U2761B [TEMIC]
DECT RF / IF IC; DECT射频/中频集成电路
| 型号： | U2761B |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | DECT RF / IF IC |
| 文件： | 总12页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2761B
DECT RF / IF IC
Description
The U2761B is an integrated circuit manufactured in FM demodulator, baseband filter, RSSI, TX preamplifier
TEMIC’s UHF5S technology, designed for DECT and power-ramping generator for power amplifier.
application. It contains rejection mixer, IF amplifier,
Features
Supply-voltage range 2.7 to 5.5 V
On-chip baseband filter
Low current consumption
LO switch and TX preamplifier
Ramp-signal generator for power amplifier
Few external components
Block Diagram
QUAD_TANK2
IF_TANK1
IF_TANK2
DEMOD_OUT
VS1 VS2
QUAD_TANK1
IF amp 1
IR mixer
IF amp 2
Demodulator
IF_IN1
IF_IN2
Bandgap
T/R switch
TX driver
MIXER_IN1
MIXER_IN2
TX_RF_OUT
OP_OUT
OpAmp
+
–
Ramp
generator
Control
logic
14657
MIXER_OUT1
RAMP_SET
MIXER_OUT2
TX_ON
RAMP_OUT
RX_ON
LO_IN2
OP_N
LO_IN1
OP_P
Figure 1. Block diagram
Ordering Information
Extended Type Number
U2761B
Package
SSO28
Remarks
TEMIC Semiconductor
1 (11)
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Pin Description
Pin
1
Symbol
RSSI
Function
Received signal strength
indicator output
Hardware power-up input
IF tank circuit Pin 1
IF tank circuit Pin 2
Ground
Mixer RF differential
input 1
OP_OUT
OP_P
RSSI
1
2
3
28
PU
27
26
2
3
4
5
6
PU
IF_TANK1
IF_TANK2
GND1
IF_TANK1
OP_N
DEMOD_OUT
IF_TANK2 4
25
24
MIXER_IN1
7
MIXER_IN2
Mixer RF differential
input 2
5
6
7
8
GND1
MIXER_IN1
MIXER_IN2
QUAD_TANK2
8
9
GND2
Ground
23 QUAD_TANK1
TX_RF_OUT Output of TX driver
amplifier
22
GND3
10
11
VS1
IF_IN1
Supply voltage input 1
IF amplifier differential
input 1
21
GND2
LO_IN2
12
IF_IN2
IF amplifier differential
input 2
LO_IN1
TX_RF_OUT 9
20
19
13
14
RAMP_OUT Ramp-signal output for PA
RAMP_SET
VS2
VS1
IF_IN1
IF_IN2
10
11
12
Slew-rate setting of ramp
signal
RX control input
TX control input
18
17
16
15
MIXER_OUT2
15
16
17
RX_ON
TX_ON
MIXER_OUT1 Mixer IF differential
output 1
MIXER_OUT2 Mixer IF differential
output 2
MIXER_OUT1
TX_ON
18
RAMP_OUT 13
14
19
20
21
22
23
24
25
26
27
28
VS2
Supply voltage input 2
Local oscillator input 1
Local oscillator input 2
Ground
RAMP_SET
RX_ON
LO_IN1
LO_IN2
GND3
14808
Figure 2. Pinning
QUAD_TANK1 Quadrature tank circuit 1
QUAD_TANK2 Quadrature tank circuit 2
DEMOD_OUT Output of demodulator
OP_N
OP_P
OP_OUT
OP – Input inverting
OP – Input non-inverting
OP – Output
2 (11)
TEMIC Semiconductor
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Absolute Maximum Ratings
All voltages are referred to GND (Pins 5, 8 and 22)
Parameters
Symbol
Value
6
Unit
V
Supply voltage
Pins 10 and 19
V
S
Junction temperature
Storage temperature
T
T
stg
150
–40 to +125
°C
°C
j
Thermal Resistance
Parameters
Symbol
R
thJA
Value
130
Unit
K/W
Junction ambient
Operating Range
All voltages are referred to GND (Pins 5, 8 and 22)
Parameters
Symbol
V
S
Min.
2.7
Typ.
3.0
Max.
5.5
Unit
V
Supply voltage
Pins 10 and 19
Ambient temperature
T
amb
–25
+25
+85
°C
Electrical Characteristics
Test conditions: V = 3.0 V, T
= 25°C, unless otherwise specified
S
amb
Parameters
Power supply
Total supply current
Test Conditions / Pins
TX
Symbol
Min.
Typ.
Max.
10
Unit
30
50
47
1
mA
mA
mA
A
RX
I
S
RX (RSSI only)
Standby, PU = GND
Pins 6, 7, 17 and 18
Pins 17 and 18
IR mixer
Image-rejection ratio
DSB noise figure
IRR
NFDSB=
NFSSB
20
10
dB
dB
Pins 17 and 18
Conversion gain
Output interception point
Input impedance
R
load
= 200
G
OIP3
Z
12
10
50
dB
dBm
conv
Pins 17 and 18
Pins 6 and 7
in
Input matching
Pins 6 and 7 VSWR
<2:1
in
LO switch and TX driver
Power gain (high)
Input impedance
Input matching
Isolation LO-TX
Pin 9, 20 and 21
@ P = –40 dBm
G
p
30
50
<2:1
dB
dB
in
Pin 20 or Pin 21 to GND
Z
in
Pins 20 and 21 VSWR
RX mode: LO Pin 20 or
in
Isol
37
Pin 21 to Pin 9
Output impedance
Maximum output power
Gain compression
Pin 9
Pin 9
Pin 9
Pin 9
Z
100
3
1
out
P
P
dBm
dBm
dBm
max
@ TX_RF_OUT
1dB
Output interception point
OIP3
10
TEMIC Semiconductor
3 (11)
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Electrical Characteristics (continued)
Test conditions: V = 3.0 V, T
= 25°C, unless otherwise specified
S
amb
Parameters
IF amplifier
Input impedance
Lower cut-off frequency
Upper cut-off frequency
Power gain
Test Conditions / Pins
Pins 3, 4, 11 and 12
Pins 11 and 12
Symbol
Min.
200
Typ.
Max.
400
Unit
Z
in
fl
90
130
85
MHz
MHz
dB
3dB
fu
3dB
G
p
Bandwidth of external tank
circuit
Noise figure
Pins 3 and 4
BW
10
9
MHz
dB
3dB
NF
RSSI
Pins 1, 6 and 7
P
P
DR
20
100
80
dB V
dB V
dB
RSSI sensitivity
RSSI compression
RSSI dynamic range
RSSI resolution
At IF_IN1, IF_IN2
Pins 6 and 7
min
max
Slope of the RSSI has to be
steady
Acc
±2
1
dB
s
RSSI rise time
P = 30 dB V to
in
t
r
f
100 dB V
Pin 1
Pin 1
RSSI fall time
P = 100 dB V to
in
t
1
s
30 dB V
Quiescent output current
@ P < 20 dB V at
in
IF_IN1, IF_IN2
I
I
30
A
out
out
Pin 1
Max. output current
@ P = 100 dB V at
in
IF_IN1, IF_IN2
150
A
Pin 1
FM demodulator
Pins 23, 24 and 25
Co-channel rejection ratio
@ P = –75 dBm at
in
IR-mixer input
Quality factor of external
tank circuit approx. 20
Nominal deviation of
signal ±288 kHz
CCRR
10
0.5
288
dB
Sensitivity
S
V/MHz
mVss
Amplitude of recovered
signal
A
Output-voltage DC range
Output impedance
AM rejection ratio
OpAmp
Pin 25 FMout
0.4
V – 0.4
S
V
k
dB
DC
Pin 25
Pin 25 AMRR
Pins 26, 27 and 28
Z
13
tbd
out
Power gain bandwidth
Excess phase
PGBW
d
10
80
MHz
°
R
load
= 1 k , C
= 15 pF
load
Input offset voltage
Open loop gain
Output voltage range
Common mode input
voltage
Pins 26 and 27
V
g
V
out
± 1
70
mV
dB
V
offs
Pin 28
0.3
0.3
V – 0.3
S
Pins 26 and 27
V
V – 0.3
S
V
in
Common mode rejection
ratio
Total harmonic distortion
Pin 28 CMRR
Pin 28 THD
tbd
tbd
dB
%
4 (11)
TEMIC Semiconductor
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Electrical Characteristics (continued)
Test conditions: V = 3.0 V, T
= 25°C, unless otherwise specified
S
amb
Parameters
Ramp generator
Min. output voltage
Max. output voltage
Rise time
Test Conditions / Pins
Pins 13 and 14
Accord. to PA RAMP input
Accord. to PA RAMP input
Symbol
Min.
Typ.
Max.
Unit
V
min
0.2
1.95
5
V
V
µs
µs
V
max
C
C
= 270 pF at Pin 14
= 270 pF at Pin 14
t
r
t
f
RAMP
Fall time
5
RAMP
Logic input levels (RX_ON, TX_ON) Pins 15 and 16
High input level
Low input level
High input current
Low input current
Power / standby
= ‘1’
= ‘0’
= ‘1’
= ‘0’
V
1.5
V
V
µA
µA
iH
V
0.5
5
5
iL
I
–5
–5
iH
IiL
Pin 2
Power-up high input level
Standby low input level
Power-up high input current PU = ‘1’
PU = ‘1’
PU = ‘0’
V
2.0
V
V
PU
V
0.7
40
100
0.1
1
PU,OFF
V
V
V
V
= 3 V,
= 5.5 V
= 0 V,
= 0.5 V
20
60
30
80
PU
PU
I
µA
µA
µs
PU
Standby low input current
PU = ‘0’
PU
PU
I
PU,OFF
Settling time
VS = 0 –> active operation
Settling time
standby –> active operation PU = 0 to PU = 1
Settling time Switched
active operation –> standby VS = 3 V to VS = 0
Switched
VS = 0 to VS = 3 V
Switched
t
soa
< 10
< 10
< 2
t
µs
ssa
sas
t
µs
Active Blocks Corresponding to RX / TX
Logic
Active Parts
PU RX_ON TX_ON OP Demo- IF amplifiers IR mixer RSSI RX switch TX switch TX driver
dulator
Ramp
generator
TX mode
RX mode
RSSI
1
1
1
0
1
0
1
1
0
off
on
off
on
off
on
on
off
off
off
on
on
off
off
off
on
on
off
off
off
on
on
off
off
on
off
off
off
on
on
off
off
off
off
on
off
off
off
off
1
1
off
off
off
off
off
off
Standby
X
0
X
0
TEMIC Semiconductor
5 (11)
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Typical Application Circuit
LO_IN
RX_ON
TX_ON
LC–tank
PCB
RX_DATA
28
27
26
–
25
24
23
22
21
20
19
18
17
16
15
Matching +
balun
+
Control–
logic LC
RX
TX
OP amp
Demodulator
SAW
Filter
TX
driver
IF
amp 2
IR
mixer
IF amp 1
Ramp
Matching +
balun
generator
RF/IF
U2761B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
RSSI
PU
VS
LC–Tank
MIXER_IN
TX_RF_OUT
RAMP_OUT
14658
Figure 3. Typical application circuit
Recommended Baseband Filter (f3dB
570 kHz)
14659
26
–
28
R1
25
R3
+
27
6.8k
13k
C1
18p
C2
5.6p
Figure 4. Recommended baseband filter
6 (11)
TEMIC Semiconductor
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Input / Output Interface Circuits
VS
VS
2
25k
25k
1
PU
RSSI
14660
14661
Figure 5.
VS
Figure 8.
VS
6
7
3
4
MIXER_IN1
MIXER_IN2
IF_TANK1
IF_TANK2
14663
14662
Figure 6.
Figure 9.
VS
VS
9
4.3k
11
12
TX_RF_OUT
IF_IN1
IF_IN2
14664
14665
Figure 7.
Figure 10.
TEMIC Semiconductor
7 (11)
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
19
10
VS2
VS1
VS
13, 28
AB–
control
RAMP_OUT
OP_OUT
22
8
GND3
GND2
5
GND1
14667
14666
Figure 11.
Figure 14.
VS
VS
14
RAMP_SET
15, 16
5k
5k
TX_ON
RX_ON
14669
14668
Figure 12.
Figure 15.
VS
VS
10k
10k
23
24
QUAD_TANK2
QUAD_TANK1
20
LO_IN1
21
LO_IN2
200
200
14670
14671
Figure 13.
Figure 16.
8 (11)
TEMIC Semiconductor
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
VS
17
18
MIXER_OUT1
MIXER_OUT2
25
DEMOD_OUT
14748
14672
Figure 17.
Figure 19.
VS
26
27
OP_N
OP_P
14673
Figure 18.
TEMIC Semiconductor
9 (11)
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Package Information
5.7
5.3
Package SSO28
Dimensions in mm
9.10
9.01
4.5
4.3
1.30
0.15
0.15
0.05
0.25
0.65
6.6
6.3
8.45
28
15
technical drawings
according to DIN
specifications
13018
1
14
10 (11)
TEMIC Semiconductor
Rev. A4, 10-Mar-98
Preliminary Information
U2761B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements
to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TEMIC Semiconductor
11 (11)
Rev. A4, 10-Mar-98
Preliminary Information
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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