MA4E2501L- [TE]

SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes; SURMOUNTTM低壁垒0201足迹硅肖特基二极管


型号：	MA4E2501L-
厂家：	TE CONNECTIVITY
描述：	SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes SURMOUNTTM低壁垒0201足迹硅肖特基二极管肖特基二极管
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MA4E2501-1290 Series

SURMOUNT^TMLow Barrier

0201 Footprint Silicon Schottky Diodes

Rev. V1

Features

•

Extremely Low Parasitic Capitance and Inductance

Extremely Small 0201 (600x300um) Footprint

Surface Mountable in Microwave Circuits , No Wirebonds

Required

•

Rugged HMIC Construction with Polyimide Scratch Protection

Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300°C, 16 hours)

Lower Susceptibility to ESD Damage

•

Description

The MA4E2501L-1290 SurMount™ Diodes are Silicon Low

Barrier Schottky Devices fabricated with the patented

Heterolithic Microwave Integrated Circuit (HMIC) process.

HMIC circuits consist of Silicon pedestals which form diodes or

via conductors embedded in a glass dielectric, which acts as the

low dispersion, microstrip transmission medium. The

combination of silicon and glass allows HMIC devices to have

excellent loss and power dissipation characteristics in a low

profile, reliable device.

The Surmount Schottky devices are excellent choices for circuits

requiring the small parasitics of a beam lead device coupled with

the superior mechanical performance of a chip. The SurMount

structure employs very low resistance silicon vias to connect the

Schottky contacts to the metalized mounting pads on the bottom

surface of the chip. These devices are reliable, repeatable, and a

lower cost performance solution to conventional devices. They

have lower susceptibility to electrostatic discharge than

conventional beam lead Schottky diodes.

Cathode

Anode

Case Style 1290

dim.

The multi-layer metalization employed in the fabrication of the

Surmount Schottky junctions includes a platinum diffusion

barrier, which permits all devices to be subjected to a 16-hour

non-operating stabilization bake at 300°C.

min. max. min. max.

0.023 0.025 0.575 0.625

0.011 0.013 0.275 0.325

0.004 0.008 0.102 0.203

0.006 0.008 0.150 0.200

0.007 0.009 0.175 0.225

0.006 0.008 0.150 0.200

0.009 0.011 0.220 0.270

The extremely small “ 0201 ” outline allows for Surface Mount

placement and multi-functional polarity orientations.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology

Solutions is considering for development. Performance is based on target specifications,

simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications

are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be

available. Commitment to produce in volume is not guaranteed.

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

MA4E2501-1290 Series

SURMOUNT^TMLow Barrier

0201 Footprint Silicon Schottky Diodes

Rev. V1

Elecrtrical Specifications @ 25°C

Model

Type

Recommended

Vf @ 1 mA Vb @ 10 uA Ct @ 0V

Rt Slope Resistance

Number

Frequency

Range

( mV )

( V )

( pF )

( Vf1–Vf2 )/(10.5mA – 9.5mA )

( Ω )

MA4E2501L-

1290

Low

DC – 18 GHz

330 Max

300 Typ

3 Min

5 Typ

0.12 Max

0.10 Typ

10 Typical

14 Max

Barrier

Rt is the dynamic slope resistance where Rt = Rs + Rj ,

where Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic

Resistance.

Applications

Absolute Maximum

The MA4E2501L-1290 SurMount Low Barrier Schottky

diodes are recommended for use in microwave circuits

through Ku band frequencies for lower power applications

such as mixers, sub-harmonic mixers, detectors and limiters.

The HMIC construction facilitates the direct replacement of

more fragile beam lead diodes with the corresponding

Surmount diode, which can be connected to a hard or soft

substrate circuit with solder. C

Parameter

Value

Operating Temperature

Storage Temperature

Forward Current

Reverse Voltage

RF C.W. Incident Power

-40° C to + 150° C

20 mA

+ 20 dBm

RF & DC Dissipated Power

Exceeding any of these values may result in permanent damage

50 mW

Handling

Die Bonding

All semiconductor chips should be handled with care to

avoid damage or contamination from perspiration and skin

oils. The use of plastic tipped tweezers or vacuum pickups

is strongly recommended for individual components. The

top surface of the die has a protective polyimide coating to

minimize damage.

For Hard substrates, we recommend utilizing a vacuum tip

and force of 60 to 100 grams applied uniformly to the top

surface of the device, using a hot gas bonder with equal heat

applied across the bottom mounting pads of the device.

When soldering to soft substrates, it is recommended to use a

lead-tin interface at the circuit board mounting pads. Position

the die so that its mounting pads are aligned with the circuit

board mounting pads. Reflow the solder paste by applying

Equal heat to the circuit at both die-mounting pads. The

solder joint must Not be made one at a time, creating un-

equal heat flow and thermal stress. Solder reflow should Not

be performed by causing heat to flow through the top surface

of the die. Since the HMIC glass is transparent, the edges of

the mounting pads can be visually inspected through the die

after die attach is completed.

The rugged construction of these SurMount devices allows

the use of standard handling and die attach techniques. It is

important to note that industry standard electrostatic

discharge (ESD) control is required at all times, due to the

sensitive nature of Schottky junctions.

Bulk handling should insure that abrasion and mechanical

shock are minimized.

Die Bonding

Die attach for these devices is made simple through the use

of surface mount die attach technology. Mounting pads are

conveniently located on the bottom surface of these devices,

and are opposite the active junction. The devices are well

suited for high temperature solder attachment onto hard

substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable

for usage. Die attach with Electrically Conductive Silver

Epoxy is Not Recommended.