U2790B-BFP [TEMIC]
Modulator, Quadraphase, 0MHz Min, 250MHz Max, SO-16, 16 PIN;
| 型号： | U2790B-BFP |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | Modulator, Quadraphase, 0MHz Min, 250MHz Max, SO-16, 16 PIN |
| 文件： | 总12页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
U2790B
1000-MHz Quadrature Modulator
Description
The U2790B is a 1000-MHz quadrature modulator using direct converter suitable for all digital radio systems up
TEMIC Semiconductors’ advanced UHF process. It to 1000 MHz, e.g., GSM, ADC, JDC.
features a frequency range from 100 MHz up to
1000 MHz, low current consumption, and single-ended Electrostatic sensitive device.
RF and LO ports. Adjustment-free application makes the Observe precautions for handling.
Features
Benefits
Supply voltage 5 V (typical)
No external components required for phase shifting
Very low power consumption: 150 mW (typical) for
–1dBm output level
Adjustment free, hence saves time
Only three external components necesary, this results
in cost and board space saving
Very good sideband suppression by means of duty
cycle regeneration of the LO input signal
Phase control loop for precise 90° phase shifting
Power-down mode
Low LO input level: –10dBm (typical)
50- single-ended LO and RF port
LO frequency from 100 MHz to 1 GHz
SO16 package
Block Diagram
PD
S
PD
1
6
8
BB
BB
Ai
Power
down
V
S
7
5,4
Ai
°
0
12
Duty cycle
regenerator
Frequency
doubler
°
RF
O
90 / control
LO
i
∑
°
90
loop
3
15
16
9
Ph
adj
BB
Bi
10
BB
Bi
2,11,13,14
GND
93 7757 e
Figure 1. Block diagram
Ordering Information
Extended Type Number
Package
SO16
Remarks
U2790B-BFP
Tube
Taped and reeled
U2790B-BFPG3
SO16
Rev. A3, 20-May-99
1 (12)
U2790B
Pin Description
SO16
PD
1
2
3
4
5
6
7
8
16
15
14
13
12
11
Ph
Ph
adj
Pin
1
Symbol
PD
Function
Power-down port
GND
adj
2, 11,
13, 14
GND
Ground
3
4, 5
6
RF
RF output
RF
GND
GND
o
O
V
S
Supply voltage
V
S
S
PD
Settling time power down
Baseband input A
Baseband input A inverse
Baseband input B
Baseband input B inverse
LO input
7
BB
BB
BB
BB
Ai
Ai
Bi
Bi
LO
V
S
i
8
9
S
PD
GND
10
12
15/16
LO
i
BB
10 BB
Ai
Bi
Ph
Phase adjustment (not neces-
sary for regular applications)
adj
9
BB
BB
Ai
Bi
94 8023 e
Absolute Maximum Ratings
Parameters
Symbol
Value
6
Unit
V
Supply voltage
Input voltage
Pins 4 and 5
V
S
Pins 7, 8, 9, 10 and 12
V
0 to V
125
V
i
S
Junction temperature
T
°C
°C
j
Storage-temperature range
T
stg
–40 to +125
Operating Range
Parameters
Symbol
Value
Unit
V
Supply-voltage range Pins 4 and 5
Ambient temperature range
V
S
4.5 to 5.5
–40 to +85
T
amb
°C
Thermal Resistance
Parameters
Symbol
Value
110
Unit
K/W
Junction ambient
SO16
R
thJA
2 (12)
Rev. A3, 20-May-99
U2790B
Electrical Characteristics
Test conditions (unless otherwise specified): V = 5 V, T
= 25°C, referred to test circuit,
S
amb
system impedance Z = 50 , f = 900 MHz, P = –10 dBm, V
= 1 V diff
O
LO
LO
BBi
pp
Parameters
Test Conditions / Pin
Symbol
Min.
4.5
Typ.
30
Max.
5.5
Unit
V
Supply-voltage range
Supply current
Pins 4 and 5
Pins 4 and 5
Pins 7-8, 9-10
V
S
I
mA
S
Baseband inputs
Input-voltage range
(differential)
Input impedance
(single ended)
Input-frequency range
Internal bias voltage
V
1000
3.2
1500
mV
k
BBi
BBi
BBi
pp
Z
5
f
0
250
2.65
<1
MHz
V
V
BBb
2.35
2.5
0.1
Temperature coefficient
LO input
TC
mV/°C
BB
Pin 12
Frequency range
f
50
1000
–5
MHz
dBm
LOi
1
Input level
P
Z
–12
–10
50
LOi
Input impedance
Voltage standing wave ratio
Duty-cycle range
RF output
iLO
VSWR
1.4
2
–
–
LO
DCR
0.4
–5
0.6
LO
Pin 3
Output level
P
–1
dBm
dB
RFo
2
LO suppression
f
f
= 900 MHz
= 150 MHz
LO
30
32
35
30
35
35
40
35
LO:
LO:
RFo
2,3
Sideband suppression
f
f
= 900 MHz
= 150 MHz
SBS
dB
LO:
LO:
RFo
e
4
Phase error
P
e
< 1
deg.
dB
Amplitude error
Noise floor
A
< 0.25
V
BBi
V
BBi
= 2 V, V
= 3 V
N
FL
– 132
– 144
dBm/Hz
BBi
= V
= 2.5 V
BBi
VSWR
VSWR
1.6
45
2
1
RF
3rd-order baseband
harmonic suppression
RF harmonic suppression
Power-down mode
Supply current
S
BBH
35
dB
dB
S
RFH
35
V
V
C
C
C
0.5 V
= 1 V
Pins 4, 5
I
A
s
PD
PD
10
10
PD
Settling time
= 100 pF
t
SPD
sPD
= 100 pF
LO
= 1 nF
Pin 6 to 3
RFo
Switching voltage
Power on
Pin 1
V
4
V
V
PDon
Power down
V
PDdown
1
Note: 1
Note: 2
Note: 3
The required LO level is a function of the LO frequency.
In reference to an RF output level –1 dBm and I/Q input level of 400 mVpp diff
Sideband suppression is tested without connection at Pins 15 and 16.
For higher requirements a potentiometer can be connected at these pins.
For Tamb = – 30 to + 85°C and VS = 4.5 to 5.5 V
Note: 4
Note: 5
By low-impedance signal source
Rev. A3, 20-May-99
3 (12)
U2790B
Typical Single Sideband Output Spectrum at VS = 4.5 V and VS = 5.5 V
fLO = 900 MHz, PLO = – 10 dBm, VBBi = 1 VPP (differential) Tamb = 25°C
94 7856 e
Figure 2.
Typical GMSK Output Spectrum
94 7855 e
Figure 3.
4 (12)
Rev. A3, 20-May-99
U2790B
Typical RF-Harmonic Output Spectrum
94 7854 e
Figure 4.
16
12
8
12
10
8
V
=0.2V
PP
BBi
V
V
=0.4V
BBi
BBi
PP
PP
V
=0.4V
PP
BBi
6
=1.0V
4
4
2
0
0
100
100
–40 –20
0
20
Temperature ( °C )
80
–40 –20
0
20
Temperature ( °C )
80
40
60
40
60
94 8884
94 8885
Figure 5. OIP3 vs. Tamb, LO = 150 MHz, level – 20 dBm
Figure 6. OIP3 vs. Tamb, LO = 900 MHz, level – 10 dBm
Rev. A3, 20-May-99
5 (12)
U2790B
0.5
40
30
20
10
0
0
F
=150MHz
LO
–0,5
–1
–1.5
–2
F
0
=900MHz
LO
–2.5
100
100
–40 –20
20
Temperature ( °C )
80
–40 –20
0
20
Temperature ( °C )
80
40
60
40
60
94 8887
94 8886
Figure 7. Output power vs. Tamb
Figure 8. Supply current vs. Tamb
Typical S11 Frequency Response of the RF Output
94 7850 e
Figure 9.
6 (12)
Rev. A3, 20-May-99
U2790B
Typical VSWR Frequency Response of the RF Output
94 7849 e
Figure 10.
Typical S11 Frequency Response of the LO Input
94 7852 e
Figure 11.
Rev. A3, 20-May-99
7 (12)
U2790B
10
2
1
0
8
6
4
2
0
1000
100
0
200 400 600 800 1000 1200
LO Frequency ( MHz )
1400
94 7851
LO Frequency (MHz)
94 7858
Figure 15. Typical required VBBi input signal (differential) vs.
LO frequency for PO = 0 dBm and PO = – 2 dBm
Figure 12. Typical VSWR frequency response of the LO input
60
50
40
0
–10
–20
30
20
10
–30
–40
–50
100
–40 –20
0
20
40
60
80
0
200 400 600 800 1000 1200
LO Frequency ( MHz )
1400
94 7845
Temperature ( °C )
94 7857
Figure 13. Typical supply current vs. temperature at VS = 5 V
0
Figure 16. Typical useful LO power range vs. LO frequency at
Tamb = 25 °C
–5
0
200 400 600 800 1000 1200
LO Frequency ( MHz )
1400
94 7859
Figure 14. Typical output power vs. LO-frequency at Tamb
=
25°C, VBBi = 230 mVPP (differential)
8 (12)
Rev. A3, 20-May-99
U2790B
Application Circuit
1n
Power
down
A
inv
S
PD
PD
220n
1
6
8
7
Power
down
220n
100p
BB
A
Ai
V
S
V
5,4
3
S
BB
Ai
100n
Baseband
1n
°
0
12
15
Duty cycle
regenerator
Frequency
doubler
°
90 / control
OUT
LO
∑
LO
10k
i
°
90
loop
RF
O
processing
V
S
Ph
adj
16
9
B
BB
Bi
220n
10
BB
Bi
2,11,13,14
GND
220n
94 8045 e
B
inv
Figure 17.
PCB Basic Layout
94 7847 e
Figure 18. U2790B-FP (SO 16)
Rev. A3, 20-May-99
9 (12)
U2790B
Application Notes
not critical such as in base stations. Coupling capacitors
for LO and RF also have a certain impact on the settling
Noise Floor and Settling Time
i
O
In order to reduce noise on the power-down control input
and improve the wide-off noise floor of the 900-MHz RF
time. The values used for the measurements are
= 100 pF and C = 1 nF.
C
LOi
RFo
output signal, capacitor C should be connected from
PD
Pin 6 to ground in the shortest possible way.
Baseband Coupling
The settling time has to be considered for the system un-
U2790B-FP (SO16) has an integrated biasing network
which allows AC coupling of the baseband signal at a low
count of external components. The bias voltage is
2.5 V 0.15 V.
der design. For GSM applications, a value of C = 1 nF
PD
defines a settling time, t , equal or less than 3 s. This
sPD
capacitance does not have any influence on the noise floor
within the relevant GSM mask. For mobile applications
the mask requirements can be achieved very easily with-
Figure 19 shows the baseband input circuitry with a resis-
tance of 3.2 k for each asymmetric input. The internal
out C
.
PD
A significant improvement of the wide-off noise floor is DC offset between A and A, and B and B is typically <
obtainable with C greater than 100 nF. Such values are 1 mV with a maximum of 3 mV. DC coupling is also
PD
recommended for applications where the settling time is possible with an external DC voltage of 2.5 0.15 V.
Circuitries
Mixer input stage
3.2 k
A
A
B
B
,
,
94 7869 e
Figure 19. Baseband input circuitry
V
S
LO
12
i
RF
3
O
50
20
20 pF
94 8509
94 8508
Figure 20. RF output circuitry
Figure 21. LO input circuitry
10 (12)
Rev. A3, 20-May-99
U2790B
Package Informaion
Package SO16
Dimensions in mm
5.2
4.8
10.0
9.85
3.7
1.4
0.2
0.25
0.10
0.4
3.8
1.27
6.15
5.85
8.89
16
9
technical drawings
according to DIN
specifications
13036
1
8
Rev. A3, 20-May-99
11 (12)
U2790B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with
such unintended or unauthorized use.
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
12 (12)
Rev. A3, 20-May-99
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