MA02203AD-R13 [TE]

3.6 V, 450 mW DECT RF Power Amplifier IC; 3.6 V , 450毫瓦的DECT RF功率放大器IC
MA02203AD-R13
型号: MA02203AD-R13
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

3.6 V, 450 mW DECT RF Power Amplifier IC
3.6 V , 450毫瓦的DECT RF功率放大器IC

放大器 功率放大器
文件: 总5页 (文件大小:92K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
3.6 V, 450 mW DECT RF Power  
Amplifier IC  
V 1.0  
Features  
Functional Schematic  
§
§
§
§
§
§
Ideal for DECT Applications  
+26.5 dBm Output Power  
24.5 dB Power Gain  
N/C  
N/C  
+VDD1  
+VDD2  
Single Positive Supply  
Class A Bias  
GND  
GND  
RFIN  
GND  
GND  
GND  
RFOUT  
GND  
No External RF Matching Required  
GND  
GND  
N/C  
Description  
N/C  
16 pin narrow body SOIC  
The MA02203AD is a two stage power amplifier  
designed for DECT applications to have an output  
power of +26.5 dBm with an input power of 2 dBm.  
This power amplifier operates at +3.6 volts with  
Pin Configuration  
35% typical power added efficiency.  
The  
MA02203AD is mounted in a narrow body 16-pin  
SOIC plastic package.  
Pin  
Function  
Description  
1
N/C  
Not Connected  
The MA02203AD is fabricated using M/A-COM’s  
self-aligned MSAG®-Lite MESFET process for a low  
single supply voltage, high power efficiency, and  
excellent reliability.  
2
VDD1  
First Stage Supply Voltage  
Ground  
3
GND  
GND  
RFIN  
GND  
GND  
N/C  
4
Ground  
5
RF Input  
This part is not recommended for new designs. M/A-  
COM’s MA02206GJ has superior RF performance  
with less DC power consumption in a smaller  
package. Pricing on the MA02206GJ is also less  
than the MA02203AD.  
6
Ground  
7
Ground  
8
Not Connected  
Not Connected  
Ground  
9
N/C  
10  
11  
12  
13  
14  
15  
16  
GND  
GND  
RFOUT  
GND  
GND  
VDD2  
Ground  
RF Output  
Ordering Information  
Ground  
Part Number  
Description  
Ground  
MA02203AD-R7  
MA02203AD-R13  
7 inch, 1000 piece reel  
13 inch, 3000 piece reel  
Second Stage Supply Voltage  
Not Connected  
N/C  
Specifications subject to change without notice.  
nNorth America: Tel. (800) 366-2266  
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
1
Visit www.macom.com for additional data sheets and product information.  
3.6 V, 450 mW DECT RF Power Amplifier IC  
MA02203AD  
V 1.0  
Electrical Specifications: TS = 40 °C1, Z0 = 50 W2,3  
Parameter  
Test Conditions  
Units  
Min  
Typ  
Max  
Frequency  
MHz  
dBm  
dB  
dB  
mA  
-
1880  
25.5  
1900  
27.5  
0.5  
Output Power  
26.5  
0.2  
Pout Frequency Dependency  
Power Gain  
24.5  
350  
Current Consumption  
Input VSWR, PA On  
Input VSWR, PA Off  
Isolation, PA Off  
2nd Harmonics  
3rd Harmonics  
420  
2.0:1  
2.0:1  
1.6:1  
1.4:1  
VDD1, VDD2 = 0 V  
-
VDD1, VDD2 = 0 V  
dB  
dBc  
dBc  
40  
31  
55  
Junction of 2nd stage FET to pin 11, Duty  
Cycle=50%  
Thermal Resistance  
Load Mismatch  
oC/W  
-
63  
VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm  
No degradation  
PIN = -3 to +7 dBm, VDD = 0 - 4.6 V, 0 mW  
< POUT < 450 mW, TS = -40 to +75 °C, Load  
VSWR = 10:1  
Stability  
-
All spurs < -60 dBc  
1. Ts is the temperature measured at the soldering point of pin 11.  
2. Unless otherwise specified, input power is +2 dBm, VDD is +3.6 V, and test frequency is 1890 MHz.  
Absolute Maximum Ratings1  
Parameter  
Absolute Maximum  
Max Input Power  
+6 dBm  
+5.5 volts  
Operating Voltages  
Operating Temperature, Ts  
Channel Temperature  
Storage Temperature  
-40 °C to +75 °C  
+150 °C  
-40 °C to +150 °C  
1. Exceeding any one or combination of these limits may cause permanent damage.  
Specifications subject to change without notice.  
nNorth America: Tel. (800) 366-2266  
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
2
Visit www.macom.com for additional data sheets and product information.  
3.6 V, 450 mW DECT RF Power Amplifier IC  
MA02203AD  
V 1.0  
Application Information  
Static Sensitivity  
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when  
handling these devices.  
Board Layout  
Sample Test Board  
50 Ohm Lead Transition  
Typical Performance Curves  
Output Power and Current vs. Input Power  
Output Power, PAE, and VSWR vs. Frequency  
45  
4:1  
3:1  
2:1  
1:1  
30  
0.6  
0.4  
0.2  
0.0  
h
40  
25  
20  
15  
10  
5
POUT  
35  
POUT  
30  
25  
IDD  
PIN = +2 dBm  
20  
VDD = 3.6 V  
15  
f = 1.89 GHz  
VDD = 3.6 V  
10  
5
VSWR  
0
0
1.7  
1.8  
1.9  
2
-10  
-5  
0
5
¦
, Frequency (GHz)  
PIN, Input Power (dBm)  
Specifications subject to change without notice.  
nNorth America: Tel. (800) 366-2266  
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
3
Visit www.macom.com for additional data sheets and product information.  
3.6 V, 450 mW DECT RF Power Amplifier IC  
MA02203AD  
V 1.0  
Output Power and Current vs. Supply Voltage  
Harmonics  
30  
25  
20  
15  
10  
5
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
30  
¦
o = 1.89 GHz  
20  
10  
POUT  
PIN = +2 dBm  
VDD = 3.6 V  
0
IDD  
-10  
-20  
-30  
-40  
¦
=1.89 GHz  
PIN = +2 dBm  
0
2.8  
3.0 3.2 3.4  
3.6 3.8  
4.0 4.2 4.4 4.6  
¦ o  
2¦ o  
3¦ o  
4¦ o  
5¦ o  
VDD, Supply Voltage (V)  
Frequency  
Output Power and Current vs. Frequency, Ts = -40oC  
Output Power and Current vs. Frequency, Ts = +75oC  
30  
25  
20  
15  
10  
5
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
30  
25  
20  
15  
10  
5
0.6  
POUT  
0.5  
0.4  
0.3  
0.2  
0.1  
0
POUT  
IDD  
IDD  
PIN = +2 dBm  
VDD = 3.6 V  
PIN = +2 dBm  
VDD = 3.6 V  
Ts = -40 °C  
Ts = +75 °C  
0
0
1.7  
1.8  
¦
1.9  
, Frequency (GHz)  
2
1.7  
1.8  
1.9  
2
¦
, Frequency (GHz)  
Output Power and Current vs. Temperature  
Power Dissipation vs. Temperature  
30  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
3.0  
25  
20  
15  
10  
5
POUT  
2.5  
2.0  
IDD  
Slope = -1 / RTH J-S  
1.5  
1.0  
0.5  
0.0  
PIN = +2 dBm  
VDD = 3.6 V  
0
-50  
-25  
0
25  
50  
75  
0
25  
50  
75  
100  
125  
150  
175  
TS, Operating Temperature (°C)  
TS, Temperature at Solder Point of Pin 11 (°C)  
Specifications subject to change without notice.  
nNorth America: Tel. (800) 366-2266  
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
4
Visit www.macom.com for additional data sheets and product information.  
3.6 V, 450 mW DECT RF Power Amplifier IC  
MA02203AD  
V 1.0  
Application Schematic  
+VDD  
C1  
C2  
L1  
L2  
1
16  
15  
N/C  
N/C  
2
3
14  
13  
4
RF OUTPUT  
RF INPUT  
5
12  
11  
10  
6
7
8
9
N/C  
N/C  
60mil GETEK Board  
List of components:  
C1 = C2 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL)  
L1 = 8.2 nH Coilcraft chip inductor (1008CT.080XKBB)  
L2 = 27 nH Coilcraft chip inductor (1008CS.270XKBB)  
SOIC-16 Narrow Body Package  
Dimensions in  
millimeters  
Dimensions in inches  
Symbol  
Min  
1.35  
0.10  
Nom  
1.60  
Max  
1.75  
0.25  
Min  
Nom  
Max  
A
A1  
A2  
B
C
D
E
e
H
L
0.053  
0.004  
0.063  
0.068  
0.010  
1.45  
0.41  
0.20  
9.91  
3.91  
1.27  
5.99  
0.71  
0.057  
0.016  
0.008  
0.390  
0.154  
0.050  
0.236  
0.028  
0.33  
0.19  
9.80  
3.80  
0.51  
0.25  
10.01  
4.00  
0.013  
0.0075  
0.386  
0.150  
0.020  
0.0098  
0.394  
0.157  
5.79  
0.38  
6.20  
1.27  
0.10  
8°  
0.228  
0.015  
0.244  
0.050  
0.004  
8°  
y
0°  
0°  
q
NOTES:  
1.  
2.  
3.  
4.  
Controlling dimension: inch  
Lead frame material: copper alloy C151  
Lead thickness after solder plating will be 0.013" maximum  
Dimension “D” does not include mold flash, protrusions or gate  
burrs  
5.  
6.  
Dimension “E” does not include interlead flash or protrusions  
Tolerance: ±0.010" unless otherwise specified  
Specifications subject to change without notice.  
nNorth America: Tel. (800) 366-2266  
nAsia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
nEurope: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
5

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