORS    TEMIC SEMICONDUCTORS
描述:

IF Signal Processing for DAB
中频信号处理数字音频广播

射频和微波 射频混频器 微波混频器 局域网
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U2759B  
IF Signal Processing for DAB  
Description  
The U2759B is a bipolar integrated IF signal processing circuit. It is designed for DAB (Digital Audio Broadcasting)  
applications.  
Features  
High linearity of the complete circuit  
3-stage gain controlled wideband amplifier  
Internal AGC loops  
AGC time constants and thresholds adjustable  
Mixer: double balanced high current Gilbert Cell  
Block Diagram  
DC  
9144  
11  
16  
IF1IN  
IF2OUT  
6
7
1
IF1IN  
NC  
VS  
3
14  
AGCPRE  
Bandgap  
4
2
GND  
GND  
THRPRE  
15  
8
9
10  
12  
5
13  
VREF  
BG  
LO LO  
AGCT  
THRIF  
Figure 1.  
Ordering and Package Information  
Extended Type Number  
U2759B-A  
Package  
DIP16  
Remarks  
U2759B-AFL  
U2759B-AFLG3  
SO24  
SO24  
Taping according ICE-286-3  
TELEFUNKEN Semiconductors  
1 (9)  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Pin Description  
Pin  
1
2
3
4
Symbol  
IF1IN  
Function  
1
16  
15  
14  
13  
12  
IF1IN  
IF1IN  
IF1 input  
THRPRE AGC-threshold for pre-amplifier  
AGCPRE AGC for pre-amplifier  
GND  
2
THRPRE  
GND  
VS  
Ground  
5
AGCT  
AGC time constant for  
IF amplifier  
AGCPRE  
3
6
7
8
9
IF2OUT IF2 output  
GND  
4
BG  
NC  
LO  
LO  
Not connected  
Local oscillator  
Local oscillator  
AGCT  
5
VREF  
10  
11  
12  
13  
14  
15  
16  
THRIF AGC-threshold for IF amplifier  
6
7
8
11 DC  
IF2OUT  
NC  
DC  
VREF  
BG  
DC-level  
Reference voltage  
Bandgap  
THRIF  
10  
9
VS  
GND  
IF1IN  
Supply voltage  
Ground  
IF1 input  
LO  
LO  
12585  
Figure 2. Pinning DIP16  
Pin  
1
2
3
4
Symbol  
IF1IN  
Function  
IF1IN  
GND  
1
24  
23  
IF1IN  
THRPRE  
NC  
IF1 input  
THRPRE AGC-threshold for pre-amplifier  
NC Not connected  
AGCPRE AGC for pre-amplifier  
GND  
AGCT  
2
3
4
5
6
7
8
9
22 NC  
21  
5
6
Ground  
AGC time constant for  
IF amplifier  
Not connected  
NC  
AGCPRE  
GND  
AGCT  
NC  
7
8
9
NC  
20 VS  
IF2OUT IF2 output  
NC  
NC  
NC  
LO  
LO  
NC  
NC  
Not connected  
BG  
19  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Not connected  
Not connected  
Local oscillator  
Local oscillator  
Not connected  
Not connected  
18 VREF  
DC  
17  
IF2OUT  
NC  
THRIF  
NC  
16  
15  
THRIF AGC threshold for IF amplifier  
DC  
VREF  
BG  
VS  
NC  
NC  
GND  
IF1IN  
DC-level  
10  
11  
12  
NC  
Reference voltage  
Bandgap  
Supply voltage  
Not connected  
Not connected  
Ground  
14  
13  
NC  
NC  
LO  
LO  
12584  
IF1 input  
Figure 3. Pinning SO24  
2 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Pin Description for DIP16  
IF1IN  
AGCPRE  
The input voltage is fed via Pins 1 and 16 to the first stage  
of the 3 stage gain-controlled wide-band amplifier. The  
first stage has an internal dc voltage supply with an  
internal resistance of 2 k to connect the SAW filters  
directly.  
Pin 3 is an open-collector output. Depending on the input  
level, a control voltage can be generated for the external  
pre-stage by using an external voltage divider. This  
prevents an overdrive of input IF1. The threshold for  
activation of the open-collector output is adjusted with  
Pin 2.  
9229  
1
1.2 k  
1.2 k  
16  
3
3 k  
3 k  
9227  
Figure 4.  
THRPRE  
The control of a pre-stage can be adjusted at Pin 2 by using  
an external potentiometer switched against ground. With  
increasing voltage at Pin 2, control of the (external) pre-  
stage does not become active until there is a high input  
level at IF1. If Pin 2 is not connected, the control only  
becomes active if the input is overdriven.  
Figure 6.  
IF2OUT  
The product of input signal IF1 and the oscillator  
frequency (Pins 8 and 9) can be found at Pin 6. Here it  
concerns the emitter follower output with integrated  
current sink. The output voltage IF2 is twice as high as the  
difference between the voltage at Pin 10 and Pin 11.  
6
3 k  
2
2 k  
9242  
9228  
Figure 5.  
Figure 7.  
TELEFUNKEN Semiconductors  
3 (9)  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
LO  
AGCT  
The control voltage for the wide–band amplifier is  
generated by using the external capacitor at Pin 5. By  
integration of the control current generated in the IC,  
there is a high control voltage if there is a large input level  
at IF1 and a low control voltage if there is a low input  
level.  
The externally generated oscillator frequency is supplied  
via crosspoint capacitances at Pin 8 and /or Pin 9. If the  
oscillator frequency is not symmetrically connected, each  
open pin has to be blocked against ground.  
8
9
50  
5.6 k  
5.6 k  
5
9230  
9243  
Figure 10.  
Figure 8.  
THRIF  
The control threshold for the AGC is adjusted by using an  
external voltage.  
DC  
The dc mean value of the output signal is adjusted by  
using an external voltage at Pin 11. The voltage at Pin 11  
always has to be higher than the voltage at Pin 10.  
5 k  
11  
10  
9245  
9244  
Figure 9.  
Figure 11.  
4 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
VREF  
Functional Description  
A stabilized voltage is available at Pin 12 on to which an  
external voltage divider for supplying Pin 10 and Pin 11  
can be connected.  
The U2759B consists of a controllable wideband ampli-  
fier, a mixer and AGC-block.  
The input voltage V is applied at Pin 1 and 16 and it is  
if1  
At Pin 13, the internally generated temperature stable  
reference voltage is blocked against ground. This voltage  
must not be loaded by external circuitry.  
fed via a 3-stage controlled wideband amplifier to the  
mixer. The oscillator voltage can be applied symmetri-  
cally as well as unsymmetrically.  
The mixed signal is used in order to generate the AGC-  
voltage. The mixed signal therefore is fed to a comparator  
which charges or discharges an external capacitor depen-  
dent on the signal level. The threshold of the comparator  
can be adjusted externally. The generated voltage con-  
trols the wideband amplifier.  
More information concerning the parameters:  
Noise ratio of all ICs:  
Typically 11.2 dB (SSB)  
Intercept point 3rd order:  
Typically 58 dB (2 V at Pin 6)  
ss  
The generated control voltage can be used also for an  
additional external preamplifier. This AGC protects the  
IF1 input against overload.  
13  
The amplitude as well as the superimposed DC-level of  
the output voltage V can be adjusted by an external  
IF2  
voltage. V  
500 A).  
is therefore available at Pin 12 (max.  
REF  
12  
Upper limiting threshold  
4.5 V  
DC-level  
(Pin 11)  
V
(Pin 6)  
P
IF AGC threshold  
(Pin 10)  
9246  
1.7 V  
Lower limiting threshold  
Figure 12.  
12586  
Figure 13. Adjustment of output level  
TELEFUNKEN Semiconductors  
5 (9)  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Absolute Maximum Ratings  
Reference point Pin 4, unless otherwise specified  
Parameters  
Symbol  
V
S
Value  
10  
Unit  
V
Supply voltage  
Supply current  
Output current  
Max. power dissipation  
Junction temperature  
Ambient temperature range  
Storage temperature range  
Pin 14  
Pin 6  
I
55  
5.0  
550  
+125  
mA  
mA  
mW  
°C  
°C  
°C  
S
I
OUT  
P
T
j
T
amb  
–40 to +85  
–40 to +125  
T
stg  
Thermal Resistance  
Parameters  
Symbol  
Value  
60  
60  
Unit  
K/W  
K/W  
Junction ambient  
Junction ambient  
DIP16  
SO24  
R
thJA  
R
thJA  
Electrical Characteristics  
T
amb  
= 25°C, V = 8 V, reference point Pin 4, unless otherwise specified  
S
Parameters  
DC-supply  
Supply voltage  
Supply current  
IF-amplifier  
Test Conditions / Pins  
Pin 14  
Symbol  
Min.  
6.8  
Typ.  
Max.  
Unit  
V
S
8.0  
45  
10.0  
55  
V
mA  
I
S
Pin 1 to 16  
Input sensitivity  
Input impedance  
Input capacitance  
IF-AGC  
2 Vpp at Pin 6  
V
R
C
80  
1.2  
2
120  
V
rms  
k
pF  
in  
in  
in  
Pin 5  
IF gain control range  
AGC capacitor  
Preamp-AGC  
Available -AGC current  
IF2 output  
G
C
60  
66  
4.7  
dB  
F
V
5
Pin 3  
Pin 6  
I
4
mA  
3
IF2-Signal bandwidth  
(–3dB)  
Lower limiting threshold  
Upper limiting threshold  
Signal adjustm.  
DC level (external)  
Reference voltage  
Available current  
B
12  
2
MHz  
V
lim1  
1.7  
4.5  
V
V
V
lim2  
Pin 10,11,12  
V
11  
4
V
V
A
Pin 12  
Pin 12  
V
5.2  
ref  
I(V )  
500  
ref  
6 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Application Circuit  
VRef  
DC  
AGC  
VS  
level threshold  
(500 A max)  
22  
F
5.5 k  
2.5 k  
5 k  
Bandgap  
4.7  
10 nF  
9
F
100 nF  
Local  
oscillator  
16  
15  
14  
13  
12  
11  
10  
IF1 in  
U2759B  
1
2
3
5
6
4
7
8
n.c.  
10 nF  
4.7  
F
10 k  
22  
F
Local  
oscillator  
AGC  
time  
Threshold  
pre-amplifier  
AGC  
constant  
3 k  
VS  
9 k  
Pre-amplifier  
AGC  
IF 2  
out  
12577  
Figure 14.  
TELEFUNKEN Semiconductors  
7 (9)  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Dimensions in mm  
7.82  
7.42  
Package DIP16  
20.0 max  
4.8 max  
0.5 min  
6.4 max  
3.3  
0.39 max  
1.64  
1.44  
0.58  
0.48  
9.75  
8.15  
2.54  
17.78  
16  
15  
14  
13  
12  
11  
10  
9
technical drawings  
according to DIN  
specifications  
13015  
1
2
3
4
5
6
7
8
9.15  
8.65  
Package SO24  
15.55.  
15.30  
7.5  
7.3  
2.35  
0.25  
1.27  
0.4  
0.25  
0.10  
10.50  
10.20  
13.97  
technical drawings  
according to DIN  
specifications  
1
8 (9)  
TELEFUNKEN Semiconductors  
Rev. A1, 06-Sep-96  
Preliminary Information  
U2759B  
Ozone Depleting Substances Policy Statement  
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of  
continuous improvements to eliminate the use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain  
such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer  
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized  
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,  
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or  
unauthorized use.  
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
TELEFUNKEN Semiconductors  
9 (9)  
Rev. A1, 06-Sep-96  
Preliminary Information  

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