MA4E2099-1284W
更新时间：2024-10-29 06:27:59
品牌：TE
描述：High Barrier Silicon Schottky Diodes: Bridge Octoquad
概述
规格参数
数据手册MA4E2099-1284W 概述
High Barrier Silicon Schottky Diodes: Bridge Octoquad 高垒硅肖特基二极管：大桥Octoquad 微波混频二极管
MA4E2099-1284W 规格参数
| 生命周期： | Transferred | 零件包装代码： | DIE |
| 包装说明： | CASE ODS-1284, DIE-4 | 针数： | 4 |
| Reach Compliance Code： | unknown | 风险等级： | 5.37 |
| 二极管元件材料： | SILICON | 二极管类型： | MIXER DIODE |
| 最大工作频率： | 12 GHz | 最高工作温度： | 150 °C |
| 子类别： | Microwave Mixer Diodes | 表面贴装： | YES |
MA4E2099-1284W 数据手册
通过下载MA4E2099-1284W数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载High Barrier Silicon Schottky Diodes:
Bridge Octoquad
V 2.00
Features
ODS-1284 Outline (Topview)
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Designed for High Dynamic Range Applications
Low Parasitic Capitance and Inductance
Low Parasitic Resistance
Recommended for DC-12GHz
Uniform Electrical Characteristics with Each Junction
Rugged HMIC Construction with Polyimide Scratch
Protection
Description
The MA4E2099-1284 Bridge Octoquad is offered for high
dynamic range applications. This device is constructed with
Silicon High Barrier Schottky Diodes fabricated with the
patented Heterolithic Microwave Integrated Circuit (HMIC)
process to ensure electrical characteristics uniformity for each
junction. HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass dielectric,
which acts as the low dispersion, low loss, microstrip
transmission medium. The combination of silicon and glass
allows HMIC devices to have excellent loss and power
dissipation characteristics in a low profile, reliable device.
Applications
Millimeters
Inches
The devices can be used in higher power mixer, detector, and
limiter circuits through 12 GHz.
Dim
A
Min.
Max.
Min.
Max.
0.0285
0.0285
0.0040
0.0035
0.0165
0.0297
0.725
0.755
B
0.0297
0.0060
0.0043
0.0173
0.725
0.102
0.090
0.420
0.755
0.153
0.110
0.440
C
Absolute Maximum Ratings1
@ +25 °C
D Sq.
E
Parameter
Value
-55 °C to +150 °C
-55 °C to +150 °C
20 mA
Operating Temperature
Storage Temperature
Forward Current
Equivalent Circuit
2
1
Reverse Voltage
l -9 V l
RF C.W. Incident Power
RF & DC Dissipated Power
+ 25 dBm
100 mW
4
3
1. Exceeding any of these values may result in permanent
damage
1
High Barrier Silicon Schottky Diodes: Bridge Octoquad
MA4E2099-1284
V 2.00
Electrical Specifications @ 25 °C
(Measured at Adjacent Ports: 1-2, 2-3, 3-4, 4-1)
Part
Number
Vf @ 1 mA Vf @ 10 mA
Ct @ 0V
(pF)
Rt Slope Resistance
Vb @10 mA
( V )
( V )
( Vf1 - Vf2 ) /
(10.5 mA-9.5 mA )
( W )
(V )
Min Max Min
Typ
Min
Max
Max
MA4E2099-1284
1.08
1.24 1.32
1.52
0.16
9
16
Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance.
Die Attach
Handling
Die attach for these devices is made through the use of
conventional gold plated die attach technology. A vacuum
collet or plastic tweezers are recommended for device
placement onto the circuit or ground plane. The device
backside metal consists of approximately 0.3 um Ti-Pt-Au.
This metallization scheme allows for die attach to hard and
soft substrates ( for via grounding ) and Au plated metal
ground planes with 80Au/20Sn and Sn63/Pb37 solders. The
maximum time-temperature profile is 300 °C for 5 sec.
Attachment of die to circuit medium with electrically
conductive silver epoxies is also acceptable.
All semiconductor chips should be handled with care to avoid
damage or contamination from perspiration and skin oils. The
use of plastic tipped tweezers or vacuum pickups is strongly
recommended for individual components. The top surface of
the die has a protective polyimide coating to minimize damage.
Bulk handling should insure that abrasion and mechanical
shock are minimized.
The rugged construction of these HMIC devices allows the use
of standard handling and die attach techniques. It is important
to note however that industry standard electrostatic discharge
(ESD) control is required at all times, due to the sensitive
nature of Schottky devices having a Class 0 rating.
Die Bonding
Wire and ribbon bonding from the topside bond pads to the
circuit can be accomplished with 1 mil dia. gold wire or ¼
x 3 mil sq. gold ribbon. Ball bonding, wedge bonding, or
thermo-compression bonding are all acceptable. The
topside of the die is protected with a durable polymer for
impact and scratch protection.
2
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
High Barrier Silicon Schottky Diodes: Bridge Octoquad
MA4E2099-1284
V 2.00
MA4E2099-1284 High Barrier SPICE PARAMETERS (per Diode)
Is
(nA)
5.7 E-2
Rs
( W )
6
N
Cj0
( pF )
2.4 E-1
M
Ik
(mA)
4
Vj
(V)
8.0 E-2
FC
BV
(V)
5.0
IBV
(mA)
1.0 E-2
1.20
0.5
0.5
Ordering Information
Part Number
Package
MA4E2099-1284W
Wafer on Frame
Die in Carrier
Tape/Reel
MA4E2099-1284
MA4E2099-1284T
3
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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