MA4E2037_V3 [TE]
GaAs Beam Lead Schottky Diodes; 砷化镓梁式引线肖特基二极管
| 型号： | MA4E2037_V3 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Beam Lead Schottky Diodes |
| 文件： | 总4页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Rev. V3
Features
MA4E2037, MA4E2038
•
•
•
•
•
Low Series Resistance
Low Capacitance
High Cut-Off Frequency
Silicon Nitride Passivation
Multiple Configurations
Description and Applications
M/A-Com’s MA4E2037 and MA4E2038 single diodes,
MA4E2039 anti-parallel pair and MA4E2040 series tee
are gallium arsenide beam lead Schottky barrier diodes.
These devices are fabricated on OMCVD epitaxial wa-
fers using a process designed for high device uniformity
and extremely low parasitics. The high carrier mobility of
gallium arsenide results in lower series resistance than a
silicon Schottky with equivalent capacitance, resulting in
lower noise figure and conversion loss. The diodes are
fully passivated with silicon nitride and have an addi-
tional layer of a polymer for scratch protection. The pro-
tective coatings prevent damage to the junction and the
anode air bridge during handling.
MA4E2039
Applications
The high cut-off frequency of these diodes allows use
through millimeter wave frequencies. Typical applica-
tions include single and double balanced mixers in PCN
transceivers and radios, automotive radar systems and
police radar detectors.
MA4E2040
The MA4E2039 anti-parallel pair is designed for use in
sub harmonically pumped mixers. Close matching of the
diode characteristics in high LO suppression at the RF
input.
Notes : ( Unless otherwise specified )
1. Dimensions are in mm (inches).
2. Views are with junction side up.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Rev. V3
Electrical Specifications @ + 25 °C (Measured as Single Diodes)
Parameters and Test Conditions
MA4E2037
Typ.
MA4E2038
Typ.
Symbol
Units
Min.
.030
Max.
.060
Min.
-
Max.
.045
Junction Capacitance at 0V at 1 MHz
Cj
pF
.020
.015
Total Capacitance at 0V at 1 MHz1
Junction Capacitance Difference
Series Resistance at +10mA2
Ct
pF
pF
.045
.035
DCj
Rs
Ohms
Volts
Volts
Volts
4
7
6.5
.70
10
Forward Voltage at +1mA
Vf1
DVf
Vbr
.60
4.5
.70
.80
.60
4.5
.80
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
7
7
Parameters and Test Conditions
MA4E2039
Typ.
MA4E2040
Typ.
Symbol
Cj
Units
pF
Min.
Max.
Min.
Max.
Junction Capacitance at 0V at 1 MHz
.0203
.0203
Total Capacitance at 0V at 1 MHz1
Junction Capacitance Difference
Series Resistance at +10mA2
Ct
pF
pF
.0303
.0453
.005
4
.0603
.010
7
.0303
.0453
.005
4
.0603
.010
7
DCj
Rs
Ohms
Volts
Volts
Volts
Forward Voltage at +1mA
Vf1
DVf
Vbr
.60
.70
.80
.60
.70
.80
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
.005
.010
.005
.010
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E2039 and MA4E2040 is per Schottky diode.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Rev. V3
Forward Current vs Temperature
25°C
- 50°C
+125°C
100.00
10.00
1.00
0.10
0.01
0.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
Incident LO Power
-65 °C to +150 °C
+20 dBm
Incident RF Power
+20 dBm .
+235°C for 10 seconds
Class 0
Mounting Temperature
2
Electrostatic Discharge ( ESD ) Classification
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
MA4E2037, MA4E2038, MA4E2039, MA4E2040
GaAs Beam Lead Schottky Diodes
Rev. V3
Handling Procedures
The following precautions should be observed to avoid damaging these chips:
Cleanliness:
The chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these
devices.
General Handling: The protective polymer coating on the active areas of these die provides
scratch protection, particularly for the metal air bridge which contacts the
anode. Beam lead devices must, however, must be handled with care since
the leads may be easily distorted or broken by the normal pressures
exerted when handled by tweezers. A vacuum pencil with a # 27 tip is
recommended for picking and placing.
Mounting Techniques
These devices are designed to be inserted onto hard or soft substrates. Recommended methods of attachment
include thermo-compression bonding, parallel- gap welding, solder reflow and conductive epoxy.
See application note M541, “ Bonding and Handling Procedures for Chip Diode Devices “ for detailed instruc-
tions.
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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