MA4E2502H [TE]
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes; SURMOUNTTM低，中，高垒硅肖特基二极管
| 型号： | MA4E2502H |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes |
| 文件： | 总4页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SURMOUNTTM Low, Medium and High
Barrier Silicon Schottky Diodes
MA4E2502 Series
V5
The MA4E2502 Family of SurMount Schottky diodes
are recommended for use in microwave circuits
through Ku band frequencies for lower power
applications such as mixers, sub-harmonic mixers,
detectors and limiters. The HMIC construction
facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount
diode, which can be connected to a hard or soft
substrate circuit with solder.
Features
·
·
·
·
Extremely Low Parasitic Capitance and
Inductance
Surface Mountable in Microwave Circuits, No
Wirebonds Required
Rugged HMIC Construction with Polyimide
Scratch Protection
Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C,
16 hours)
·
Lower Susceptibility to ESD Damage
Description and Applications
Case Style 1246
The MA4E2502 SurMountTM Series Diodes are
Silicon Low, Medium, and High Barrier Schottky
Devices fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process. HMIC
circuits consist of Silicon pedestals which form
diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion,
microstrip transmission medium. The combination of
silicon and glass allows HMIC devices to have
excellent loss and power dissipation characteristics
in a low profile, reliable device.
A
B
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
C
D
E
D
Inches
Millimeters
Dim
Min.
Max.
Min.
Max.
A
0.0445
0.0465
1.130
1.180
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
B
C
0.0169
0.0040
0.0128
0.0128
0.0189
0.0080
0.0148
0.0148
0.430
0.102
0.325
0.325
0.480
0.203
0.375
0.375
all devices to be subjected to
a
16-hour
D Sq.
E
non-operating stabilization bake at 300 °C.
The “ 0502 ” outline allows for Surface Mount
placement and multi-functional polarity orientations.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low, Medium and High
Barrier Silicon Schottky Diodes
MA4E2502 Series
V5
Electrical Specifications @ 25 °C
Model
Number
Type
Recommended
Frequency Range
Vf @ 1 mA
( mV )
Vb @ 10 uA
( V )
Ct @ 0V
( pF )
Rt Slope Resistance
( Vf1 - Vf2 )/(10.5mA-9.5mA )
( W )
MA4E2502L
Low
Barrier
DC - 18 GHz
330 Max
300 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
16 Typ
20 Max
MA4E2502M
MA4E2502H
Medium
Barrier
DC - 18 GHz
DC - 18 GHz
470 Max
420 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
12 Typ
18 Max
High
Barrier
700 Max
650 Typ
3 Min
5 Typ
0.12 Max
0.10 Typ
11 Typ
15 Max
Rt is the dynamic slope resistance where
Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
Die Bonding
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
high temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37 solders are
acceptable for usage. Die attach with Electrically
Conductive Silver Epoxy is Not Recommended.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
Bulk handling should insure that abrasion and
mechanical shock are minimized.
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted) 1
Parameter
Absolute Maximum
-40 °C to +125 °C
-40 °C to +150 °C
+175 °C
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
20 mA
Reverse Voltage
5 V
RF C.W. Incident Power
RF & DC Dissipated Power
+ 20 dBm
50 mW
1. Operation of this device above any one of these parameters
may cause permanent damage.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low, Medium and High
Barrier Silicon Schottky Diodes
MA4E2502 Series
V5
MA4E2502L Low Barrier SPICE PARAMETERS
Is
(nA)
Rs
N
Cj0
( pF )
M
Ik
Cjpar
Vj
FC
BV
(V)
IBV
(mA)
(pF)
(V)
(mA)
( W )
26
12.8
1.20
1.0 E-2
0.5
14
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502M Medium Barrier SPICE PARAMETERS
Is
(nA)
Rs
N
Cj0
( pF )
M
Ik
Cjpar
Vj
FC
BV
(V)
IBV
(mA)
(pF)
(V)
(mA)
( W )
5 E-1
9.6
1.20
1.0 E-02
0.5
10
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2502H High Barrier SPICE PARAMETERS
Is
(nA)
Rs
N
Cj0
( pF )
M
Ik
Cjpar
Vj
FC
BV
(V)
IBV
(mA)
(pF)
(V)
(mA)
( W )
5.7 E-1
6.5
1.20
1.0 E-02
0.5
4
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low, Medium and High
Barrier Silicon Schottky Diodes
MA4E2502 Series
V5
Ordering Information
Part Number
Package
MA4E2502L-1246W
Wafer on Frame
MA4E2502L-1246
MA4E2502L-1246T
MA4E2502M-1246W
MA4E2502M-1246
MA4E2502M-1246T
MA4E2502H-1246W
MA4E2502H-1246
MA4E2502H-1246T
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
Wafer on Frame
Die in Carrier
Tape/Reel
MA4E2502 Diode Schematic
Ct
Ls
Rs
Rj
Schematic Values
Model Number
Ls
Rs
Rj
Ct
(nH)
(pF)
( W )
( W )
MA4E2502L
MA4E2502M
MA4E2502H
0.8
0.8
0.8
12.8
9.6
26 / Idc (mA)
0.10
0.10
0.10
26 / Idc (mA)
26 / Idc (mA)
6.5
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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