MA4E2160 [TE]
GaAs Flip Chip Schottky Barrier Diodes; 砷化镓倒装芯片肖特基势垒二极管
| 型号： | MA4E2160 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | GaAs Flip Chip Schottky Barrier Diodes |
| 文件： | 总7页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Features
•
•
•
•
•
•
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
MA4E1317
Description and Applications
MA4E1318
M/A-COM's MA4E1317 single, MA4E1318 anti-
parallel pair, MA4E1319-1 reverse tee,
MA4E1319-2 series tee and MA4E2160 uncon-
nected anti-parallel pair are gallium arsenide flip
chip Schottky barrier diodes. These devices are
fabricated on OMCVD epitaxial wafers using a
process designed for high device uniformity and
extremely low parasitics. The diodes are fully
passivated with silicon nitride and have an addi-
tional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling.
The flip chip configuration is suitable for pick
and place insertion. The high cutoff frequency
of these diodes allows use through millimeter
wave frequencies. Typical applications include
single and double balanced mixers in PCN
transceivers and radios, police radar detectors,
and automotive radar detectors. The devices
can be used through 80 GHz.
MA4E1319-1
The MA4E1318 anti-parallel pair is designed for
use in sub harmonically pumped mixers. Close
matching of the diode characteristics results in
high LO suppression at the RF input.
MA4E1319-2
MA4E2160
1
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Electrical Specifications @ + 25 °C
Parameters and Test Conditions
MA4E1317
Typ.
MA4E1318
Symbol
Units
Min.
.030
Max.
.060
Min.
Typ.
.0203
.0453
.005
4
Max.
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz1
Junction Capacitance Difference
Series Resistance at +10mA2
Forward Voltage at +1mA
Cj
Ct
pF
pF
.020
.045
.0303
.0603
.010
7
DCj
Rs
pF
Ohms
Volts
Volts
Volts
dB
4
7
Vf1
DVf
Vbr
NF
.60
4.5
.70
.80
.60
.70
.80
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
SSB Noise Figure
.005
.010
7
6.54
6.54
Parameters and Test Conditions
MA4E1319-1 or -2
MA4E2160
Typ.
.0203
.0453
.005
4
Symbol
Units
Min.
Typ.
.0203
.0453
.005
4
Max.
Min.
Max.
Junction Capacitance at 0V at 1 MHz
Total Capacitance at 0V at 1 MHz1
Junction Capacitance Difference
Series Resistance at +10mA2
Forward Voltage at +1mA
Cj
Ct
pF
pF
.0303
.0603
.010
7
.0303
.0603
.010
7
DCj
Rs
pF
Ohms
Volts
Volts
Volts
dB
Vf1
DVf
Vbr
NF
.60
4.5
.70
.80
.60
4.5
.70
.80
Forward Voltage Difference at 1mA
Reverse Breakdown Voltage at -10uA
SSB Noise Figure
.005
7
.010
.005
7
.010
6.54
6.54
Notes:
1. Total capacitance is equivalent to the sum of junction capacitance Cj and parasitic capacitance Cp.
2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms.
3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode.
4. Measured at an LO frequency of 9.375 GHz, with an IF frequency of 300 MHz. LO drive level is +6 dBM for a single Schottky junc-
tion. The IF noise figure contribution (1.5 dB) is included.
2
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Forward Current vs Temperature
100.00
10.00
1.00
25°C
+125°C
- 50°C
0.10
0.01
0.00
0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00
Forward Voltage (V)
Absolute Maximum Ratings 1
Parameter
Absolute Maximum
Operating Temperature
-65 °C to +125 °C
Storage Temperature
Incident LO Power
-65 °C to +150 °C
+20 dBm
Incident RF Power
+20 dBm .
+235°C for 10 seconds
Class 0
Mounting Temperature
2
Electrostatic Discharge ( ESD ) Classification
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Mounting Techniques
These chips were designed to be inserted onto hard or soft substrates with the junction side down. They can be
mounted with conductive epoxy or with a low temperature solder preform. The die can also be assembled with
the junction side up, and wire or ribbon bonds made to the pads.
Solder Die Attach:
Solder which does not scavenge gold, such as Indalloy # 2, is recommended. Sn-Pb based solders are not rec-
ommended due to solder embrittlement. Do not expose die to a temperature greater than 235°C, or greater than
200°C for longer than 10 seconds. No more than three seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Assembly can be preheated to 125 - 150°C. Use a minimum amount of epoxy. Cure epoxy as per manufac-
turer’s schedule. For extended cure times, temperatures should be kept below 200°C.
Handling Procedures
The following precautions should be observed to avoid damaging these chips:
Cleanliness:
The chips should be handled in a clean environment.
Do not attempt to clean die after installation.
Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static
electricity. Proper ESD techniques should be used when handling these devices.
General Handling: The protective polymer coating on the active areas of these die provides scratch
protection, particularly for the metal air bridge which contacts the anode. Die can
be handled with tweezers or vacuum pickups and are suitable for use with
automatic pick-and-place equipment.
4
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
• North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Flip Chip Outline Drawings
B
F
E
MA4E1317
Case Style 1278
A
C
G
D
MILLIMETERS
INCHES
MIN.
DIM.
H
MIN.
MAX.
MAX.
A
B
C
D
E
F
0.013
0.014
0.027
0.009
0.008
0.017
0.006
0.007
0.0085
0.330
0.660
0.203
0.177
0.406
0.101
0.152
0.190
0.335
0.685
0.228
0.203
0.430
0.152
0.177
0.216
0.026
0.008
0.007
0.016
0.004
0.006
0.0075
G
H
SQ
TYP
G
F
TYP
MA4E1318
E TYP
Case Style 1197
B
D
A
TYP
MILLIMETERS
INCHES
MIN.
DIM.
C
MIN.
MAX.
MAX.
A
B
C
D
E
F
.025
.027
.015
.008
.020
.0085
.005
.006
.64
.32
.15
.45
.190
.08
.10
.69
.37
.20
.50
.216
.13
.15
.012
.006
.018
.0075
.003
.004
G
ALIGNMENT INDICATOR (2 PLCS)
5
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Flip Chip Outline Drawings
F
TYP
SQ.
TYP
G
MA4E1319-1
Case Style 1199
E
TYP
B
D
MILLIMETERS
INCHES
MIN.
DIM.
A
MIN.
MAX.
MAX.
A
B
C
D
E
F
.027
.029
.020
.0085
.015
.005
.005
.006
.68
.45
.190
.33
.08
.08
.10
.73
.50
.216
.38
.13
.13
.15
C
.018
.0075
.013
.003
.003
.004
G
ALIGNMENT INDICATOR (3 PLCS)
6
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
Flip Chip Outline Drawings
7
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
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