MA4E1317_V7 [TE]

GaAs Flip Chip Schottky Barrier Diodes; 砷化镓倒装芯片肖特基势垒二极管


型号：	MA4E1317_V7
厂家：	TE CONNECTIVITY
描述：	GaAs Flip Chip Schottky Barrier Diodes 砷化镓倒装芯片肖特基势垒二极管二极管
文件：	总7页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Features

•

Low Series Resistance

Low Capacitance

High Cutoff Frequency

Silicon Nitride Passivation

Polyimide Scratch Protection

Designed for Easy Circuit Insertion

MA4E1317

Description and Applications

M/A-COM's MA4E1317 single, MA4E1318 anti-

parallel pair, MA4E1319-1 reverse tee,

MA4E1319-2 series tee and MA4E2160 uncon-

nected anti-parallel pair are gallium arsenide flip

chip Schottky barrier diodes. These devices are

fabricated on OMCVD epitaxial wafers using a

process designed for high device uniformity and

extremely low parasitics. The diodes are fully

passivated with silicon nitride and have an addi-

tional layer of polyimide for scratch protection.

The protective coatings prevent damage to the

junction during automated or manual handling.

The flip chip configuration is suitable for pick

and place insertion. The high cutoff frequency

of these diodes allows use through millimeter

wave frequencies. Typical applications include

single and double balanced mixers in PCN

transceivers and radios, police radar detectors,

and automotive radar detectors. The devices

can be used through 80 GHz.

MA4E1318

MA4E1319-1

The MA4E1318 anti-parallel pair is designed for

use in sub harmonically pumped mixers. Close

matching of the diode characteristics results in

high LO suppression at the RF input.

MA4E1319-2

MA4E2160

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Electrical Specifications @ + 25 °C

Parameters and Test Conditions

MA4E1317

Typ.

MA4E1318

Symbol

Units

Min.

.030

Max.

.060

Min.

Typ.

.020³

.045³

.005

Max.

Junction Capacitance at 0V at 1 MHz

Total Capacitance at 0V at 1 MHz¹

Junction Capacitance Difference

Series Resistance at +10mA²

Forward Voltage at +1mA

.020

.045

.030³

.060³

.010

DCj

Ohms

Volts

Vf1

DVf

Vbr

.60

4.5

.70

.80

.60

.70

.80

Forward Voltage Difference at 1mA

Reverse Breakdown Voltage at -10uA

SSB Noise Figure

.005

.010

6.5⁴

Parameters and Test Conditions

MA4E1319-1 or -2

MA4E2160

Typ.

.020³

.045³

.005

Symbol

Units

Min.

Typ.

.020³

.045³

.005

Max.

Min.

Max.

Junction Capacitance at 0V at 1 MHz

Total Capacitance at 0V at 1 MHz¹

Junction Capacitance Difference

Series Resistance at +10mA²

Forward Voltage at +1mA

.030³

.060³

.010

.030³

.060³

.010

DCj

Ohms

Volts

Vf1

DVf

Vbr

.60

4.5

.70

.80

.60

4.5

.70

.80

Forward Voltage Difference at 1mA

Reverse Breakdown Voltage at -10uA

SSB Noise Figure

.005

.010

.005

.010

6.5⁴

Notes:

1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.

2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.

3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.

4. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBM for a single Schottky junc-

tion. The IF noise figure contribution (1.5 dB) is included.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Forward Current vs Temperature

100.00

10.00

1.00

25°C

+125°C

- 50°C

0.10

0.01

0.00

0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00

Forward Voltage (V)

Absolute Maximum Ratings ¹

Parameter

Absolute Maximum

Operating Temperature

-65 °C to +125 °C

Storage Temperature

Incident LO Power

-65 °C to +150 °C

+20 dBm

Incident RF Power

+20 dBm .

+235°C for 10 seconds

Class 0

Mounting Temperature

Electrostatic Discharge ( ESD ) Classification

1. Operation of this device above any one of these parameters may cause permanent damage.

2. Human Body Model

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Mounting Techniques

These chips were designed to be inserted onto hard or soft substrates with the junction side down. They can be

mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with

the junction side up, and wire or ribbon bonds made to the pads.

Solder Die Attach:

Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not rec-

ommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than

200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment.

Epoxy Die Attach:

Assembly can be preheated to 125 - 150°C. Use a minimum amount of epoxy. Cure epoxy as per manufac-

turer’s schedule. For extended cure times, temperatures should be kept below 200°C.

Handling Procedures

The following precautions should be observed to avoid damaging these chips:

Cleanliness:

The chips should be handled in a clean environment.

Do not attempt to clean die after installation.

Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static

electricity. Proper ESD techniques should be used when handling these devices.

General Handling: The protective polymer coating on the active areas of these die provides scratch

protection, particularly for the metal air bridge which contacts the anode. Die can

be handled with tweezers or vacuum pickups and are suitable for use with

automatic pick-and-place equipment.

GaAs Flip Chip Ordering Information

Part Number

MA4E1317

Package

Die in Carrier

Standard Quantity per Carrier

100

3000

100

MADS-001317-1278HP

MA4E1318

Pocket Tape on Reel

Wafer on Frame

Pocket Tape on Reel

Die in Carrier

MADS-001318-1197HP

MA4E1319-1

3000

100

MA4E1319-2

Die in Carrier

100

MA4E2160

Die in Carrier

100

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Flip Chip Outline Drawings

MA4E1317

Case Style 1278

MILLIMETERS

INCHES

MIN.

DIM.

MIN.

MAX.

0.013

0.014

0.027

0.009

0.008

0.017

0.006

0.007

0.0085

0.330

0.660

0.203

0.177

0.406

0.101

0.152

0.190

0.335

0.685

0.228

0.203

0.430

0.152

0.177

0.216

0.026

0.008

0.007

0.016

0.004

0.006

0.0075

TYP

MA4E1318

E TYP

Case Style 1197

TYP

MILLIMETERS

INCHES

MIN.

DIM.

MIN.

MAX.

.025

.027

.015

.008

.020

.0085

.005

.006

.64

.32

.15

.45

.190

.08

.10

.69

.37

.20

.50

.216

.13

.15

.012

.006

.018

.0075

.003

.004

ALIGNMENT INDICATOR (2 PLCS)

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Flip Chip Outline Drawings

TYP

SQ.

TYP

MA4E1319-1

Case Style 1199

TYP

MILLIMETERS

INCHES

MIN.

DIM.

MIN.

MAX.

.027

.029

.020

.0085

.015

.005

.006

.68

.45

.190

.33

.08

.10

.73

.50

.216

.38

.13

.15

.018

.0075

.013

.003

.004

ALIGNMENT INDICATOR (3 PLCS)

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317, MA4E1318, MA4E1319-1,

MA4E1319-2, MA4E2160

GaAs Flip Chip Schottky Barrier Diodes

M/A-COM Products

Rev. V7

Flip Chip Outline Drawings

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E1317_V7 [TE]

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