MA02107AF-R13 [TE]
3.4 V, 1.2 W RF Power Amplifier IC; 3.4 V， 1.2 W RF功率放大器IC
| 型号： | MA02107AF-R13 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 3.4 V, 1.2 W RF Power Amplifier IC |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
3.4 V, 1.2 W RF Power Amplifier IC
V 1.0
Features
Functional Schematic
§
§
§
§
§
§
§
Ideal for Pager Applications
+30.8 dBm Output Power
30.8 dB Power Gain
DD2
V
V
DD1
GND
GND
GND
N/C
GND
GND
RF IN
GND
GND
N/C
Single Positive Supply
Class AB Bias
50 Ohm Input Impedance
Single Capacitor Output Match
RF OUT/VDD3
GND
GND
N/C
Description
The MA02107AF is a three stage power amplifier,
designed for paging applications to have an output
power of +30.8 dBm with an input power of 0 dBm.
This power amplifier operates at +3.4 volts with
Pin Configuration
Pin
Function
Description
55% typical power added efficiency.
The
MA02107AF is mounted in a standard outline 16-pin
TSSOP plastic package.
1
VDD1
First Stage Supply Voltage
Not Connected
Ground
2
N/C
The MA02107AF is fabricated using M/A-COM’s
self-aligned MSAG®-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.
3
GND
GND
RFIN
4
Ground
5
RF Input
6
GND
GND
N/C
Ground
7
Ground
8
Not Connected
Not Connected
Ground
Ordering Information
9
N/C
Part Number
Description
10
11
12
13
14
15
16
GND
GND
RFOUT/VDD3
GND
GND
GND
VDD2
MA02107AF-R7
MA02107AF-R13
MA02107AF-SMB
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample Test Board
Ground
RF Output/Third Stage Supply
Ground
Ground
Ground
Second Stage Supply Voltage
Specifications subject to change without notice.
nNorth America: Tel. (800) 366-2266
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
1
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Electrical Specifications: TS = 35 °C1, Z0 = 50 W2,3
Parameter
Test Conditions
Units
MHz
dBm
dB
Min
900
30.0
Typ
Max
Frequency
942
Output Power
30.8
30.8
55
Power Gain
Power Added Efficiency
Input Return Loss
2nd Harmonics
%
45
10
dB
15
dBc
dBc
oC/W
-35
-50
41
-29
-45
3rd Harmonics
Thermal Resistance
3rd Stage FET to solder point of pin 13
+3.0 V < VCC < +5.0 V, POUT < +31 dBm,
VSWR < 5:1, -40ºC < TC < +85ºC, RBW
= 3 MHz max hold
Stability
All spurs < -60 dBc
1. Ts is the temperature measured at the soldering point of pin 13.
2. Unless otherwise specified, input power is 0 dBm, VDD is +3.45 V, and test frequency is 900 MHz.
3. The output is externally matched to 50 ohms.
Absolute Maximum Ratings1
Parameter
Absolute Maximum
Max Input Power
+6 dBm
+5.0 volts
Operating Voltages
Operating Temperature, Ts
Channel Temperature
Storage Temperature
-40 °C to +70 °C
+150 °C
-40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
Application Information
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board
50 Ohm Lead Transition
Specifications subject to change without notice.
nNorth America: Tel. (800) 366-2266
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
2
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Output Match Impedance (as seen from pin 12)
0
900 MHz
925 MHz
W
8.4 - j9.2
850 MHz
- 9 0
Typical Performance Curves
Output Power and PAE vs. Input Power
Output Power, PAE, and VSWR vs. Fequency
40
60
50
40
30
20
60
50
40
30
20
10
0
3:1
2:1
1:1
h
h
35
30
POUT
25
20
POUT
¦ = 901 MHz
VDD = 3.4 V
15
10
10
0
VSWR
800
850
900
¦ , Frequency (MHz)
950
1000
-10
-5
IN
0
5
P , Input Power (dBm)
Output Power and PAE vs. Supply Voltage
Harmonics
35
70
40
¦
o = 901 MHz
30
20
P
IN = 0 dBm
30
60
50
40
30
20
10
0
h
VDD = 3.4 V
25
POUT
10
20
0
15
10
-10
-20
-30
-40
¦
= 901 MHz
5
0
PIN = 0 dBm
¦ o
2¦ o
3¦ o
Frequency
4¦ o
5¦ o
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDD, Supply Voltage (Volts)
Specifications subject to change without notice.
nNorth America: Tel. (800) 366-2266
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
3
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Application Schematic
DD
+V (+3.4V)
C1
C2
1
16
15
14
13
L1
2
N/C
3
4
RF OUTPUT
RF INPUT
5
12
11
10
9
T1
C5
C3
6
7
C4
8
N/C
N/C
List of components:
C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board)
TSSOP-16 Package
Dimensions in
millimeters
Dimensions in inches
MIN NOM MAX
SYMBOL MIN
NOM MAX
A
A1
A2
b
1.05
0.05
—
1.10
0.10
1.00
0.25
0.127
1.20 0.041 0.043 0.047
0.15 0.002 0.004 0.006
1.05
0.28 0.008 0.010 0.011
0.005
—
0.039 0.041
0.20
—
C
D
E
—
—
—
4.90 5.075 5.10 0.193 0.200 0.201
6.20
4.30
—
6.40
4.40
0.65
0.60
1.00
—
6.60 0.244 0.252 0.260
4.50 0.169 0.173 0.177
E1
e
—
—
0.025
—
L
0.50
0.90
—
0.70 0.020 0.024 0.028
1.10 0.035 0.039 0.043
L1
y
0.10
8°
—
0°
—
4°
0.004
8°
0°
4°
q
NOTES:
1.
2.
3.
4.
5.
6.
Controlling dimension: mm
Lead frame material: EFTEC 64
Dimension “D” does not include mold flash, protrusions or gate burrs
Dimension “E” does not include interlead flash or protrusions
Tolerance: ±0.254 mm (±0.010² ) unless otherwise specified
End flash max: 0.12 mm (0.005 ² )
Specifications subject to change without notice.
nNorth America: Tel. (800) 366-2266
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
4
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