AM500002 [TE]

Low Noise Amplifier 1.575 GHz; 低噪声放大器1.575 GHz的


型号：	AM500002
厂家：	TE CONNECTIVITY
描述：	Low Noise Amplifier 1.575 GHz 低噪声放大器1.575 GHz的放大器
文件：	总3页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Low Noise Amplifier

1.575 GHz

AM50-0002

V 2.00

Features

SO-8

●

Low Noise Figure: 1.15 dB

●

High Gain: 27 dB

●

Low Power Consumption: 3 to 5 V, 20 mA

●

High Dynamic Range

●

Low Cost SOIC 8 Plastic Package

Description

M/A-COM's AM50-0002 is a high performance GaAs

MMIC low noise amplifier in a low cost SOIC 8-lead sur-

face mount plastic package. The AM50-0002 employs a

monolithic 3-stage self-bias design and a simple external

matching network to obtain minimum noise figure. It can

be biased using 3- or 5-volt supplies.

The AM50-0002 is ideally suited for use where low noise

figure, high gain, high dynamic range and low power

consumption are required. Typical applications include

receiver front ends in the Global Positioning System

(GPS) market, as well as standard gain blocks, buffer

amps, driver amps and IF amps in both fixed and

portable systems.

Ordering Information

Part Number

Package

AM50-0002

SOIC 8-Lead Plastic

AM50-0002TR

AM50-0002RTR

AM50-0002SMB

Forward Tape and Reel*

Reverse Tape and Reel*

Designer’s Kit

M/A-COM's AM50-0002 is fabricated using a mature 0.5-

micron gate length GaAs process. The process features

full passivation for increased performance reliability.

If specific reel size is required, consult factory for part number

assignment.

Electrical Specifications¹

T_A= +25°C, Z =50W, V =+5V, P = -35 dBm, f=1.575 GHz

Parameter

Units

Min.

Typ.

Max.

Gain

Noise Figure

Input VSWR

Output VSWR

1.15

2.0:1

1.5:1

1.4

Output1 dB Compression

dBm

Input IP

Reverse Isolation

-14

Bias Current

1. See following pages for 3-volt data.

V 2.00

Absolute Maximum Ratings¹

Functional Diagram

Parameter

Absolute Maximum

+10 VDC

+17 dBm

+150°C

GND

Input Power

Channel Temperature²

Operating Temperature

Storage Temperature

-40°C to 85°C

-65°C to 150°C

RF IN

GND

1. Operation of this device outside these limits may cause

permanent damage.

2. Typical thermal resistance ( jc) = +165°C/W

RF OUT, V_DD

GND

Recommended PCB Configuration

Dimensions in inches (mm)

Frequency = 1.575 GHz

0.244

(6.20)

Impedance

57.2 W

Electrical Length

36.0°

2X R 0.025 (0.64)

PLATED THRU

0.072

(1.83)

82.7 W

16.2°

0.060

(1.52)

3. Pins 1, 3, 4, 5, 7 and 8 must be RF and DC grounded as shown.

0.112

(2.84)

4. Pin 2 is the RF input and must be connected to the simple matching

network shown.

0.245

(6.22)

RF IN

0.030

(0.76)

5. Pin 6 is the RF output. V_DDis also applied on pin 6.

0.024

(0.61)

RF OUT

0.109

(2.77)

0.060

(1.52)

0.172

(4.37)

12 X R 0.008 (0.20)

PLATED THRU

FR-4 circuit board, thickness = 0.016 inches (0.41)

Typical Performance

GAIN vs FREQUENCY, T = +25°C

NOISE FIGURE vs FREQUENCY, T = +25°C

1.4

5 V

1.3

3 V

1.2

3 V

1.1

5 V

1.0

1.3

1.4

1.5

1.6

1.7

1.8

1.50

1.52

1.54

1.56

1.58

1.60

FREQUENCY (GHz)

V 2.00

VSWR vs FREQUENCY @ 5 V, T = +25°C

INPUT IP vs FREQUENCY, T = +25°C

3.0

2.5

2.0

1.5

1.0

-12

-13

-14

-15

-16

Input

Output

3 V

1.3

1.4

1.5

1.6

1.7

1.8

1.50

1.52

1.54

1.56

1.58

1.60

FREQUENCY (GHz)

GAIN vs FREQUENCY @ 5 V

NOISE FIGURE vs FREQUENCY @ 5 V

1.6

1.4

1.2

1.0

0.8

-40°C

+25°C

+85°C

-40°C

1.3

1.4

1.5

1.6

1.7

1.8

1.50

1.52

1.54

1.56

1.58

1.60

FREQUENCY (GHz)

Additional information is available in Application Note M540,

“M/A-COM GaAs MMIC LNA SOIC-8 Platform.”

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