MA4BN1840-1 [TE]
Monolithic HMIC Integrated Bias Network 18 - 40 GHz; 单片HMIC偏置网络18 - 40 GHz的
| 型号： | MA4BN1840-1 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Monolithic HMIC Integrated Bias Network 18 - 40 GHz |
| 文件： | 总9页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Monolithic HMIC Integrated Bias
Network 18 - 40 GHz
V 1.00
Features
MA4BN1840-1 Chip Layout
n
n
n
n
n
Broad Bandwidth Specified from 18 to 40 GHz
Useable from 10 GHz to 50 GHz
Extremely Low Insertion Loss
High RF-DC Isolation
Rugged, Fully Monolithic, Glass Encapsulated
Construction
Description
The MA4BN1840-1 device is a fully monolithic broadband bias
TM
network utilizing M/A-COM's HMIC
(Heterolithic Microwave
Integrated Circuit) Process, US Patent 5,268,310. This process
allows the incorporation of silicon pedestals that form vias by
imbedding them in low loss, low dispersion glass in addition to
High Q spiral Inductors and MIM capacitors. By using small
spacing between elements, this combination of silicon and glass
gives HMIC devices low loss and high performance with
exceptional repeatability through millimeter frequencies.
Large bond pads facilitate the use of low inductance ribbon bonds,
while gold backside metalization allows for manual or automatic
die attach via 80Au/20Sn or Sn62/Pb36/Ag2 solders or electrically
conductive silver epoxy.
Applications
Absolute Maximum Ratings1
The MA4BN1840-1 millimeter frequency bias network is suitable
for D.C. biasing PIN Diode control circuits as a RF-DC
de-coupling network and as a D.C. Return network. The device can
also be used as a bi-directional re-active coupler for schottky
detector circuits. D.C. currents up to 150 mA and D.C. voltages up
to 50 V may be used.
@ TA = +25 °C
(Unless otherwise specified)
Parameter
Value
Operating Temperature
Storage Temperature
Die Attach Temperature
RF C.W. Incident Power
D.C. Bias Current
-65 °C to +125 °C
-65 °C to +150 °C
320 °C for 20 sec
10 Watts
+/- 150 mA
D.C. Bias Voltage
+/- 50 V
1. Exceeding any of these values may result in permanent
damage
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1
V 1.00
Electrical Specifications @ TA = 25 °C
(On-Wafer Measurements)
Frequency
Parameter
Minimum
Value
Average
Value
0.15
Maximum
Value
0.2
Units
Insertion Loss
-
dB
18-40 GHz
30
35
-
dB
RF - DC Isolation
18-40 GHz
30
15
17
17
-
-
dB
dB
Input Return Loss
Output Return Loss
18-40 GHz
18-40 GHz
RF Performance (On Wafer Measurements of Several Devices)
0.0
-0.1
-0.2
-0.3
-0.4
J1-J2 INSERTION LOSS
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
10
15
20
25
30
35
40
45
50
freq, GHz
0
-5
J1-J2 INPUT RETURN LOSS
-10
-15
-20
-25
-30
-35
-40
-45
-50
10
15
20
25
30
35
40
45
50
freq, GHz
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1
V 1.00
RF Performance (On Wafer Measurements of Several Devices)
0
-5
-10
J2-J1 OUTPUT RETURN LOSS
-15
-20
-25
-30
-35
-40
-45
-50
10
15
20
25
30
35
40
45
50
freq, GHz
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
RF-DC ISOLATION
-65
-70
10
15
20
25
30
35
40
45
50
freq, GHz
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1 Outline
MA4BN1840-1
V 1.00
MA4BN1840-1 Outline Dimensions
mils
mm
Dim
A
Min.
57.5
Max.
58.7
Min.
1.46
Max.
1.49
B
41.7
31.6
15.7
31.7
20.5
42.3
32.4
16.5
32.5
21.7
1.06
0.80
0.40
0.81
0.52
1.08
0.82
0.42
0.83
0.55
C
D
E
F
RF Bond Pads 5.1 X 5.9 REF.
DC Bond Pads 5.1 X 5.9 REF.
.130 X .150 REF.
.130 X .150 REF.
0.125 REF.
Thickness
0.005 REF.
4
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1
V 1.00
Mounting
Assembly Considerations
These chips have Ti-Pt-Au topside and backside metal. They
can be die mounted with a gold-tin or a lead-tin-silver eutectic
solder preform or electrically conductive silver epoxy.
Mounting surface must be clean of organic contaminants and
flat for best adhesion results.
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Eutectic Die Attachment
An 80/20 gold-tin eutectic solder preform is recommended
with a work surface temperature of 255 oC and a tool tip
o
Electro-Static Sensitivity
The MA4BN1840-1 Bias Network is ESD, Class 1 sensitive.
The proper ESD handling procedures should be used.
temperature of 265 C. When hot gas is applied, the tool tip
temperature should be 290 oC. The chip should not be
o
exposed to temperatures greater than 320 C for more than 20
seconds. No more than three seconds should be required for
attachment.
Wire Bonding
Thermosonic wedge wire bonding using 0.003” x 0.00025”
ribbon or ball bonding with 0.001” diameter gold wire is
recommended. A stage temperature of 150 C and a force of
18 to 22 grams should be used. Ultrasonic energy should be
adjusted to the minimum required. RF bonds should be as
short as possible for best performance.
Electrically Conductive Expoxy
Die Attachment
o
o
Assembly should be preheated to 125-150 C. A minimum
amount of epoxy should be used, approximately 1 to 2 mils
thickness for best electrical and thermal conductivity. A thin
epoxy fillet should be visible around the perimeter of the chip
after placement. Cure epoxy per manufacturer’s
time-temperature schedule.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
Operation of the MA4BN1840-1
MA4BN1840-1
V 1.00
Broadband operation of the MA4BN1840-1 Bias Network is accomplished by applying D.C. bias to the “ DC “ port on the die to the
corresponding microwave device connected at the J1 and/or the J2 ports. An external blocking capacitor is required if the current is to
be directed to only one RF output port as in a bias “T” configuration.
This device can also be used as a ground return when the DC Bias Port is attached to the RF and D.C. ground. The small D.C.
resistance ( < 1 W ) of the D.C. Bias Port allows up to +/- 150 mA @ +/- 50 V to be delivered while still maintaining > 35 dB RF to
D.C. isolation.
MA4BN1840-1 Schematic
J2 ( OUT )
J1 ( IN )
D.C. Ground
D.C. Bias
6
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
Biasing Applications Using the MA4BN1840-1
MA4BN1840-1
V 1.00
Shunt Diode Switch Biasing
D.C. Bias
J1
J2 ( OPEN )
IN
q
< 5 °
line
OUT
External
D.C Block
External
D.C Block
PIN Diodes
7
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
MA4BN1840-1
V 1.00
Series Diode Switch Biasing
D.C. Bias
J1
J2 ( OPEN )
q
< 5 °
line
IN
OUT
External
D.C Block
External
D.C Block
PIN Diodes
J1 ( GND )
J2 ( GND )
D.C. Return
8
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
Monolithic HMIC Integrated Bias Network 18 - 40 GHz
Series - Shunt Diode Switch Biasing
D.C. Bias
MA4BN1840-1
V 1.00
J1
J2 ( OPEN )
q
< 5 °
line
IN
OUT
External
D.C Block
External
D.C Block
PIN Diodes
J1 ( GND )
J2 ( GND )
D.C. Return
9
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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